In the fabrication of semiconductor devices such as integrated circuits, memory cells, and the like, a series of manufacturing operations are performed to define features on semiconductor wafers (“wafers”). The wafers include integrated circuit devices in the form of multi-level structures defined on a silicon substrate. At a substrate level, transistor devices with diffusion regions are formed. In subsequent levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define a desired integrated circuit device. Also, patterned conductive layers are insulated from other conductive layers by dielectric materials.
During the series of manufacturing operations, the wafer surface is exposed to various types of contaminants. Essentially any material present in a manufacturing operation is a potential source of contamination. For example, sources of contamination may include process gases, chemicals, deposition materials, and liquids, among others. The various contaminants may deposit on the wafer surface in particulate form. If the particulate contamination is not removed, the devices within the vicinity of the contamination will likely be inoperable. Thus, it is necessary to clean contamination from the wafer surface in a substantially complete manner without damaging the features defined on the wafer. However, the size of particulate contamination is often on the order of the critical dimension size of features fabricated on the wafer. Removal of such small particulate contamination without adversely affecting the features on the wafer can be quite difficult.
Conventional wafer cleaning methods have relied heavily on mechanical force to remove particulate contamination from the wafer surface. As feature sizes continue to decrease and become more fragile, the probability of feature damage due to application of mechanical force to the wafer surface increases. For example, features having high aspect ratios are vulnerable to toppling or breaking when impacted by a sufficient mechanical force. To further complicate the cleaning problem, the move toward reduced feature sizes also causes a reduction in the size of particulate contamination. Particulate contamination of sufficiently small size can find its way into difficult to reach areas on the wafer surface, such as in a trench surrounded by high aspect ratio features. Thus, efficient and non-damaging removal of contaminants during modern semiconductor fabrication represents a continuing challenge to be met by continuing advances in wafer cleaning technology. It should be appreciated that the manufacturing operations for flat panel displays suffer from the same shortcomings of the integrated circuit manufacturing discussed above.
In view of the forgoing, there is a need for a more effective and less abrasive cleaning material and method for cleaning wafer surfaces.
Broadly speaking, the present invention fills these needs by providing improved methods and materials for cleaning wafer surfaces. It should be appreciated that the present invention can be implemented in numerous ways, including as an apparatus, a method and a system. Several inventive embodiments of the present invention are described below.
In one embodiment, a method for cleaning is disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body off of the substrate.
In another embodiment, a cleaning material for preparing a substrate is disclosed. The cleaning material has a liquid component, a solid component, and a gas component. The solid component is defined a plurality of solids that are dispersed within the liquid component. The gas component is intermixed with the liquid component and the solid component to define the cleaning material in a state that is applied to the substrate.
In still another embodiment, another cleaning method is disclosed. A substrate is provided, wherein the substrate has a particle deposited thereon. A tri-state body that is defined by a surfactant in a substantial solid phase, a liquid portion in a liquid phase, and a gas portion in a gas phase is generated prior to the application to the substrate. The tri-state body is applied to the surface of the substrate in such a manner that the surfactant interacts with the particle on the substrate surface. The tri-state body is then removed from the surface of the substrate, where the interaction between the surfactant and the particle causes the particle to be removed along with the tri-state body.
The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, and like reference numerals designate like structural elements.
An invention is described for methods and materials for cleaning wafer surfaces. It will be obvious, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.
