Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method

Abstract

A lithographic apparatus includes a system to compensate for the effect of thermal distortion of the substrate table on position measurements of the substrate table using lateral mirrors in the substrate table. Methods of calibrating a lithographic apparatus using various substrate table scan trajectories and measurements of the localized position and rotation of lateral mirrors in the substrate table are presented. A dual stage lithographic apparatus with alignment marks defining the geometry of a lateral mirror used only at the exposure station to measure the geometry of the lateral mirror when the substrate table is at the measurement station.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:

FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention;

FIGS. 2 and 3 depict a conventional liquid supply system used in lithographic projection apparatus;

FIG. 4 depicts a conventional liquid supply system used in a lithographic projection apparatus;

FIG. 5 depicts a lithographic apparatus with a substrate table temperature monitoring system, a disturbance determining device, and a control system according to an embodiment of the invention;

FIG. 6 illustrates measurement and exposure stations in a dual stage immersion system;

FIG. 7 depicts motion of the substrate table during an alignment calibration run; and

FIG. 8 depicts a substrate table with alignment marks along the Y-expose mirror.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. UV radiation or DUV radiation), a support structure (e.g. a mask table) MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters, a substrate table (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters, and a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g. including one or more dies) of the substrate W.

The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.

The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”

The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.

The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.

The illuminator IL may include an adjuster AM for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.

The radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used to accurately position the mask MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).

Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the following modes:

1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at once (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.

2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.

3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.

Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.

For substrate exposure sequences in which the substrate is moved relative to the projection system, an accurate system is desired to determine the position of the substrate W relative to the projection system PS during exposure, to ensure accurate repeatability of the movement during later exposure sequences and good overlay.

In order to determine the position of the substrate W relative to the projection system PS, the position of the substrate table WT relative to the projection system PS is determined. This may be achieved by forming mirrors in lateral surfaces of the substrate table WT, for example by attaching reflective components, element or members or by applying a reflective coating to the sides of the substrate table WT. In order to determine the position of the substrate table WT in the two dimensions of horizontal movement, it is desirable that at least two mirrors are provided at a non-zero angle relative to each other. An example configuration is to provide a nominally rectangular (or square) substrate table WT and form reflective elements or members in at least two sides of the substrate table WT, substantially perpendicular to each other. For example, defining X and Y as perpendicular axes in the plane of the substrate table WT (i.e. each substantially perpendicular to an axis of the projection system PS), a first mirror may be provided in a lateral side of the substrate table WT that is nominally perpendicular to the X axis and a second mirror may be provided in a lateral side of the substrate table WT that is nominally perpendicular to the Y axis (such mirrors are labeled 66 and 68 in FIG. 7—see below). Using interferometers arranged to reflect light from each of these mirrors and determine in each case a distance between the interferometer and the mirror surface, it is possible to determine the position of the substrate table WT along the X- and Y-axes respectively.

FIG. 5 shows a control system 54 configured to move a substrate W relative to the projection system PS during exposure in order to form a desired pattern on the substrate W. Feedback and/or feedforward control systems may be incorporated into the control system 54 in order to move the substrate table WT accurately through a desired sequence of positions using a substrate table displacement device 50. The position of the substrate table WT is provided to the control system 54, during the movement, by the substrate table position determining device 53 in combination with interferometers 52. As discussed above, the interferometers 52 may operate by reflecting light from mirrors 66,68 formed in lateral surfaces of the substrate table WT and measuring the local position of the corresponding mirror surface using interferometry.

Errors in the substrate table position provided by the substrate table position determining device 53 may cause corresponding errors in the operation of the control system 54 and the substrate table WT may be moved along a slightly different path during exposure than that intended. This may cause errors in the alignment of the pattern eventually formed on the substrate as well as a reduction in the quality of the overlay.

One way in which errors might occur is if the mirrors 66, 68 are disturbed from their nominal position and orientation relative to each other. Distortion of the substrate table WT caused by heating (from the exposure radiation, for example) and/or cooling (from evaporation of immersion liquid, where present, in the seal member, for example) may cause the mirrors to become distorted and mis-aligned with each other. Where the mirrors are nominally arranged to be perpendicular to each other, the angular misalignment may be termed “non-orthogonality”.

According to the embodiment of the invention illustrated in FIG. 5, the substrate table position determining device 53 is adapted to compensate for this distortion based on a mirror disturbance determined by reference to measurements of the temperature of the substrate table WT.

The temperature of the substrate table WT is determined using a substrate table temperature monitoring device 58, which, in the embodiment shown, is connected to a plurality of temperature sensors 55 formed near the surface of the substrate table WT. Variations in this arrangement are possible. For example, a single temperature sensor may be used instead of a plurality of temperature sensors 55. Furthermore, instead of the sensors 55 being formed within the body of the substrate table WT, they may be affixed to an exterior surface.

The relationship between the measured temperature(s) and the mirror disturbance (for example, change in shape, position and/or alignment/orthogonality) of the mirrors 66,68 is determined by a disturbance determining device 57. The disturbance determining device 57 may calculate an expected distortion of the substrate table WT based on first principles, for example using a model of the thermal and mechanical properties of the substrate table WT and the appropriate physical laws. Alternatively, as shown in FIG. 5, a storage device 56 may be provided containing calibration data which provide a mapping from particular values of the measured temperature(s) to the expected distortion of the substrate table WT and mirrors 66,68 (or just of the mirrors directly). The calibration data to be stored in the storage device 56 may be obtained by carrying out exposure runs using trial wafers and patterns, and measuring the temperature(s) of the substrate table WT and corresponding distortion (independently) for a variety of different operating conditions. Interpolation may be used to derive data where measured temperature readings fall between those dealt with in the calibration tables stored in the storage device 56.

