K. Fujino et al., "Dependence of Deposition Rate on Base Materials in TEOS/O.sub.3 AP CVD," VMIC Conference--Jun. 12-13, 1990, pp. 187-193. |
J. Matsuura et al., "Substrate-Dependent Characteristics of APCVD Oxide Using TEOS and Ozone," Extended Abstracts of the 22nd International Soild State Devices and Materials--Sendia, Hotel Sendai Plaza--Aug. 22-24, 1990, pp. 239-242. |
K. Fujino et al., "Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure," J. Electrochemical Society, vol. 138, No. 2, pp. 550-554 (Feb. 1991). |
R.K. Chanana et al., "Effect of Annealing and Plasma Precleaning on the Electrical Properties of N.sub.2 O/SiH.sub.4 PECVD Oxide as Gate Material in MOSFETs and CCDs," Solid-State Electronics, vol. 36, No. 7, pp. 1021-1026 (Jul. 1993). |
E.J. McInerney et al., "A Planarized SiO.sub.2 Interlayer Dielectric with Bias-CVD," IEEE Transactions on Electron Devices, vol. ED-34, No. 3, pp. 615-619 (Mar. 1987). |
K. Kwok et al., "Surface Related Phenomena in Integrated PECVD/Ozone-TEOS SACVD Processes for Sub-Half Micron Gap Fill: Electrostatic Effects," J. Electrochemical Society, vol. 141, No. 8, pp. 2172-2177 (Aug. 1994). |