As used herein, a tri-state body cleaning material contains a plurality of tri-state bodies that include a gas phase, a liquid phase and a solid phase. In one embodiment, the gas phase and liquid phase provides an intermediary to bring the solid phase into close proximity with contaminant particles 102 on a substrate surface. For further explanation of the composition of the tri-state body cleaning material and its mechanisms see U.S. patent application Ser. No. 11/346,894, filed on Feb. 3, 2006, entitled “Method for removing contamination from a substrate and for making a cleaning solution,” U.S. patent application Ser. No. 11/347,154, filed on Feb. 3, 2006, entitled “Cleaning compound and method and system for using the cleaning compound” and U.S. patent application Ser. No. 11/336,215, filed on Jan. 20, 2006, entitled “Method and Apparatus for removing contamination from a substrate.” The solid phase interacts with the particles 102 during cleaning to effectuate their removal. A substrate, as an example used herein, denotes without limitation, semiconductor wafers, hard drive disks, optical discs, glass substrates, and flat panel display surfaces, liquid crystal display surfaces, etc., which may become contaminated during manufacturing or handling operations. Depending on the actual substrate, a surface may become contaminated in different ways, and the acceptable level of contamination is defined in the particular industry in which the substrate is handled.
As depicted in
In one embodiment, the gas portion 104 is defined to occupy 5% to 99.9% of the tri-state body 110 cleaning material by volume. The gas or gases defining the gas portion 104 can be either inert, e.g., nitrogen (N2), argon (Ar), etc., or reactive, e.g., oxygen (O2), ozone (O3), hydrogen peroxide (H2O2), air, hydrogen (H2), ammonia (NH3), hydrogen fluoride (HF), hydrochloric acid (HCl), etc. In one embodiment, the gas portion 104 includes only a single type of gas, for example, nitrogen (N2). In another embodiment, the gas portion 104 is a gas mixture that includes mixtures of various types of gases, such as: ozone (O3), oxygen (O2), carbon dioxide (CO2), hydrochloric acid (HCl), hydrofluoric acid (HF), nitrogen (N2), and argon (Ar); ozone (O3) and nitrogen (N2); ozone (O3) and argon (Ar); ozone (O3), oxygen (O2) and nitrogen (N2); ozone (O3), oxygen (O2) and argon (Ar); ozone (O3), oxygen (O2), nitrogen (N2), and argon (Ar); and oxygen (O2), argon (Ar), and nitrogen (N2). It should be appreciated that the gas portion 104 can include essentially any combination of gas types as long as the resulting gas mixture can be combined with a liquid portion 106 and a solid portion 108 to form a tri-state body 110 that can be utilized in substrate 112 cleaning or preparation operations.
Still with
In one embodiment, the solid portion 108 avoids dissolution into the liquid portion 106 and gas portions 104 and has a surface functionality that enables dispersion throughout the liquid portion 106. In another embodiment, the solid portions 108 does not have surface functionality that enables dispersion throughout the liquid portion 106, therefore requiring chemical dispersants to be added to the liquid portion 106 to before the solid portions 108 can be dispersed through the liquid portion 106. In one embodiment, the solid portions 108 form through a precipitation reaction where a dissolved component in the liquid phase 106 reacts by the addition of one or more components to form an insoluble compound. In one embodiment, the solid portion 108 goes into suspension in the liquid portion 106 when a base is added to the liquid portion 106 (i.e., by altering the zeta potential). Depending on their specific chemical characteristics and their interaction with the surrounding liquid portion 106, the solid portion 108 may take one or more of several different forms.
For example, in various embodiments the solid portion 108 may form aggregates, colloids, gels, coalesced spheres, or essentially any other type of agglutination, coagulation, flocculation, agglomeration, or coalescence. It should be appreciated that the exemplary list of solid portion 108 forms identified above is not intended to represent an inclusive list, and alternates or extensions falling within the spirit of the disclosed embodiments are possible. It should further be understood that the solid portion 108 can be defined as essentially any solid material capable of functioning in the manner previously described with respect to their interaction with the substrate 112 and the contaminant particle 102.