Calculating the expected distortion based on first principles or a theoretical model obviates the need for calibration experiments. On the other hand, the use of calibration data obviates the need for computing resources and in depth theoretical understanding of the properties of the substrate table WT and surrounding components.

The substrate table position determining device 53 receives an output from the disturbance determining device 57 and is arranged to calculate the position of the substrate table taking account of the disturbed position, shape and/or orientation of the mirrors. The substrate table position communicated to the control system 54 is therefore more accurate than would be the case if the mirror disturbance had not been compensated for. Imaging accuracy and overlay are therefore improved.

In general the thermal load of the substrate table WT is function of the substrate number (i.e. it depends on the recent exposure history of the apparatus, including how many substrates of a given lot have already been exposed), the scan routing of the substrate, the alignment scheme being used and the exposure settings of the projection system PS. In combination with the long time constants of the substrate table WT and the high thermal resistance of the substrate table WT, the deformation becomes a function of time.

Active compensation of thermal effects may not provide a complete solution. In addition to thermally-induced distortion of the substrate table WT during exposure, the relative orientation between different mirrors may still shift over time and/or from one substrate exposure to the next due to other factors. For example, the substrate table WT may not return exactly to its original shape after being heated and/or cooled by exposure radiation and/or immersion system components during a given run due to irreversible processes associated with thermal cycling of the substrate table WT. Errors may occur in the determination of the substrate table position even in the presence of a system configured to determine an expected disturbance of substrate table mirrors based on measurements of the substrate table temperature, because the theoretical model or calibration tables used to link the measured temperature(s) of the substrate table to the mirror distortion would not take into account changes to the system properties that occur from one substrate exposure to the next.

One possible approach would be to carry out a detailed measurement of the pre-exposure disturbance of the mirrors before each exposure of the substrate. However, such an approach would be time-consuming and would lower the throughput of the lithography apparatus. FIG. 7 illustrates an alternative approach in which a scanning run used for a separate alignment step is exploited to simultaneously carry out an effective mirror disturbance measurement. Because no separate scanning procedures are needed for the disturbance measuring process, there is no significant reduction in throughput. Therefore, improved imaging accuracy and overlay may be obtained without any (or at least with a reduced) throughput cost.

As discussed above, the determination of the position of the substrate table WT relative to the projection system PS may be used as part of the process of determining the position of the substrate W relative to the projection system PS. However, it is also desirable to determine the spatial relationship between the substrate W and the substrate table WT. It is with alignment procedures associated with determining this latter property that the background (or pre-exposure) mirror disturbance determining procedure according to an embodiment of the invention is combined.

The alignment of the substrate W relative to the substrate table WT may be carried out while the substrate table WT is in substantially the same position as it will be for exposure of the substrate with the desired dose pattern. An alternative arrangement is illustrated schematically in FIG. 6 (which may be applied to any of the embodiment described above) where a separate measurement station 46 (also referred to as a substrate to substrate table alignment device when configured to perform this function) is provided to performe the substrate alignment and/or levelling. When the alignment is complete, the substrate table WT is moved to an exposure station 44, where exposure of the desired dose pattern onto the substrate W can be carried out. Normally, only the exposure station 44 would be provided with a system to maintain an immersion liquid between the final element of the projection system PS and the substrate W (for example the seal member 40 for containing the immersion liquid). Generally, in such a setup, the substrate table WT is provided with a reference 48, sometimes referred to as a fiducial, which can include a plate etched through with a pattern corresponding to a standard alignment mark underneath which is a radiation sensor, also known as a transmission image sensor (TIS), responsive to radiation. At the measurement station 46, the substrate table WT is moved to detect the reference 48 using an alignment system within a measurement system 42 and then to detect the alignment marks on the substrate W thereby enabling the location, in directions X, Y and Rz (rotation about the Z-axis) of the alignment marks to be found (in other words a map of the substrate alignment marks is obtained at the measurement station 46, corresponding in effect to a map of a spatial relationship between the substrate W and substrate table WT). In an embodiment, the location of the alignment marks are measured and determined relative to the reference 48.

Level measurement of the substrate W can also be carried out at the measurement station 46. In order to measure the level of the substrate W, a leveling beam (projected from the measurement system 42) can be used that traverses a first grating prior to reflection by the substrate W. A second grating is then placed in the path of the leveling beam after reflection by the substrate W. The extent to which the images of the first and second gratings coincide is measured by a level measurement sensor and is determined by the height and/or tilts of the substrate W (the Z coordinate, rotation about the X-axis, Rx, and the rotation about the Y-axis, Ry, are thus determined). For a further description of level measurement of substrates reference is made to European patent application EP 02,257,251 herein incorporated in its entirety by reference. Hence, using data from the alignment of the substrate W and the level measurement of the substrate W a map of the substrate W can be generated at the measurement station 46.

An example arrangement is shown in FIG. 7, where alignment of the substrate W relative to the substrate table WT is carried out using two transmission image sensors (TISs) 60 and 62 (corresponding to particular embodiments of the reference 48 mentioned above). The TISs 60 and 62 are fixed relative to the substrate table WT and are positioned outside of the region of the substrate W on an upper surface of the substrate table WT. Alignment marks on the substrate W and on the TISs are then exposed by the alignment system within the measurement system 42 and the spatial relationship between the substrate W and the substrate table WT can be determined. In a dual stage system, the alignment measurements would be carried out at a measurement station 46 as described above.

