Patent Application
20240287672
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2023-027702, filed on Feb. 24, 2023, the entire contents of which are incorporated herein by reference.
The present disclosure relates to a method of processing a substrate, a method of manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium.
As a process of manufacturing a semiconductor device, a process of forming a film on a surface including a recess may be often carried out.
Some embodiments of the present disclosure provide a technique capable of improving the step coverage of a film formed on a substrate.
According to one embodiment of the present disclosure, there is provided a technique that includes: (a1) supplying a first modifying gas to the substrate; (a2) supplying a first process gas containing a first element to the substrate; (b1) supplying a second modifying gas to the substrate; and (b2) supplying a second process gas, which contains a second element and is more readily adsorbed on a surface of the substrate than the first process gas under a same condition, to the substrate, wherein (a1) and (a2) are performed a first number of times and (b1) and (b2) are performed a second number of times to form a film containing the first element and the second element, and wherein (b1) is performed under a condition in which the second modifying gas is more readily adsorbed on the surface of the substrate than the first modifying gas under a same condition.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure.
Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.
Embodiments of the present disclosure will now be described mainly with reference to
As shown in
A reaction tube 203 is disposed inside the heater 207 to be concentric with the heater 207. The reaction tube 203 is made of, for example, a heat resistant material such as quartz (SiO2) or silicon carbide (SiC), and has a cylindrical shape with its upper end closed and its lower end opened. A manifold 209 is disposed to be concentric with the reaction tube 203 under the reaction tube 203. The manifold 209 is made of, for example, a metal material such as stainless steel (SUS), and has a cylindrical shape with both of its upper and lower ends opened. The upper end portion of the manifold 209 engages with the lower end portion of the reaction tube 203 to support the reaction tube 203. An O-ring 220a serving as a seal member is provided between the manifold 209 and the reaction tube 203. Similar to the heater 207, the reaction tube 203 is vertically installed. A process container (reaction container) mainly includes the reaction tube 203 and the manifold 209. A process chamber 201 is formed in a hollow cylindrical portion of the process container. The process chamber 201 is configured to accommodate a plurality of wafers 200 as substrates. Processing on the wafers 200 is performed in the process chamber 201.
Nozzles 249a to 249c as first to third suppliers are provided in the process chamber 201 to penetrate through a sidewall of the manifold 209. The nozzles 249a to 249c are also referred to as first to third nozzles, respectively. The nozzles 249a to 249c are made of, for example, a heat resistant material such as quartz or SiC. Gas supply pipes 232a to 232c are connected to the nozzles 249a to 249c, respectively. The nozzles 249a to 249c are different nozzles, and each of the nozzles 249a and 249c is provided adjacent to the nozzle 249b.
Mass flow controllers (MFCs) 241a to 241c, which are flow rate controllers (flow rate control parts), and valves 243a to 243c, which are opening/closing valves, are provided in the gas supply pipes 232a to 232c, respectively, sequentially from the upstream side of a gas flow. Each of gas supply pipes 232d and 232g is connected to the gas supply pipe 232a at the downstream side of the valves 243a. Each of gas supply pipes 232e and 232h is connected to the gas supply pipe 232b at the downstream side of the valves 243b. Each of gas supply pipes 232f and 232i is connected to the gas supply pipe 232c at the downstream side of the valves 243c. MFCs 241d to 241i and valves 243d to 243i are provided in the gas supply pipes 232d to 232i, respectively, sequentially from the upstream side of a gas flow. The gas supply pipes 232a to 232i are made of, for example, a metal material such as SUS.
As shown in
The nozzle 249a is disposed farther from an exhaust port 231a, which will be described later, than the nozzles 249b and 249c. That is, the nozzles 249b and 249c are disposed closer to the exhaust port 231a than the nozzle 249a. Further, in a plane view, the nozzles 249b and 249c are arranged in line symmetry with a straight line passing through the centers of the wafers 200 in a state in which the wafers 200 are loaded into the process chamber 201, that is, the center of the reaction tube 203 and the center of the exhaust port 231a, as the axis of symmetry. Further, the nozzles 249a and 249b are arranged to face each other on a straight line with the center of the reaction tube 203 therebetween.
