Claims
- 1. A method of forming a metallization structure in an integrated circuit, comprising:
forming an insulating layer on a substrate layer; forming at least one opening in the insulating layer extending to the substrate layer; forming a conductive layer comprising nickel and vanadium inside the at least one opening; and forming a metal layer on the conductive layer.
- 2. The method of claim 1, wherein the at least one opening is a contact or via.
- 3. The method of claim 1, wherein the at least one opening has an aspect ratio of at least about 4.
- 4. The method of claim 1, wherein the conductive layer comprising nickel and vanadium is formed by physical vapor deposition.
- 5. The method of claim 4, wherein the physical vapor deposition is performed with a DC bias voltage between about 500 and about 600 V applied to a physical sputtering target.
- 6. The method of claim 4, wherein the conductive layer comprising nickel and vanadium has a vanadium weight percent of at least about 7%.
- 7. The method of claim 5, wherein the physical vapor deposition is performed at a pressure between about 20 and about 40 m torr.
- 8. The method of claim 5, wherein the physical vapor deposition is performed at a pressure between about 0.25 and about 5 m torr.
- 9. The method of claim 1, wherein the metal layer comprises copper.
- 10. The method of claim 9, wherein the conductive layer comprising nickel and vanadium has a thickness of at least about 200 Å.
- 11. The method of claim 9, wherein the conductive layer comprising nickel and vanadium has a thickness of at least about 1000 Å and the metal layer is formed by electroplating.
- 12. A method of forming a metallization structure in an integrated circuit, comprising:
forming an insulating layer on a substrate layer; forming at least one opening in the insulating layer extending to the substrate layer; forming a first conductive layer inside the at least one opening; forming a second conductive layer on the first conductive layer inside the at least one opening, wherein the second conductive layer comprises nickel and vanadium; and forming a metal layer on the second conductive layer.
- 13. The method of claim 12, wherein the at least one opening is a contact or via.
- 14. The method of claim 12, wherein the opening has an aspect ratio of at least about 4.
- 15. The method of claim 12, wherein the first conductive layer comprises a refractory metal.
- 16. The method of claim 15, wherein the refractory metal is selected from the group consisting of titanium, tantalum, and tungsten.
- 17. The method of claim 12, wherein the second conductive layer is formed by physical vapor deposition.
- 18. The method of claim 12, wherein the second conductive layer has a thickness of at least about 200 Å.
- 19. The method of claim 12, wherein the second conductive layer has a thickness of at least about 1000 Å and the metal layer is formed by electroplating.
- 20. The method of claim 12, wherein the metal layer comprises copper.
- 21. The method of claim 17, wherein the second conductive layer has a vanadium weight percent of at least about 7%.
- 22. The method of claim 17, wherein the physical vapor deposition is performed with a DC bias voltage between about 500 and about 600 V applied to a physical sputtering target.
- 23. The method of claim 22, wherein the physical vapor deposition is performed at a pressure between about 20 and about 40 m torr.
- 24. The method of claim 22, wherein the physical vapor deposition is performed at a pressure between about 0.25 and about 5 m torr.
- 25. The method of claim 22, wherein the physical vapor deposition is performed using an inert sputtering gas having a flow rate of between about 50 to about 75 sccm.
- 26. The method of claim 25, wherein the inert sputtering gas is selected from the group consisting of argon, helium, neon and xenon.
- 27. A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a processing system using a method comprising:
forming an insulating layer on a substrate; forming at least one opening in the insulating layer extending to the substrate; forming a conductive layer comprising nickel and vanadium inside the at least one opening; and forming a metal layer on the conductive layer.
- 28. The computer storage medium of claim 27, wherein the at least one opening is a contact or via.
- 29. The computer storage medium of claim 27, wherein the at least one opening formed in the insulating layer has an aspect ratio of at least about 4.
- 30. The computer storage medium of claim 27, wherein the conductive layer is formed by physical vapor deposition.
- 31. The computer storage medium of claim 27, wherein the metal layer comprises copper.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. provisional application 60/213,130, entitled “A Method of Metallization Using a Nickel-Vanadium Layer”, filed on Jun. 22, 2000, which is incorporated here in by reference in its entirety.
Provisional Applications (1)
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Number |
Date |
Country |
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60213130 |
Jun 2000 |
US |