In the configuration shown in FIG. 7, the substrate table WT is moved so as to expose regions along the line of arrow 64, starting by exposing a first TIS 60, followed by a series of regions on the substrate W, and finishing at a second TIS 62. The path 64 may be chosen so as to move the substrate table WT through the full range of positions, in both X and Y directions, that will be encountered during exposure of the pattern to be formed on the substrate W in the pattern exposure stage. Preferably, the substrate table WT is moved along a substantially 45 degree path relative to the planes of the mirrors.

According to an embodiment of the invention, a mirror alignment-determining device 65 is provided which determines a misalignment between different mirrors 66 and 68 in the substrate table WT by reference to measurements from interferometers 51 and 52 configured respectively to reflect radiation from localized regions on the respective mirrors. The interferometers are configured simultaneously each to emit a plurality of laser beams (for example two), spatially separated along a direction substantially parallel to the surface of the corresponding mirror in the plane of the substrate table WT (i.e. perpendicular to the axis (the “Z-axis”) of the projection system PS) but with a separation that is small relative to the width of the mirrors so as to make a localized measurement of the mirror surface. The provision of a plurality of simultaneous radiation beams makes it possible for the interferometers to measure not only the relative position of the localized portion of the mirror being measured but also the local rotation of the mirror surface about the Z-axis. If there is no rotation (i.e. the portion of the mirror surface is perpendicular to the radiation beams), no difference in length of the radiation beams will be detected. If finite Z rotation exists, there will be a difference in length of the radiation beams and the extent of the difference in length will reveal the extent of the rotation. For the configuration shown in FIG. 7, local effective rotation of the X mirror surface about the Z axis, detected by interferometer 51, is denoted Rzx. Local effective rotation of the Y mirror surface about the Z-axis, detected by interferometer 52, is denoted Rzy.

When the substrate table WT is moved relative to the projection system PS along path 64, the interferometers can measure the position of the mirror surfaces and their local Rzx and Rzy values at a number of different positions on their respective surfaces. The separation of measured portions on the mirror surfaces will depend on the frequency at which measurements are made: the “sampling frequency”. The shape of the mirror surfaces can be derived by reference to the local mirror positions measured at each of the sampled points (i.e. the separation of the portion of the mirror from which the inteferometer reflects light from the interferometer, or the length of the interferometer radiation beam). The average rotation of a mirror may be derived by taking a weighted mean of the Rzx or Rzy values of the sampling points for that mirror. The weighting is desirable because the density of measured regions on a given mirror may vary during the alignment scan. In the arrangement shown in FIG. 7, assuming constant scanning speed and sampling frequency, each of the samples could be given the same weighting because the substrate table WT moves in a straight line from the start of the alignment scan to the end of the alignment scan. However, if the alignment scan was not straight, or the scanning speed and/or samples frequency were variable, the density of points would vary and it would be desirable to apply different weightings to different samples. For example, in regions of the mirror where samples were taken more frequently, it might be necessary to reduce the sample weighting so that the local surface rotation in that region does not contribute excessively to the calculation of the average rotation, and vice versa.

If the average rotation of the X mirror 66 is denoted xrot and the average rotation of the Y mirror 68 is denoted yrot, the overall misalignment of the X and Y mirrors (or non-orthogonality) is the difference in the mean values of Rzx and Rzy:

misalignment=yrot−xrot=mean(Rzy)−mean(Rzx)=mean(Rzy−Rzx).

Combining the measurements of Rzx and Rzx along the diagonal scan with scans along X and Y can be used to derive more detailed information about the shape and orientation of the mirrors.

As described above, when the mirrors of a mirror block have a shape Y(X) and X(Y) to a perfectly rectangular mirror block, the Rzx and Rzy measurement will measure the local angle of the mirror as function of the position along the mirror, as follows:

Rzy=d{Y(X)}/dX

Rzx=−d{X(Y)}/dY

Reversing the equations yields:

$Y\left(X\right)={\int }_0^XRzy\left(x\right)x+Y\left(0\right)$ $X\left(Y\right)=-{\int }_0^YRzx\left(y\right)y+X\left(0\right)$

Scanning in the X-direction at Y=Yfixed and measuring both Rzx and Rzy gives:

$\begin{array}{c}\mathrm{ScanY}\left(X\right)={\int }_0^X\left(Rzy\left(x\right)-Rzx\left(\mathrm{Yfixed}\right)\right)x\\ ={\int }_0^X\left(Rzy\left(x\right)\right)x-Rzx\left(\mathrm{Yfixed}\right)X\\ =Y\left(X\right)-Y\left(0\right)-aX\end{array}$

Rearranging gives:

Y(X)=ScanY(X)+Y(0)+aX

This is the shape of the mirror Y(X) relative to an unknown rotation ax and translation Y(0), so Y(X) is known relative to a line. Scanning in Y-direction at X=Xfixed and measuring both Rzx and Rzy gives:

$\begin{array}{c}\mathrm{ScanX}\left(Y\right)={\int }_0^Y\left(Rzy\left(\mathrm{Xfixed}\right)-Rzx\left(y\right)\right)y\\ =-{\int }_0^Y\left(Rzx\left(y\right)\right)y+Rzy\left(\mathrm{Xfixed}\right)Y\\ =X\left(Y\right)-X\left(0\right)-\mathrm{bY}\end{array}$

Rearranging gives:

X(Y)=ScanX(Y)+X(0)+bY

This is the shape of the mirror X(Y) relative to an unknown rotation bY and translation X(0), so X(Y) is known relative to a line.

