The present invention relates to an improved component for a plasma processing system and, more particularly, to an optical window deposition shield employed in a plasma processing system to provide optical access to a process space through a deposition shield.
The fabrication of integrated circuits (IC) in the semiconductor industry typically employs plasma to create and assist surface chemistry within a plasma reactor necessary to remove material from and deposit material to a substrate. In general, plasma is formed within the plasma reactor under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas. Moreover, the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the chamber (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
Although the formation of a population of charged species (ions, etc.) and chemically reactive species is necessary for performing the function of the plasma processing system (i.e. material etch, material deposition, etc.) at the substrate surface, other component surfaces on the interior of the processing chamber are exposed to the physically and chemically active plasma and, in time, can erode. The erosion of exposed components in the plasma processing system can lead to a gradual degradation of the plasma processing performance and ultimately to complete failure of the system.
In order to minimize the damage sustained by exposure to the processing plasma, components of the plasma processing system, known to sustain exposure to the processing plasma, are coated with a protective barrier. For example, components fabricated from aluminum can be anodized to produce a surface layer of aluminum oxide, which is more resistant to the plasma. In another example, a consumable or replaceable component, such as one fabricated from silicon, quartz, alumina, carbon, or silicon carbide, can be inserted within the processing chamber to protect the surfaces of more valuable components that would impose greater costs during frequent replacement. Furthermore, it is desirable to select surface materials that minimize the introduction of unwanted contaminants, impurities, etc. to the processing plasma and possibly to the devices formed on the substrate.
In both cases, the inevitable failure of the protective coating, either due to the integrity of the protective barrier or the integrity of the fabrication of the protective barrier, and the consumable nature of the replaceable components demands frequent maintenance of the plasma processing system. This frequent maintenance can produce costs associated with plasma processing down-time and new plasma processing chamber components, which can be excessive.
The present invention provides an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously addresses the above-identified shortcomings.
It is an object of the present invention to provide an optical window deposition shield comprising a plug configured to extend through an opening formed in the deposition shield, a flange coupled to the plug and configured to attach the optical window deposition shield to the deposition shield. The plug comprises a frontal surface and a perimeter surface coupled thereto. The flange comprises a first surface, a second surface, and an edge surface, wherein the first surface further comprises a mating surface.
It is another object of the present invention that the optical window deposition shield comprises at least one optical through-hole coupled to the frontal surface of the plug and the second surface of the flange and configured to permit the passage of light, wherein such an optical through-hole can comprise an exposed entrant surface coupled to the frontal surface of the plug, and an interior through-hole surface coupled to the exposed entrant surface and to the second surface of the flange.
It is another object of the present invention that the optical window deposition shield comprises a plurality of fastening receptors coupled to the mating surface of the first surface of the flange and the second surface of the flange and configured to receive fastening devices, wherein each fastening receptor can comprise an entrant region, a through-hole region, an exit through-hole, an interior fastener surface, and a recessed fastener surface.
It is another object of the present invention that the optical window deposition shield further comprises a protective barrier formed on a plurality of exposed surfaces of the optical window deposition shield exposed to the processing plasma.
It is a further object of the present invention that the exposed surfaces of the deposition shield comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole.
The present invention further provides a method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; anodizing the optical window deposition shield to form a surface anodization layer on the optical window deposition shield; machining the exposed surfaces on the optical window deposition shield to remove the surface anodization layer; and forming a protective barrier on the exposed surfaces.
The present invention provides another method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; masking the exposed surfaces on the optical window deposition shield to prevent formation of a surface anodization layer; anodizing the optical window deposition shield to form the surface anodization layer on the optical window deposition shield; unmasking the exposed surfaces; and forming a protective barrier on the exposed surfaces.
The present invention provides another method of producing the optical window deposition shield in the plasma processing system comprising the steps: fabricating the optical window deposition shield; and forming a protective barrier on exposed surfaces.
The present invention also includes another method that combines masking portions of the exposed surfaces before anodization and leaving other portions of the exposed surfaces unmasked; anodizing the unmasked surfaces; machining the portions of the exposed surfaces that were unmasked and which were anodized; unmasking the masked portions of the exposed surfaces; and forming a protective barrier on the exposed surfaces.
Any of the above methods may also optionally include machining anodized (or otherwise coated) surfaces that are not exposed surfaces (e.g., to obtain a bare metal connection where the machined surface will mate with another part).