A first modifying gas is supplied from the gas supply pipe 232a into the process chamber 201 via the MFC 241a, the valve 243a, and the nozzle 249a.
A second modifying gas is supplied from the gas supply pipe 232b into the process chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b.
A first reaction gas as a first process gas is supplied from the gas supply pipe 232c into the process chamber 201 via the MFC 241c, the valve 243c, and the nozzle 249c.
A first precursor gas as the first process gas is supplied from the gas supply pipe 232d into the process chamber 201 via the MFC 241d, the valve 243d, the gas supply pipe 232b, and the nozzle 249b.
A second precursor gas as a second process gas is supplied from the gas supply pipe 232e into the process chamber 201 via the MFC 241e, the valve 243e, the gas supply pipe 232b, and the nozzle 249b.
A second reaction gas as the second process gas is supplied from the gas supply pipe 232f into the process chamber 201 via the MFC 241f, the valve 243f, the gas supply pipe 232c, and the nozzle 249c.
An inert gas is supplied from the gas supply pipes 232g to 232i into the process chamber 201 via the MFCs 241g to 241i, the valves 243g to 243i, the gas supply pipes 232a to 232c, and the nozzles 249a to 249c, respectively. The inert gas acts as a purge gas, a carrier gas, a dilution gas, or the like.
A first modifying gas supplier mainly includes the gas supply pipe 232a, the MFC 241a, and the valve 243a. A second modifying gas supplier mainly includes the gas supply pipe 232b, the MFC 241b, and the valve 243b. A first process gas supplier (a first precursor gas supplier and a first reaction gas supplier) mainly includes the gas supply pipes 232c and 232d, the MFCs 241c and 241d, and the valves 243c and 243d. A second process gas supplier (a second precursor gas supplier and a second reaction gas supplier) mainly includes the gas supply pipes 232e and 232f, the MFCs 241e and 241f, and the valves 243e and 243f. An inert gas supplier mainly includes the gas supply pipes 232g to 232i, the MFCs 241g to 241i, and the valves 243g to 243i.
Any or all of the above-described various gas suppliers may be configured as an integrated-type gas supply system 248 in which the valves 243a to 243i, the MFCs 241a to 241i, and so on are integrated. The integrated-type gas supply system 248 is connected to each of the gas supply pipes 232a to 232i. In addition, the integrated-type gas supply system 248 is configured such that operations of supplying various gases into the gas supply pipes 232a to 232i (that is, the opening/closing operation of the valves 243a to 243i, the flow rate adjustment operation by the MFCs 241a to 241i, and the like) are controlled by a controller 121 which will be described later. The integrated-type gas supply system 248 is configured as an integral type or detachable-type integrated unit, and may be attached to and detached from the gas supply pipes 232a to 232i and the like on an integrated unit basis, so that the maintenance, replacement, extension, etc. of the integrated-type gas supply system 248 can be performed on an integrated unit basis.
The exhaust port 231a for exhausting an internal atmosphere of the process chamber 201 is installed in the lower portion of the sidewall of the reaction tube 203. The exhaust port 231a may be installed to extend from a lower portion of the sidewall of the reaction tube 203 to an upper portion thereof, that is, along the wafer arrangement region. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum exhaust device, for example, a vacuum pump 246, is connected to the exhaust pipe 231 via a pressure sensor 245, which is a pressure detector (pressure detection part) for detecting the internal pressure of the process chamber 201, and an auto pressure controller (APC) valve 244, which is a pressure regulator (pressure adjustment part). The APC valve 244 is configured to perform or stop a vacuum exhausting operation in the process chamber 201 by opening/closing the valve while the vacuum pump 246 is actuated, and is also configured to adjust the internal pressure of the process chamber 201 by adjusting an opening degree of the valve based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is actuated. An exhaust system mainly includes the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The exhaust system may include the vacuum pump 246.
