Integrated circuit package system including stacked die

Abstract
An integrated circuit package system is provided including providing a wafer with bond pads formed on the wafer. A solder bump is deposited on one or more bond pads. The bond pads and the solder bump are embedded within a mold compound formed on the wafer. A groove is formed in the mold compound to expose a portion of the solder bump. The wafer is singulated into individual die structures at the groove.
Description

The present application contains subject matter related to co-pending U.S. application Ser. No. 11/326,211 filed Jan. 4, 2006. The related application is assigned to STATS ChipPAC Ltd. and the subject matter thereof is incorporated herein by reference thereto.


The present application contains subject matter also related to co-pending U.S. application Ser. No. 11/326,206 filed Jan. 4, 2006. The related application is assigned to STATS ChipPAC Ltd. and the subject matter thereof is incorporated herein by reference thereto.


The present application contains subject matter also related to U.S. application Ser. No. 11/306,628 filed Jan. 4, 2006, now U.S. Pat. No. 7,364,945. The related application is assigned to STATS ChipPAC Ltd. and the subject matter thereof is incorporated herein by reference thereto.


TECHNICAL FIELD

The present invention relates generally to integrated circuit package systems, and more particularly to an integrated circuit package system including stacked die.


BACKGROUND ART

In the electronics industry, as products such as cell phones and camcorders become smaller and smaller, increased miniaturization of integrated circuit (IC) packages has become more and more critical. At the same time, higher performance and lower cost have become essential for new products.


Usually, many individual integrated circuit devices are constructed on the same wafer and groups of integrated circuit devices are separated into individual integrated circuit die.


One approach to putting more integrated circuit dies in a single package involves stacking the dies with space between the dies for wire bonding. The space is achieved by means of a thick layer of organic adhesive or in combination with inorganic spacers of material such as silicon (Si), ceramic, or metal. Unfortunately, the stacking adversely affects the performance of the package because of decreased thermal performance due to the inability to remove heat through the organic adhesive and/or inorganic spacers. As the number of dies in the stack increases, thermal resistance increases at a faster rate. Further, such stacked dies have a high manufacturing cost.


Generally, semiconductor packages are classified into a variety of types in accordance with their structures. In particular, semiconductor packages are classified into an in-line type and a surface mount type in accordance with their mounting structures. Examples of in-line type semiconductor packages include a dual in-line package (DIP) and a pin grid array (PGA) package. Examples of surface mount type semiconductor packages include quad flat package (QFP) and a ball grid array (BGA) package.


Recently, the use of surface mount type semiconductor packages has increased, as compared to in-line type semiconductor packages, in order to obtain an increased element mounting density of a printed circuit board. A conventional semiconductor package has a size considerably larger than that of the semiconductor chip used. For this reason, this semiconductor package cannot meet the recent demand for a light, thin, simple, miniature structure. As a result, it is hard for the conventional semiconductor package to meet the demand for a highly integrated miniature structure.


Furthermore, the fabrication method used to fabricate the conventional semiconductor package involves a relatively large number of processes. For this reason, a need therefore exists for reducing the costs through use of simplified processes. In view of the ever-increasing need to save costs and improve efficiencies, it is more and more critical that answers be found to these problems.


DISCLOSURE OF THE INVENTION

The present invention provides an integrated circuit package system including providing a wafer with bond pads formed on the wafer. A solder bump is deposited on one or more bond pads. The bond pads and the solder bump are embedded within a mold compound formed on the wafer. A groove is formed in the mold compound to expose a portion of the solder bump. The wafer is singulated into individual die structures at the groove.


Certain embodiments of the invention have other aspects in addition to or in place of those mentioned or obvious from the above. The aspects will become apparent to those skilled in the art from a reading of the following detailed description when taken with reference to the accompanying drawings.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a cross-sectional view of an integrated circuit package system in accordance with an embodiment of the present invention;



FIG. 2 is a cross-sectional view of an integrated circuit package system in accordance with another embodiment of the present invention;



FIG. 3A is a perspective view of a wafer in a bumped step in accordance with an embodiment of the present invention;



FIG. 3B is a cross-sectional view of a wafer in a bumped step as in FIG. 3A;



FIG. 4 is the structure of FIG. 3B in a grinding step in accordance with an embodiment of the present invention;



FIG. 5 is the structure of FIG. 4 in a sawing step in accordance with an embodiment of the present invention; and



FIG. 6 is a flow chart of an integrated circuit package system in accordance with an embodiment of the present invention.





