While releasing property between a resin layer and an imprinting mold is given by using a metal thin film layer, a method for manufacturing a substrate advantageous for forming a conductive layer by plating and a substrate manufactured by the method are provided. According to one aspect of the present invention, a method for manufacturing a substrate by imprinting, the method comprising: laminating a metal thin film layer on top of a resin layer; pressurizing the resin layer and the metal thin film layer by an imprinting mold which comprises a side having a pattern in correspondence with a wiring pattern; curing a resin which forms the resin layer; and removing the imprinting mold from the resin layer and the metal thin film layer, may be presented.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a flow diagram illustrating a method for manufacturing a substrate according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a substrate according to an embodiment of the present invention.
Claims
1. A method for manufacturing a substrate by imprinting, the method comprising:
laminating a metal thin film layer on top of a resin layer;pressurizing the resin layer and the metal thin film layer by an imprinting mold which includes a side having a pattern in correspondence with a wiring pattern;curing a resin which forms the resin layer; andremoving the imprinting mold from the resin layer and the metal thin film layer.
2. The method of claim 1, wherein the resin layer comprises a thermosetting resin.
3. The method of claim 2, wherein the thermosetting resin is an epoxy resin.
4. The method of claim 1, wherein the metal thin film layer comprises at least one selected from the group consisting of Au, Ag, Ni, Al, Cu and an alloy thereof.
5. The method of claim 1, wherein a thickness of the metal thin film layer is 0.1 to 100 μm.
6. The method of claim 2, wherein the laminating is performed at a temperature at which the thermosetting resin possesses thermal flowability and bonds to the metal thin film layer.
7. The method of claim 6, wherein the laminating is performed at the temperature range of 60 to 120° C.
8. The method of claim 2, wherein the curing is performed at the temperature range of 80 to 250° C.
9. The method of claim 1, further comprising:
forming a conductive layer on the negative part of the wiring pattern transferred to the metal thin film layer; andremoving the conductive layer and the metal thin film layer to correspond with a height of the resin layer.
10. The method of claim 9, wherein the conductive layer of the forming the conductive layer is formed by electrolysis plating.
11. A substrate manufactured by the method for manufacturing a substrate by imprinting of the claim 1.
12. The substrate of claim 11, comprising a conductive wiring having a width of 50 nm to 15 μm.
Patent Application
20070207297