A seal cap 219, which serves as a furnace opening cover configured to hermetically seal a lower end opening of the manifold 209, is provided under the manifold 209. The seal cap 219 is made of, for example, a metal material such as SUS, and is formed in a disc shape. An O-ring 220b, which is a seal member making contact with the lower end of the manifold 209, is provided on an upper surface of the seal cap 219. A rotator 267 configured to rotate a boat 217, which will be described later, is installed under the seal cap 219. A rotary shaft 255 of the rotator 267 is connected to the boat 217 through the seal cap 219. The rotator 267 is configured to rotate the wafers 200 by rotating the boat 217. The seal cap 219 is configured to be vertically moved up and down by a boat elevator 115 which is an elevating mechanism installed outside the reaction tube 203. The boat elevator 115 is configured as a transfer device (transfer mechanism) which loads/unloads (transfers) the wafers 200 into/out of the process chamber 201 by moving the seal cap 219 up and down.
A shutter 219s, which serves as a furnace opening cover configured to hermetically seal a lower end opening of the manifold 209 in a state where the seal cap 219 is lowered and the boat 217 is unloaded from the process chamber 201, is provided under the manifold 209. The shutter 219s is made of, for example, a metal material such as SUS, and is formed in a disc shape. An O-ring 220c, which is a seal member making contact with the lower end of the manifold 209, is provided on an upper surface of the shutter 219s. The opening/closing operation (such as elevation operation, rotation operation, or the like) of the shutter 219s is controlled by a shutter opener/closer 115s.
The boat 217 serving as a substrate support is configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in such a state that the wafers 200 are arranged in a horizontal posture and in multiple stages along a vertical direction with the centers of the wafers 200 aligned with one another. That is, the boat 217 is configured to arrange the wafers 200 to be spaced apart from each other. The boat 217 is made of, for example, a heat resistant material such as quartz or SiC. Heat insulating plates 218 made of, for example, a heat resistant material such as quartz or SiC are installed below the boat 217 in multiple stages. In the present disclosure, the notation of a numerical range such as “25 to 200 wafers” means that the lower limit value and the upper limit value are included in the range. Therefore, for example, “25 to 200 wafers” means “25 wafers or more and 200 wafers or less.” The same applies to other numerical ranges.
A temperature sensor 263 serving as a temperature detector is installed in the reaction tube 203. Based on temperature information detected by the temperature sensor 263, a state of supplying electric power to the heater 207 is adjusted such that an interior of the process chamber 201 has a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.
As shown in
The memory 121c is configured by, for example, a flash memory, a hard disk drive (HDD), a solid state drive (SSD), or the like. A control program for controlling operations of a substrate processing apparatus, a process recipe in which sequences and conditions of substrate processing to be described later are written, etc. are readably stored in the memory 121c. The process recipe functions as a program for causing the controller 121 to execute each sequence in the substrate processing, which will be described later, to obtain an expected result. Hereinafter, the process recipe and the control program may be generally and simply referred to as a “program.” Furthermore, the process recipe may be simply referred to as a “recipe.” When the term “program” is used herein, it may indicate a case of including the recipe only, a case of including the control program only, or a case of including both the recipe and the control program. The RAM 121b is configured as a memory area (work area) in which programs or data read by the CPU 121a are temporarily stored.
The I/O port 121d is connected to the MFCs 241a to 241i, the valves 243a to 243i, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the heater 207, the rotator 267, the boat elevator 115, the shutter opener/closer 115s, and so on.
