The present invention relates to an amount-of-light (light quantity) adjusting method, an image recording method, and an image recording apparatus (device) for controlling a plurality of exposure heads having independent light sources for outputting light beams and arrayed along an image recording medium, depending on image data, to record an image on the image recording medium.
There is known an image recording apparatus for modulating light beams emitted from a plurality of light sources with image data and guiding the modulated light beams to a photosensitive material, as an apparatus for recording a wiring pattern on photoresist 3 by way of exposure. If the amounts of light of the light beams emitted from the light sources differ from each other, then an image recorded on the photosensitive material suffers irregularities. Therefore, the amounts of light of the light beams from the respective light sources are detected by photodetectors for adjustment.
However, since the photodetectors generally have different sensitivities with respect to wavelengths of light detected thereby, if the light beams emitted from the respective light sources have different wavelengths, then detected values of the amounts of light are also different from each other, failing to make correct adjustment. It has been proposed to detect amounts of light of light beams emitted from light sources while correcting the amounts of light depending on the wavelengths of the light beams (see Japanese Patent Publication No. 7-117447).
Generally, photosensitive materials for recording images thereon have different sensitivities with respect to the wavelengths of light beams applied thereto. Consequently, even if the amounts of light of the light beams are adjusted in view of the wavelength dependency of the photodetectors, there is no guarantee that images free of irregularities will necessarily be recorded. If the light beams have different beam diameters and are focused differently by an optical system, then the recorded image will suffer irregularities even when the image is recorded with the same amounts of light of the light beams.
It is a general object of the present invention to provide an amount-of-light adjusting method, an image recording method, and an image recording apparatus which are capable of recording a desired image free of irregularities highly accurately on an image recording medium using a plurality of light sources.
A major object of the present invention is to provide an amount-of-light adjusting method, an image recording method, and an image recording apparatus which are capable of recording a desired image highly accurately by correcting localities of the amounts of light of light beams emitted from respective light sources.
Another object of the present invention is to provide an amount-of-light adjusting method, an image recording method, and an image recording apparatus which are capable of recording a desired image highly accurately by correcting irregularities caused by process in an image recording medium.
A further object of the present invention is to provide an amount-of-light adjusting method, an image recording method, and an image recording apparatus which are capable of recording a desired image highly accurately by correcting irregularities caused by sensitivity characteristics of an image recording medium.
A portal column 20 is mounted centrally on the bed 14 over the guide rails 16. Two CCD cameras 22a, 22b are fixed to one side of the column 20 for detecting the position in which the substrate F is mounted with respect to the exposure stage 18. A scanner 26 having a plurality of exposure heads 24a through 24j positioned and held therein for recording an image on the substrate F by way of exposure is fixed to the other side of the column 20. The exposure heads 24a through 24j are arranged in two staggered rows in a direction perpendicular to the directions in which the substrate F is scanned (the directions in which the exposure stage 18 is movable). Flash lamps 64a, 64b are mounted on the CCD cameras 22a, 22b, respectively, by respective rod lenses 62a, 62b. The flash lamps 64a, 64b apply an infrared radiation to which the substrate F is insensitive, as illuminating light, to an image capturing area for the CCD cameras 22a, 22b.
A guide table 66 which extends in the direction perpendicular to the directions in which the exposure stage 18 is movable is mounted on an end of the bed 14. The guide table 66 supports thereon a photosensor 68 movable in the direction indicated by the arrow x for detecting the amount of light of laser beams L emitted from the exposure heads 24a through 24j.
As shown in
In the direction in which the laser beam L reflected by the DMD 36 that is controlled to be turned on or off is emitted, there are successively disposed first image focusing optical lenses 44, 46 of a magnifying optical system, a microlens array 48 having may lenses corresponding to the respective micromirrors 40 of the DMD 36, and second image focusing optical lenses 50, 52 of a zooming optical system. Microaperture arrays 54, 56 for removing stray light and adjusting the laser beam L to a predetermined diameter are disposed in front of and behind the microlens array 48.