Continuing with
The aliphatic acids represent essentially any acid defined by organic compounds in which carbon atoms form open chains. A fatty acid is an example of an aliphatic acid that can be used as the solid portion 108 within the tri-state body 110 cleaning material. Examples of fatty acids that may be used as the solid portion 108 include lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linolenic acid, arachidonic acid, gadoleic acid, eurcic acid, butyric acid, caproic acid, caprylic acid, myristic acid, margaric acid, behenic acid, lignoseric acid, myristoleic acid, palmitoleic acid, nervanic acid, parinaric acid, timnodonic acid, brassic acid, clupanodonic acid, lignoceric acid, cerotic acid, and mixtures thereof, among others. In one embodiment, the solid portion 108 can represent a mixture of fatty acids defined by various carbon chain lengths extending from C-1 to about C-26. Carboxylic acids are defined by essentially any organic acid that includes one or more carboxyl groups (COOH). When used as the solid portion 108 of a tri-state body 110, the carboxylic acids can include mixtures of various carbon chain lengths extending from C-1 through about C-100. Also, the carboxylic acids can include long-chain alcohols, ethers, and/or ketones, above the solubility limit in the liquid portion 106 of the tri-state body 110. In one embodiment, the fatty acid used in the solid portion 108 acts as a surfactant when coming into contact with the contaminant particle 102.
Still referring to
In one embodiment, a pressure (i.e., force) exerted by a fluid causes the first tri-state body 110 to apply a force against the second tri-state body 110. It should be appreciated that the fluid can be either a liquid or a gas as long as the fluid can be utilized to apply a pressure against the tri-state bodies 110 (i.e., deformable droplets and bubbles) and does not appreciably dissolve into the gas portion 104, liquid portion 106, and solid portion 108 of the tri-state bodies 110. In another embodiment, tri-state bodies 110 adjacent to and in contact with the first tri-state body 110 applies a force against the first tri-state body 110 cascading into the second tri-state body 110 and applying a force against the second tri-state body 110.
In one embodiment, the tri-state body cleaning material 302 is generated using an applicator prior to application to the substrate 112. The applicator taking the constituents that make-up the gas portion 104, liquid portion 106, and solid portion 108 of the tri-state bodies 110 and processing (by providing the appropriate agitation and/aeration) them to form the tri-state body cleaning material 302. Examples of applicator types that can be used to form the tri-state body cleaning material 302 include proximity heads, manifolds, spargers, mixers, etc. It should be understood that any applicator type can be used to form the tri-state body cleaning material 302 as long as the applicator can be configured to provide the necessary agitation and/or aeration to generate the tri-state body cleaning material 302. In another embodiment, the tri-state body cleaning material 302 is generated in a reservoir prior to dispensing via an applicator to the substrate 112 surface. The reservoir being configured to apply sufficient agitation and/or aeration to the starting materials of the tri-state bodies 110 to generate the tri-state body cleaning material 302.
In one embodiment, the tri-state body 110 is removed by rinsing the surface of the substrate 112 with a liquid. The liquid directly contacts the tri-state body 110 to transport and remove the tri-state body 110 from the substrate 112 surface. In another embodiment, the tri-state body 110 is removed due to the attractive forces between the tri-state body 110 and adjacent tri-state bodies 110 that are themselves in the process of being removed form the substrate 112 surface. In still another embodiment, the tri-state body 110 is removed using an apparatus configured to mechanically sweep the tri-state body 110 off the surface of the substrate 112. It should be understood that the tri-state body 110 can be removed from the substrate 112 surface using any method as long the substrate 112 is not damaged as a result of the removal.
The method 500 continues on to operation 506 where a force is applied over the tri-state body to promulgate an interaction between the solid portion of the tri-state body and the contaminant particle. As discussed previously, the force can be applied via a pressure or contact force supplied by a fluid or adjacent tri-state bodies that are disposed over the tri-state body towards the surface of the substrate. Alternatively, in one embodiment, the force is applied by an apparatus designed to apply mechanical force against the tri-state body towards the substrate surface.
Continuing with
In one embodiment, the surfactant is distributed throughout the liquid portion 106 to define a plurality of hydrocarbon chains having a carboxyl group attached to one end of each of the plurality of hydrocarbon chains the are in suspension. The plurality of hydrocarbon chains being adverse to flocculation. In one embodiment, the dispersion of the surfactant is activated through the application of a base to the tri-state body.
