Claims
- 1. A process for forming an electrical contact to at least a portion of a semiconductor device, said semiconductor device adjacent an oxide region comprising the steps of:
- forming a refractory metal over at least a portion of said semiconductor device and said oxide region;
- heat treating said refractory metal to form metal silicide where said refractory metal is in contact with said semiconductor device and leaving unreacted metal over said oxide region;
- forming an etch protection layer over at least a portion of said unreacted metal, said etch protection layer at least partially overlying an interface between said unreacted metal and said metal silicide; and
- etching away said unreacted metal which is not protected by said etch protection layer.
- 2. The method as recited in claim 1 wherein the step of forming an etch protection layer is a step of forming a photoresist mask on said refractory metal.
- 3. The method as recited in claim 1 wherein said metal silicide is in electrical contact with an active region of a transistor, and further comprising the steps of:
- forming an oxide layer on a surface of said transistor;
- forming a contact aperture in said oxide layer to said unreacted metal at a region outside a perimeter of said active area of said transistor; and
- forming a metal contact to said unreacted metal through said aperture.
- 4. The method as recited in claim 3 wherein said aperture is formed outside of a perimeter of an isolation region of said transistor.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a Rule 60 division of U.S. application Ser. No. 476,149, filed Feb. 5, 1990, now U.S. Pat. No. 5,061,986, which was a File Wrapper continuation of U.S. application Ser. No. 088,632, filed Aug. 20, 1987, now abandoned, which was a File Wrapper continuation of U.S. application Ser. No. 693,062, filed Jan. 22, 1985, now abandoned.
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Divisions (1)
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476149 |
Feb 1990 |
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Continuations (2)
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88632 |
Aug 1987 |
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693062 |
Jan 1985 |
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