As shown in
In
The amounts Ea(x) through Ej(x) of the laser beams L output from the light source units 28a through 28j and guided from the exposure heads 24a through 24j to the substrate F are different from each other prior to adjustment, as shown in
According to the present embodiment, in view of the above various factors responsible for the variations, the amounts of light of the laser beams L output from the light source units 28a through 28j are corrected, and the number of micromirrors 40 that are used to form one pixel of image on the substrate F is set using mask data to control images to have a constant width W1 regardless of the positions in the direction indicated by the arrow x taking the various processes to the final peeling process into consideration, as shown in
The exposure apparatus 10 has an image data input unit 70 for entering image data to be recorded on the substrate F by exposure, a frame memory 72 for storing the two-dimensional image data, a resolution converter 74 for converting the resolution of the image data stored in the frame memory 72 into a higher resolution depending on the size and layout of the micromirrors 4 of the DMDs 36 of the exposure heads 24a through 24j, an output data processor 76 for processing the resolution-converted image data into output data to be assigned to the micromirrors 40, an output data corrector 78 (second amount-of-light correcting means) for correcting the output data according to mask data, a DMD controller 42 (exposure head control means) for controlling the DMDs 36 according to the corrected output data, and the exposure heads 24a through 24j for recording a desired image on the substrate F with the DMDs 36 that are controlled by the DMD controller 42.
A test data memory 80 (test data storage means) for storing test data is connected to the resolution converter 74. The test data are data for recording by exposure a test pattern, which comprises a repetition of constant line widths and constant space widths, on the substrate F, and generating mask data based on the test pattern.
A mask data memory 82 for storing mask data is connected to the output data corrector 78. The mask data are data for specifying micromirrors 40 to be turned off at all times, thereby correcting image localities due to the exposure heads 24a through 24j. The mask data are set by a mask data setting unit 86. The exposure apparatus 10 also has an amount-of-light locality data calculator 88 for calculating amount-of-light locality data based on the amounts of light of the laser beams L detected by the photosensor 68. The amount-of-light locality data calculated by the amount-of-light locality data calculator 88 are supplied to the mask data setting unit 86.
The mask data setting unit 86 sets mask data using a table representative of the relationship between amounts of change in line widths (recorded state) of the test pattern and amounts of change in amounts of light of the laser beams L with respect to the amounts of change in line widths, which table is stored in an amount-of-light/line width table memory 87 (recorded state/amount-of-light storage means). A light source controller 89 (amount-of-light correcting means) corrects the amounts of light of the laser beams L output from the light source units 28a through 28j, using the relationship stored in the amount-of-light/line width table memory 87.
The exposure apparatus 10 according to the present embodiment is basically constructed as described above. A process of correcting the amounts of light of the laser beams L and recording a desired image on the substrate F by way of exposure will be described below with reference to a flowchart shown in
First, the exposure stage 18 is moved to place the photosensor 68 beneath the exposure heads 24a through 24j. Thereafter, the exposure heads 24a through 24j are energized (step S1). At this time, the DMD controller 42 sets all the micromirrors 40 of the DMDs 36 to an on-state for guiding the laser beams L to the photosensor 68.
While moving in the direction indicated by the arrow x in
Based on the supplied amount-of-light locality data, the mask data setting unit 86 generates initial mask data for making constant the amounts Ea(x) through Ej(x) of light of the laser beams L at respective positions x on the substrate F, and stores the initial mask data in the mask data memory 82 (step S4). The initial mask data are established as data for controlling some of a plurality of micromirrors 40 for forming one image pixel at each position x on the substrate F, into an off-state according to the amount-of-light locality data in order to eliminate the locality of the amounts Ea(x) through Ej(x) of light shown in
After the initial mask data have been established, the exposure stage 18 is moved to place the substrate F beneath the exposure heads 24a through 24j, and the exposure heads 24a through 24j are energized based on test data (step S5).
The resolution converter 74 reads test data from the test data memory 80, converts the resolution of the test data into a resolution corresponding to the micromirrors 40 of the DMDs 36, and supplies the resolution-converted test data to the output data processor 76. The output data processor 76 processes the resolution-converted image data into test output data representing signals for selectively turning on and off the micromirrors 40, and supplies the test output data to the output data corrector 78. The output data corrector 78 forcibly turns off those test output data for the micromirrors 40 which correspond to the initial mask data supplied from the mask data memory 82, and then supplies the corrected test output data to the DMD controller 42.