Still with
The method 600 then moves on to operation 608 where the tri-state body is removed along with the particle from the surface of the substrate such that the interaction between the surfactant and the particle causes the particle to be removed along with the tri-state body. The interactions between the surfactant and the contaminant particle can be established through one or more mechanisms including adhesion, collision, attractive forces, and chemical bonding.
Although a few embodiments of the present invention have been described in detail herein, it should be understood, by those of ordinary skill, that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Therefore, the present examples and embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details provided therein, but may be modified and practiced within the scope of the appended claims.
This application claims the benefit of U.S. Provisional Application No. 60/755,377, filed Dec. 30, 2005. The disclosure of the above-identified application is incorporated herein by reference. This application is related to U.S. patent application Ser. No. 10/816,337, filed on Mar. 31, 2004, and entitled “Apparatuses and Methods for Cleaning a Substrate,” U.S. patent application Ser. No. 11/153,957, filed on Jun. 15, 2005, and entitled “Method and Apparatus for Cleaning a Substrate Using Non-Newtonian Fluids,” U.S. patent application Ser. No. 11/154,129, filed on Jun. 15, 2005, and entitled “Method and Apparatus for Transporting a Substrate Using Non-Newtonian Fluid,” U.S. patent application Ser. No. 11/174,080, filed on Jun. 30, 2005, and entitled “Method for Removing Material from Semiconductor Wafer and Apparatus for Performing the Same,” U.S. patent application Ser. No. 10/746,114, filed on Dec. 23, 2003, and entitled “Method and Apparatus for Cleaning Semiconductor Wafers using Compressed and/or Pressurized Foams, Bubbles, and/or Liquids,” U.S. patent application Ser. No. 11/336,215, filed on Jan. 20, 2006, entitled “Method and Apparatus for removing contamination from a substrate,” U.S. patent application Ser. No. 11/346,894, filed on Feb. 3, 2006, entitled “Method for removing contamination from a substrate and for making a cleaning solution,” and U.S. patent application Ser. No. 11/347,154, filed on Feb. 3, 2006, entitled “Cleaning compound and method and system for using the cleaning compound.” The disclosure of each of the above-identified related applications is incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
3037887 | Brenner et al. | Jun 1962 | A |
3167095 | Lissant | Jan 1965 | A |
3212762 | Carroll et al. | Oct 1965 | A |
3436262 | Crowe et al. | Apr 1969 | A |
3617095 | Lissant | Nov 1971 | A |
3978176 | Voegeli | Aug 1976 | A |
4085059 | Smith et al. | Apr 1978 | A |
4133773 | Simmons | Jan 1979 | A |
4156619 | Griesshammer | May 1979 | A |
4238244 | Banks | Dec 1980 | A |
4781764 | Leenaars | Nov 1988 | A |
4817652 | Liu et al. | Apr 1989 | A |