It is another object of the present invention that the optical window deposition shield serves as an insert, wherein the insert comprises no optical through-holes and can be produced using any of the above methods.
These and other advantages of the invention will become more apparent and more readily appreciated from the following detailed description of the exemplary embodiments of the invention taken in conjunction with the accompanying drawings, where:
The present invention provides an improved optical window deposition shield for a plasma processing system to provide optical access to a process space through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously addresses known shortcomings.
According to an embodiment of the present invention, a plasma processing system 1 is depicted in
In the illustrated embodiment, upper assembly 20 can comprise at least one of a cover, a gas injection assembly, and an upper electrode impedance match network. For example, the electrode plate 24 can be coupled to an RF source. In another alternate embodiment, the upper assembly 20 comprises a cover and an electrode plate 24, wherein the electrode plate 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10. For example, the plasma processing chamber 10, the upper assembly 20, and the electrode plate 24 can be electrically connected to ground potential.
Plasma processing chamber 10 can, for example, further comprise a deposition shield 14 for protecting the plasma processing chamber 10 from the processing plasma in the process space 12, and an optical viewport 16. Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple optical window 17 to the optical window deposition shield 18. Sealing members, such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18, and between the optical window deposition shield 18 and the plasma processing chamber 10. Optical viewport 16 can, for example, permit monitoring of optical emission from the processing plasma in process space 12.
Substrate holder 30 can, for example, further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10. Additionally, a bellows shield 54 can, for example, be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma. Substrate holder 10 can, for example, further be coupled to at least one of a focus ring 60, and a shield ring 62. Furthermore, a baffle plate 64 can extend about a periphery of the substrate holder 30.
Substrate 35 can be, for example, transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and chamber feed-through (not shown) via robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30.
Substrate 35 can be, for example, affixed to the substrate holder 30 via an electrostatic clamping system. Furthermore, substrate holder 30 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system. Moreover, gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30. Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures. In other embodiments, heating elements, such as resistive heating elements, or thermoelectric heaters/coolers can be included.
In the illustrated embodiment, shown in
Alternately, the processing plasma formed in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and with and without DC magnet systems. Alternately, the processing plasma in process space 12 can be formed using electron cyclotron resonance (ECR). In yet another embodiment, the processing plasma in process space 12 is formed from the launching of a Helicon wave. In yet another embodiment, the processing plasma in process space 12 is formed from a propagating surface wave.
Referring now to an illustrated embodiment of the present invention depicted in
With continuing reference to
In an alternate embodiment, the optical window deposition shield 18 comprises no optical through-holes. In the illustrated embodiment as shown in
Referring to FIGS. 2A,B and 3A,B, flange 82 can, for example, further comprise a plurality of fastening receptors 100, each fastening receptor 100 coupled to the first surface 88 and the second surface 90 of the flange 82, and configured to receive fastening devices (not shown) (such as bolts) to couple optical window deposition shield 18 to deposition shield 14. The fastening receptors 100 can comprise an entrant region 102, a through-hole region 104, an exit through-hole 106, an interior fastener surface 108, and a recessed fastener surface 109. Furthermore, a portion of the first surface 88 of flange 82 can comprise a mating surface 110 configured to couple to a mating surface of the deposition shield 14 (
Referring now to
In an embodiment of the present invention, the protective barrier 150 can comprise a compound including an oxide of aluminum such as Al2O3. In another embodiment of the present invention, the protective barrier 150 can comprise a mixture of Al2O3 and Y2O3. In another embodiment of the present invention, the protective barrier 150 can comprise at least one of a III-column element (i.e., column III of the periodic table) and a Lanthanon element. In another embodiment of the present invention, the III-column element can comprise at least one of Yttrium, Scandium, and Lanthanum. In another embodiment of the present invention, the Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium. In another embodiment of the present invention, the compound forming protective barrier 150 can comprise at least one of Yttria (Y2O3), Sc2O3, Sc2F3, YF3, La2O3, CeO2, Eu2O3, and DyO3.
In an embodiment of the present invention, the protective barrier 150 formed on optical window deposition shield 18 can comprise a minimum thickness, wherein the minimum thickness can be specified as constant across at least one of the exposed surfaces 145. In another embodiment, the minimum thickness can be variable across the exposed surfaces 145. Alternately, the minimum thickness can be constant over a first portion of an exposed surface and variable over a second portion of an exposed surface. For example, a variable thickness can occur on a curved surface, on a corner, or in a hole. For example, the minimum thickness can range from 0.5 micron to 500 micron. Desirably, the minimum thickness can range from 5 micron to 200 micron, and, preferably, the minimum thickness is at least 5 micron.
