Method for Manufacturing a Semiconductor Device

Abstract

A method of manufacturing a semiconductor device according to the invention is an effective technique for ensuring a sufficient process margin and enabling the formation of a fine pattern in a peripheral circuit region. The method includes forming an anti-reflective layer with a varying thickness in a peripheral circuit region and a cell region, and then over-etching the anti-reflective layer in the peripheral circuit region. The method is capable of improving the data processing speed of a semiconductor device and therefore increases the device efficiency.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing the relation between develop inspection critical dimension (DICD) and depth of focus (DOF) of a dense line with a line width of 57 nm, an isolation line pattern with a line width of 75 nm, and an isolation line pattern with a line width of 110 nm, respectively; and FIGS. 2a through 2h are cross-sectional views showing the steps of a method for manufacturing a semiconductor device according to a preferred embodiment of the invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereinafter, the invention is described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the invention.

FIG. 1 is a graph showing the relation between develop inspection critical dimension (DICD) and depth of focus (DOF) of a dense line with a line width of 57 nm, an isolation line pattern with a line width of 75 nm, and an isolation line pattern with a line width of 110 nm, respectively.

Referring to the graph, the isolation line pattern with a line width of 75 nm has a comparatively smaller DOF margin than that of the dense line pattern with a line width of 57 nm.

Meanwhile, the isolation line pattern with a line width of 110 nm, which is relatively larger than the dense line pattern with a line width of 57 nm, exhibits an improved DOF margin compared to the isolation line pattern with a line width of 75 nm.

As mentioned earlier, to ensure a DOF margin of an isolation pattern formed in a peripheral circuit region, forming a pattern with a comparatively large line width is more attainable than a fine pattern.

FIGS. 2 a through 2h are cross-sectional views showing the steps of a manufacturing method a semiconductor device according to a preferred embodiment of the invention. A dense pattern is formed in a cell region, and an isolation pattern is formed in a peripheral circuit region.

Referring to FIG. 2a, a hard mask layer 110, a first anti-reflective layer 120, and a first photoresist 130 are sequentially formed on an upper part of an etching target layer 100 having a cell region and a peripheral circuit region.

Next, a portion corresponding to the cell region is exposed by a first exposing mask 140 having a first light shielding pattern 145. Here, the first anti-reflective layer 120 preferably includes an organic anti-reflective layer or an inorganic anti-reflective layer. The exposure process preferably is chosen from, but is not limited to, I-Line, KrF, ArF, and ArF immersion.

Referring to FIG. 2b, a development process is carried out to form a first photoresist pattern 135, exposing the first anti-reflective layer 120 in the peripheral circuit region.

Referring to FIG. 2c, using the first photoresist pattern 135 as an etching mask, the first anti-reflective layer 120 is etched to form a first anti-reflective layer pattern 125. The first anti-reflective layer pattern 125 preferably remains only in the cell region.

Referring to FIG. 2d, the first photoresist pattern 135 is removed, and a second anti-reflective layer 127 having a preset thickness is formed at the entire upper surface of the hard mask layer 110 including the first anti-reflective layer pattern 125. As illustrated, the first anti-reflective layer pattern 125 and the second anti-reflective layer 127 are laminated in the cell region, while only the second anti-reflective layer 127 is formed in the peripheral circuit region. The second anti-reflective layer 127 is preferably either an organic anti-reflective layer or an inorganic anti-reflective layer, and preferably has a thickness of 20 Å to 500 Å. Therefore, the net anti-reflective layer thickness in the cell region differs from the anti-reflective layer thickness in the peripheral circuit region by the thickness of the first anti-reflective layer pattern 125.

