Claims
- 1. A method of forming a semiconductor providing the steps of:providing a substrate having a metallic conductor; depositing a dielectric layer onto the substrate; forming a via through the dielectric layer and exposing the metallic conductor; depositing copper having an oxide layer formed in situ into the via; and forming an oxide layer in situ in the copper.
- 2. The method of claim 1, further comprising the step of depositing an additional amount of copper on the oxide layer.
- 3. The method of claim 1, further comprising depositing at least one barrier layer into the via between the dielectric and the copper.
- 4. The method of claim 3, wherein the barrier layer is made from a material selected from the group consisting of tantalum nitride, titanium nitride, titanium tungsten, tantalum, titanium, tantalum silicon nitride, tungsten nitride, and combinations thereof.
- 5. The method of claim 3, further comprising depositing a copper-containing intermediate layer onto the barrier layer.
- 6. The method of claim 5, wherein the copper is deposited onto the copper-containing intermediate layer.
- 7. The method of claim 5, wherein the copper-containing intermediate layer is deposited to a thickness of from about 1000 Å to about 3000 Å.
- 8. The method of claim 1, wherein the step of forming the oxide layer in situ further comprises adding an amount of Na2S2O8 in an acidic medium.
- 9. The method of claim 1, wherein the copper is deposited by chemical vapor deposition.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional of U.S. patent application Ser. No. 09/385,716, filed Aug. 30, 1999 now abandoned, which is hereby incorporated by reference herein in its entirety.
US Referenced Citations (15)