In 320, the optical window deposition shield 18 is anodized to form a surface anodization layer. For example, when fabricating the optical window deposition shield 18 from aluminum, the surface anodization layer comprises aluminum oxide (Al2O3). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
In 330, exposed surfaces 145 on the anodized optical window deposition shield 18 are identified, and the surface anodization layer is removed from the exposed surfaces 145 using standard machining techniques. In an embodiment of the present invention, the exposed surfaces comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole.
In 340, the protective barrier 150 (as described above) is formed on the exposed surfaces 145 identified in 330. A protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings. In an alternate embodiment, forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating. For example, polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
In 420, exposed surfaces 145 of the optical window deposition shield 18 are masked to prevent the formation of a surface anodization layer thereon. In an embodiment of the present invention, the exposed surfaces 145 comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole. Techniques for surface masking and unmasking are well known to those skilled in the art of surface coatings and surface anodization.
In 430, the optical window deposition shield 18 is anodized to form a surface anodization layer on the remaining unmasked surfaces. For example, when fabricating the optical window deposition shield 18 from aluminum, the surface anodization layer can comprise aluminum oxide (Al2O3). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
In 440, the exposed surfaces 145 are unmasked, and a protective barrier 150 (as described above) is formed on the exposed surfaces 145. A protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings. In an alternate embodiment, forming the protective barrier 150 can further comprise polishing (or smoothing) the thermal spray coating. For example, polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
In 520, a protective barrier 150 (as described above) is formed on exposed surfaces 145 of the optical window deposition shield 18. In an embodiment of the present invention, the exposed surfaces comprise the frontal surface of the plug, the perimeter surface of the plug, the first surface of the flange excluding the mating surface, and the exposed entrant surface of the at least one optical through-hole. In another embodiment of the present invention, the exposed surfaces comprise all surfaces on the optical window deposition shield 18. A protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings. In an alternate embodiment, forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating. For example, polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
The present invention also includes another method that combines masking portions of the exposed surfaces before anodization and leaving other portions of the exposed surfaces unmasked; anodizing the unmasked surfaces; machining the portions of the exposed surfaces that were unmasked and which were anodized; unmasking the masked portions of the exposed surfaces; and forming a protective barrier on the exposed surfaces.
Any of the above methods may also optionally include machining anodized (or otherwise coated) surfaces that are not exposed surfaces (e.g., to obtain a bare metal connection where the machined surface will mate with another part).