BEST MODE FOR CARRYING OUT THE INVENTION

In the following description, numerous specific details are given to provide a thorough understanding of the invention. However, it will be apparent that the invention may be practiced without these specific details. In order to avoid obscuring the present invention, some well-known circuits, system configurations, and process steps are not disclosed in detail.


Likewise, the drawings showing embodiments of the device are semi-diagrammatic and not to scale and, particularly, some of the dimensions are for the clarity of presentation and are shown greatly exaggerated in the drawing FIGs. Generally, the device can be operated in any orientation. The same numbers are used in all the drawing FIGs. to relate to the same elements.


The term “horizontal” as used herein is defined as a plane parallel to the conventional plane or surface of the wafer, regardless of its orientation. The term “vertical” refers to a direction perpendicular to the horizontal as just defined. Terms, such as “on”, “above”, “below”, “bottom”, “top”, “side” (as in “sidewall”), “higher”, “lower”, “upper”, “over”, and “under”, are defined with respect to the horizontal plane.


The term “processing” as used herein includes deposition of material or photoresist, patterning, exposure, development, etching, cleaning, and/or removal of the material or photoresist as required in forming a described structure.


Referring now to FIG. 1, therein is shown a cross-sectional view of an integrated circuit package system 100 in accordance with an embodiment of the present invention. A printed circuit board 102 (PCB) has a first surface 104 and a second surface 106 opposite to the first surface 104. Solder balls 108 are disposed against the first surface 104. A first semiconductor structure 110 is coupled to the second surface 106 of the printed circuit board 102. A second semiconductor structure 112 is stacked on top of the first semiconductor structure 110.


The first semiconductor structure 110 includes a die 114 having a mold compound 116. The die 114 has bond pads 118 electrically connected to the integrated circuits (not shown) within the die 114. The mold compound 116 includes solder bumps 120 bonded to the bond pads 118, and a recess 121 formed into the edges of the mold compound 116.


The recess 121 partially expose the solder bumps 120. Electrical connectors, including wire bonds 122 and bond wires 124, couple the solder bumps 120 to the printed circuit board 102. The height of the recess 121 is tall enough to provide a clearance for the electrical connectors disposed underneath the second semiconductor structure 112. The wire bonds and a portion of the bond wires are located within the recess 121. The combined height of the mold compound 116 and the die 114 is greater than the height of the electrical connectors.


The second semiconductor structure 112 includes a die 126 having a mold compound 128. A bottom surface of the die 126 is coupled to a top surface of the mold compound 116 of the first semiconductor structure 110. The die 126 has bond pads 130 electrically connected to the integrated circuits (not shown) within the die 126. The mold compound 128 includes solder bumps 132 bonded to the bond pads 130, and a recess 133 formed into the edges of the mold compound 128. The recess 133 partially exposes the solder bumps 132. Electrical connectors, including wire bonds 134 and bond wires 136, couple the solder bumps 132 to the printed circuit board 102.


The recesses 121 and 133 can be on two sides of the first and second semiconductor structures 110 and 112 or on all four sides for quad-packages. The first and second semiconductor structures 110 and 112 can be subsequently encapsulated in an encapsulant 138 to protect the bond wires 124 and 136 and to form the integrated circuit package system 100 with a low profile.


Referring now to FIG. 2, therein is shown a cross-sectional view of an integrated circuit package system 200 in accordance with another embodiment of the present invention. The integrated circuit package system 200 includes a similar structure to the integrated circuit package system 100. In addition, a layer of film laminate 202 is applied between the top surface of the mold compound 116 of the first semiconductor structure 110 and the bottom surface of the die 126 of the second semiconductor structure 112. The layer of film laminate 202 provides insulation between the first and second semiconductor structures 110 and 112, and may act as an adhesive material.


The recesses 121 and 133 can be on two sides of the first and second semiconductor structures 110 and 112 or on all four sides for quad-packages. The first and second semiconductor structures 110 and 112 can be subsequently encapsulated to protect the bond wires 124 and 136 and to form the integrated circuit package system 200 with a low profile.


Referring now to FIG. 3A, therein is shown a perspective view of a wafer 302 in a bumped and mold step in accordance with an embodiment of the present invention. A mold compound 304 is applied on the wafer 302. The mold compound 304 may be spun-on, poured within a rim barrier, injected in a mold, or otherwise applied.


