The present disclosure relates to electroplating apparatus and more particularly to a membrane frame for an electroplating apparatus.
The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
Electroplating may be used to form current carrying lines during processing of semiconductors and/or packaging and multi-chip interconnection. Examples of applications include wafer level processing (WLP) and through silicon via (TSV).
During extended high current electroplating, plating chemical conductivity varies. As a result, plating thickness may vary from center to edge. In other words, plating at the center of the substrate may be thicker than at the edge of the substrate. To reduce the effects of chemical conductivity changes, the anolyte in the anode chamber is periodically chemically refreshed, which increases the cost of the process.
A cell to process a substrate is provided. The cell includes at least one chamber wall, a membrane frame, and a membrane. The at least one chamber wall is arranged to form a cavity below a holder of the substrate. The membrane frame is disposed on the at least one chamber wall and across the cavity. The membrane is supported by the membrane frame and separating a first electrolyte from a second electrolyte. The membrane includes a surface extending from a center of the cavity radially outward at an angle relative to a reference plane, and wherein the angle is greater than or equal to 0° and less than or equal to 3°.
In other features, the cell further includes a high resistance virtual anode plate disposed above the membrane frame. The reference plane extends parallel to a surface of the high resistance virtual anode plate. In other features, the surface of the high resistance virtual anode plate is a top surface or a bottom surface of the high resistance virtual anode plate.
In other features, the reference plane extends in a horizontal direction. In other features, the reference plane extends parallel to a surface of the substrate while the substrate is processed in the cell. In other features, the reference plane extends parallel to a surface of a bottom wall of the cell. The at least one chamber wall includes the bottom wall.
In other features, a portion of the membrane frame at which the membrane is attached is V′-shaped. In other features, the membrane is V′-shaped when supported by the membrane frame. In other features, at least a portion of the membrane is ion permeable.
In other features, the surface is a first surface. The membrane frame includes a second surface. The first surface and the second surface slope inwardly and downwardly at the angle towards a centerline of the cavity.
In other features, the angle is less than or equal to 2°. In other features, the angle is less than or equal to 1°. In other features, the angle is between 1-2°. In other features, the angle is between 2-3°.
In other features, the membrane is an ion permeable membrane separating a first electrolyte disposed on a first side of the membrane from a second electrolyte disposed on a second side of the membrane.
In other features, the membrane frame includes clamps for holding the membrane. In other features, the membrane frame includes a vent for releasing gas from within the cavity. In other features, the cell further includes an electrode disposed in the cavity below the membrane. In other features, the electrode is an anode.
In other features, the cell further includes a high resistance virtual anode plate, a top side insert, a cup, and a cone. The high resistance virtual anode plate is disposed above the membrane frame. The top side insert is disposed above the high resistance virtual anode plate. The cup is disposed above the top side insert. The cone is disposed above the cup. The cup and cone are configured to hold the substrate.
Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.
The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:
In the drawings, reference numbers may be reused to identify similar and/or identical elements.
A membrane frame for an electroplating cell according to the present disclosure compensates for variations in chemical conductivity of the anolyte during extended high current plating. For example, high current copper plating causes the conductivity of the anolyte in the anode chamber to decrease over time. The change in conductivity causes variations in the wafer plating profile. In other words, the plating thickness at the center of the substrate increases (relative to plating at the radially outer portion of the substrate) as the conductivity decreases.
Previous approaches for reducing the center to edge thickness variations include idling the electroplating cell to allow acid back diffusion to correct anode chamber conductivity. However, this approach is too slow for high volume manufacturing using high current plating. Another approach involves chemically refreshing the anolyte in the anode chamber to increase conductivity. This approach is cost prohibitive to the end user.
The membrane frame according to the present disclosure compensates for variations in plating chemical conductivity during extended high current plating. More particularly, surfaces of the membrane frame extend inwardly and downwardly at a predetermined downward angle (greater than 0.5° and less than or equal to 3°, 2° or 1°) relative to horizontal. The predetermined downward angle of the membrane frame helps to provide uniform anode chamber resistance from substrate center to edge as chemical conductivity changes during extended high current plating. The shallow angle of the membrane frame is able to remove trapped air during initial filling of the anode chamber and over the duration of operation.
Referring now to
When loading the substrate 130, the cone 118 is moved upwardly towards the plate 110 and the cup 122 remains stationary. A robot (not shown) loads the substrate 130 between a lower portion of the cone 118 and the radially inwardly projecting portion 145 of the cup 122. The cone 118 is lowered against the seals 140 and 144. As a result, a seal is formed between a radially outer edge of a downwardly facing surface of the substrate 130 and the radially inwardly projecting portion of the cup 122. Likewise, the seal 144 prevents electrolyte from reaching a back side surface of the substrate 130.
Referring now to
The upper portion 248 and the lower portion 244 of the chamber 211 are separated by the membrane 224. A first electrolyte, such as an anolyte is located in the lower portion 244 of the chamber 211 and a second electrolyte, such as a catholyte is located in the upper portion 248 of the chamber 211. As an example, a catholyte may be supplied through inlets 252, into the upper portion 248 of the chamber 211, through vertical holes (not shown) in a plate 260 and into a manifold 261 where the substrate 130 is located. The plate 260 may be implemented as a high resistance virtual anode (HRVA) plate. In other words, the catholyte impinges on the substrate in a transverse direction relative to a plane. A bottom surface 134 of the substrate 130 may be coplanar with and/or parallel to the plane. Catholyte may also be supplied in a direction parallel to the plane and the bottom surface 134 through channel 254 (as shown by dotted lines).
