Claims
- 1. A method for manufacturing a semiconductor device having a resist mark for measuring the accuracy of overlay of a photomask disposed on the semiconductor wafer, comprising:forming a first layer on the semiconductor wafer; forming a first rectangularly shaped opening in the first layer to make a first measurement mark; forming an intermediate layer on the first layer and in the first opening; forming a second layer on the intermediate layer; forming a second measurement mark and a third measurement mark by forming a second rectangularly shaped opening and a frame-shaped opening in the second layer, the second rectangularly shaped opening being located above the first opening, the second measurement mark being isolated from the third measurement mark by the frame-shaped opening; wherein the second measurement mark is formed in a frame-shaped.
- 2. A method for manufacturing a semiconductor wafer according to claim 1, wherein the second measurement mark has a width in the range of 0.3-1.0 μm.
- 3. A method for manufacturing a semiconductor device having a resist mark for measuring the accuracy of overlay of a photomask disposed on the semiconductor wafer, comprising:forming a first layer on the semiconductor wafer; forming a first rectangularly shaped opening in the first layer to make a first measurement mark; forming an intermediate layer on the first layer and in the first opening; forming a second layer on the intermediate layer; forming a second measurement mark and a third measurement mark by forming a second rectangularly shaped opening and four openings in the second layer, the second rectangularly shaped opening being located above the first opening, the second measurement mark being formed in a frame-shaped, the four openings being formed along by each side of the second measurement mark, and the second measurement mark being connected to the third measurement mark at its corners.
- 4. A method for manufacturing a semiconductor wafer according to claim 3, wherein the second measurement mark has a width in the range of 0.3-1.0 μm.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-362716 |
Dec 1998 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Japanese Patent Application No. 10-362716, filed Dec. 21, 1998, the entire subject matter of which is incorporated herein by reference. This application is a continuation of Ser. No. 09/458,819, filed Dec. 13, 1999 now U.S. Pat. No. 6,368,980.
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4632724 |
Ghesebro et al. |
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A |
5952247 |
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Sep 1999 |
A |
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Number |
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Country |
4-159706 |
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JP |
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Continuations (1)
|
Number |
Date |
Country |
Parent |
09/458819 |
Dec 1999 |
US |
Child |
10/061332 |
|
US |