Referring now to FIG. 3B, therein is shown a cross-sectional view of the wafer 302 in a bumped and mold step as in FIG. 3A. Bond pads 306 are formed on the wafer 302 in connection with the integrated circuits (not shown) in the wafer 302. Solder bumps 308 are then deposited on the bond pads 306 followed by the deposition of the mold compound 304.


Referring now to FIG. 4, therein is shown the structure of FIG. 3B in a grinding step in accordance with an embodiment of the present invention. The bottom, exposed surface of the wafer 302 is planarized to a specified surface flatness and thickness. In accordance with one embodiment, the surface is planarized by grinding using a grinding wheel 402.


The planarization permits the dies 124 and 126 to be extremely thin but partially supported for strength by the mold compounds 116 and 128 so they may be safely handled. This extreme thinness also helps reduce the package profile. Furthermore, the planarization allows for better accuracy for the following sawing step.


Referring now to FIG. 5, therein is shown the structure of FIG. 4 in a sawing step in accordance with an embodiment of the present invention. A portion of the wafer 302 and the mold compound 304 are cut. For example, a thick blade 500 may be used for creating a groove 502 of width “W” on a portion of the surface of the mold compound 304 such that it exposes a portion of the solder bumps 308. A dicing saw may be used for cutting the wafer 302 and the mold compound 304 to create a cut 504 of width “w” between each die structure to yield an integrated circuit package 506.


The groove 502 reduces the thickness of the mold compound 304, which must be sawn, while the mold compound 304 helps prevent defects during the dicing operation.


Referring now to FIG. 6, therein is shown a flow chart of an integrated circuit package system 600 for manufacturing the system 100 in accordance with an embodiment of the present invention. The system 600 includes providing a wafer with bond pads formed on the wafer in a block 602; depositing solder bumps on one or more bond pads in a block 604; embedding the bond pads and the solder bumps within a mold compound on the wafer in a block 606; forming a groove in the mold compound to expose a portion of the solder bumps in a block 608; and singulating the wafer at the groove into individual die structures in a block 610.


In greater detail, an integrated circuit package system including stacked die, according to an embodiment of the present invention, is performed as follows:

    • 1. providing the wafer 302. (FIG. 3A)
    • 2. applying the layer of mold compound 304 on the wafer 302. (FIG. 3B)
    • 3. forming bond pads 306 on the wafer 302 in connection with the integrated circuits in the wafer 302. (FIG. 3B)
    • 4. depositing solder bumps 308 on the bond pads 306 (FIG. 3B)
    • 5. depositing the mold compound 304. (FIG. 3B)
    • 6. planarizing the bottom, exposed surface of the wafer 302 to a specified surface flatness and thickness. (FIG. 4)
    • 7. forming the groove 502 of width “W” on a portion of the surface of the layer of mold compound 304 such that it exposes a portion of the solder bump 308. (FIG. 5)
    • 8. cutting through the wafer 302 and the remaining layer of the mold compound 304 to create the cut 504 of width “w” between each die structure to yield the integrated circuit package 506. (FIG. 5)


It has been discovered that the present invention thus has numerous aspects.


An aspect of the present invention is that it valuably supports and services the historical trend of reducing costs, simplifying systems, and increasing performance.


These and other valuable aspects of the present invention consequently further the state of the technology to at least the next level.


The resulting processes and configurations are straightforward, cost-effective, uncomplicated, highly versatile and effective, can be implemented by adapting known technologies, and are thus readily suited for efficiently and economically manufacturing large die IC packaged devices.


While the invention has been described in conjunction with a specific best mode, it is to be understood that many alternatives, modifications, and variations will be apparent to those skilled in the art in light of the aforegoing description. Accordingly, it is intended to embrace all such alternatives, modifications, and variations that fall within the scope of the included claims. All matters hithertofore set forth herein or shown in the accompanying drawings are to be interpreted in an illustrative and non-limiting sense.