The DMD controller 42 selectively turns on and off the micromirrors 40 of the DMDs 36 according to the test output data that have been corrected by the initial mask data, thereby applying the laser beams L emitted from the light source units 28a through 28j to the substrate F to record a test pattern by exposure thereon (step S6). Since the test pattern is formed according to the test output data that have been corrected by the initial mask data, the test pattern is free of the amount-of-light locality of the laser beams L applied from the exposure heads 24a through 24j to the substrate F. The developing process, the etching process, and the resist peeling process are performed on the substrate F with the test pattern recorded thereon by exposure, producing the substrate F with the test pattern remaining thereon (step S7). As shown in
Inasmuch as the wavelengths, the beam diameters, the focused states, etc. of the laser beams L emitted from the light source units 28a through 28j and applied to the substrate F usually differ from each other, the line widths Wa(x) through Wj(x) or the space widths of the test patterns 90 may not be constant due to photosensitive characteristic differences depending on the wavelength of the photosensitive material applied to the substrate F and irregularities depending on the position x of the developing process, etc.
Accordingly, the line widths Wa(x) through Wj(x) of the test patterns 90 on the substrate F are measured with respect to the respective exposure heads 24a through 24j (step S8). Based on the measured result, the light source controller 89 calculates, with respect to the respective light source units 28a through 28j, as shown in
The mask data setting unit 86 calculates amount-of-light correction variables ΔMa(x) through ΔMj(x) (see
Using the proportion of the amount-of-light correction variables ΔMa(x) through ΔMj(x) to the amounts Ea(x) through Ej(x) (see
n=N·ΔMk(x)/Ek(x)(k:a to j)
The mask data are established to set the n micromirrors 40, among the N micromirrors 40, to the off-state.
After the mask data have thus been established, a desired wiring pattern is recorded by way of exposure on the substrate F (step S12).
First, image data representing a desired wiring pattern are entered from image data input unit 70. The entered image data are stored in the frame memory 72, and then supplied to the resolution converter 74. The resolution converter 74 converts the resolution of the image data into a resolution depending on the resolution of the DMDs 36, and supplies the resolution-converted image data to the output data processor 76. The output data processor 76 calculates output data representing signals for selectively turning on and off the micromirrors 40 of the DMDs 36 from the resolution-converted image data, and supplies the calculated output data to the output data corrector 78.
The output data corrector 78 reads the mask data set in step S11 from the mask data memory 82, corrects the on- and off-states of the micromirrors 40 that are represented by the output data, using the mask data, and supplies the corrected output data to the DMD controller 42. The DMD controller 42 energizes the DMDs 36 based on the corrected output data to selectively turn on and off the micromirrors 40.
The light source units 28a through 28j introduce the laser beams L, whose amounts of light have been adjusted by the light source controller 89, through the optical fibers 30 into the exposure heads 24a through 24j. The laser beams L are applied via the rod lenses 32 and the reflecting mirrors 34 to the DMDs 36. The laser beams L that are selectively reflected in desired directions by the micromirrors 40 of the DMDs 36 are magnified by the first image focusing optical lenses 44, 46, and then adjusted to a predetermined beam diameter by the microaperture arrays 54, the microlens arrays 48, and the microaperture arrays 56. Thereafter, the laser beams L are adjusted to a predetermined magnification by the second image focusing optical lenses 50, 52, and then guided to the substrate F. The exposure stage 18 moves along the bed 14, during which time a desired wiring pattern is recorded on the substrate F by the exposure heads 24a through 24j that are arrayed in the direction perpendicular to the direction in which the exposure stage 18 moves.
After the wiring pattern has been recorded on the substrate F, the substrate F is removed from the exposure apparatus 10, and then the developing process, the etching process, and the peeling process are performed on the substrate F. The amount of light of the laser beam L applied to the substrate F has been adjusted in view of the processes up to the final peeling process. Therefore, it is possible to obtain a highly accurate wiring pattern having a desired line width.
In the above embodiment, the test patterns 90 shown in
Instead of recording the test patterns 90 on the substrate F by way of exposure, as shown in
Gray scale data 92 in n (n=1, 2, . . . ) steps shown in
In the above embodiment, the exposing process, the developing process, the etching process, and the peeling process are performed, and test patterns that are finally obtained are measured to determine mask data. However, test data may be measured as photoresist patterns after exposing process to determine mask data.
Alternatively, mask data may be determined by measuring the line widths or space widths of test patterns arrayed in two different directions, instead of the test patterns 90. For example, as shown in
One factor that is responsible for varying the line widths may be that an edge of a test pattern is recorded differently in the scanning direction and the direction perpendicular to the scanning direction. Specifically, as shown in
Test patterns may be arranged in three or more directions, rather than the two directions described above. Test patterns that are inclined to the directions indicated by the arrows x, y may also be employed. A prescribed circuit pattern may be formed as a test pattern, and the circuit pattern may be measured to correct the amounts of light.