Scanning in X and Y in a 45 degree angle measuring both Rzx and Rzy gives, at a general point on the scan line defined by X=S and Y=S:

$\begin{array}{c}\mathrm{ScanXY}\left(S\right)={\int }_0^S\left(Rzy\left(s\right)-Rzx\left(s\right)\right)s\\ ={\int }_0^SRzy\left(s\right)s-{\int }_0^SRzx\left(s\right)s\end{array}$

and since Rzy only depends on X and Rzx only on Y, the following is true:

$\begin{array}{cc}\mathrm{ScanXY}\left(S\right)={\int }_{0}^XRzy\left(x\right)x-{\int }_0^YRzx\left(y\right)y& \mathrm{for}X=S,Y=S\\ =\left\{Y\left(X\right)-Y\left(0\right)\right\}+\left\{X\left(Y\right)-X\left(0\right)\right\}& \mathrm{for}X=S,Y=S\\ =\left\{\mathrm{ScanY}\left(X\right)+\mathrm{aX}\right\}+\left\{\mathrm{ScanX}\left(Y\right)+\mathrm{bY}\right\}& \mathrm{for}X=S,Y=S\\ =\left\{\mathrm{ScanY}\left(X\right)+\mathrm{ScanX}\left(Y\right)\right\}+\left\{\mathrm{aX}+\mathrm{bY}\right\}& \mathrm{for}X=S,Y=S\\ =\left\{\mathrm{ScanY}\left(S\right)+\mathrm{ScanX}\left(S\right)\right\}+\left\{\mathrm{aS}+\mathrm{bS}\right\}& \end{array}$

Rearranging gives:

{aS+bS}=ScanXY(S)−{ScanY(S)+ScanX(S)}

Now we have the following equations involving the results from three scans:

X(Y)=ScanX(Y)+X(0)+bY

Y(X)=ScanY(X)+Y(0)+aX

{aS+bS}=ScanXY(S)−{ScanY(S)+ScanX(S)}

Splitting the mirror rotations bY and aX into a rigid mirror block rotation “r” and shear “f” gives:

$X\left(Y\right)=\mathrm{ScanX}\left(Y\right)+X\left(0\right)-\mathrm{rY}+\mathrm{fY}$ $Y\left(X\right)=\mathrm{ScanY}\left(X\right)+Y\left(0\right)+\mathrm{rX}+\mathrm{fX}$ $\begin{array}{c}\mathrm{ScanXY}\left(S\right)-\left\{\mathrm{ScanY}\left(S\right)+\mathrm{ScanX}\left(S\right)\right\}=\left\{\left(r+f\right)S+\left(-r+f\right)S\right\}\\ =2\mathrm{fS}\end{array}$

From the last equation, the shear “f” can be determined:

fS=0.5*{ScanXY(S)−{ScanY(S)+ScanX(S)}}

Taking the derivative gives:

$\begin{array}{c}f=d\left[0.5*\mathrm{ScanXY}\left(S\right)-\left\{\mathrm{ScanY}\left(S\right)+\mathrm{ScanX}\left(S\right)\right\}\right\}]/\mathrm{dS}\\ =0.5*\left\{d\left[\mathrm{ScanXY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanX}\left(S\right)\right]/\mathrm{ds}\right\}\end{array}$

which is basically subtracting linear fits from the scans ScanX and ScanY from the linear fit of ScanXY. Substituting:

$X\left(Y\right)=\mathrm{ScanX}\left(Y\right)+X\left(0\right)-\mathrm{rY}+0.5*\{d\left[\mathrm{ScanXY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanX}\left(S\right)/\mathrm{ds}\right\}*YY\left(X\right)=\mathrm{ScanY}\left(X\right)+Y\left(0\right)-\mathrm{rX}+0.5*\{d\left[\mathrm{ScanXY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanY}\left(S\right)\right]/\mathrm{ds}-d\left[\mathrm{ScanX}\left(S\right)/\mathrm{ds}\right\}*X$

which leaves only the unknown positions X(0) and Y(0), and the unknown rotation “r”. These parameters are routinely determined when the substrate is aligned relative to the substrate table.

Therefore, the three scans ScanX, Scan Y and ScanXY can give the mirror shapes X(Y) and Y(X).

The accuracy of the interferometric measurements (i.e. ScanX, ScanY and ScanXY) during the above scans dictates the precision with which the mirror shapes can be obtained. Taking many readings during a slow scan over the mirrors can reduce errors from the interferometry. However, this approach takes a long time and may reduce throughput where it is desirable to measure the mirror shapes on a regular basis (for example, between every exposure).

In lithography applications, it is often the case that the interferometry measurements are subject to errors with high frequency components: so-called “rapid errors”. For example, rapid errors may be defined as those that occur on time scales that are significantly shorter than the time necessary to carry out a measurement scan across the mirror over a distance equal to the minimum expected wavelength of the mirror distortions of interest (or resolution of the mirror distortion measuring process). For example, in the case where the wavelength of mirror deformations to be measured is 20 mm and the scan speed over the mirror is 500 mm/s, the relevant time scale for defining “rapid errors” would be 20 mm/500 mm/s=25 ms. Noise occurring on time scales shorter than 25 ms will be filtered out (by averaging) if enough samples are taken during that 25 ms period. For a typical sampling rate of 0.2 ms, 125 samples would be taken during the 25 ms, which would significantly filter out the rapid errors.