The CPU 121a is configured to read and execute the control program from the memory 121c. The CPU 121a is also configured to read the recipe from the memory 121c according to an input of an operation command from the input/output device 122. The CPU 121a is configured to control the flow rate adjusting operation of various kinds of gases by the MFCs 241a to 241i, the opening/closing operation of the valves 243a to 243g, the opening/closing operation of the APC valve 244, the pressure adjusting operation performed by the APC valve 244 based on the pressure sensor 245, the actuating and stopping operation of the vacuum pump 246, the temperature adjusting operation performed by the heater 207 based on the temperature sensor 263, the operation of rotating the boat 217 with the rotator 267 and adjusting the rotation speed of the boat 217, the operation of moving the boat 217 up and down by the boat elevator 115, the opening/closing operation of the shutter 219s by the shutter opener/closer 115s, and so on, according to contents of the read recipe.
The controller 121 may be configured by installing, on the computer, the aforementioned program recorded and stored in the external memory 123. Examples of the external memory 123 may include a magnetic disk such as a HDD, an optical disc such as a CD, a magneto-optical disc such as a MO, a semiconductor memory such as a USB memory or a SSD, and the like. The memory 121c or the external memory 123 is configured as a non-transitory computer-readable recording medium. Hereinafter, the memory 121c and the external memory 123 may be generally and simply referred to as a “recording medium”. When the term “recording medium” is used herein, it may indicate a case of including the memory 121c only, a case of including the external memory 123 only, or a case of including both the memory 121c and the external memory 123. Furthermore, the program may be provided to the computer using communication means such as the Internet or a dedicated line, instead of using the external memory 123.
As a process of manufacturing a semiconductor device using the above-described substrate processing apparatus, an example of a processing sequence for forming a film on a wafer 200 as a substrate including a recess such as a trench formed on its surface will be described mainly with reference to
A processing sequence in the present embodiment includes:
In the following example, a case will be described in which the first process gas is a gas (film-forming gas) including a first precursor gas and a first reaction gas and the second process gas is a gas (film-forming gas) including a second precursor gas and a second reaction gas. Here, the second precursor gas is a gas that is more readily adsorbed on the surface of the wafer 200 than the first precursor gas under the same conditions. Further, in the following example, a case will be described in which the first precursor gas containing the first element and the first reaction gas are supplied as the first process gas containing the first element and the second precursor gas containing the second element and the second reaction gas are supplied as the second process gas containing the second element.
Further, in the following example, a case will be described in which the first modifying gas is a gas (film-formation-inhibiting gas) that inhibits the reaction between the first process gas (first precursor gas and/or first reaction gas) and the surface of the wafer 200, and the second modifying gas is a gas (film formation inhibiting gas) that inhibits the reaction between the second process gas (second precursor gas and/or second reaction gas) and the surface of the wafer 200.
Further, in the following, as a typical example, as shown in
In this embodiment, a case will be described in which the first film formation and the second film formation are performed once respectively to form a laminated film. Here, the laminated film may be a film containing the first element and the second element. Further, the laminated film formation may be the formation of a film containing the first element and the second element.
In the present disclosure, for the sake of convenience, the processing sequence shown in
(First modifying gas→First precursor gas→First reaction gas)×n1→(Second modifying gas→Second precursor gas→Second reaction gas)×n2
When the term “wafer” is used in the present disclosure, it may refer to “a wafer itself” or “a wafer and a stacked body of certain layers or films formed on a surface of the wafer.” When the phrase “a surface of a wafer” is used in the present disclosure, it may refer to “a surface of a wafer itself” or “a surface of a certain layer formed on a wafer.” When the expression “a certain layer is formed on a wafer” is used in the present disclosure, it may mean that “a certain layer is formed directly on a surface of a wafer itself” or that “a certain layer is formed on a layer formed on a wafer.” When the term “substrate” is used in the present disclosure, it may be synonymous with the term “wafer”.
The term “layer” used in the present disclosure includes at least one of a continuous layer or a discontinuous layer. A layer formed in each step to be described later may include a continuous layer, a discontinuous layer, or both of them.