Alternatively, a plurality of mask data depending on the types of photosensitive materials that may be applied to the substrate F may be generated and stored in the mask data memory 82, and corresponding mask data may be selected according to the type of a photosensitive material used to adjust amounts of light and correct output data.
Specifically, as shown in
For recording patterns of the same line width regardless of the different characteristics of the photosensitive materials A, B, it is necessary to establish amount-of-light correction variables depending on the photosensitive materials A, B from the characteristic curves (
According to the present embodiment, the mask data setting unit 86 sets mask data based on the amount-of-light correction variables that are determined for the photosensitive materials A, B, and stores the established mask data in the mask data memory 82. For exposing the substrate F to a desired wiring pattern, mask data corresponding to the type of the photosensitive material entered by the operator are read from the mask data memory 82, and output data supplied from output data processor 76 are corrected by the mask data. In this manner, a highly accurate wiring pattern free of line width variations can be recorded on the substrate F independently of the type of the photosensitive material.
The relationship between the amount ΔE of change in the amount of light of the laser beam L applied to the substrate F and amount ΔW of change in the line width may be wavelength-dependent due to the spectral sensitivity characteristics of the photosensitive material. Though the same photosensitive material is used, the above relationship may differ depending on the wavelength of the laser beams L that are applied from the exposure heads 24a through 24j to the substrate F.
The wavelengths of the laser beams L applied to the substrate F are measured with respect to the respective exposure heads 24a through 24j, and the above relationship of each photosensitive material for the wavelengths is determined with respect to the respective exposure heads 24a through 24j in the amount-of-light/line width table memory 87. The relationship corresponding to the photosensitive material used is selected for each of the exposure heads 24a through 24j to set mask data, and the substrate F is exposed to a desired wiring pattern using the set mask data. By thus recording the wiring pattern, it is possible to form a highly accurate wiring pattern which is not affected by variations of the wavelengths of the laser beams L that are applied from the exposure heads 24a through 24j to the substrate F. Alternatively, the amounts of light of the laser beams L output from the exposure heads 24a through 24j may be adjusted by the light source controller 89 depending on the photosensitive material.
As shown in
Specifically, providing that the wavelengths δ of the laser beams L output from the exposure heads 24a through 24j are known, the spectral sensitivity characteristics S for the exposure heads 24a through 24j depending on the photosensitive material applied to the substrate F are read from the sensitivity characteristic data memory 100. Then, as shown in
For example, if the photosensitive material A of the spectral sensitivity characteristics shown in
Using the light source units 28a through 28j whose amounts of light have thus been adjusted, a wiring pattern having a desired line width can be recorded by way of exposure on the selected photosensitive material. The amounts of light of the laser beams L output from the exposure heads 24a through 24j can also be adjusted by setting mask data.
As shown in
As shown in
Specifically, the beam diameter of the laser beams L output from the exposure heads 24a through 24j is read from the beam diameter data memory 102, and then line width with respect to the beam diameter for the exposure heads 24a through 24j depending on the photosensitive material applied to the substrate F is read from the beam diameter/line width table memory 104. Thereafter, the amounts of light of the laser beams L output from the light source units 28a through 28j are adjusted to set the line width to a desired line width. As a result, a wiring pattern having a desired line width can be recorded by way of exposure on the selected photosensitive material. The beam diameter for each of the exposure heads 24a through 24j may be measured instead of using the beam diameter stored in the beam diameter data memory 102. Alternatively, the amounts of light of the laser beams L output from the exposure heads 24a through 24j may be adjusted by setting mask data.
The exposure apparatus 10 may appropriately be used to expose a dry film resist (DFR) or a liquid resist in a process of manufacturing a multilayer printed wiring board (PWB), to form a color filter or a black matrix in a process of manufacturing a liquid crystal display (LCD), to expose a DFR in a process of manufacturing a TFT, and to expose a DFR in a process of manufacturing a plasma display panel (PDP), etc., for example. The present invention is also applicable to exposure apparatus for use in the field of printing and the field of photography.
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP2006/306366 | 3/28/2006 | WO | 00 | 12/31/2007 |