If the entire mirror of, say, 400 mm is measured at a scanning speed of 500 mm/s, the total measurement time is 0.8 s. Therefore, (large wavelength) drifts slower than 0.8 seconds are also avoided. After removal of the rapid errors and the slow drifts in this way, all that is left are the changes that occur on intermediate time scales: namely between 25 ms and 0.8 seconds, which are not expected to be too large. For example, it is normal to have thermal substrate table drifts deforming the mirrors on time scales of the order of minutes, and air pressure changes in the interferometer beams creating noise on the ms scale. Both of these sources of noise could be avoided by measuring the mirror at a scanning speed of 500 mm/s for a 400 mm mirror for 20 mm typical wavelength mirror deformations.

More generally, the scanning speed should be chosen so that an entire scan of the mirror can be carried out significantly more quickly than the time required for important mechanisms of slow drift to have a significant effect on the measurement signal. The optimal speed to use in the rapid scan of the present embodiment will depend, therefore, on the particular error mechanisms present.

In summary, the rapid scanning avoids slow drift errors, such as thermal drift of the substrate table WT over minutes, and sampling quickly or carrying out multiple scans allows rapid noise, such as that occurring from pressure variations and other rapid error sources, to be filtered out by averaging. Pressure sensors and thermal sensors may be used to remove the long-term drift of air pressure and air temperature, leaving only the noise.

Where noise in the air pressure/temperature is a factor, the source of the noise will have an effect. For example, in immersion lithography systems where air knives are used to contain an immersion liquid in the region between a final element of the projection system PS and the substrate W, the operational details and quality of the air knife apparatus will be important.

Where dynamical deformation of the substrate table WT and mirrors is expected to be a factor, it may be expected that the acceleration part of the scan may have higher errors than the constant velocity part. In this case, taking readings only during the constant velocity phase of the substrate table WT movement could reduce errors.

As discussed above, the measurement scan speed over the mirror should be chosen to be fast enough to filter out thermal drift and slowly varying errors. However, the scan speed should not be too high otherwise an increased number of rapid errors may start to contribute to the signal unless sampling speeds can be suitably increased. For example, pressure sensors may be provided to measure atmospheric pressure variations, which can be compensated for. However, the pressure sensors may have a limited range so that pressure variations that occur too quickly to be detected and compensated for by the pressure sensor may contribute to errors in the mirror measurement unless the mirror is scanned slowly enough for these errors to be filtered/averaged away. Therefore, a balance can be struck between measurement scanning speeds that are fast enough to filter out thermal drift and other slow drift errors, and scanning speeds that are slow enough that sufficient sampling can be used to filter out rapid noise sources.

It has been found that, in immersion systems, a reproducibility of the interferometric measurements of better than 0.5 nm can be achieved using only the constant velocity part of scans with scan speeds between 0.55 and 1.1 m/s. These scan speeds correspond to scan times of around 0.5 seconds.

As mentioned above, in a dual stage lithographic system, substrate alignment measurements may be carried out with the substrate table WT at a measurement station 46 and means provided to move the substrate table WT from the measurement station 46 to an exposure station 44 when alignment is completed and the substrate W is ready to be exposed. Mirrors are formed in lateral sides of the substrate table WT and are used to measure the position of the substrate table WT while it is being scanned at the measurement station 46 and at the exposure station 44. In certain systems, it is beneficial to use different mirrors for position measurements at the measurement station 46 than at the exposure station 44. This may mean different mirrors for both the X and Y position measurements or, alternatively, different mirrors for just the X or just the Y position measurement. For example, a common mirror may be used for the X measurement, while two mirrors are provided for the Y measurement. Where two mirrors are provided, they may be denoted Y-measure, for the mirror used at the measurement station, and Y-expose, for the mirror used at the exposure station, and may be located on opposite sides of a substrate table WT, for example.

When using different mirrors at the measurement and exposure stations, the relative alignment and/or shape between the mirrors (i.e. the spatial relationship between the mirrors) may change between exposures (due to heating for example), which may lead to overlay errors. Where the same mirrors are used, unexpected mirror deformations would not cause such a problem for overlay as long as the mirrors have the same error during alignment and exposure.

According to an embodiment of the present invention, which is depicted in FIG. 8, this problem is overcome by providing alignment marks 70 on an upper side of the substrate table WT in close proximity to the mirror that is going to be used during alignment at the exposure station 44—the Y-expose mirror 72, which is positioned opposite Y-measure mirror 74. The shape of the substrate table WT has been exaggerated to highlight the deviation from its nominally rectangular form. The so-called “non-ortho” or misalignment between the Y-expose and Y-measure mirrors 72 and 74 is shown by angle 78. The shared X mirror is denoted 76.

The alignment marks 70 should preferably be located within about 10 mm of the Y-expose mirror 72. In a typical system, this separation would cause about 0.05 nm uncertainty in the local shape of the Y-expose mirror 72 as determined from the positions of the alignment marks 70, which is acceptable. This estimate is based on a thermal expansion coefficient of 50×10−9, and a temperature shift of 0.1 K, the shift in separation of an alignment mark 70 from a corresponding point on the Y-expose mirror being given by

(50×10⁻⁹)×0.1×(10×10⁻³)=0.05×10⁻⁹ nm.