After the boat 217 is charged with a plurality of wafers 200 (wafer charging), the shutter 219s is moved by the shutter opener/closer 115s and the lower end opening of the manifold 209 is opened (shutter open). Thereafter, as shown in
After the boat loading is completed, the interior of the process chamber 201, that is, a space where the wafers 200 are placed, is vacuum-exhausted (decompression-exhausted) by the vacuum pump 246 to reach a desired pressure (degree of vacuum). At this time, the internal pressure of the process chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. Further, the wafers 200 in the process chamber 201 are heated by the heater 207 to have a desired processing temperature. At this time, the state of supplying electric power to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the interior of the process chamber 201 has a desired temperature distribution. Further, the rotation of the wafers 200 by the rotator 267 is started. The exhaust of the interior of the process chamber 201 and the heating and rotation of the wafers 200 are continuously performed at least until the processing on the wafers 200 is completed.
In the first film formation, the following steps A1, A2, and A3 are performed.
In step A1, a first modifying gas is supplied to the wafer 200 in the process chamber 201.
Specifically, the valve 243a is opened to allow the first modifying gas to flow into the gas supply pipe 232a. The flow rate of the first modifying gas is adjusted by the MFC 241a, and the first modifying gas is supplied into the process chamber 201 via the nozzle 249a and is exhausted through the exhaust port 231a. In this operation, the first modifying gas is supplied to the wafer 200 (first modifying gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the first modifying gas to the wafer 200 under the process conditions to be described later, the first modifying gas is adsorbed on the surface of the wafer 200, thereby modifying at least a portion of the surface of the wafer 200. Further, by supplying the first modifying gas to the wafer 200 under the process conditions to be described later, the first modifying gas can be less likely to be adsorbed on the surface of the wafer 200 than a second modifying gas under the same conditions. Further, by supplying the first modifying gas to the wafer 200 under the process conditions to be described later, the amount of the first modifying gas adsorbed on the deep side 302 of a recess 300 can be made smaller than the amount of the first modifying gas adsorbed on the opening side 301 thereof (see
The process conditions for supplying the first modifying gas in step A1 are exemplified as follows:
In the present disclosure, the processing temperature means the temperature of the wafer 200 or the internal temperature of the process chamber 201, and the processing pressure means the internal pressure of the process chamber 201. Further, the supply flow rate of 0 slm means a case where no gas is supplied. These apply equally to the following description.
As the first modifying gas, for example, a gas containing halogen may be used. The halogen includes at least one selected from the group of chlorine (Cl), fluorine (F), bromine (Br), and iodine (I). Examples of the first modifying gas may include a fluorine (F2) gas, a chlorine (Cl2) gas, a bromine (Br2) gas, an iodine (I2) gas, a nitrogen fluoride (NF3) gas, a chlorine fluoride (ClF3) gas, a hydrogen fluoride (HF) gas, a hydrogen chloride (HCl) gas, a hydrogen bromide (HBr) gas, and a hydrogen iodide (HI) gas. One or more of these gases may be used as the first modifying gas.
Further, as the first modifying gas, for example, a halosilane gas containing silicon (Si) and halogen may be used. As the halosilane gas, for example, a chlorosilane gas containing Si and Cl, such as a dichlorosilane (SiH2Cl2) gas, a trichlorosilane (SiHCl3) gas, a tetrachlorosilane (SiCl4), a pentachlorodisilane (Si2H1Cl5), and a hexachlorodisilane (Si2Cl6) gas, may be used. One or more of these gases may be used as the first modifying gas.
