Claims
- 1. A method to manufacture a dielectrics dividing wafer, comprising the steps of: forming dielectric films in a pattern on at least one face of two semiconductor substrates; bonding the substrates together at the faces to form a single wafer having a front face surface and a rear face surface and having the dielectric films located internally to the single wafer; cutting grooves in the form of a vertical wall from the front face surface and the rear face surface of the single wafer so that the grooves reach the dielectric films; attaching partition dielectric films to the sides of the grooves; and filling the grooves with polycrystalline silicon; wherein semiconductor regions, surrounded by the partition dielectric films, are formed continuously from the front face surface of the single wafer to the rear face surface of the single wafer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-102897 |
May 1991 |
JPX |
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Parent Case Info
This is a division of application Ser. No. Divisional of Ser. No. 08/186,890 filed Jan. 27, 1994, now U.S. Pat. No. 5,381,033 which in turn is a continuation of Ser. No. 07/877,723 filed May 4, 1992, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1-253265 |
Oct 1989 |
JPX |
Non-Patent Literature Citations (1)
Entry |
IEEE 1987 Custom Integrated Circuits Conference, "Dielectrically Isolated Intelligent Power Switch", Yu Ohata and Takao Izumita, pp. 443-446. |
Divisions (1)
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Number |
Date |
Country |
Parent |
186890 |
Jan 1994 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
877723 |
May 1992 |
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