Claims
- 1. A method of processing a substrate, the method comprising the steps of:
supplying a process gas including a first gas containing oxygen, a second gas containing fluorine and a third gas containing chlorine; and creating a plasma from the process gas.
- 2. The method according to claim 1, wherein the first gas containing oxygen comprises at least one of O2, SO2, N2O, and NO2.
- 3. The method according to claim 1, wherein the second gas containing fluorine comprises at least one of SF4, SF6, SiF4, and F2.
- 4. The method according to claim 1, wherein the third gas containing chlorine comprises at least one of SiCl4 and Cl2.
- 5. The method according to claim 1, wherein the process gas comprises SO2, SF4, and SiCl4.
- 6. The method according to claim 1, wherein the process gas comprises SO2, SF4, and Cl2.
- 7. The method according to claim 1, wherein the process gas comprises SO2, SiF4, and SiCl4.
- 8. The method according to claim 1, wherein the process gas comprises SO2, SiF4, and Cl2.
- 9. The method according to claim 1, wherein the process gas comprises O2, F2, and Cl2.
- 10. The method according to claim 1, wherein the process gas comprises NO2, F2, and Cl2.
- 11. The method according to claim 1, wherein the process gas comprises N2O, F2, and Cl2.
- 12. The method according to claim 5, wherein a flow rate of SO2 ranges from 1 to 200 sccm.
- 13. The method according to claim 5, wherein a flow rate of the SF4 ranges from 1 to 750 sccm.
- 14. The method according to claim 5, wherein a flow rate of the SiCl4 ranges from 5 to 400 sccm.
- 15. The method according to claim 5, wherein a flow rate of SO2 ranges from 1 to 200 sccm, a flow rate of SF4 ranges from 1 to 750 sccm, and a flow rate of SiCl4 ranges from 5 to 400 sccm.
- 16. The method according to claim 5, wherein a flow rate of SO2 ranges from 1 to 100 sccm, a flow rate of SF4 ranges from 1 to 300 sccm, and a flow rate of SiCl4 ranges from 10 to 150 sccm.
- 17. The method according to claim 6, wherein a flow rate of SO2 ranges from 1 to 200 sccm.
- 18. The method according to claim 6, wherein a flow rate of the SF4 ranges from 1 to 750 sccm.
- 19. The method according to claim 6, wherein a flow rate of the Cl2 ranges from 10 to 750 sccm.
- 20. The method according to claim 6, wherein a flow rate of SO2 ranges from 1 to 200 sccm, a flow rate of SF4 ranges from 1 to 750 sccm, and a flow rate of Cl2 ranges from 10 to 750 sccm.
- 21. The method according to claim 6, wherein a flow rate of SO2 ranges from 1 to 100 sccm, a flow rate of SF4 ranges from 1 to 300 sccm, and a flow rate of Cl2 ranges from 25 to 300 sccm.
- 22. The method according to claim 7, wherein a flow rate of SO2 ranges from 1 to 200 sccm.
- 23. The method according to claim 7, wherein a flow rate of the SiF4 ranges from 1 to 750 sccm.
- 24. The method according to claim 7, wherein a flow rate of the SiCl4 ranges from 5 to 400 sccm.
- 25. The method according to claim 7, wherein a flow rate of SO2 ranges from 1 to 200 sccm, a flow rate of SiF4 ranges from 1 to 750 sccm, and a flow rate of SiCl4 ranges from 5 to 400 sccm.
- 26. The method according to claim 7, wherein a flow rate of SO2 ranges from 1 to 100 sccm, a flow rate of SiF4 ranges from 1 to 300 sccm, and a flow rate of SiCl4 ranges from 10 to 150 sccm.
- 27. The method according to claim 8, wherein a flow rate of SO2 ranges from 1 to 200 sccm.
- 28. The method according to claim 8, wherein a flow rate of the SiF4 ranges from 1 to 750 sccm.
- 29. The method according to claim 8, wherein a flow rate of the Cl2 ranges from 10 to 750 sccm.
- 30. The method according to claim 8, wherein a flow rate of SO2 ranges from 1 to 200 sccm, a flow rate of SiF4 ranges from 1 to 750 sccm, and a flow rate of Cl2 ranges from 10 to 750 sccm.
- 31. The method according to claim 8, wherein a flow rate of SO2 ranges from 1 to 100 sccm, a flow rate of SiF4 ranges from 1 to 300 sccm, and a flow rate of Cl2 ranges from 25 to 300 sccm.
- 32. The method according to claim 9, wherein a flow rate of O2 ranges from 1 to 200 sccm.
- 33. The method according to claim 9, wherein a flow rate of the F2 ranges from 1 to 1500 sccm.
- 34. The method according to claim 9, wherein a flow rate of the Cl2 ranges from 10 to 750 sccm.
- 35. The method according to claim 9, wherein a flow rate of O2 ranges from 1 to 200 sccm, a flow rate of F2 ranges from 1 to 1500 sccm, and a flow rate of Cl2 ranges from 10 to 750 sccm.
- 36. The method according to claim 9, wherein a flow rate of O2 ranges from 1 to 100 sccm, a flow rate of F2 ranges from 1 to 600 sccm, and a flow rate of Cl2 ranges from 25 to 300 sccm.
- 37. The method according to claim 10, wherein a flow rate of NO2 ranges from 1 to 200 sccm.