Further, as the first modifying gas, a gas containing an organic compound may be used. As the gas containing an organic compound, a gas containing at least one selected from the group consisting of an ether compound, a ketone compound, an amine compound, and an organic hydrazine compound may be used. As the gas containing an ether compound, a gas containing at least one selected from the group of dimethylether, diethylether, methylethylether, propylether, isopropylether, furan, tetrahydrofuran, pyran, tetrahydropyran, etc. may be used. As the gas containing a ketone compound, a gas containing at least one selected from the group of dimethylketone, diethylketone, methylethylketone, methylpropylketone, etc. may be used. As the gas containing an amine compound, a gas containing at least one selected from the group of a methylamine compound such as monomethylamine, dimethylamine, or trimethylamine, an ethylamine compound such as monoethylamine, diethylamine, or triethylamine, and a methylethylamine compound such as dimethylethylamine or methyldiethylamine may be used. As the gas containing an organic hydrazine compound, a gas containing at least one selected from the group of methylhydrazine-based gases such as monomethylhydrazine, dimethylhydrazine, and trimethylhydrazine may be used. One or more of these gases may be used as the first modifying gas.
As the inert gas, a nitrogen (N2) gas or a rare gas such as an argon (Ar) gas, a helium (He) gas, a neon (Ne) gas, a xenon (Xe) gas, or the like may be used. This point also applies to each step to be described later. One or more of these gases may be used as the inert gas.
After the first modifying gas is adsorbed on the surface of the wafer 200 (the surface inside the recess 300), the valve 243a is closed to stop the supply of the first modifying gas into the process chamber 201. Then, the interior of the process chamber 201 is vacuum-exhausted to remove a gaseous substance and the like remaining in the process chamber 201 from the interior of the process chamber 201. At this time, the valves 243g to 243i are opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c. The inert gas supplied from the nozzles 249a to 249c acts as a purge gas, whereby a space where the wafer 200 is placed, that is, the interior of the process chamber 201, is purged (purging).
After step A1 is completed, a first precursor gas containing a first element is supplied to the wafer 200 in the process chamber 201, that is, the wafer 200 after the first modifying gas has been adsorbed on the surface of the recess 300.
Specifically, the valve 243d is opened to allow the first precursor gas to flow into the gas supply pipe 232d. The flow rate of the first precursor gas is adjusted by the MFC 241d, and the first precursor gas is supplied into the process chamber 201 via the gas supply pipe 232a and the nozzle 249a and is exhausted through the exhaust port 231a. In this operation, the first precursor gas is supplied to the wafer 200 (first precursor gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the first precursor gas containing the first element to the wafer 200 under the process conditions to be described later, the first precursor gas can be adsorbed on locations of the surface of the wafer 200 (the surface inside the recess 300) where the first modifying gas is not adsorbed (see
The process conditions for supplying the first precursor gas in step A2 are exemplified as follows:
After forming the first element-containing layer on the surface of the wafer 200 (the surface inside the recess 300), the valve 243d is closed to stop the supply of the first precursor gas into the process chamber 201. Then, a gaseous substance and the like remaining in the process chamber 201 are removed from the interior of the process chamber 201 (purging) according to the same processing procedure and process conditions as those for purging in step A1.
After step A2 is completed, a first reaction gas is supplied to the wafer 200 in the process chamber 201, that is, the wafer 200 after the first element-containing layer has been formed on the surface inside the recess 300.
Specifically, the valve 243c is opened to allow the first reaction gas to flow into the gas supply pipe 232c. The flow rate of the first reaction gas is adjusted by the MFC 241c, and the first reaction gas is supplied into the process chamber 201 via the nozzle 249c and is exhausted through the exhaust port 231a. In this operation, the first reaction gas is supplied to the wafer 200 (first reaction gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the first reaction gas to the wafer 200 after forming the first element-containing layer under the process conditions shown below, at least a portion of the first element-containing layer is caused to react with the first reaction gas, which makes it possible to form a first modified layer by modifying the first element-containing layer.