Claims
  • 1. An integrated circuit package system comprising: a die with bond pads formed on the die and a planarized bottom exposed surface;a solder bump deposited on one or more bond pads;a mold compound formed on the die, the mold compound embedding the bond pads and the solder bump; anda recess formed into the edges of the mold compound to expose a portion of the solder bump.
  • 2. The system as claimed in claim 1 wherein the exposed portion of the solder bump further comprises: a top portion of the solder bump.
  • 3. The system as claimed in claim 1 wherein the recess is above the bond pads.
  • 4. The system as claimed in claim 1 further comprising: a wire bond attached to the exposed portion of the solder bump in the recess.
  • 5. An integrated circuit package system comprising: a die with bond pads formed on the die;a solder bump deposited on one or more bond pads;a mold compound formed on the die, the mold compound embedding the bond pads and the solder bump;a recess formed into the edges of the mold compound to expose a portion of the solder bump;a printed circuit board connected to a bottom exposed surface of the die; andelectrical connectors connected to the exposed portion of the solder bump and the printed circuit board, wherein a combined height of the mold compound and the die is at least greater than a height of the electrical connectors.
  • 6. The system as claimed in claim 5 wherein the electrical connectors further comprises: wire bonds attached to the exposed portion of the solder bump; andbond wires electrically coupled to the wire bonds and the printed circuit board.
  • 7. The system as claimed in claim 5 further comprising: a semiconductor structure mounted on the mold compound.
  • 8. The system as claimed in claim 7 further comprising: a layer of laminate film deposited between the semiconductor structure and the mold compound.
  • 9. The system as claimed in claim 5 further comprising: an encapsulant encapsulating the electrical connectors, the die, and the mold compound.
CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a Divisional of co-pending U.S. application Ser. No. 11/306,627 filed Jan. 4, 2006, and the subject matter thereof is hereby incorporated herein by reference thereto.

