Claims
- 1. A semiconductor device comprising:
- a selected contact region on a face of a semiconductor body,
- an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls,
- a first coating of conformally deposited refractory metal at least on said sidewalls,
- a metal strip composed of copper extending along said face over said insulator and also extending into said contact hole over said first coating,
- and a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
- 2. A device according to claim 1 wherein said semiconductor is silicon, said insulator coating is silicon dioxide, said first coating is molybdenum, and said metal of said first coating is interposed between said metal strip and said silicon dioxide.
- 3. A device according to claim 1 wherein a barrier layer is interposed between said first coating and said region in said face.
- 4. A device according to claim 3 wherein said barrier layer is a refractoy metal silicide.
- 5. A device according to claim 1 wherein said first coating extends along said face between said metal strip and said insulator, whereby the metal strip is totally encased in said first and second coatings.
- 6. A semiconductor device comprising:
- a selected contact region in a face of a semiconductor body;
- an insulator coating on said face having a contact hole over said region, said contact hole having substantially vertical sidewalls;
- a plug of conductive material substantially filling said contact hole;
- a first coating of conformally deposited refractory metal at least contacting and covering said plug;
- a metal strip composed of copper extending along said face over said insulator and also extending over and contacting said first coating; and
- a second coating of conformally deposited refractory metal covering the top and sidewalls of said metal strip.
Parent Case Info
This is a division of application Ser. No. 732,547, filed May 10, 1985, now U.S. Pat. No. 4,742,014.
US Referenced Citations (13)
Divisions (1)
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Number |
Date |
Country |
Parent |
732547 |
May 1985 |
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