Although only certain exemplary embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention.
This application is a divisional of and claims priority to U.S. patent application Ser. No. 10/259,352, filed Sep. 30, 2002, which is related to co-pending U.S. patent application Ser. No. 10/259,858, entitled “Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system”, filed on Sep. 30, 2002; co-pending U.S. patent application Ser. No. 10/259,382, entitled “Method and apparatus for an improved baffle plate in a plasma processing system”, filed on Sep. 30, 2002; co-pending U.S. patent application Ser. No. 10/259,380, entitled “Method and apparatus for an improved baffle plate in a plasma processing system”, filed on Sep. 30, 2002; co-pending U.S. patent application Ser. No. 10/259,353, entitled “Method and apparatus for an improved deposition shield in a plasma processing system”, filed on Sep. 30, 2002; co-pending U.S. patent application ser. No. 10/259,757, entitled “Method and apparatus for an improved upper electrode plate in a plasma processing system”, filed on Sep. 30, 2002; and co-pending U.S. patent application Ser. No. 10/259,306, entitled “Method and apparatus for an improved bellows shield in a plasma processing system”, filed on Sep. 30, 2002. The entire contents of all of those applications are herein incorporated by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
4310390 | Bradley et al. | Jan 1982 | A |
4357387 | George et al. | Nov 1982 | A |
4469619 | Ohno et al. | Sep 1984 | A |
4593007 | Novinski | Jun 1986 | A |
4612077 | Tracy et al. | Sep 1986 | A |
4649858 | Sakai et al. | Mar 1987 | A |
4842683 | Cheng et al. | Jun 1989 | A |
4877757 | York et al. | Oct 1989 | A |
5000113 | Wang et al. | Mar 1991 | A |
5074456 | Degner et al. | Dec 1991 | A |
5334462 | Vine et al. | Aug 1994 | A |
5362335 | Rungta | Nov 1994 | A |
5366585 | Robertson et al. | Nov 1994 | A |
5367838 | Visaisouk et al. | Nov 1994 | A |
5423936 | Tomita et al. | Jun 1995 | A |
5426310 | Tamada et al. | Jun 1995 | A |
5484752 | Waku et al. | Jan 1996 | A |
5494713 | Ootuki | Feb 1996 | A |
5521790 | Ruckel et al. | May 1996 | A |
5551190 | Yamagishi et al. | Sep 1996 | A |
5556501 | Collins et al. | Sep 1996 | A |
5614055 | Fairbairn et al. | Mar 1997 | A |
5637237 | Oehrlein et al. | Jun 1997 | A |
5641375 | Nitescu et al. | Jun 1997 | A |
5651723 | Bjornard et al. | Jul 1997 | A |
5680013 | Dornfest et al. | Oct 1997 | A |
5725960 | Konishi et al. | Mar 1998 | A |
5759360 | Ngan et al. | Jun 1998 | A |
5798016 | Oehrlein et al. | Aug 1998 | A |
5834070 | Movchan et al. | Nov 1998 | A |
5851343 | Hsu et al. | Dec 1998 | A |
5868848 | Tsukamoto | Feb 1999 | A |
5879575 | Tepman et al. | Mar 1999 | A |
5885356 | Zhao et al. | Mar 1999 | A |
5885402 | Esquibel | Mar 1999 | A |
5891253 | Wong et al. | Apr 1999 | A |
5892278 | Horita | Apr 1999 | A |
5894887 | Kelsey et al. | Apr 1999 | A |
5895586 | Kaji et al. | Apr 1999 | A |
5900064 | Kholodenko | May 1999 | A |
5902763 | Waku et al. | May 1999 | A |
5911852 | Katayama et al. | Jun 1999 | A |
5919332 | Koshiishi et al. | Jul 1999 | A |
5925228 | Panitz | Jul 1999 | A |
5944902 | Redeker et al. | Aug 1999 | A |
5948521 | Dlugosch et al. | Sep 1999 | A |
5952054 | Sato et al. | Sep 1999 | A |
5952060 | Ravi | Sep 1999 | A |
5955182 | Yasuda et al. | Sep 1999 | A |
5968377 | Yuasa et al. | Oct 1999 | A |
5985102 | Leiphart | Nov 1999 | A |
5994662 | Murugesh | Nov 1999 | A |
6068729 | Shrotriya | May 2000 | A |