During alignment at the measurement station 46, the position of substrate alignment marks 80 are measured relative to the X and Y mirrors operative at the measurement station 46 (the shared X mirror 76 and the Y-measure mirror 74). The positions of the alignment marks 70 are also measured, which, being in close proximity to the surface of the Y-expose mirror 72, correspond closely to the form of the surface of the Y-expose mirror 72. Measurement of the position of the alignment marks 70 relative to the X and Y-measure mirrors 76 and 74 thus yields the spatial relationship between the Y-expose mirror 72 and the Y-measure mirror 74. The precision of the spatial relationship thus obtained will depend on the number of alignment marks 70 that are provided (more closely spaced markers can more precisely define the shape of the mirror surface, picking up small scale deviations for example). As measurement of the alignment marks 70 may take extra time, though, it may be beneficial to measure only a reduced number of alignment marks 70 so as not to compromise throughput too greatly. A change in the relative angle between the Y-expose and Y-measure mirrors 72 and 74 could be obtained by as few as two or three alignment marks 70, for example.

Once the spatial relationship between the Y-expose mirror 72 and the Y-measure mirror 74 has been established, alignment measurements carried out at the measurement station 46 using the Y-measure mirror 74 can be applied when moving the substrate table using the Y-expose mirror 72 at the exposure station 44.

Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.

The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm).

The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive and reflective optical components.

While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.

The present invention can be applied to any immersion lithography apparatus, in particular, but not exclusively, those types mentioned above.

The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims

1. A lithographic apparatus comprising: a projection system arranged to project a pattern from a patterning device onto a substrate;a substrate table constructed to support the substrate and including at least one reflective element formed in a lateral side thereof;a substrate table displacement device configured to move the substrate table relative to the projection system;a substrate table temperature monitor configured to determine a temperature of at least a portion of the substrate table;a disturbance detector configured to estimate a thermally-induced shift in at least one of a position, orientation or shape of the at least one reflective element using the temperature determined by the substrate table temperature monitor;a substrate table position detector arranged to determine a position of said substrate table by reflecting radiation from the at least one reflective element and taking into account the thermally-induced shift of the at least one reflective element estimated by the disturbance detector; anda control system arranged to supply a control signal to the substrate table displacement device so as to move said substrate table along a pre-determined path, said control signal being determined based on the position of the substrate table determined by the substrate table position detector.

2. A lithographic apparatus according to claim 1, wherein said substrate table includes two substantially planar reflective elements formed on lateral sides thereof and said disturbance detector is arranged to determine a thermally-induced shift in angle defined between the two reflective elements.

3. A lithographic apparatus according to claim 1, further comprising a storage device including calibration data providing a mapping between measured temperatures of at least a portion of the substrate table and corresponding shifts in at least one of the position, orientation or shape of a reflective element formed on a side of the substrate table, and wherein said disturbance detector is configured to estimate said thermally-induced shifts by extracting data from said calibration table.

4. A lithographic apparatus according to claim 1, wherein said disturbance detector is configured to estimate said thermally-induced shift using a mathematical model describing how the substrate table is expected to be distorted as a function of the temperature of at least a portion of the substrate table.

5. A lithographic apparatus according to claim 1, further comprising: a liquid supply system configured to at least partly fill a space between a final element of said projection system and said substrate with liquid; anda seal member arranged to substantially contain said liquid within said space between said final element of the projection system and said substrate.

6. A device manufacturing method comprising: providing a substrate table to support a substrate and having at least one reflective element formed on a lateral side thereof;providing a substrate table displacement device to move the substrate table relative to a projection system;determining a temperature of at least a portion of the substrate table;estimating a thermally-induced shift in at least one of the position, orientation or shape of the at least one reflective element using said determined temperature;determining a position of said substrate table by reflecting radiation from the at least one reflective element and taking into account the estimated thermally-induced shift in at least one of a position, orientation or shape of the at least one reflective element; andusing a control system to move said substrate table along a pre-determined path using said substrate table displacement device, a control signal for said control system being determined based on the determined position of the substrate table that takes into account the estimated shift of the at least one reflective element.

7. A method of calibrating a lithographic apparatus, comprising: providing a substrate table to support a substrate, the substrate table including first and second substantially planar reflective members formed on respective lateral sides thereof, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table, and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;moving said substrate table between a first position and a second position;during movement of the substrate table between the first position and the second position, reflecting radiation from said first reflective member to measure a first local effective rotation of a surface of the first reflective member about a third axis substantially perpendicular to the first and second axes and at a plurality of different points on the first reflective member, and reflecting radiation from said second reflective member to measure a second local effective rotation of a surface of the second reflective member about the third axis and at a plurality of different points on the second reflective member; andderiving an estimate of a shift in angle defined between the first and second reflector members by calculating a difference between a calculated mean of the measured values of said first local effective rotation and a calculated mean of the measured values of said second local effective rotation or a mean difference between corresponding pairs of the measured values of said first and second local effective rotations.

8. A method according to claim 7, wherein in said deriving, the calculated means are derived taking into account a density of measurements of said first and second local effective rotations made during movement of the substrate between the first and second positions.

9. A method according to claim 8, wherein the density of measurements is taken into account by weighting individual measurements of said first and second local effective rotations, when calculating the mean, according to the spatial density of measurements being taken at the corresponding point on the surface of the reflective member in question.

10. A method according to claim 9, wherein a higher weighting is given to measurements made in regions of relatively low measurement density than to measurements made in regions of higher measurement density.

11. A method according to claim 7, wherein, substantially simultaneously with the deriving, movement of the substrate table from the first to the second position is used to measure alignment marks on the substrate and substrate table so as to determine a spatial relationship between the substrate and substrate table.