The process conditions for supplying the first reaction gas in step A3 are exemplified as follows:
As the first reaction gas, for example, an oxygen (O)-containing gas such as an oxygen (O2) gas, an ozone (O3) gas, a hydrogen (H2) gas+oxygen (O2) gas, an oxygen radical (O2*), or the like may be used. In the present disclosure, the description of two gases such as “H2 gas+O2 gas” together means a mixed gas of H2 gas and O2 gas. When supplying the mixed gas, the two gases may be mixed (pre-mixed) in a supply pipe and then supplied into the process chamber 201, or the two gases may be supplied separately from different supply pipes into the process chamber 201 and then mixed (post-mixed) in the process chamber 201. One or more of these gases may be used as the first reaction gas.
After the first element-containing layer formed inside the recess 300 is changed into the first modified layer, the valve 243c is closed to stop the supply of the first reaction gas into the process chamber 201. Then, a gaseous substance and the like remaining in the process chamber 201 are removed from the interior of the process chamber 201 (purging) according to the same processing procedure and process conditions as those for purging in step A1.
By performing a cycle n1 times (n1 is an integer of 1 or 2 or more), the cycle including non-simultaneously, that is, non-synchronously, performing steps A1, A2, and A3 in this order, it is possible to form a first film on the surface of the wafer 200 (see
In the second film formation, the following steps B1, B2, and B3 are performed.
In step B1, a second modifying gas is supplied to the wafer 200 on which the first film has been formed.
Specifically, the valve 243b is opened to allow the second modifying gas to flow into the gas supply pipe 232b. The flow rate of the second modifying gas is adjusted by the MFC 241b, and the second modifying gas is supplied into the process chamber 201 via the nozzle 249b and is exhausted through the exhaust port 231a.In this operation, the second modifying gas is supplied to the wafer 200 (second modifying gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the second modifying gas to the wafer 200 under the process conditions to be described later, the second modifying gas is adsorbed on the surface of the first film, thereby modifying at least a portion of the surface of the first film. Further, by supplying the second modifying gas to the wafer 200 under the process conditions to be described later, the second modifying gas can be more readily adsorbed on the surface of the wafer 200 than the first modifying gas under the same conditions. By supplying the second modifying gas to the wafer 200 under the process conditions to be described later, the amount of the second modifying gas adsorbed on the deep side 302 of the recess 300 can be made smaller than the amount of the second modifying gas adsorbed on the opening side 301 of the recess 300 (see
The process conditions for supplying the second modifying gas in step B1 are exemplified as follows:
At this time, for the reason to be described later, it is preferable to set the conditions of step A1 and step B1 so that the second modifying gas is more readily adsorbed on the surface of the wafer 200 than the first modifying gas under the same conditions. For example, it is preferable to set the pressure (processing pressure) in the space where the wafer 200 is placed in step B1 to be lower than the processing pressure in step A1. Further, for example, it is preferable to set the time for supplying the second modifying gas to the wafer 200 in step B1 to be shorter than the time for supplying the first modifying gas to the wafer 200 in step A1. Further, for example, it is preferable to set the partial pressure of the second modifying gas in the space where the wafer 200 is placed (inside the process chamber 201) in step B1 to be lower than the partial pressure of the first modifying gas in the process chamber 201 in step A1.
As the second modifying gas, a predetermined gas arbitrarily selected from the first modifying gases exemplified in step A1 may be used. Note that the second modifying gas used in step B1 and the first modifying gas used in step A1 may be the same gas (gas with the same molecular structure) or different gases (gas with different molecular structures). When the first modifying gas and the second modifying gas are the same gas, the configuration of the gas supply system can be simplified.
