Method for depositing film and method for manufacturing semiconductor device

Abstract

A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the present invention will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic diagram, showing a batch CVD apparatus of employed in an example according to the present invention;

FIG. 2 is a schematic diagram, showing a deposition flow in the example;

FIGS. 3A and 3B are graphs, useful in presenting a preferable film thickness of a HfSiO film formed in the second film-forming step;

FIGS. 4A and 4B are graphs, useful in presenting a preferable film thickness of a HfSiO film formed in the second film-forming step;

FIGS. 5A and 5B are graphs, useful in presenting a preferable film thickness of a HfSiO film formed in the second film-forming step;

FIG. 6 is a graph, showing a relationship between the type of the previous batch and the deposition rate;

FIG. 7 is a graph, showing a relationship between the type of the facing wafer and the deposition rate;

FIGS. 8A and 8B are graphs, useful in describing that a difference in the surface nitrogen concentration is caused by a difference in the nitrogen concentration before the NH₃ annealing;

FIG. 9A and FIG. 9B are schematic diagram of the reaction chamber, illustrating the interior wall of the reaction chamber and the facing wafer; and

FIG. 10 is a graph, showing a relationship between time of leaving the film after the NH₃ annealing and the nitrogen concentration.

Claims

1. A method for depositing a film, comprising: processing a wafer, including:forming a high dielectric constant film on a first wafer; andnitriding said high dielectric constant film formed on said first wafer;andperforming coating process including:forming a high dielectric constant film on a second wafer; andnitriding said high dielectric constant film formed on said second wafer,wherein said processing the wafer and said coating process are carried out in the same reaction chamber, andwherein said coating process is carried out before said processing the wafer.

2. The method according to claim 1, wherein, in said forming the high dielectric constant film on said second wafer, said high dielectric constant film is formed to have a thickness of not thinner than a diffusion length of nitrogen in said high dielectric constant film at a temperature of said nitridation of said high dielectric constant film formed on said second wafer.

3. The method according to claim 1, wherein said high dielectric constant film is a HfSiO film.

4. The method according to claim 1, wherein said processing the wafer is started within 24 hours after completing said coating process.

5. The method according to claim 1, wherein said forming the high dielectric constant film on the first wafer is performed while said first wafer is disposed to face to said second wafer.

6. A method for manufacturing a semiconductor device, comprising: depositing a high dielectric constant film containing nitrogen by employing the method according to claim 1.