4838289 | Kottman et al. | Jun 1989 | A |
4849027 | Simmons | Jul 1989 | A |
4911761 | McConnell et al. | Mar 1990 | A |
4962776 | Liu et al. | Oct 1990 | A |
5000795 | Chung et al. | Mar 1991 | A |
5048549 | Hethcoat | Sep 1991 | A |
5102777 | Lin et al. | Apr 1992 | A |
5105556 | Kurokawa et al. | Apr 1992 | A |
5113597 | Sylla | May 1992 | A |
5175124 | Winebarger | Dec 1992 | A |
5181985 | Lampert et al. | Jan 1993 | A |
5226969 | Watanabe et al. | Jul 1993 | A |
5242669 | Flor | Sep 1993 | A |
5271774 | Leenaars et al. | Dec 1993 | A |
5288332 | Pustilnik et al. | Feb 1994 | A |
5306350 | Hoy et al. | Apr 1994 | A |
5336371 | Chung et al. | Aug 1994 | A |
5415191 | Mashimo et al. | May 1995 | A |
5417768 | Smith et al. | May 1995 | A |
5464480 | Matthews | Nov 1995 | A |
5472502 | Batchelder | Dec 1995 | A |
5494526 | Paranjpe | Feb 1996 | A |
5498293 | Ilardi et al. | Mar 1996 | A |
5656097 | Olesen et al. | Aug 1997 | A |
5660642 | Britten | Aug 1997 | A |
5705223 | Bunkofske | Jan 1998 | A |
5800626 | Cohen et al. | Sep 1998 | A |
5858283 | Burris | Jan 1999 | A |
5900191 | Gray et al. | May 1999 | A |
5904156 | Advocate, Jr. et al. | May 1999 | A |
5908509 | Olesen et al. | Jun 1999 | A |
5911837 | Matthews | Jun 1999 | A |
5932493 | Akatsu et al. | Aug 1999 | A |
5944581 | Goenka | Aug 1999 | A |
5944582 | Talieh | Aug 1999 | A |
5945351 | Mathuni | Aug 1999 | A |
5951779 | Koyanagi et al. | Sep 1999 | A |
5964954 | Matsukawa et al. | Oct 1999 | A |
5964958 | Ferrell et al. | Oct 1999 | A |
5968285 | Ferrell et al. | Oct 1999 | A |
5997653 | Yamasaka | Dec 1999 | A |
6048409 | Kanno et al. | Apr 2000 | A |
6049996 | Freeman | Apr 2000 | A |
6081650 | Lyons et al. | Jun 2000 | A |
6090217 | Kittle | Jul 2000 | A |
6092538 | Arai et al. | Jul 2000 | A |
6152805 | Takahashi | Nov 2000 | A |
6158445 | Olesen et al. | Dec 2000 | A |
6167583 | Miyashita et al. | Jan 2001 | B1 |
6228563 | Starov et al. | May 2001 | B1 |
6267125 | Bergman et al. | Jul 2001 | B1 |
6270584 | Ferrell et al. | Aug 2001 | B1 |
6272712 | Gockel et al. | Aug 2001 | B1 |
6276459 | Herrick et al. | Aug 2001 | B1 |
6286231 | Bergman et al. | Sep 2001 | B1 |
6290780 | Ravkin | Sep 2001 | B1 |
6296715 | Kittle | Oct 2001 | B1 |
6319801 | Wake et al. | Nov 2001 | B1 |
6352082 | Mohindra et al. | Mar 2002 | B1 |
6386956 | Sato et al. | May 2002 | B1 |
6398975 | Mertens et al. | Jun 2002 | B1 |
6401734 | Morita et al. | Jun 2002 | B1 |
6423148 | Aoki | Jul 2002 | B1 |
6439247 | Kittle | Aug 2002 | B1 |
6457199 | Frost et al. | Oct 2002 | B1 |
6491043 | Mohindra et al. | Dec 2002 | B2 |
6491764 | Mertens et al. | Dec 2002 | B2 |
6493902 | Lin | Dec 2002 | B2 |
6513538 | Chung et al. | Feb 2003 | B2 |
6514921 | Kakizawa et al. | Feb 2003 | B1 |
6527870 | Gotkis | Mar 2003 | B2 |
6532976 | Huh et al. | Mar 2003 | B1 |
6537915 | Moore et al. | Mar 2003 | B2 |
6562726 | Torek et al. | May 2003 | B1 |
6576066 | Namatsu | Jun 2003 | B1 |
