Claims
- 1. A method of fabricating a semiconductor device, comprising steps of:(a) forming a gate electrode of a metal-insulator-semiconductor field-effect transistor over a main surface of a semiconductor body; (b) after said step (a), introducing an impurity in said semiconductor body to form a first semiconductor region of n-type conductivity serving as a source or drain region of said metal-insulator-semiconductor field-effect transistor; (c) after said step (b), forming a side wall spacer on said surfaces of said gate electrode; (d) after said step (c), introducing arsenic in said first semiconductor region to form a shallow high concentration region of said first conductivity type; (e) after said step (c), introducing phosphorus in said first semiconductor region to form a deep low concentration region of said first conductivity type; (f) after said steps (d) and (e), forming a cobalt layer over said shallow high concentration region and said main surface; (g) after step (f), performing heat treatment to form a cobalt suicide layer on said shallow high concentration region; and (h) after step (g), removing unreacted cobalt of said cobalt layer, wherein a junction depth of said shallow high concentration region is greater than a junction depth of said deep low concentration region, and wherein a dose amount of the arsenic is greater than a dose amount of the phosphorus, such that an impurity concentration of said shallow high concentration region is greater than an impurity concentration of said deep low concentration region.
- 2. A method of fabricating a semiconductor device according to claim 1, further comprising the step of:(i) between said steps (f) and (g), forming a TiN film over said cobalt layer, wherein said step (g) is performed in a nitrogen atmosphere.
- 3. A method of fabricating a semiconductor device according to claim 2, wherein after said step (h), a heat treatment is performed on said cobalt silicide layer in a nitrogen atmosphere.
- 4. A method of fabricating a semiconductor device according to claim 1, further comprising the step of:(j) after said step (c), forming an insulating film over a region where said shallow high concentration region is to be formed, wherein said steps (d) and (e) are conducted through said insulating film.
- 5. A method of fabricating a semiconductor device, comprising steps of:(a) forming a gate electrode of metal-insulator-semiconductor field-effect transistor over a main surface of a semiconductor body, (b) after said step (a), introducing an impurity in said semiconductor body to form a first semiconductor region of a first conductivity type serving as a source or drain region of said metal-insulator-semiconductor field-effect transistor; (c) after said step (b), forming a side wall spacer on side surfaces of said gate electrode; (d) after said step (c), introducing a first impurity in said first semiconductor region to form a shallow high concentration region of said first conductivity type; (e) after said step (c), introducing a second impurity in said first semiconductor region to form a deep low concentration region of said first conductivity type; (f) after said steps (d) and (e), forming a cobalt layer over said shallow high concentration region and said main surface; (g) after step (f), performing heat treatment to form a cobalt silicide layer on said shallow high concentration region; and (h) after step (g), removing unreacted cobalt of said cobalt layer, wherein a junction depth of said shallow high concentration region is greater than a junction depth of said deep low concentration region, and wherein a dose amount of said first impurity is greater than a dose amount of said second impurity, such that an impurity concentration of said shallow high concentration region is greater than an impurity concentration of said deep low concentration region.
- 6. A method of fabricating a semiconductor device according to claim 5, further comprising the step of:(i) between said steps (f) and (g), forming a TiN film over said cobalt layer, wherein said step (g) is performed in a nitrogen atmosphere.
- 7. A method of fabricating a semiconductor device according to claim 6, wherein after said step (h), a heat treatment is performed on said cobalt silicide layer in a nitrogen atmosphere.
- 8. A method of fabricating a semiconductor device according to claim 5, further comprising the step of:(j) after said step (c), forming an insulating film over a region where said shallow high concentration region is to be formed, wherein said steps (d) and (e) are conducted through said insulating film.
Parent Case Info
This application is a Divisional application of application Ser. No. 09/910,794, filed July 24, 2001, which is a Divisional application of application Ser. No. 09/486,899, filed Mar. 3, 2000, now U.S. Pat. No. 6,300,206, which is a national stage application filed under 35 USC 371 of International (PCT) Application No. PCT/JP97/03328, filed Sep. 19, 1997.
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