Patent Application
20050134828
1. Field of the Invention
The present invention relates to a lithographic apparatus, an article support structure, and a device manufacturing method.
2. Brief Description of Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning device, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. comprising part of, one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
In lithographic processing, passing of the projection beam through gas compositions present between the illumination system and the articles to be illuminated, in particular non-homogenous gas compositions, may cause undesired effects such as absorption, diffraction and refraction. These effects may have an adverse effect on illumination quality, in particular on a resolution to be reached for the ever increasing demand in imaging performance. A new generation of lithography, the EUV-lithography, which uses a projection beam in the Extreme Ultraviolet area, therefore operates in or near vacuum conditions in order to allow to pass the projection beam of radiation substantially unhindered to an article to be placed in the beam.
This vacuum technology offers challenges in terms of temperature control. For the article support of the preamble, only a very small part (ranging from 0.1 to 3% of a total area) of the bottom side of the article actually makes physical contact with the article support when supported thereby, since the protrusions are shaped to provide only a very small contact area and the protrusions are furthermore arranged spaced relatively wide apart. In the vacuum pressure ranges that are used, thermal conductivity is substantially proportional to the pressure, which means that the thermal energy absorbed by the article when placed in the projection beam can no longer adequately be diverted, so that unwanted thermal heating of the article supports, leading to thermal expansion and resulting projection inaccuracies or potentially to even the loss of the article. To overcome this problem, a back-fill gas is introduced on the backside of the article offering a thermal conduction from the article to the article support to divert the thermal energy absorbed by the article. An electrostatic wafer support is for instance known from European Patent No. EP1241706.
In the context of this application, the “article” may be any of the above mentioned terms wafer, reticle, mask, or substrate, more specifically terms such as: a substrate to be processed in manufacturing devices employing lithographic projection techniques; or a lithographic projection mask or mask blank in a lithographic projection apparatus, a mask handling apparatus such as mask inspection or cleaning apparatus, or a mask manufacturing apparatus or any other article or optical element that is clamped in the light path of the radiation system.
For a proper and quick proliferation of the backfill gas along the supporting area of the article support, a channel structure is present that provides channeling of the backfill gas over the entire support area in a quick manner. The channel structure usually comprises a linked pattern of trenches or troughs, that substantially transports the backfill gas to the entire area of the support structure.
Conventionally, the article support is provided with protrusions that are arranged to improve the flatness of the substrate. These protrusions have a general diameter of 0.5 mm and are located generally at a distance of 3 mm away from each other and thereby form a bed of supporting members that support the substrate. Typically, the height of the protrusions lies in the range 1 mu m·15 mu m. Due to the relative large spaces in between the protrusions, contaminations possibly present generally do not form an obstruction for the flatness of the substrate, since these will be lying in between the protrusions and will not lift the substrate locally. The gap that is formed by these protrusions between the dielectric and the backside of the article is small enough to prevent the occurrence of breakdown, once electrode is energized and the article is clamped. However, it has been found, that in the channel structure, the local gap defined by the height between the bottom of the channel and the backside of the article increases substantially relative to the normal gap height between the dielectric and the backside of the article. This provides a substantial risk of voltage breakthrough in the gas feed region. In addition, there is a desire to design the channel structure in such a way that the clamp may be used in non-vacuum conditions, since for tuning and testing purposes, it is convenient to operate the electrostatic clamp without applying vacuum. Especially in non-vacuum conditions, breakthrough is likely to occur when the clamp is turned on.
One aspect of the invention is to provide an article support provided with a channel structure that does not suffer from the above identified voltage breakdown problems and that is operable even in non-vacuum conditions.
One aspect of the invention provides a lithographic apparatus according to the features of claim 1. In particular, for a lithographic apparatus, wherein the recessed channel structure comprises a shielding layer for shielding the channel structure from the electrostatic field. Thus, breakthrough in the channel is effectively prevented. Beneficially, the shielding layer prevents or at least diminishes an effective attractive electrostatic field to be developed above the channel structure. Although effectively reducing an overall applied clamping force, especially the absence of clamping pressure above the channel structure is profitable, since due to an effective support in that area, the applied clamping pressure results in unwanted deformation of the article, which contributes negatively to image resolution of the lithographic apparatus.
In a preferred embodiment, the recessed backfill gas feed comprises a channel structure for transporting the backfill gas over a supporting area of the article support, the channel structure comprising the shielding layer. Preferably, the shielding layer comprises a conducting layer enveloping the recessed backfill gas feed.
Further, preferably, the shielding layer is kept at a predetermined voltage relative to the article, thus effectively causing a shielding effect and annihilating the electrostatic field above the channel. Note, that the conducting layer may be the top layer of the channel structure, or may be a deeper buried layer, as long as effective shielding is obtained. The shielding layer may be a grounded layer. Additionally, the article support may comprises a ground electrode for contacting the article during support. To this end, in a preferred embodiment the shielding layer may contact the article during support.
The electrostatic clamp may comprise an electrode extending over the supporting area of the article support and a dielectric layer, the dielectric layer covering the electrode. The channel structure may be comprised in the dielectric layer. The dielectric layer may comprise a plurality of supporting protrusions for supporting the article.
In one embodiment, the article support is a support for supporting a patterning device, the patterning device serving to impart the projection beam with a pattern in its cross-section. In another embodiment, the article support is a substrate table for holding a substrate to be patterned by a patterned beam onto a target portion of the substrate. Another aspect of the invention is directed to an article support structure according to the features of claim 15. Another aspect of the invention is directed to a lithographic apparatus according to the features of claim 19. Another aspect of the invention is directed to a method of manufacturing a device according to the features of claim 20.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “patterning device” or “patterning structure” used herein should be broadly interpreted as referring to a device or structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning devices may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned. In each example of a patterning device, the support structure may be a frame or table, for example, which may be fixed or movable and which may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. Immersion liquids may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
As here depicted, the apparatus is of a reflective type (e.g. employing a reflective mask or a programmable mirror array of a type as referred to above). Alternatively, the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
The illuminator IL receives a beam of radiation from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is a plasma discharge source. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is generally passed from the source SO to the illuminator IL with the aid of a radiation collector comprising for example suitable collecting mirrors and/or a spectral purity filter. In other cases the source may be integral part of the apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, may be referred to as a radiation system.
The illuminator IL may comprise an adjuster that adjusts the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. The illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
The projection beam PB is incident on a patterning device, illustrated in the form of the mask MA, which is held on the mask table MT. Being reflected by the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning structure PW and position sensor IF2 (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning structure PM and position sensor IF1 can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning structure PM and PW. However, in the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
The depicted apparatus can be used in the following preferred modes.
In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the projection beam is projected onto a target portion C in one go (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the projection beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT is determined by the de-magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the projection beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device may be updated after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
In
While specific embodiments of the invention have been described above, it will be appreciated that the aspects of the invention may be practiced otherwise than as described. The description is not intended to limit the aspects of the invention.