6594847 | Krusell et al. | Jul 2003 | B1 |
6616772 | de Larios et al. | Sep 2003 | B2 |
6733596 | Mikhaylichenko et al. | May 2004 | B1 |
6787473 | Andreas | Sep 2004 | B2 |
6797071 | Kittle | Sep 2004 | B2 |
6802911 | Dickinson et al. | Jan 2005 | B2 |
6846380 | Dickinson et al. | Jan 2005 | B2 |
6851435 | Mertens et al. | Feb 2005 | B2 |
6874516 | Matsuno et al. | Apr 2005 | B2 |
6896826 | Wojtczak et al. | May 2005 | B2 |
6927176 | Verhaverbeke et al. | Aug 2005 | B2 |
6946396 | Miyazawa et al. | Sep 2005 | B2 |
6951042 | Mikhaylichenko et al. | Oct 2005 | B1 |
7122126 | Fuentes | Oct 2006 | B1 |
7648584 | Freer et al. | Jan 2010 | B2 |
20020072482 | Sachdev et al. | Jun 2002 | A1 |
20020094684 | Hirasaki et al. | Jul 2002 | A1 |
20020121290 | Tang et al. | Sep 2002 | A1 |
20020185164 | Tetsuka et al. | Dec 2002 | A1 |
20020195121 | Kittle | Dec 2002 | A1 |
20030075204 | de Larios et al. | Apr 2003 | A1 |
20030148903 | Bargaje et al. | Aug 2003 | A1 |
20030171239 | Patel et al. | Sep 2003 | A1 |
20030226577 | Orll et al. | Dec 2003 | A1 |
20040002430 | Verhaverbeke | Jan 2004 | A1 |
20040053808 | Raehse et al. | Mar 2004 | A1 |
20040134515 | Castrucci | Jul 2004 | A1 |
20040159335 | Montierth et al. | Aug 2004 | A1 |
20040163681 | Verhaverbeke | Aug 2004 | A1 |
20040261823 | de Larios et al. | Dec 2004 | A1 |
20050045207 | Nitta et al. | Mar 2005 | A1 |
20050132515 | Boyd et al. | Jun 2005 | A1 |
20050133060 | de Larios et al. | Jun 2005 | A1 |
20050133061 | de Larios et al. | Jun 2005 | A1 |
20050159322 | Min et al. | Jul 2005 | A1 |
20050176606 | Konno et al. | Aug 2005 | A1 |
20050183740 | Fulton et al. | Aug 2005 | A1 |
20060201267 | Liu | Sep 2006 | A1 |
20060283486 | de Larios et al. | Dec 2006 | A1 |
20060285930 | de Larios et al. | Dec 2006 | A1 |
20062084930 | Korolik et al. | Dec 2006 | |
20070000518 | de Larios et al. | Jan 2007 | A1 |
Number | Date | Country |
---|---|---|
40-38-587 | Jun 1992 | DE |
0827188 | Mar 1998 | EP |
0905746 | Mar 1999 | EP |
11-334874 | Dec 1999 | EP |
0989600 | Mar 2000 | EP |
1080797 | Mar 2001 | EP |
1803804 | Jul 2007 | EP |
53-076559 | Jul 1978 | JP |
56-084618 | Jul 1981 | JP |
56-084619 | Jul 1981 | JP |
59-24849 | Feb 1984 | JP |
60-005529 | Jan 1985 | JP |
62-119543 | May 1987 | JP |
63-077510 | Apr 1988 | JP |
02-309638 | Dec 1990 | JP |
5-15857 | Jan 1993 | JP |
06-177101 | Jun 1994 | JP |
07-006993 | Jan 1995 | JP |
11-350169 | Dec 1999 | JP |
2001-064688 | Mar 2001 | JP |
2002-66475 | Mar 2002 | JP |
2002-280330 | Sep 2002 | JP |
2002-309638 | Oct 2002 | JP |
2003-282513 | Oct 2003 | JP |
2005-194294 | Jul 2005 | JP |
WO-9916109 | Apr 1999 | WO |
WO-0033980 | Jun 2000 | WO |
WO-0059006 | Oct 2000 | WO |
WO-0112384 | Feb 2001 | WO |
WO-02101795 | Dec 2002 | WO |
WO-2005006424 | Jan 2005 | WO |
WO 2005064647 | Jul 2005 | WO |
Number | Date | Country | |
---|---|---|---|
20090308410 A1 | Dec 2009 | US |
Number | Date | Country | |
---|---|---|---|
60755377 | Dec 2005 | US |