US Referenced Citations (228)
Number Name Date Kind
4524121 Gleim et al. Jun 1985 A
4697203 Sakai et al. Sep 1987 A
4764804 Sahara et al. Aug 1988 A
4894707 Yamawaki et al. Jan 1990 A
5186383 Melton et al. Feb 1993 A
5214307 Davis May 1993 A
5214308 Nishiguchi et al. May 1993 A
5222014 Lin Jun 1993 A
5229960 De Givry Jul 1993 A
5269453 Melton et al. Dec 1993 A
5323060 Fogal et al. Jun 1994 A
5340771 Rostoker Aug 1994 A
5373189 Massit et al. Dec 1994 A
5436203 Lin Jul 1995 A
5444296 Kaul et al. Aug 1995 A
5495398 Takiar et al. Feb 1996 A
5550711 Burns et al. Aug 1996 A
5579207 Hayden et al. Nov 1996 A
5607227 Yasumoto et al. Mar 1997 A
5650667 Liou Jul 1997 A
5652185 Lee Jul 1997 A
5734199 Kawakita et al. Mar 1998 A
5744863 Culnane et al. Apr 1998 A
5748452 Londa May 1998 A
5760478 Bozso et al. Jun 1998 A
5811351 Kawakita et al. Sep 1998 A
5824569 Brooks et al. Oct 1998 A
5828128 Higashiguchi et al. Oct 1998 A
5854507 Miremadi et al. Dec 1998 A
5898219 Barrow Apr 1999 A
5899705 Akram May 1999 A
5903049 Mori May 1999 A
5963430 Londa Oct 1999 A
5977640 Bertin et al. Nov 1999 A
5977641 Takahashi et al. Nov 1999 A
5982633 Jeansonne Nov 1999 A
5994166 Akram et al. Nov 1999 A
6025648 Takahashi et al. Feb 2000 A
RE36613 Ball Mar 2000 E
6034875 Heim et al. Mar 2000 A
6075289 Distefano Jun 2000 A
6083775 Huang et al. Jul 2000 A
6083811 Riding et al. Jul 2000 A
6101100 Londa Aug 2000 A
6107164 Ohuchi Aug 2000 A
6118176 Tao et al. Sep 2000 A
6121682 Kim Sep 2000 A
6130448 Bauer et al. Oct 2000 A
6143588 Glenn Nov 2000 A
6144507 Hashimoto Nov 2000 A
6157080 Tamaki et al. Dec 2000 A
6165815 Ball Dec 2000 A
6201266 Ohuchi et al. Mar 2001 B1
6201302 Tzu Mar 2001 B1
6204562 Ho et al. Mar 2001 B1
6225699 Ference et al. May 2001 B1
6238949 Nguyen et al. May 2001 B1
6242932 Hembree Jun 2001 B1
6246123 Landers, Jr. et al. Jun 2001 B1
6265766 Moden Jul 2001 B1
6266197 Glenn et al. Jul 2001 B1
6274930 Vaiyapuri et al. Aug 2001 B1
6291263 Huang Sep 2001 B1
6294406 Bertin et al. Sep 2001 B1
6297131 Yamada et al. Oct 2001 B1
6316735 Higashiguchi Nov 2001 B1
6316838 Ozawa et al. Nov 2001 B1
6333552 Kakimoto et al. Dec 2001 B1
6333562 Lin Dec 2001 B1
6340846 LoBianco et al. Jan 2002 B1
6353257 Huang Mar 2002 B1
6358773 Lin et al. Mar 2002 B1
6369454 Chung Apr 2002 B1
6372551 Huang Apr 2002 B1
6376904 Haba et al. Apr 2002 B1
6384472 Huang May 2002 B1
6388313 Lee et al. May 2002 B1
6396116 Kelly et al. May 2002 B1
6400007 Wu et al. Jun 2002 B1
6407381 Glenn et al. Jun 2002 B1
6407456 Ball Jun 2002 B1
6410861 Huang et al. Jun 2002 B1
6413798 Asada Jul 2002 B2
6414381 Takeda Jul 2002 B1
6420204 Glenn Jul 2002 B2
6420244 Lee Jul 2002 B2
6424050 Komiyama Jul 2002 B1
6441496 Chen et al. Aug 2002 B1
6445064 Ishii et al. Sep 2002 B1
6455353 Lin Sep 2002 B2
6462421 Hsu et al. Oct 2002 B1
6472732 Terui Oct 2002 B1
6489676 Taniguchi et al. Dec 2002 B2
6492726 Quek et al. Dec 2002 B1
6501165 Farnworth et al. Dec 2002 B1
6503780 Glenn et al. Jan 2003 B1
6509639 Lin Jan 2003 B1
6512219 Webster et al. Jan 2003 B1
6512303 Moden Jan 2003 B2
6529027 Akram et al. Mar 2003 B1
6534419 Ong Mar 2003 B1
6538319 Terui Mar 2003 B2
6541857 Caletka et al. Apr 2003 B2
6545365 Kondo et al. Apr 2003 B2
6545366 Michii et al. Apr 2003 B2
6552423 Song et al. Apr 2003 B2
6555902 Lo et al. Apr 2003 B2
6555917 Heo Apr 2003 B1
6566745 Beyne et al. May 2003 B1
6570249 Liao et al. May 2003 B1
6580169 Sakuyama et al. Jun 2003 B2
6583503 Akram et al. Jun 2003 B2
6590281 Wu et al. Jul 2003 B2
6593647 Ichikawa Jul 2003 B2
6593648 Emoto Jul 2003 B2
6593662 Pu et al. Jul 2003 B1
6599779 Shim et al. Jul 2003 B2
6607937 Corisis Aug 2003 B1
6610563 Waitl et al. Aug 2003 B1
6611063 Ichinose et al. Aug 2003 B1
6613980 McGhee et al. Sep 2003 B1
6617198 Brooks Sep 2003 B2
