Claims
- 1. A method of making a solder ball pad on a lead supported on a dielectric substrate, said method comprising:
depositing a positive photoresist material over a metal layer supported on said substrate; forming an opening in said photoresist material exposing a portion of said metal layer; depositing at least one metal through said opening onto the exposed surface of said metal layer forming a solder ball pad; and removing said photoresist material from said metal layer.
- 2. The method of claim 1, wherein said at least one metal comprises nickel.
- 3. The method of claim 1, further including enlarging said opening in said photoresist material and depositing through the enlarged opening a layer of another metal surrounding said solder ball pad.
- 4. The method of claim 3, wherein said another metal comprises gold and gold alloys.
- 5. The method of claim 3, further including removing portions of said metal layer using said photoresist material as a mask to define a lead extending from said solder ball pad over the surface of said substrate.
- 6. The method of claim 5, wherein at least a portion of said lead is peelable from said substrate.
- 7. The method of claim 3, further including depositing a bondable material onto an exposed surface of said another metal.
- 8. The method of claim 7, wherein said bondable material comprises solder material.
- 9. The method of claim 1, further including depositing through said opening in said photoresist material a layer of bondable material onto said solder ball pad.
- 10. The method of claim 9, further including enlarging said opening in said photoresist material and depositing through said enlarged opening a layer of another metal surrounding said layer of bondable material.
- 11. The method of claim 10, wherein said bondable material comprises solder material.
- 12. The method of claim 10, wherein said another metal comprises gold and gold alloys.
- 13. The method of claim 10, further including removing portions of said metal layer using said photoresist material as a mask to define a lead extending from said solder ball pad over the surface of said substrate.
- 14. The method of claim 13, further including at least partially separating said lead from the surface of said substrate.
- 15. The method of claim 10, further including heating said bondable material and layer of another metal to reflow said material and said metal to form a solder ball therefrom.
- 16. A method of making a microelectronic component comprising:
providing a dielectric substrate having a surface supporting an electrically conductive layer; coating said electrically conductive layer with positive photoresist material; forming a plurality of openings in said photoresist material exposing said electrically conductive layer therein; depositing a first metal layer within said openings over the exposed electrically conductive layer; selectively removing said electrically conductive layer to form leads extending over said surface of said substrate in electrical contact with said first metal layer; and removing said photoresist material from said electrically conductive layer.
- 17. The method of claim 16, further including enlarging said openings in said photoresist material and depositing through said enlarged opening a second metal layer over said first metal layer.
- 18. The method of claim 17, further including depositing a bondable material onto an exposed surface of said second metal layer.
- 19. The method of claim 17, further including patterning the said photoresist material to define said leads prior to said selectively removing said electrically conductive layer.
- 20. The method of claim 19, wherein the thickness of said first and second metal layer is less than the thickness of said photoresist material.
- 21. The method of claim 16, further including at least partially separating said leads from said surface of said substrate.
- 22. The method of claim 16, further including depositing a bondable material through said openings in said photoresist material over the exposed surface of said first metal layer.
- 23. The method of claim 22, further including enlarging said openings in said photoresist material and depositing through the enlarged openings a second metal layer over said bondable material.
- 24. The method of claim 23, wherein said first metal layer comprises nickel, said second metal layer comprises gold and gold alloys, and said bondable material comprises tin and tin alloys.
- 25. The method of claim 23, further including at least partially separating said leads from said surface of said substrate.
- 26. The method claim 23, further including heating said microelectronic component to a temperature to cause said bondable material to reflow.
- 27. A method of making a microelectronic component comprising:
providing a dielectric substrate having a surface supporting a metal layer; depositing a positive photoresist material over said metal layer; patterning said photoresist material to delineate on said metal layer a plurality of pad regions exposed through openings formed in said photoresist material and a plurality of lead regions covered by said photoresist material extending over said surface of said substrate from said pad regions; depositing a first electrically conductive material onto said metal layer through said openings in said photoresist material in said pad regions; removing portions of said metal layer uncovered by said patterning of said photoresist material to form leads in electrical contact with said electrically conductive material in said pad regions; and removing residual photoresist material from said metal layer.
- 28. The method of claim 27, further including enlarging said openings in said photoresist material and depositing a second electrically conductive material through said enlarged openings onto an exposed surface of said first electrically conductive material.
- 29. The method of claim 28, further including depositing a bondable material onto an exposed surface of said second electrically conductive material.
- 30. The method of claim 28, wherein the thickness of said first and second electrically conductive materials is less than the thickness of said photoresist material.
- 31. The method of claim 27, further including at least partially separating said leads from said surface of said substrate.
- 32. The method of claim 27, further including depositing a bondable material through said openings onto an exposed surface of said first electrically conductive material.
- 33. The method of claim 32, further including enlarging said openings in said photoresist material and depositing through said enlarged openings a second electrically conductive material over said bondable material.
- 34. The method claim 33, further including heating said microelectronic component to a temperature to cause said bondable material to reflow.
- 35. The method of claim 33, further including at least partially separating said leads from said surface of said substrate.
