Claims
- 1. A method of processing a semiconductor wafer having a surface layer having an exposed surface and at least a part of said surface layer having a multiplicity of recesses therein, the method comprising:
- depositing a further layer on the exposed surface of at least said part of said surface layer without any melting of said further layer, the depositing of said further layer continuing at least until said further layer extends over all the recesses to close completely the openings of all of said recesses in the exposed surface;
- halting the depositing of said further layer; and
- subsequently subjecting said wafer and said further layer to elevated pressure and an elevated temperature sufficient to cause parts of said further layer to deform, without melting, to fill respective recesses;
- wherein the elevated temperature to which said further layer is subjected is significantly below the melting point of said further layer and is sufficient to decrease the yield strength of the material of said further layer to allow filling deformation.
- 2. A method as claimed in claim 1, wherein said further layer is one of an aluminum and an aluminum alloy.
- 3. A method as claimed in claim 2, wherein the elevated temperature to which said further layer is subjected is less than 500.degree. C.
- 4. A method as claimed in claim 3, wherein the elevated temperature to which said further layer is subjected is in excess of 400.degree. C.
Priority Claims (2)
Number |
Date |
Country |
Kind |
9111440 |
May 1991 |
GBX |
|
9202745 |
Feb 1992 |
GBX |
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Parent Case Info
This application is a Continuation-In-Part of now abandoned application, Ser. No. 08/147,438, filed Nov. 5, 1993, which in turn is a Continuation of now abandoned application Ser. No. 07/888,819, filed May 27, 1992.
US Referenced Citations (4)
Foreign Referenced Citations (9)
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Date |
Country |
0127020 |
Dec 1984 |
EPX |
0201713 |
Nov 1986 |
EPX |
0251523 |
Jan 1988 |
EPX |
0393381 |
Oct 1990 |
EPX |
4020324 |
Jan 1992 |
DEX |
63-308350 |
Dec 1988 |
JPX |
2-205678 |
Aug 1990 |
JPX |
2-213471 |
Aug 1990 |
JPX |
3-225829 |
Oct 1991 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Extended Abstracts. vol. 88, No. 2, 9 Oct. 1988, Princeton, New Jersey US p. 361; G. C. Schwartz: "Planarization Processes For Multilevel Metallization". |
IBM Technical Disclosure Bulletin. vol. 33, No. 1B, Jun. 1990, New York, US pp. 182-183; "High Aspect Ratio Fill By Multiple Depositions And Reflows". |
Patent Abstracts of Japan. vol. 015, No. 514 (E-1150) 27 Dec. 1991 & JP-A-3 225 829 (Fujitsu Ltd.) 4 Oct. 1991 *abstract*. |
Continuations (1)
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Number |
Date |
Country |
Parent |
888819 |
May 1992 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
147438 |
Nov 1993 |
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