Claims
- 1. A method of forming a patterned layer on a surface over a substrate, comprising:
depositing a photoresist on the surface, the photoresist patterned to define at least one recess extending vertically through the photoresist, wherein the recess includes a notch or undercut extending horizontally within the photoresist from an opening in a sidewall of the recess circumjacent a base of the recess; sputtering a material onto the photoresist and into the recess, wherein an aspect ratio of the recess and a height of the opening of the notch or undercut are such that the notch or undercut lies substantially in a shadow beneath the photoresist relative to the material sputtered into the recess; and removing the photoresist, wherein the material sputtered onto the photoresist is removed with the photoresist.
- 2. The method as claimed in claim 1 wherein a height to width aspect ratio of the recess is greater than 0.5.
- 3. The method as claimed in claim 1 wherein the vertical height of the opening of the notch or undercut is 25% or less of a vertical depth of the recess.
- 4. A method as claimed in claim 2 wherein the height of the opening of the notch or undercut is 25% or less of the depth of the recess.
- 5. The method as claimed in claim 1 wherein the height of the opening of the notch or undercut is 10% or less of the depth of the recess.
- 6. The method as claimed in claim 2 wherein the height of the opening of the notch or undercut is 10% or less of the depth of the recess.
- 7. The method as claimed claim 1 wherein the height of the opening of the notch or undercut is more than one quarter and less than three quarters a nominal height of the material deposited at the base of the recess.
- 8. The method as claimed in claim 1 wherein the photoresist is removed by a solvent.
- 9. A method as claimed in claim 1 wherein a sputter source of the material is larger than a diameter of the substrate.
- 10. The method as claimed in claim 1 wherein a sputter source of the material is spaced about 250 mm from the substrate.
- 11. A method of forming a patterned layer on a surface over a substrate, comprising:
depositing a photoresist on the surface, the photoresist patterned to define at least one recess extending vertically through the photoresist, wherein the recess includes a notch or undercut extending horizontally within the photoresist from an opening in a sidewall of the recess circumjacent a base of the recess; sputtering a material onto the photoresist and onto the surface at the base of the recess, wherein a height of the opening of the notch or undercut is less than three quarters a nominal height of the material sputtered onto the surface at the base of the recess; and removing the photoresist, wherein the material sputtered onto the photoresist is removed with the photoresist.
- 12. The method as claimed in claim 11 wherein a height to width aspect ratio of the recess is greater than 0.5.
- 13. The method as claimed in claim 11 wherein the vertical height of the opening of the notch or undercut is 25% or less of a vertical depth of the recess.
- 14. A method as claimed in claim 12 wherein the height of the opening of the notch or undercut is 25% or less of the depth of the recess.
- 15. The method as claimed in claim 11 wherein the height of the opening of the notch or undercut is 10% or less of the depth of the recess.
- 16. The method as claimed in claim 12 wherein the height of the opening of the notch or undercut is 10% or less of the depth of the recess.
- 17. The method as claimed in claim 11 wherein the photoresist is removed by a solvent.
- 18. A method as claimed in claim 11 wherein a sputter source of the material is larger than a diameter of the substrate.
- 19. The method as claimed in claim 11 wherein a sputter source of the material is spaced about 250 mm from the substrate.
- 20. The method as claimed claim 11 wherein the height of the opening of the notch or undercut is more than one quarter and less than three quarters a nominal height of the material deposited at the base of the recess.
- 21. A method of forming a patterned layer on a surface over a substrate, comprising:
depositing a photoresist on the surface, the photoresist patterned to define at least one recess extending vertically through the photoresist, wherein the recess includes a notch or undercut extending horizontally within the photoresist from an opening in a sidewall of the recess circumjacent a base of the recess; sputtering a material onto the photoresist and onto the surface at the base of the recess, wherein an aspect ratio of the recess and a height of the opening of the notch or undercut are such that the material sputtered onto the photoresist at the sidewall of the recess is not continuous with the material sputtered onto the surface at the base of the recess; and removing the photoresist, wherein the material sputtered onto the photoresist is removed with the photoresist.
- 22. The method as claimed in claim 21 wherein the photoresist is removed by a solvent.
- 23. A method as claimed in claim 21 wherein a sputter source of the material is larger than a diameter of the substrate.
- 24. The method as claimed in claim 21 wherein a sputter source of the material is spaced about 250 mm from the substrate.
- 25. The method as claimed claim 21 wherein the height of the opening of the notch or undercut is more than one quarter and less than three quarters a nominal height of the material deposited at the base of the recess.
Priority Claims (1)
Number |
Date |
Country |
Kind |
0127075.0 |
Nov 2001 |
GB |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] A claim of priority is made to U.S. Provisional Patent Application Serial No. 60/391,971, filed Jun. 28, 2002, and to British Patent Application No. 0127075.0, filed Nov. 10, 2001, the contents of both of which are incorporated herein by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60391971 |
Jun 2002 |
US |