6621169 Kikuma et al. Sep 2003 B2
6621172 Nakayama et al. Sep 2003 B2
6627864 Glenn et al. Sep 2003 B1
6627979 Park Sep 2003 B2
6642609 Minamio et al. Nov 2003 B1
6649445 Qi et al. Nov 2003 B1
6649448 Tomihara Nov 2003 B2
6650019 Glenn et al. Nov 2003 B2
6667556 Moden Dec 2003 B2
6674156 Bayan et al. Jan 2004 B1
6690089 Uchida Feb 2004 B2
6692993 Li et al. Feb 2004 B2
6693364 Tao et al. Feb 2004 B2
6700178 Chen et al. Mar 2004 B2
6700192 Matsuzawa et al. Mar 2004 B2
6706557 Koopmans Mar 2004 B2
6707140 Nguyen et al. Mar 2004 B1
6713366 Mong et al. Mar 2004 B2
6716670 Chiang Apr 2004 B1
6734539 Degani et al. May 2004 B2
6734552 Combs et al. May 2004 B2
6734569 Appelt et al. May 2004 B2
6737750 Hoffman et al. May 2004 B1
6740980 Hirose May 2004 B2
6746894 Fee et al. Jun 2004 B2
6747361 Ichinose Jun 2004 B2
6762488 Maeda et al. Jul 2004 B2
6777799 Kikuma et al. Aug 2004 B2
6777819 Huang Aug 2004 B2
6784534 Glenn et al. Aug 2004 B1
6787915 Uchida et al. Sep 2004 B2
6787916 Halahan Sep 2004 B2
6791036 Chen et al. Sep 2004 B1
6791076 Webster Sep 2004 B2
6794741 Lin et al. Sep 2004 B1
6794749 Akram Sep 2004 B2
6809405 Ito et al. Oct 2004 B2
6818980 Pedron, Jr. Nov 2004 B1
6828665 Pu et al. Dec 2004 B2
6833612 Kinsman Dec 2004 B2
6835598 Baek et al. Dec 2004 B2
6838761 Karnezos Jan 2005 B2
6847105 Koopmans Jan 2005 B2
6851598 Gebauer et al. Feb 2005 B2
6861288 Shim et al. Mar 2005 B2
6861683 Rissing et al. Mar 2005 B2
6864566 Choi Mar 2005 B2
6881611 Fukasawa et al. Apr 2005 B1
6882057 Hsu Apr 2005 B2
6890798 McMahon May 2005 B2
6900528 Mess et al. May 2005 B2
6900549 Brooks May 2005 B2
6906415 Jiang et al. Jun 2005 B2
6906416 Karnezos Jun 2005 B2
6930378 St. Amand et al. Aug 2005 B1
6930396 Kurita et al. Aug 2005 B2
6933598 Karnezos Aug 2005 B2
6951982 Chye et al. Oct 2005 B2
6972481 Karnezos Dec 2005 B2
7030489 Kang et al. Apr 2006 B2
7034387 Karnezos Apr 2006 B2
7034388 Yang et al. Apr 2006 B2
7045887 Karnezos May 2006 B2
7049691 Karnezos May 2006 B2
7053476 Karnezos May 2006 B2
7053477 Karnezos et al. May 2006 B2
7057269 Karnezos Jun 2006 B2
7061088 Karnezos Jun 2006 B2
7064426 Karnezos Jun 2006 B2
7071568 St. Amand et al. Jul 2006 B1
7081678 Liu Jul 2006 B2
7084500 Swnson et al. Aug 2006 B2
7090482 Tsukahara et al. Aug 2006 B2
7093358 Akram et al. Aug 2006 B2
7101731 Karnezos Sep 2006 B2
7109574 Chiu et al. Sep 2006 B2
7115990 Kinsman Oct 2006 B2
7119427 Kim Oct 2006 B2
7122906 Doan Oct 2006 B2
7176506 Beroz et al. Feb 2007 B2
7218005 Tago May 2007 B2
7221059 Farnworth et al. May 2007 B2
7298045 Fujitani et al. Nov 2007 B2
7335994 Klein et al. Feb 2008 B2
20020024124 Hashimoto Feb 2002 A1
20020096755 Fukui et al. Jul 2002 A1
20020100955 Potter et al. Aug 2002 A1
20020130404 Ushijima et al. Sep 2002 A1
20030008510 Grigg et al. Jan 2003 A1
20030113952 Sambasivam et al. Jun 2003 A1
20030153134 Kawata et al. Aug 2003 A1
20040016939 Akiba et al. Jan 2004 A1
20040061213 Karnezos Apr 2004 A1
20040119153 Karnezos Jun 2004 A1
20040124540 Chen et al. Jul 2004 A1
20040166605 Kuratomi et al. Aug 2004 A1
20040201087 Lee Oct 2004 A1
20040212096 Wang Oct 2004 A1
20050051882 Kwon et al. Mar 2005 A1
20050075053 Jung Apr 2005 A1
20060043556 Su et al. Mar 2006 A1
20060065958 Tsao et al. Mar 2006 A1
20060138631 Tao et al. Jun 2006 A1
20060189033 Kim Aug 2006 A1
20060197209 Choi et al. Sep 2006 A1
20060244157 Carson Nov 2006 A1
Foreign Referenced Citations (9)
Number Date Country
0 430 458 Jun 1991 EP
0 652 630 May 1995 EP
05152505 Jun 1993 JP
2001223326 Aug 2001 JP
2001068614 Jul 2001 KR
2004085348 Oct 2004 KR
9850954 Nov 1998 WO
02084716 Oct 2002 WO
03032370 Apr 2003 WO
Related Publications (1)
Number Date Country
20090014899 A1 Jan 2009 US
Divisions (1)
Number Date Country
Parent 11306627 Jan 2006 US
Child 12235521 US