The plate 260 is disposed on the chamber walls 212. A top side insert 262 is disposed on the plate 260 and may include a flow ring (not shown) in
Additional details relating to membranes, electroplating cells and/or substrate holders can be found in commonly-assigned U.S. Patent Publication 2014/0183049, which is hereby incorporated by reference in its entirety.
A plate 330 (e.g., a HRVA plate) is disposed on the membrane frame 301 and includes a top surface 332 and a bottom surface 334. A top side insert 340 is disposed on the plate 330 and may include a flow ring 342. A substrate holder similar to the substrate holder 100 of
The grid 302 has a “V”-shaped cross-sectional profile with opposing members 308A, 308B at high angles relative to a reference plane R. Although the reference plane R is shown intersecting a vertex (or bottom point) V of the membrane frame 301, the reference plane R may be coplanar with and/or extend parallel to a surface of a substrate (e.g., the bottom surface 134 of
A membrane 360 is supported on a bottom of the membrane frame 301. The membrane extends laterally across the membrane frame 301 and is held by clamps 362 of the membrane frame 301. The membrane 360 has a center at the vertex V from which a conical surface 364 (illustrated by portions 364A and 364B) extends radially outwards and upwards. The shown cross-section illustrates angles of the opposing portions 364A, 364B of the conical surface 364. In an embodiment, the angles are the same. The angles are low angles as further described below. The angles ⊖′, ⊖″ of the membrane 360 may be the same as the angles of the members 308A, 308B. The angles ⊖′, ⊖″ may be the same or different.
The members 308A, 308B and the conical surface 364 slope inwardly and downwardly relative to the reference plane R from a radially outer edge of the second cavity 320 at one or more predetermined angles. The conical surface 364 may slope downwardly to a point at the vertex V, which may be along a centerline 321 and/or in a middle of the second cavity 320 and/or corresponding chamber. The centerline 321 may extend through a center of the cell 300, the membrane frame 301 and/or the plate 330.
In certain applications, gas bubbles are produced during electroplating. For example, plating of tin/sliver (SnAg) inert anode systems produce gas bubbles during plating. After testing, it was determined that setting the one or more predetermined angles of the members 308A, 308B and the conical surface 364 to values that are greater than or equal to 7° ensured gas bubble clearance for a wide variety of chemistries. Using this angled arrangement, however, causes variations in plating thickness from center to edge as the conductivity changes.
Referring now to
A plate 530 (e.g., a HRVA plate) is disposed on the membrane frame 501 and includes a top surface 532 and a bottom surface 534. A top side insert 540 is disposed on the plate 530 and may include a flow ring 542. A substrate holder similar to the substrate holder 100 of
The grid 502 has a “V”-shaped cross-sectional profile with opposing members 508A, 508B at low angles relative to a reference plane R. Although the reference plane R is shown intersecting a vertex (or bottom point) V of the membrane frame 501, the reference plane R may be coplanar with and/or extend parallel to a surface of a substrate (e.g., the bottom surface 134 of
A membrane 560 is supported on a bottom of the membrane frame 501. The membrane extends laterally across the membrane frame 501 and is held by clamps 562 of the membrane frame 501. The membrane 560 has a center at the vertex V from which a conical surface 564 (illustrated by portions 564A and 564B) extends radially outwards and upwards. The shown cross-section illustrates angles of the opposing portions 564A, 564B of the conical surface 564. In an embodiment, the angles are the same. The angles are low angles as further described below. The angles ⊖′″, ⊖″″ of the membrane 560 may be the same as the angles of the members 508A, 508B. The angles ⊖′″, ⊖″″ may be the same or different.
The members 508A, 508B and the conical surface 564 slope inwardly and downwardly relative to the reference plane R from a radially outer edge of the second cavity 520 at one or more predetermined angles. The conical surface 564 may slope downwardly to a point at the vertex V, which may be along a centerline 521 and/or in a middle of the second cavity 520 and/or corresponding chamber. The centerline 521 may extend through a center of the cell 500, the membrane frame 501 and/or the plate 530.
The one or more angles of the membrane 520, such as the angles ⊖′″, ⊖″″ may be set to a value that is greater than 0° and less than or equal to 1-3°. In one embodiment, the angles are between 0°-3°. In another embodiment, the angles are between 0°-2°, In yet another embodiment, the angles are between 0°-1°. In another embodiment, the angles are set equal to at least one of 3°, 2°, or 1°. In another embodiment, the angles are all set equal to one of 3°, 2°, or 1°. For example only, the angles may be set to 1°-3° as shown in
The membrane frame 501 as described herein allows uniform anode chamber resistance from center to edge as chemical conductivity changes during extended high current plating. This is because the conical surface 564 of the membrane 560 extends center-to-outer edge at small angles, such that the conical surface 564 is close to being planar and close to extending in a horizontal direction. In other words, the conical surface 564 is slightly conical. The smaller the angles and thus the more planar and/or horizontal extending the conical surface 564, the more uniform the anode chamber resistance laterally across the anode chamber from center to radially outermost edge.
The angles of the membrane 560 as described herein also allow for trapped air removal during initial filling of the second cavity and over the duration of operation. The chamber defined by the membrane frame 301 and the chamber walls 510 includes one or more vents (vents 570 are shown) to allow for gas to escape. Since the bottom surface (or surfaces) of the membrane 560 are at a slight angle, gas is able to move upward and outward towards the vents and be removed from the second cavity 520.
Referring now to
The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and/or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.
Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”
This application claims the benefit of U.S. Provisional Application No. 62/895,245, filed on Sep. 3, 2019. The entire disclosure of the application referenced above is incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/US2020/048972 | 9/2/2020 | WO |
Number | Date | Country | |
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62895245 | Sep 2019 | US |