This application claims priority to Chinese Patent Application No. 202111409294.X, filed on Nov. 25, 2021, the disclosure of which is incorporated herein by reference in its entirety.
The present application relates to the technical field of semiconductors, in particular to a method for improving a pit defect formed after a copper electroplating process.
As the size of metal copper wires shrinks, the opening of a metal via becomes increasingly small, and the gap filling of copper electroplating becomes more difficult. An XCDA purified environment protects a seed layer and improves a gap filling window while rendering the surface of a wafer excessively dry, resulting in a poor electroplating wetness effect. A bubble generated when the excessively dry wafer enters water is difficult to be discharged, and a surface void is formed in electroplating, thereby forming a pit defect in a subsequent CMP process. Therefore, it is necessary to optimize the electroplating method to solve the problem of the defect formed after the CMP in the XCDA purified environment.
In view of the above defect in the prior art, the objective of the present application is to provide a method for improving a pit defect formed after a copper electroplating process, so as to solve the problem of a defect formed after metal via filling in the prior art.
In order to achieve the above objective and other related objectives, the present application provides a method for improving a pit defect formed after a copper electroplating process, at least including:
step 1, providing a wafer, and forming a dielectric layer on the wafer;
step 2, etching the dielectric layer to form a trench;
step 3, sequentially forming a seed barrier layer and a conductive layer on the surface of the trench;
step 4, pre-cleaning the wafer to increase the wetness of the trench on the wafer;
step 5, filling the trench with copper by means of electroplating; and
step 6, polishing the upper surface of the trench to planarize the upper surface of the trench.
In some examples, in step 2, the trench is first defined by means of photolithography, and then the dielectric layer is etched to form the trench.
In some examples, the formation of the barrier layer and the conductive layer in step 3 is achieved by means of a PVD process.
In some examples, the wafer is pre-cleaned with deionized water in step 4.
In some examples, a method of pre-cleaning the wafer in step 4 is as follows: the wafer is enabled to rotate at 2-20 rpm/s, a chuck is provided, and nozzles are provided every 60 degrees on the edge of the chuck, the nozzles spraying deionized water toward the center of the wafer in a scattered manner.
In some examples, the flow rate of the deionized water in step 4 is 2 L/min, and a spray time is 3-10 s.
In some examples, a method for filling the trench with copper by means of electroplating in step 5 is as follows: the wafer is inclined by about 3 degrees with the frontside thereof facing downward, and is rotated into an electroplating solution so as to be electroplated.
In some examples, in step 6, the upper surface of the trench is polished by means of a chemical mechanical polishing method so as to be planarized.
As stated above, the method for improving a pit defect formed after a copper electroplating process of the present application has the following beneficial effects: in the present application, the wetness of the wafer surface can be increased by pre-cleaning a via. During copper electroplating filling, an excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, and a void is easy to be generated in electroplating. By adding the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved, thereby improving the gap filling capability and preventing the occurrence of a defect.
The embodiments of the present application are described below using specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in the Description. The present application can also be implemented or applied using other different specific embodiments, and various details in the Description can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.
Please refer to
The present application provides a method for improving a pit defect formed after a copper electroplating process. Referring to
Step 1. A wafer is provided, and a dielectric layer is formed on the wafer. Referring to
Step 2. The dielectric layer is etched to form a trench. Referring to
In this embodiment of the present application, in step 2, the trench is first defined by means of photolithography, and then the dielectric layer is etched to form the trench. That is, in step 2, a photoresist pattern is first formed on the dielectric layer by means of photolithography, and then the dielectric layer is etched according to the photoresist pattern to form the trench 04 as shown in
Step 3. A seed barrier layer and a conductive layer are formed on the surface of the trench. Referring to
In this embodiment of the present application, the formation of the barrier layer and the conductive layer in step 3 is achieved by means of a PVD process.
Step 4. The wafer is pre-cleaned to increase the wetness of the trench on the wafer. The wafer is cleaned in step 4. Before cleaning, the inside of the trench on the wafer is relatively dry, and after the cleaning, the wetness of the inside of the trench can be increased.
In this embodiment of the present application, the wafer is pre-cleaned with deionized water (DI water) in step 4 to increase the wetness of the trench. Referring to
In this embodiment of the present application, a method of pre-cleaning the wafer in step 4 is as follows: the wafer is enabled to rotate at 2-20 rpm/s, a chuck is provided, and nozzles are provided every 60 degrees on the edge of the chuck, the nozzles spraying deionized water toward the center of the wafer in a scattered manner.
In this embodiment of the present application, the flow rate of the deionized water in step 4 is 2 L/min, and a spray time is 3-10 s.
Step 5. The trench is filled with copper by means of electroplating. Referring to
In this embodiment of the present application, a method for filling the trench with copper by means of electroplating in step 5 is as follows: the wafer is inclined by about 3 degrees with the frontside thereof facing downward, and is rotated into an electroplating solution so as to be electroplated. After the electroplating filling, the trench is fully covered with copper, and the upper surfaces of the two sides outside the trench are also covered with copper.
Step 6. The upper surface of the trench is polished to planarize the upper surface of the trench.
In this embodiment of the present application, in step 6, the upper surface of the trench is polished by means of a chemical mechanical polishing method so as to be planarized.
To sum up, in the present application, the wetness of the wafer surface can be increased by pre-cleaning a via. During copper electroplating filling, an excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, and a void is easy to be generated in electroplating. By adding the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved, thereby improving the gap filling capability and preventing the occurrence of a defect. Therefore, the present application effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiment merely illustrates the principle and effect of the present application, rather than limiting the present application. Anyone skilled in the art can modify or change the above embodiment without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the art without departing from the spirit and technical idea disclosed in the present application shall still be covered by the claims of the present application.
Number | Date | Country | Kind |
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202111409294.X | Nov 2021 | CN | national |