Claims
- 1. A method of forming a fiducial for aligning an integrated circuit die, the fiducial disposed in a fiducial region of the integrated circuit die, the method comprising:
- disposing a diffusion region in a substrate of the integrated circuit die in the fiducial region;
- disposing an oxide layer over the diffusion region without a contact to the diffusion region within the fiducial region; and
- disposing a metal pattern over the oxide layer in the fiducial region.
- 2. The method described in claim 1 further comprising disposing a light block in the fiducial region between the metal pattern and an epoxy underfill layer.
- 3. The method described in claim 2 wherein the integrated circuit die is comprised in a controlled collapse chip connection (C4) packaged chip.
- 4. The method described in claim 1 further comprising exposing the fiducial from a back side of the integrated circuit die.
- 5. The method described in claim 4 wherein the exposing is performed with a laser chemical etcher without a focused ion beam mill.
- 6. The method described in claim 1 wherein the substrate comprises silicon.
- 7. The method described in claim 1 further comprising coupling the diffusion region to a contact disposed outside the fiducial region.
Parent Case Info
This is a divisional of application Ser. No. 08/771,275, filed Dec. 20, 1996.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
88305199 |
Aug 1988 |
EPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
771275 |
Dec 1996 |
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