12. A device manufacturing method, comprising: providing a substrate table to support the substrate, the substrate table including first and second substantially planar reflective members formed on respective lateral sides thereof, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table, and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;moving said substrate table between a first position and a second position;during movement of the substrate table between the first position and the second position, reflecting radiation from said first reflective member to measure a first local effective rotation of a surface of the first reflective member about a third axis substantially perpendicular to the first and second axes and at a plurality of different points on the first reflective member, and reflecting radiation from said second reflective element to measure a second local effective rotation of a surface of the second reflective member also about the third axis and at a plurality of different points on the second reflective member;deriving an estimate of a shift in angle between the first and second reflector members by calculating a difference between a calculated mean of the measured values of said first local effective rotation and a calculated mean of the measured values of said second local effective rotation or a mean difference between corresponding pairs of the measured values of said first and second local effective rotations; andusing said estimate of the shift to control movement of the substrate table relative to a projection system in a lithographic apparatus during later exposure of the substrate with a radiation beam patterned by a patterning device and projected by said projection system, the lithographic apparatus being configured to use radiation reflected from said first and second reflective members to monitor and control a position of the substrate table during said exposure.

13. A lithographic apparatus comprising: a substrate table configured to support a substrate;first and second substantially planar reflective members formed on respective lateral sides of the substrate table, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table, and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;a substrate table displacement device arranged to move said substrate table between a first position and a second position;a first interferometer arranged to reflect, during movement of the substrate table between the first position and the second position, radiation from said first reflective member to thereby measure a first local effective rotation of a surface of the first reflective member about a third axis substantially perpendicular to the first and second axes and at a plurality of different points on the first reflective member;a second interferometer arranged to reflect, during said movement, radiation from said second reflective member to thereby measure a second local effective rotation of a surface of the second reflective member also about the third axis and at a plurality of different points on the second reflective element; anda mirror alignment detector arranged to derive an estimate of a shift in angle defined between the first and second reflector members by calculating a difference between a calculated mean of the measured values of said first local effective rotation and a calculated mean of the measured values of said second local effective rotation or a mean difference between corresponding pairs of the measured values of said first and second local effective rotations.

14. A method of calibrating a lithographic apparatus, comprising: providing a substrate table configured to support a substrate, said substrate table being provided with first and second reflective members formed on respective lateral sides thereof;moving said substrate table between a first position and a second position;during movement of the substrate table between the first position and the second position, deriving a map of a spatial relationship between the substrate and the substrate table by measuring positions of alignment marks on the substrate relative to known positions on the substrate table; andduring said movement, reflecting radiation from said first and second reflective members and deriving therefrom at least one of a shape or orientation of the first and second reflective members relative to each other.

15. A device manufacturing method, comprising: providing a substrate table to support a substrate, said substrate table being provided with first and second reflective members formed on respective lateral sides thereof;moving said substrate table between a first position and a second position;during movement of the substrate table between the first position and the second position, deriving a map of a spatial relationship between the substrate and the substrate table by measuring positions of alignment marks on the substrate relative to known positions on the substrate table;during said movement, reflecting radiation from said first and second reflective members and deriving therefrom at least one of a shape or orientation of the first and second reflective members relative to each other; andusing the derived shape and/or orientation of the first and second reflective members to control movement of the substrate table relative to a projection system in a lithographic apparatus during later exposure of the substrate to a radiation beam patterned by a patterning device and projected by said projection system, the lithographic apparatus being configured to use radiation reflected from said first and second reflector members to monitor and control a position of the substrate table during said exposure.

16. A lithographic apparatus comprising: a substrate table arranged to support a substrate;first and second reflective members formed on respective lateral sides of the substrate table;a substrate table displacement device arranged to move said substrate table between a first position and a second position;a substrate to substrate table alignment device configured to derive during movement of the substrate table between the first and second positions, a map of a spatial relationship between the substrate and the substrate table by measuring positions of alignment marks on the substrate relative to known positions on the substrate table; anda mirror disturbance detector arranged, during said movement, to reflect radiation from said first and second reflective members and derive therefrom at least one of a shape or orientation of the first and second reflective members relative to each other.

17. A method of calibrating a lithographic apparatus, providing a substrate table to support a substrate with first and second substantially planar reflective members formed on lateral sides thereof, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;arranging a first interferometer to reflect light from a localized surface portion of said first reflective member so as to measure a position of said localized surface portion along the first axis;arranging a second interferometer to reflect light from a localized surface portion of said second reflective member so as to measure a position of said localized surface portion along the second axis;arranging said first interferometer to further measure a first localized rotation of said localized portions relative to a third axis that is substantially perpendicular to the first and second axes;arranging said second interferometer to further measure a second localized rotation of said localized portions relative to the third axis; andmoving said substrate table substantially along the first axis by reference to an output of said second interferometer and, during movement of the substrate table, recording a set of measurements of said first and second local effective rotations at different points along said movement so as to derive information about a shape of said second reflective member, wherein during said movement along the first axis said substrate table reaches a speed of at least 0.5 m/s.

18. A method according to claim 17, wherein said recording is carried out only during a constant velocity phase of said movement along the first axis.

19. A method according to claim 17, further comprising: moving said substrate table substantially along the second axis based on an output of said first interferometer and, during movement of the substrate table substantially along the second axis, recording a set of measurements of said first and second local effective rotations at different points along said movement along the second axis in order to derive information about a shape of said first reflective member, wherein during said movement along the second axis said substrate table reaches a speed of at least 0.5 m/s.

20. A method according to claim 19, wherein said recording is carried out only during a constant velocity phase of said movement along the second axis.

