Claims
- 1. A method of writing to a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying a programming voltage to a first word line coupled to a control gate of the selected memory cell, wherein a gate/source voltage equal to the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying a fraction of the programming voltage to other word lines coupled to control gates of non-selected memory cells not associated with the first word line; applying a ground potential to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell through a diode; and applying the fraction of the programming voltage to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line, wherein the other bit lines are coupled to the second source/drain regions of such non-selected memory cells through diodes.
- 2. The method of claim 1, wherein the programming voltage is approximately 6 V.
- 3. The method of claim 1, wherein the fraction of the programming voltage is approximately ½.
- 4. A method of writing to a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying a programming voltage to a first word line coupled to a control gate of the selected memory cell, wherein a gate/source voltage equal to approximately ⅓ the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying approximately ½ the programming voltage to other word lines coupled to control gates of non-selected memory cells not associated with the first word line; applying a ground potential to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell through a diode; and applying approximately ½ the programming voltage to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line, wherein the other bit lines are coupled to the second source/drain regions of such non-selected memory cells through diodes.
- 5. The method of claim 4, wherein the programming voltage is approximately 6 V.
- 6. A method of writing to a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying a ground potential to a first word line coupled to a control gate of the selected memory cell; applying a fraction of a programming voltage to other word lines coupled to control gates of non-selected memory cells not associated with the first word line, wherein a gate/source voltage equal to the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying the programming voltage to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell through a diode; and applying the fraction of the programming voltage to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line, wherein the other bit lines are coupled to the second source/drain regions of such non-selected memory cells through diodes.
- 7. The method of claim 6, wherein the fraction of the programming voltage is approximately ½.
- 8. The method of claim 6, wherein the programming voltage is approximately 6 V.
- 9. A method of writing to a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying a ground potential to a first word line coupled to a control gate of the selected memory cell; applying approximately ½ a programming voltage to other word lines coupled to control gates of non-selected memory cells not associated with the first word line, wherein a gate/source voltage equal to approximately ⅓ the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying the programming voltage to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell through a diode; and applying approximately ½ the programming voltage to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line.
- 10. The method of claim 9, wherein the programming voltage is approximately 6 V.
- 11. A method of reading a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying a first fraction of a programming voltage to a first word line coupled to a control gate of the selected memory cell, wherein a gate/source voltage equal to the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying a ground potential to other word lines coupled to control gates of non-selected memory cells not associated with the first word line; applying the first fraction of the programming voltage to a first program line coupled to a first source/drain region of the selected memory cell and to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line; and applying a second fraction of the programming voltage to a first bit line coupled to a second source/drain region of the selected memory cell through a diode and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line, wherein the other bit lines are coupled to the second source/drain regions of such non-selected memory cells through diodes.
- 12. The method of claim 11, wherein the first fraction is smaller than the second fraction.
- 13. The method of claim 11, wherein the first fraction is approximately ⅓ and the second fraction is approximately ½.
- 14. The method of claim 11, wherein the programming voltage is approximately 6 V.
- 15. A method of reading a selected ferroelectric memory cell in an array of ferroelectric memory cells, the method comprising:
applying approximately ⅓ a programming voltage to a first word line coupled to a control gate of the selected memory cell, wherein a gate/source voltage equal to approximately ⅓ the programming voltage is sufficient to cause a reversal of polarity of each memory cell; applying a ground potential to other word lines coupled to control gates of non-selected memory cells not associated with the first word line; applying approximately ⅓ the programming voltage to a first program line coupled to a first source/drain region of the selected memory cell and to other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line; and applying approximately ½ the programming voltage to a first bit line coupled to a second source/drain region of the selected memory cell through a diode and to other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line, wherein the other bit lines are coupled to the second source/drain regions of such non-selected memory cells through diodes.
RELATED APPLICATIONS
[0001] This is a divisional application of U.S. patent application Ser. No. 09/652,557 (allowed), filed Aug. 31, 2000, titled “JUNCTION-ISOLATED DEPLETION MODE FERROELECTRIC MEMORY DEVICES, USES AND OPERATION,” which is commonly assigned, the entire contents of which are incorporated herein by reference.
[0002] This application is further related to U.S. patent application Ser. No. 09/653,074 filed Aug. 31, 2000 and titled, “Array Architecture for Depletion Mode Ferroelectric Memory Devices,” which is commonly assigned.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09652557 |
Aug 2000 |
US |
Child |
10339041 |
Jan 2003 |
US |