Claims
- 1. A fine pattern forming method comprising the steps of:
- placing a sample on which a fine pattern is to be formed on a stage in a vacuum chamber;
- evacuating the interior of said vacuum chamber to achieve a predetermined degree of vacuum;
- supplying a reactive gas into said vacuum chamber;
- applying a magnetic field to levitate one of said stage and an opposed electrode located in said vacuum chamber to maintain a predetermined gap between said stage and said opposed electrode; and
- generating a plasma of said reactive gas within said vacuum chamber by said stage and said opposed electrode, thereby forming a fine pattern in said sample.
- 2. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a plasma etching method.
- 3. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a reactive ion etching method.
- 4. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a magnetic field supported reactive ion etching method.
- 5. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a electron cyclotron plasma etching method.
- 6. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a neutral beam etching method.
- 7. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a light excited etching method.
- 8. A fine pattern forming method according to claim 1, wherein said fine pattern forming method is a light supported etching method.
- 9. A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a sputter etching method.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-263872 |
Oct 1990 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/865,648, filed Apr. 10, 1992, now U.S. Pat. No. 5,228,940 which is a continuation of application Ser. No. 07/644,574, filed Jan. 23, 1991.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4351805 |
Reisman et al. |
Sep 1982 |
|
4563240 |
Shibata et al. |
Jan 1986 |
|
Foreign Referenced Citations (16)
Number |
Date |
Country |
0132538 |
Feb 1985 |
EPX |
3914065 |
Oct 1990 |
DEX |
3935189 |
May 1991 |
DEX |
4-128780 |
Mar 1992 |
DEX |
4128779 |
Mar 1992 |
DEX |
58-17018 |
Feb 1983 |
JPX |
59-94422 |
May 1984 |
JPX |
60-62460 |
Apr 1985 |
JPX |
60-195938 |
Oct 1985 |
JPX |
61-87884 |
May 1986 |
JPX |
61-227169 |
Oct 1986 |
JPX |
65-57214 |
Mar 1987 |
JPX |
63-219137 |
Sep 1988 |
JPX |
1-107539 |
Apr 1989 |
JPX |
1-279783 |
Nov 1989 |
JPX |
2-229442 |
Sep 1990 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Yoneda et al, "Anisotropic Etching of Poly-Si By RIE", Dry Process Symposium, 1981, pp. 47-53. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
865648 |
Apr 1992 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
644574 |
Jan 1991 |
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