Claims
- 1. A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface a Si—O—C-in-ring cyclic siloxane precursor wherein said precursor reacts with and deposits on said surface said dielectric film.
- 2. The method as claimed in claim 1 wherein said Si—O—C-in-ring cyclic siloxane compound is selected from the group consisting of 1,3-dioxa-2-silacyclohydrocarbons and 1-oxa-2-silacyclohydrocarbons.
- 3. The method as claimed in claim 2 wherein said 1,3-dioxa-2-silacyclohydrocarbons have the formula (—O—R,—O—)SiR2R3 wherein R1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, R2 and R3 are the same or different, and are selected from the group consisting of H, methyl, vinyl, or other hydrocarbons containing two or more carbon atoms.
- 4. The method as claimed in claim 3 wherein said 1,3-dioxa-2-silacyclohydrocarbon is 1,3-dioxa-2-sila-2,2-dimethyl-cyclopentane.
- 5. The method as claimed in claim 2 wherein said 1-oxa-2-silacyclohydrocarbons have the formula (—R1—O—)SiR2R3, where R1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, one or more than one carbon atom in R1 can be substituted by a silicon atom, R2 and R3 are the same or different, and are selected from the group consisting of H, methyl, vinyl, or other hydrocarbons containing two or more carbon atoms.
- 6. The method as claimed in claim 5 wherein in said formula R1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, and one or more than one carbon atom in R1 can be substituted by one or more than one silicon atom.
- 7. The method as claimed in claim 5 wherein said 1-oxa-2-silacyclohydrocarbon is 2,2-dimethyl- 1 -oxa-2-sila-oxacyclohexane.
- 8. The method as claimed in claim 1 wherein said dielectric film has a k value below 2.5.
- 9. The method as claimed in claim 8 wherein said dielectric film has a k value in the range of about 2.0 to about 2.5.
- 10. The method as claimed in claim 1 wherein said Si—O—C-in-ring cyclic siloxane precursor is deposited on the surface of the semiconductor or integrated circuit using chemical vapor deposition.
- 11. The method as claimed in claim 10 wherein said chemical vapor deposition is pyrolitic or plasma-assisted.
- 12. The method as claimed in claim 10 wherein said precursor is in either the vapor phase or the liquid phase prior to deposition.
- 13. The method as claimed in claim 10 wherein said precursor is a single precursor, thereby not requiring an additional oxidant compound.
- 14. The method as claimed in claim 1 further comprising applying said precursor with an additional oxidant compound.
- 15. The method as claimed in claim 1 wherein said the ratio of opening and retention of the precursor ring structure on said surface can be adjusted during chemical vapor deposition.
Parent Case Info
[0001] This application claims priority from Provisional Patent Application Serial No. 60/239,332 filed Oct. 10, 2000.
Provisional Applications (1)
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Number |
Date |
Country |
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60239332 |
Oct 2000 |
US |