6073449 | Watanabe et al. | Jun 2000 | A |
6096161 | Kim et al. | Aug 2000 | A |
6106625 | Koai et al. | Aug 2000 | A |
6110287 | Arai et al. | Aug 2000 | A |
6120640 | Shih et al. | Sep 2000 | A |
6120955 | Tokutake et al. | Sep 2000 | A |
6123791 | Han et al. | Sep 2000 | A |
6123804 | Babassi et al. | Sep 2000 | A |
6129808 | Wicker et al. | Oct 2000 | A |
6139983 | Ohashi et al. | Oct 2000 | A |
6143646 | Wetzel | Nov 2000 | A |
6170429 | Schoepp et al. | Jan 2001 | B1 |
6176969 | Park et al. | Jan 2001 | B1 |
6182603 | Shang et al. | Feb 2001 | B1 |
6210486 | Mizukami et al. | Apr 2001 | B1 |
6221202 | Walko, II | Apr 2001 | B1 |
6246479 | Jung et al. | Jun 2001 | B1 |
6264788 | Tomoyasu et al. | Jul 2001 | B1 |
6265757 | Brady et al. | Jul 2001 | B1 |
6266133 | Miyajima et al. | Jul 2001 | B1 |
6296740 | Xie et al. | Oct 2001 | B1 |
6335293 | Luo et al. | Jan 2002 | B1 |
6364949 | Or et al. | Apr 2002 | B1 |
6368987 | Kopacz et al. | Apr 2002 | B1 |
6373573 | Jung et al. | Apr 2002 | B1 |
6383333 | Haino et al. | May 2002 | B1 |
6383964 | Nakahara et al. | May 2002 | B1 |
6394026 | Wicker et al. | May 2002 | B1 |
6413578 | Stowell et al. | Jul 2002 | B1 |
6444083 | Steger et al. | Sep 2002 | B1 |
6514377 | Morimoto | Feb 2003 | B1 |
6519037 | Jung et al. | Feb 2003 | B1 |
6527911 | Yen et al. | Mar 2003 | B1 |
6533910 | O'Donnell et al. | Mar 2003 | B1 |
6537429 | O'Donnell et al. | Mar 2003 | B1 |
6544380 | Tomoyasu et al. | Apr 2003 | B1 |
6554906 | Kuibira et al. | Apr 2003 | B1 |
6562186 | Saito et al. | May 2003 | B1 |
6570654 | Jung et al. | May 2003 | B1 |
6583064 | Wicker et al. | Jun 2003 | B1 |
6590660 | Jung et al. | Jul 2003 | B1 |
6613204 | Xie et al. | Sep 2003 | B1 |
6613442 | O'Donnell et al. | Sep 2003 | B1 |
6641697 | Han et al. | Nov 2003 | B1 |
6663714 | Mizuno et al. | Dec 2003 | B1 |
6695929 | Kanekiyo et al. | Feb 2004 | B1 |
6726801 | Ahn | Apr 2004 | B1 |
6733620 | Sugiyama et al. | May 2004 | B1 |
6738862 | Ross et al. | May 2004 | B1 |
6776873 | Sun et al. | Aug 2004 | B1 |
6783863 | Harada et al. | Aug 2004 | B1 |
6783875 | Yamada et al. | Aug 2004 | B1 |
6798519 | Nishimoto et al. | Sep 2004 | B1 |
6805952 | Chang et al. | Oct 2004 | B1 |
6806949 | Ludviksson et al. | Oct 2004 | B1 |
6811651 | Long | Nov 2004 | B1 |
6830622 | O'Donnell et al. | Dec 2004 | B1 |
6833279 | Choi | Dec 2004 | B1 |
6837966 | Nishimoto et al. | Jan 2005 | B1 |
6852433 | Maeda | Feb 2005 | B1 |
6863594 | Preising | Mar 2005 | B1 |
6875477 | Trickett et al. | Apr 2005 | B1 |
6884516 | Harada et al. | Apr 2005 | B1 |
6894769 | Ludviksson et al. | May 2005 | B1 |
6896785 | Shatrov et al. | May 2005 | B1 |
20010003271 | Otsuki | Jun 2001 | A1 |
20010050144 | Nishikawa et al. | Dec 2001 | A1 |
20020076508 | Chiang et al. | Jun 2002 | A1 |
20020086118 | Chang et al. | Jul 2002 | A1 |
20020086501 | O'Donnell et al. | Jul 2002 | A1 |
20020086545 | O'Donnell et al. | Jul 2002 | A1 |
20020086553 | O'Donnell et al. | Jul 2002 | A1 |
20020090464 | Jiang et al. | Jul 2002 | A1 |
20020142611 | O'Donnell et al. | Oct 2002 | A1 |
20020177001 | Harada et al. | Nov 2002 | A1 |
20030010446 | Kajiyama et al. | Jan 2003 | A1 |
20030029563 | Kaushal et al. | Feb 2003 | A1 |
20030084848 | Long | May 2003 | A1 |
20030113479 | Fakuda et al. | Jun 2003 | A1 |
20030150419 | Daragheh et al. | Aug 2003 | A1 |
20030200929 | Otsuki | Oct 2003 | A1 |
20040026372 | Takenaka et al. | Feb 2004 | A1 |
20040035364 | Tomoyoshi et al. | Feb 2004 | A1 |
20040050495 | Sumiya et al. | Mar 2004 | A1 |