21. A method according to claim 19, further comprising: moving said substrate table along a diagonal path oblique to both the first and second axes and, during movement of the substrate table along the diagonal path, recording a set of pairs of measurements of said first and second local effective rotations at different points along said diagonal path so as to derive information about a shape of said first and second reflective members.

22. A device manufacturing method, providing a substrate table configured to support a substrate, the substrate table including first and second substantially planar reflective members formed on lateral sides thereof, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;using a first interferometer to reflect light from a localized surface portion of said first reflective member so as to measure a position of said localized surface portion along the first axis;using a second interferometer to reflect light from a localized surface portion of said second reflective member so as to measure a position of said localized surface portion along the second axis;using said first interferometer to further measure a first localized rotation of said localized portions relative to a third axis that is substantially perpendicular to the first and second axes;using said second interferometer to further measure a second localized rotation of said localized portions relative to the third axis;moving said substrate table substantially along the first axis based on the output of said second interferometer and, during movement of the substrate table substantially along the first axis, recording a set of measurements of said first and second local effective rotations at different points along said movement so as to derive information about a shape of said second reflective member, wherein during said movement along the first axis said substrate table reaches a speed of at least 0.5 m/s; andusing said information about the shape of said first reflective member to control movement of the substrate table relative to a projection system in a lithographic apparatus during later exposure of the substrate to a radiation beam patterned by a patterning device and projected by the projection system from a patterning device, the lithographic apparatus being configured to use radiation reflected from said first and second reflectors to monitor and control a position of the substrate table during said exposure.

23. A lithography apparatus comprising: a substrate table arranged to support a substrate and including first and second substantially planar reflective members formed on lateral sides thereof, said first reflective member being substantially orthogonal to a first axis in a plane of the substrate table and said second reflective member being substantially orthogonal to a second axis in the plane of the substrate table, the first axis being substantially perpendicular to the second axis;a first interferometer configured to reflect light from a localized surface portion of said first reflective member so as to measure a position of said localized surface portion along the first axis;a second interferometer configured to reflect light from a localized surface portion of said second reflective member so as to measure a position of said localized surface portion along the second axis, wherein:said first interferometer is configured to further measure a first localized rotation of said localized portions relative to a third axis that is substantially perpendicular to the first and second axes;said second interferometer is configured to further measure a second localized rotation of said localized portions relative to the third axis; andsaid lithographic apparatus is configured to (a) move said substrate table substantially along the first axis based on an output of said second interferometer and, during movement of the substrate table substantially along the first axis, (b) record a set of measurements of said first and second local effective rotations at different points along said movement in order to derive information about a shape of said second reflective member, wherein during said movement along the first axis said substrate table reaches a speed of at least 0.5 m/s.

24. A lithographic apparatus comprising: a projection system arranged to project a pattern from a patterning device onto a substrate;a substrate table arranged to support a substrate, said substrate table being movable from a measuring station at which a spatial relationship between the substrate and the substrate table is determined and an exposure station at which the pattern from the patterning device is projected onto the substrate;first and second reflective members formed on opposite sides of the substrate table and substantially parallel to each other;a first interferometer arranged to reflect light from said first reflective member so as to measure a position of the substrate table relative to a first axis while the substrate table is at the measuring station; anda second interferometer arranged to reflect light from said second reflective member so as to measure the position of the substrate table relative to the first axis while the substrate table is at the exposure station, whereina plurality of alignment marks are formed in an upper surface of the substrate table in close proximity to the second reflective member and in a known spatial relationship therewith,said lithographic apparatus further comprises a measurement system arranged to measure positions of said alignment marks at the measurement station using said first reflective member and to determine a spatial relationship between the first and second reflective members.

25. A method of calibrating a lithographic apparatus comprising: providing a projection system to project a pattern from a patterning device onto a substrate;providing a substrate table to support a substrate, said substrate table being movable from a measuring station at which a spatial relationship between the substrate and the substrate table is determined and an exposure station at which the pattern from the patterning device is projected onto the substrate;providing first and second reflective members on opposite sides of the substrate table and substantially parallel to each other;providing a first interferometer to reflect light from said first reflective member to measure a position of the substrate table relative to a first axis while the substrate table is at the measuring station;providing a second interferometer to reflect light from said second reflective member to measure the position of the substrate table relative to the first axis while the substrate table is at the exposure station; andproviding a plurality of alignment marks in an upper surface of the substrate table in close proximity to the second reflective member and in a known spatial relationship therewith; andmeasuring positions of said alignment marks using said first reflective member while the substrate table is at the measurement station to thereby determine a spatial relationship between the first and second reflective members.

26. A device manufacturing method, comprising: providing a projection system to project a pattern from a patterning device onto a substrate;providing a substrate table to support a substrate, said substrate table being movable from a measuring station at which a spatial relationship between the substrate and substrate table is determined and an exposure station at which the pattern from the patterning device is projected onto the substrate;providing first and second reflective members on opposite sides of the substrate table and substantially parallel to each other;providing a first interferometer to reflect light from said first reflective member to measure a position of the substrate table relative to a first axis while the substrate table is at the measuring station;providing a second interferometer to reflect light from said second reflective member to measure the position of the substrate table relative to the first axis while the substrate table is at the exposure station; andproviding a plurality of alignment marks in an upper surface of the substrate table in close proximity to the second reflective member and in a known spatial relationship therewith;measuring positions of said alignment marks using said first reflective member while the substrate table is at the measurement station to thereby determine a spatial relationship between the first and second reflective members; andusing the spatial relationship between the first and second reflective members to control movement of the substrate table at the exposure station during later exposure of the substrate.