Claims
- 1. A laser process comprising steps of:
- forming a transparent film covering a semiconductor film over a substrate;
- introducing phosphorus into said semiconductor film through said transparent film by ion doping;
- irradiating said film with a beam of excimer laser pulses in order to activate said phosphorus in said semiconductor film where the laser pulses have a wavelength of 400 nm or shorter;
- wherein an energy density E of each of said laser pulses in units of mJ/cm.sup.2 and the number N of said laser pulses satisfies the relation log.sub.10 N<-0.02(E-350) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 2. The process according to claim 1 wherein said semiconductor film comprises silicon.
- 3. The process according to claim 1 wherein said energy density is within a range from 200 to 300 mJ/cm.sup.2.
- 4. The process according to claim 1 wherein said irradiation is carried out with said substrate at a temperature in a range of room temperature to 500.degree. C.
- 5. A laser process comprising steps of:
- forming a transparent film covering a semiconductor film over a substrate;
- introducing boron into said semiconductor film through said transparent film by ion doping;
- irradiating said film with a beam of excimer laser pulses in order to activate said boron in said semiconductor film where the laser pulses have a wavelength of 400 nm or shorter;
- wherein an energy density E of each of said laser pulses in units of mJ/cm.sup.2 and the number N of said laser pulses satisfies the relation log.sub.10 N<-0.02(E-300) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 6. The process according to claim 5 wherein said semiconductor film comprises silicon.
- 7. The process according to claim 5 wherein said irradiation is carried out at a temperature in a range of room temperature to 500.degree. C.
- 8. The process according to claim 5 wherein said energy density is within a range from 200 to 300 mJ/cm.sup.2.
- 9. A laser process comprising steps of:
- introducing phosphorus into a semiconductor film provided on a transparent substrate by ion doping;
- irradiating said semiconductor film with a beam of excimer laser pulses in order to activate said phosphorus in said semiconductor film where the laser pulses have a wavelength of 400 nm or shorter;
- wherein an energy density E of each of said laser pulses in units of mJ/cm.sup.2 and the number N of said laser pulses satisfies the relation log.sub.10 N<-0.02(E-350) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 10. The process according to claim 9 wherein said semiconductor film comprises silicon.
- 11. The process according to claim 9 wherein said irradiation is carried out with said substrate at a temperature in a range of room temperature to 500.degree. C.
- 12. A laser process comprising steps of:
- introducing boron into a semiconductor film provided on a transparent substrate by ion doping;
- irradiating said semiconductor film with a beam of excimer laser pulses in order to activate said boron in said semiconductor film where the laser pulses have a wavelength of 400 nm or shorter;
- wherein an energy density E of each of said laser pulses in units of mJ/cm.sup.2 and the number N of said laser pulses satisfies the relation log.sub.10 N<-0.02(E-300) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 13. The process according to claim 12 wherein said semiconductor film comprises silicon.
- 14. The process according to claim 12 wherein said irradiation is carried out with said substrate at 500.degree. C. or lower.
- 15. A process of manufacturing a semiconductor device comprising steps of:
- forming a crystalline semiconductor film comprising silicon over a substrate;
- introducing phosphorus into portions of said semiconductor film by ion doping using phosphine gas;
- activating said portions of the semiconductor film doped with the phosphorus by irradiating a beam of excimer laser pulses,
- wherein an energy density E of the laser pulses in units of mJ/cm.sup.2 and a number N of said laser pulses satisfy the relation log.sub.10 N<-0.02(E-350) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 16. The process according to claim 15 wherein said semiconductor film is irradiated with said beam while maintaining said substrate at a temperature in a range of room temperature to 500.degree. C.
- 17. The process according to claim 15 wherein said energy density is within a range from 200 to 300 mJ/cm.sup.2.
- 18. The process according to claim 15 wherein a cross section of said beam has an elongated shape at said semiconductor film.
- 19. A process of manufacturing a semiconductor device comprising steps of:
- forming a crystalline semiconductor film comprising silicon over a substrate;
- introducing boron into portions of said semiconductor film with the boron by irradiating a beam of excimer laser pulses,
- wherein an energy density E of the laser pulses in units of mJ/cm.sup.2 and a number N of said laser pulses satisfy the relation log.sub.10 N<-0.02(E-300) where N is not less than one and not greater than 10 and said energy density E is not less than 200 mJ/cm.sup.2.
- 20. The process according to claim 19 wherein said semiconductor film is irradiated with said beam while maintaining said substrate at a temperature in a range of room temperature to 500.degree. C.
- 21. The process according to claim 19 wherein said energy density is within a range from 200 to 300 mJ/cm.sup.2.
- 22. The process according to claim 19 wherein a cross section of said beam has an elongated shape at said semiconductor film.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-193005 |
Jun 1992 |
JPX |
|
4-252295 |
Aug 1992 |
JPX |
|
Parent Case Info
This application is a Continuation of Ser. No. 08/409,929, filed Mar. 23, 1995 now abandoned; which itself is a continuation of Ser. No. 08/081,696, filed Jun. 25, 1993, now abandoned.
US Referenced Citations (18)
Non-Patent Literature Citations (1)
Entry |
Chrisey et al, ed. Pulsed Laser Deposition of Thin Films, sec. 2.2.2 "Excimer Discharge Design" pp. 27-29; A Wiley-Interscience Publication, John Wiley & Sons, Inc. N.Y., 1994, No Month. |
Continuations (2)
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Number |
Date |
Country |
Parent |
409929 |
Mar 1995 |
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Parent |
81696 |
Jun 1993 |
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