- 38. The method according to claim 10, wherein a flow rate of the F2 ranges from 1 to 1500 sccm.
- 39. The method according to claim 10, wherein a flow rate of the Cl2 ranges from 10 to 750 sccm.
- 40. The method according to claim 10, wherein a flow rate of NO2 ranges from 1 to 200 sccm, a flow rate of F2 ranges from 1 to 1500 sccm, and a flow rate of Cl2 ranges from 10 to 750 sccm.
- 41. The method according to claim 10, wherein a flow rate of NO2 ranges from 1 to 100 sccm, a flow rate of F2 ranges from 1 to 600 sccm, and a flow rate of Cl2 ranges from 25 to 300 sccm.
- 42. The method according to claim 11, wherein a flow rate of N2O ranges from 1 to 400 sccm.
- 43. The method according to claim 11, wherein a flow rate of the F2 ranges from 1 to 1500 sccm.
- 44. The method according to claim 11, wherein a flow rate of the Cl2 ranges from 10 to 750 sccm.
- 45. The method according to claim 11, wherein a flow rate of N2O ranges from 1 to 400 sccm, a flow rate of F2 ranges from 1 to 1500 sccm, and a flow rate of Cl2 ranges from 10 to 750 sccm.
- 46. The method according to claim 11, wherein a flow rate of N2O ranges from 1 to 200 sccm, a flow rate of F2 ranges from 1 to 600 sccm, and a flow rate of Cl2 ranges from 25 to 300 sccm.
- 47. The method as claimed in claim 1, wherein the process gas further includes an inert gas.
- 48. The method as claimed in claim 47, wherein the inert gas comprises at least one of argon, helium, xenon, krypton, and nitrogen.
- 49. A method of processing a substrate, the method comprising the steps of:
supplying a process gas including at least one deposition gas and at least one etching gas; and creating a plasma from the process gas.
- 50. The method according to claim 49, wherein a deposition gas comprises at least one of O2, SO2, N2O, and NO2.
- 51. The method according to claim 49, wherein an etching gas comprises at least one of SF4, SF6, SiF4, Cl2, SiCl4, and F2.
- 52. The method according to claim 49, wherein the process gas comprises O2 and F2.
- 53. The method according to claim 52, wherein a flow rate of O2 ranges from 1 to 200 sccm.
- 54. The method according to claim 52, wherein a flow rate of the F2 ranges from 1 to 1500 sccm.
- 55. The method according to claim 52, wherein a flow rate of O2 ranges from 1 to 100 sccm, and a flow rate of F2 ranges from 1 to 600 sccm.
- 56. A plasma processing system comprising:
a process chamber; a gas injection system configured to inject a process gas within the process chamber; and a plasma source configured to create a plasma from the process gas, wherein the process gas includes a first gas containing oxygen, a second gas containing fluorine, and a third gas containing chlorine.
- 57. The system according to claim 56, wherein the plasma source comprises an inductive coil.
- 58. The system according to claim 56, wherein the plasma source comprises a plate electrode.
- 59. The system according to claim 56, wherein the first gas containing oxygen comprises at least one of O2 and SO2.
- 60. The system according to claim 56, wherein the second gas containing fluorine comprises at least one of SF4, SF6, SiF4, and F2.
- 61. The system according to claim 56, wherein the third gas containing chlorine comprises at least one of SiCl4 and Cl2.
- 62. The system according to claim 56, wherein the process gas comprises SO2, SF4, and SiCl4.
- 63. The system according to claim 56, wherein the process gas comprises SO2, SF4, and Cl2.
- 64. The system according to claim 56, wherein the process gas comprises SO2, SiF4, and SiCl4.
- 65. The system according to claim 56, wherein the process gas comprises SO2, SiF4, and Cl2.
- 66. The system according to claim 56, wherein the process gas comprises O2, F2, and Cl2.
- 67. The system according to claim 56, wherein the process gas comprises NO2, F2, and Cl2.
- 68. The system according to claim 56, wherein the process gas comprises N2O, F2, and Cl2.
- 69. The system as claimed in claim 56, wherein the process gas further includes an inert gas.
- 70. The system as claimed in claim 69, wherein the inert gas comprises at least one of argon, helium, xenon, krypton, and nitrogen.
- 71. A plasma processing system comprising:
a process chamber; a gas injection system configured to inject a process gas within the process chamber; and a plasma source configured to create a plasma from the process gas, wherein the process gas includes a deposition gas and an etching gas.
- 72. The system according to claim 71, wherein the plasma source comprises an inductive coil.
- 73. The system according to claim 71, wherein the plasma source comprises a plate electrode.
- 74. The system according to claim 71, wherein the deposition gas comprises at least one of O2, SO2, N2O, and NO2.
- 75. The system according to claim 71, wherein the etching gas comprises at least one of SF4, SF6, SiF4, Cl2, SiCl4, and F2.
- 76. The system according to claim 75, wherein the process gas comprises O2 and F2.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims priority to U.S. provisional Ser. No. 60/330,788, filed on Oct. 31, 2001, the entire contents of which are herein incorporated by reference.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/US02/31607 |
10/31/2002 |
WO |
|
Provisional Applications (1)
|
Number |
Date |
Country |
|
60330788 |
Oct 2001 |
US |