Claims
- 1. A method for coating selected surface areas of an electronic component comprising the process steps of:
- a. applying a layer of an organic polymer protective coating material having a capability to withstand an elevated temperature of from approximately 325.degree. C. to about 475.degree. C. for a period of time sufficient to chemically vapor deposit at least one layer of glass on the polymer layer and having a low glass transition temperature range of from about 150.degree. C. to 350.degree. C. on a selected surface area of an electronic component and having the ability to bond well to the at least one layer of chemically vapor deposited glass, and
- b. applying by chemical vapor deposition a first layer of a glass material on the layer of protective coating material, wherein the glass material is one selected from the group consisting of borosilicate glass and phosphosilicate glass.
- 2. The method of claim 1 and including the additional process step of:
- c. applying a second layer of a glass material on the first layer of glass material.
- 3. The method of claim 2 wherein
- the material of the second layer of glass is silicon dioxide.
- 4. The method of claim 1 including the process steps for depositing the first glass layer of
- heating the coated electronic component to a temperature of from 325.degree. C. to about 475.degree. C., and
- causing a mixture of selected gases to flow over and about the coated electronic component for a sufficient time to vapor deposit a layer of glass of a predetermined thickness on the layer of protective coating material.
- 5. The method of claim 4 wherein
- the thickness of the layer of organic polymer protective coating material is from 1 micrometer to 100 microns and
- the polymer coated component is heated to a temperature of about 400.degree. C..+-.50.degree. C.,
- the mixture of gases comprises diborane, silane, oxygen and argon, and
- the predetermined thickness of the layer is from one micrometer to 10 micrometers.
- 6. The method of claim 5 including the additional process step of
- terminating the flow of diborane gas after achieving the predetermined thickness but continuing the flow of silane, oxygen and argon gases to flow over and about the borosilicate coated component for a sufficient time to grow a layer of silicon dioxide on the layer of borosilicate glass.
- 7. The method of claim 6 wherein
- the layer of silicon dioxide is from 1000 A to 5000 A in thickness.
- 8. The method of claim 1 wherein
- the glass transition temperature is approximately 200.degree. C.
- 9. A method for coating selected surface areas of an electronic component comprising the process steps of:
- a. applying a layer of an organic polymer protective coating material having a capability to withstand an elevated temperature of from approximately 325.degree. C. to about 475.degree. C. for a period of time sufficient to chemically vapor deposit at least one layer of glass on the polymer layer and having a low glass transition temperature range of from about 150.degree. C. to 350.degree. C. on a selected surface area of an electronic component and having the ability to bond well to the at least one layer of chemically vapor deposited glass,
- the organic polymer protective coating material is a copolymer material which when cured in situ is a reaction product of a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane amine capped material which when cured has the recurring structural units of the formula: ##STR8## with from 5 to 50 mol percent intercondensed structural units of the formula: ##STR9## wherein R is a divalent hydrocarbon radical;
- R' is a monovalent hydrocarbon radical;
- R" is a tetravalent organic radical;
- Q is a divalent silicon-free organic radical which is the residue of an organic diamine;
- x is an integer having a value of greater than 1, and
- m and n are integers greater than 1,
- and
- b. applying by chemical vapor deposition a first layer of a glass material on the layer of protective coating material, wherein the glass material is one selected from the group consisting of borosilicate glass and phosphosilicate glass.
- 10. The method of claim 9 wherein
- the polymeric material, when cured, is the reaction product of benzophenone tetracarboxylic acid dianhydride with methylene dianiline and bis(.gamma.-aminopropyl)tetramethyldisoloxane.
- 11. The method of claim 10 wherein
- the bis(.gamma.-aminopropyl)tetramethyldisoloxane is present in the reaction product in the amount of about 30 mol percent.
- 12. The method of claim 11 and including the additional process step of:
- c. applying a second layer of a glass material on the first layer of glass material.
- 13. The method of claim 12 wherein
- the material of the second layer of glass is silicon dioxide.
- 14. The method of claim 11 including the process steps for depositing the first glass layer of
- heating the coated electronic component to a temperature of from 325.degree. C. to about 475.degree. C., and
- causing a mixture of selected gases to flow over and about the coated electronic component for a sufficient time to vapor deposit a layer of glass of a predetermined thickness on the layer of protective coating material.
- 15. The method of claim 14 wherein
- the thickness of the layer of organic polymer protective coating material is from 1 micrometer to 100 microns and
- the polymer coated component is heated to a temperature of about 400.degree. C..+-.50.degree. C.,
- the mixture of gases comprises diborane, silane, oxygen and argon, and
- the predetermined thickness of the layer is from one micrometer to 10 micrometers.
- 16. The method of claim 15 including the process step of
- terminating the flow of diborane gas after achieving the predetermined thickness but continuing the flow of silane, oxygen and argon gases to flow over and about the borosilicate coated component for a sufficient time to grow a layer of silicon dioxide on the layer of borosilicate glass.
- 17. The method of claim 15 wherein
- the practice of depositing the layer of silicon dioxide is practiced for a sufficient time to form a layer of from 1000 A to 5000 A in thickness.
- 18. The method of claim 15 wherein
- the first layer of glass is a borosilicate glass comprising from 15 to 25 mol percent of B.sub.2 O.sub.3.
- 19. The method of claim 18 wherein
- the mol percent of B.sub.2 O.sub.3 is 19.+-.2.
- 20. The method of claim 19 including the additional process step of
- terminating the flow of diborane gas after achieving the predetermined thickness but continuing the flow of silane, oxygen and argon gases to flow over and about the borosilicate coated component for a sufficient time to grow a layer of silicon dioxide on the layer of borosilicate glass.
- 21. The method of claim 9 and including the additional process step of:
- c. applying a second layer of a glass material on the first layer of glass material.
- 22. The method of claim 21 wherein
- the material of the second layer of glass is silicon dioxide.
- 23. The method of claim 9 including the process steps for depositing the first glass layer of
- heating the coated electronic component to a temperature of from 325.degree. C. to about 475.degree. C., and
- causing the mixture of selected gases to flow over and about the coated electronic component for a sufficient time to vapor deposit a layer of glass of a predetermined thickness on the layer of protective coating material.
- 24. The method of claim 23 wherein
- the thickness of the layer of organic polymer protective coating material is from 1 micrometer to 100 microns and
- the polymer coated component is heated to a temperature of about 400.degree. C..+-.50.degree. C.,
- the mixture of gases comprises diborane, silane, oxygen and argon, and
- the predetermined thickness of the layer is from one micrometer to 10 micrometers.
- 25. The method of claim 24 including the additional process step of
- terminating the flow of diborane gas after achieving the predetermined thickness but continuing the flow of silane, oxygen and argon gases to flow over and about the borosilicate coated component for a sufficient time to grow a layer of silicon dioxide on the layer of borosilicate glass.
Parent Case Info
This is a continuation, of application Ser. No. 601,838, filed Aug. 4, 1975 and now abandoned.
US Referenced Citations (24)
Continuations (1)
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Number |
Date |
Country |
Parent |
601838 |
Aug 1975 |
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