20040060516 | Nishimoto et al. | Apr 2004 | A1 |
20040060656 | Saigusa et al. | Apr 2004 | A1 |
20040060657 | Saigusa et al. | Apr 2004 | A1 |
20040060658 | Nishimoto et al. | Apr 2004 | A1 |
20040060661 | Nishimoto et al. | Apr 2004 | A1 |
20040060779 | Kreger | Apr 2004 | A1 |
20040061447 | Saigusa et al. | Apr 2004 | A1 |
20040063333 | Saigusa et al. | Apr 2004 | A1 |
20040072426 | Jung | Apr 2004 | A1 |
20040081746 | Imafuku | Apr 2004 | A1 |
20040083970 | Imafuku et al. | May 2004 | A1 |
20040125359 | Lidviksson et al. | Jul 2004 | A1 |
20040168640 | Muto et al. | Sep 2004 | A1 |
20040173155 | Nishimoto et al. | Sep 2004 | A1 |
20040216667 | Mitsuhashi et al. | Nov 2004 | A1 |
20050103268 | Nishimoto et al. | May 2005 | A1 |
20050103275 | Sasaki et al. | May 2005 | A1 |
20050150866 | O'Donnell | Jul 2005 | A1 |
20060134919 | Hamelin et al. | Jun 2006 | A1 |
Number | Date | Country |
---|---|---|
94 21 671 | Jul 1996 | DE |
0 508 731 | Oct 1992 | EP |
0 573 057 | Dec 1993 | EP |
0 814 495 | Jun 1997 | EP |
0 799 904 | Oct 1997 | EP |
0 814 495 | Dec 1997 | EP |
0 841 838 | May 1998 | EP |
1 069 603 | Jan 2001 | EP |
1 081 749 | Mar 2001 | EP |
1 081 749 | Jul 2001 | EP |
1 156 130 | Nov 2001 | EP |
2 252 567 | Aug 1992 | GB |
61-207566 | Sep 1986 | JP |
64-039728 | Feb 1989 | JP |
1-312087 | Dec 1989 | JP |
01-312087 | Dec 1989 | JP |
02-267967 | Nov 1990 | JP |
03-115535 | May 1991 | JP |
04-238882 | Aug 1992 | JP |
4-238882 | Aug 1992 | JP |
05-070922 | Mar 1993 | JP |
05-117064 | May 1993 | JP |
05-121360 | May 1993 | JP |
05-198532 | Aug 1993 | JP |
05-238859 | Sep 1993 | JP |
06-057396 | Mar 1994 | JP |
60-057396 | Mar 1994 | JP |
06-136505 | May 1994 | JP |
06-142822 | May 1994 | JP |
60-136505 | May 1994 | JP |
60-142822 | May 1994 | JP |
06-256926 | Sep 1994 | JP |
07-058013 | Mar 1995 | JP |
07-126827 | May 1995 | JP |
07-176524 | Jul 1995 | JP |
07-226378 | Aug 1995 | JP |
07-245295 | Sep 1995 | JP |
08-037180 | Feb 1996 | JP |
08-041309 | Feb 1996 | JP |
08-081777 | Mar 1996 | JP |
08-268751 | Oct 1996 | JP |
08-339895 | Dec 1996 | JP |
09-069554 | Mar 1997 | JP |
09-272987 | Oct 1997 | JP |
10-004083 | Jan 1998 | JP |
10-045461 | Feb 1998 | JP |
10-045467 | Feb 1998 | JP |
10-130884 | May 1998 | JP |
10-214819 | Aug 1998 | JP |
10-251871 | Sep 1998 | JP |
11-080925 | Mar 1999 | JP |
11-207161 | Aug 1999 | JP |
11-233292 | Aug 1999 | JP |
11-312646 | Nov 1999 | JP |
2000-124197 | Apr 2000 | JP |
WO 000013219 | Sep 2000 | JP |
2000-303180 | Oct 2000 | JP |
2001-031484 | Feb 2001 | JP |
2001-152307 | Jun 2001 | JP |
2001-164354 | Jun 2001 | JP |
2001-226773 | Aug 2001 | JP |
2002-151473 | May 2002 | JP |
1998-063542 | Oct 1998 | KR |
1999-008142 | Jan 1999 | KR |
2002-0027373 | Apr 2002 | KR |
102004-0007601 | Jan 2004 | KR |
9950886 | Oct 1999 | WO |
WO 9950886 | Oct 1999 | WO |
0142526 | Jun 2001 | WO |
WO 0142526 | Jun 2001 | WO |
0239495 | May 2002 | WO |
WO 0239495 | May 2002 | WO |
0248421 | Jun 2002 | WO |
WO 0248421 | Jun 2002 | WO |
WO 2004030011 | Apr 2004 | WO |
WO 2004030012 | Apr 2004 | WO |
WO 2004030013 | Apr 2004 | WO |
WO 2004030014 | Apr 2004 | WO |
WO 2004030015 | Apr 2004 | WO |
WO 2004030020 | Apr 2004 | WO |
WO 2004030426 | Apr 2004 | WO |
WO 2004095530 | Nov 2004 | WO |
WO 2004095532 | Nov 2004 | WO |
Number | Date | Country | |
---|---|---|---|
20040173155 A1 | Sep 2004 | US |
Number | Date | Country | |
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Parent | 10259352 | Sep 2002 | US |
Child | 10803994 | US |