- 36. The method claim 27, wherein said patterning of said photoresist material to delineate said pad regions occurs prior to patterning of said photoresist material to delineate said lead regions.
- 37. A solder pad on a lead supported on a dielectric substrate made in accordance with the method of claim 1.
- 38. A microelectronic component made in accordance with the method of claim 16.
- 39. A microelectronic component made in accordance with the method of claim 27.
- 40. A method of making a microelectronic packaging comprising:
providing a first microelectronic component having a front surface supporting a plurality of contacts; providing a second microelectronic component having a surface supporting a plurality of leads, said second microelectronic component made by providing a dielectric substrate having a surface supporting an electrically conductive layer; coating said electrically conductive layer with a positive photoresist material; forming a plurality of openings in said photoresist material exposing said electrically conductive layer therein; depositing a first metal layer within said openings over said exposed electrically conductive layer; selectively removing said electrically conductive layer to form leads extending over said surface of said substrate in electrical contact with said first metal layer; and removing said photoresist material from said electrically conductive layer; at least partially separating said leads from said substrate; positioning said second microelectronic component overlying said first microelectronic component; bonding an end of said leads to said contacts with a bondable material therebetween; and separating said first and second microelectronic components from each other into spaced apart relationship whereby the end of said leads remain bonded to said contacts and the other end of said leads remain supported by said dielectric substrate.
- 41. The method of claim 40, further including enlarging said openings in said photoresist material and depositing through said enlarged openings a second metal over said first metal layer.
- 42. The method of claim 41, further including depositing a bondable material onto an exposed surface of said second metal layer.
- 43. The method of claim 41, wherein the thickness of said first and second metal layers is less than the thickness of said photoresist material.
- 44. The method of claim 40, further including patterning said photoresist material to define said leads prior to said selectively removing said electrically conductive layer.
- 45. The method claim 44, further including at least partially separating said leads from the surface of said substrate.
- 46. The method claim 40, further including depositing a bondable material through said openings in said photoresist material over the exposed surface of said first metal layer.
- 47. The method of claim 46, further including enlarging said openings in said photoresist material and depositing through the enlarged openings a second metal layer over said bondable material.
- 48. The method of claim 47, wherein said first metal layer comprises nickel, said second metal layer comprises gold and gold alloys and said bondable material comprises tin and tin alloys.
- 49. The method of claim 47, further including heating said microelectronic component to a temperature to cause said bondable material to reflow.
- 50. The method of claim 47, further including at least partially separating said leads from said surface of said substrate.
- 51. A method of making a microelectronic packaging comprising:
providing a first microelectronic component having a front surface supporting a plurality of contacts; providing a second microelectronic component having a surface supporting a plurality of leads, said second microelectronic component made by providing a dielectric substrate having a surface supporting a metal layer; depositing a positive photoresist material over said metal layer; patterning said photoresist material to delineate on said metal layer a plurality of pad regions exposed through openings formed in said photoresist material and a plurality of lead regions covered by said photoresist material extending over said surface of said substrate from said pad regions; depositing a first electrically conductive material onto said metal layer through said openings in said photoresist material in said pad regions; removing portions of said metal layer uncovered by said patterning of said photoresist material to form said leads in electrical contact with said electrically conductive material in said pad regions; removing residual photoresist material from said metal layer; at least partially separating said leads from said substrate; positioning said second microelectronic component overlying said first microelectronic component; bonding said leads to said contacts with a bondable material therebetween; and separating said first and second microelectronic components from each other into spaced apart relationship whereby a portion of said leads remain bonded to said contacts and another portion of said leads remain supported by said dielectric substrate.
- 52. The method of claim 51, further including enlarging said openings in said photoresist material and depositing a second electrically conductive material through said enlarged openings onto an exposed surface of said first electrically conductive material.
- 53. The method of claim 52, further including depositing a bondable material onto an exposed surface of said second electrically conductive material.
- 54. The method of claim 52, wherein the thickness of said first and second electrically conductive materials is less than the thickness of said photoresist material.
- 55. The method of claim 51, further including depositing a bondable material through said openings onto an exposed surface of said first electrically conductive material.
- 56. The method of claim 55, further including enlarging said openings in said photoresist material and depositing through said enlarged openings a second electrically conductive material over said bondable material.
- 57. The method of claim 56, further including heating said microelectronic component to a temperature to cause said bondable material to reflow.
- 58. The method claim 56, further including at least partially separating said leads from said surface of said substrate by removing portions of said substrate underlying said leads.
- 59. The method of claim 51, further including at least partially separating said leads from said surface of said substrate by removing portions of said substrate underlying said leads.
- 60. The method of claim 51, wherein said patterning of said photoresist material to delineate said pad regions occurs prior to patterning of said photoresist material to delineate said lead regions.
- 61. A microelectronic package made by the method of claim 40.
- 62. A microelectronic package made by the method of claim 51.
CROSS-REFERENCED RELATED APPLICATION
[0001] The present patent application claims priority to U.S. Provisional Application No. 60/288,771, filed May 4, 2001, which is incorporated herein by reference in its entirety.
Provisional Applications (1)
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Number |
Date |
Country |
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60288771 |
May 2001 |
US |