Referring to FIGS. 2e and 2f, a second photoresist 150 is formed at the entire upper surface of the second anti-reflective layer 127, and an exposure process is carried out using a second exposing mask 160 with a second light shielding pattern 165 and 166 in the form of a line/space pattern. The exposure process preferably is chosen from, but is not limited to, I-Line, KrF, ArF, and ArF immersion. In detail, the second light shielding pattern of the second exposing mask 160 includes of a dense pattern 165 formed in the corresponding cell region, and an isolation pattern 166 formed in the corresponding peripheral circuit region. In particular, the isolation pattern 166 of a corresponding peripheral circuit region has a relatively larger line width than the dense pattern 165 of a corresponding cell region.

Referring to FIG. 2g, the second photoresist 150 is developed to form second photoresist line patterns 155 and 156. The second photoresist line pattern 155 of the peripheral circuit region has a relatively larger line width than the second photoresist line pattern 156 of the cell region.

Referring to FIG. 2h, using the second photoresist line patterns 155 and 156 as an etching mask, the first anti-reflective layer pattern 125, the second anti-reflective layer 127, and the hard mask layer 150 are etched to form hard mask patterns 115 and 116 in the form of a line/space pattern. Here, a line width ratio between line and space is in a range of 1: 1.5-100.

Since the second anti-reflective layer 127 in the peripheral circuit region is comparatively thinner than that of the cell region, it is over-etched while the first anti-reflective layer 125 and the second anti-reflective layer 127 formed in the cell region are etched. In this manner, the linewidth of the second anti-reflective layer 127 of the peripheral circuit region may be reduced.

Moreover, the second photoresist pattern 156 of the peripheral circuit region shrinks. Since the hard mask layer 110 is etched by using the shrunk second photoresist pattern 156 as an etching mask, the hard mask pattern 116 of the peripheral circuit region has a reduced line width.

Later, using the hard mask patterns 115 and 116 as an etching mask, the etching target layer 100 is etched to form an etching target layer pattern (not shown). Consequently, a fine pattern is formed in the peripheral circuit region.

While the invention has been described with respect to specific embodiments, various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: sequentially forming a hard mask layer and a first anti-reflective layer over an etching target layer, the etching target layer including a dense pattern region and an isolation pattern region;selectively etching the first anti-reflective layer to expose the hard mask layer in the isolation pattern region;forming a second anti-reflective layer of a preset thickness over the first anti-reflective layer and the hard mask layer in the isolation pattern region ; andselectively etching the second anti-reflective layer, the first anti-reflective layer, and the hard mask layer, thereby forming a hard mask pattern and over-etching the second anti-reflective layer in the isolation pattern region.

2. The method of claim 1, wherein the dense pattern region comprises a cell region, and the isolation pattern region comprises a peripheral circuit region.

3. The method of claim 1, wherein the first and second anti-reflective layers each comprise an organic anti-reflective layer.

4. The method of claim 1, wherein the first and second anti-reflective layers each comprise an inorganic anti-reflective layer.

5. The method of claim 1, wherein the second anti-reflective layer has a thickness in a range of 20 Å to 500 Å.

6. The method of claim 1, wherein the step of selectively etching the second anti-reflective layers, the first-anti-reflective layer, and the hard mask layer further comprises the steps of: forming a photoresist over the second anti-reflective layer;exposing and developing the photoresist using an exposing mask comprising a light shielding pattern, thereby forming a photoresist pattern;selectively etching the second anti-reflective layer, the first anti-reflective layer, and the hard mask layer, using the photoresist pattern as an etching mask; andremoving the photoresist pattern, the first anti-reflective layer, and the second anti-reflective layer.

7. The method of claim 6, wherein the light shielding pattern has a first line width in the isolation pattern region and a second line width in the dense pattern region, and the first line width is greater than the second line width.

8. The method of claim 6, wherein the step of exposing and developing the photoresist comprises using I-line, KrF, ArF, or ArF Immersion exposure.

9. The method of claim 1, wherein the step of selectively etching the second anti-reflective layers, the first-anti-reflective layer, and the hard mask layer further comprises forming the hard mask pattern with a line/space pattern and a line width ratio between line and space in a range of 1:1.5 to 1:100.