When using a gas different from the first modifying gas as the second modifying gas, the gas types of the first modifying gas and the second modifying gas may be selected so that the adsorption capacity of the second modifying gas on the surface of the wafer 200 is higher than the adsorption capacity of the first modifying gas. This allows the second modifying gas to be more readily adsorbed on the surface of the wafer 200 than the first modifying gas under the same conditions, which is preferable for the reasons to be described later. For example, it is preferable to use the second modifying gas having a larger molecular weight than the first modifying gas. Further, for example, it is preferable to use the second modifying gas having a larger molecular radius than the first modifying gas. Further, for example, it is preferable to use the second modifying gas having higher reactivity to the surface of the wafer 200 than the first modifying gas under the same conditions. Further, for example, it is preferable that the second precursor gas be a gas that chemically reacts with adsorption sites on the surface of the wafer 200 and that the first precursor gas be a gas that physically adsorbs with the adsorption sites on the surface of the wafer 200. As a result, the amount of the second modifying gas adsorbed on the deep side 302 of the recess 300 can be easily made smaller than the amount of the first modifying gas adsorbed on the deep side 302 of the recess 300 in step A1. Here, the “adsorption capacity of a gas on the surface of the wafer 200” refers to the ease with which the gas can be adsorbed on the opening side 301 of the wafer 200. For example, when using an organic gas and an inorganic gas as the first precursor gas and the second precursor gas, an organic gas and an inorganic gas may be used as the first modifying gas and the second modifying gas in line with these.
After adsorbing the second modifying gas, the valve 243b is closed to stop the supply of the second modifying gas into the process chamber 201. Then, a gaseous substance and the like remaining in the process chamber 201 are removed from the interior of the process chamber 201 (purging) according to the same processing procedure and process conditions as those for purging in step A1.
After step B1 is completed, a second precursor gas containing a second element is supplied to the wafer 200 in the process chamber 201, that is, the wafer 200 after the second modifying gas has been adsorbed on the surface of the recess 300.
Specifically, the valve 243e is opened to allow the second precursor gas to flow into the gas supply pipe 232e. The flow rate of the second precursor gas is adjusted by the MFC 241e, and the second precursor gas is supplied into the process chamber 201 via the gas supply pipe 232b and the nozzle 249b and is exhausted through the exhaust port 231a. In this operation, the second precursor gas is supplied to the wafer 200 (second precursor gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the second precursor gas containing the second element to the wafer 200 under the process conditions to be described later, the second precursor gas can be adsorbed on locations of the surface of the wafer 200 (the surface of the first film inside the recess 300) where the second modifying gas is not adsorbed (see
The process conditions for supplying the second precursor gas in step B2 are exemplified as follows:
Note that the first element contained in the first precursor gas and the second element contained in the second precursor gas may be the same element or may be different elements.
After forming the second element-containing layer on the first film, the valve 243e is closed to stop the supply of the second precursor gas into the process chamber 201. Then, a gaseous substance and the like remaining in the process chamber 201 are removed from the interior of the process chamber 201 (purging) according to the same processing procedure and process conditions as those for purging in step A1.
After step B2 is completed, a second reaction gas is supplied to the wafer 200 in the process chamber 201, that is, the wafer 200 after the second element-containing layer has been formed on the surface inside the recess 300.
Specifically, the valve 243f is opened to allow the second reaction gas to flow into the gas supply pipe 232f. The flow rate of the second reaction gas is adjusted by the MFC 241f, and the second reaction gas is supplied into the process chamber 201 via the gas supply pipe 232c and the nozzle 249c and is exhausted through the exhaust port 231a. In this operation, the second reaction gas is supplied to the wafer 200 (second reaction gas supply). At this time, the valves 243g to 243i may be opened to allow an inert gas to be supplied into the process chamber 201 via the nozzles 249a to 249c, respectively.
By supplying the second reaction gas to the wafer 200 after forming the second element-containing layer under the process conditions shown below, at least a portion of the second element-containing layer is caused to react with the second reaction gas, which makes it possible to form a second modified layer by modifying the second element-containing layer.
The process conditions for supplying the second reaction gas in step B3 are exemplified as follows:
As the second reaction gas, a predetermined gas arbitrarily selected from the first reaction gases exemplified in step A2 may be used. Note that the second reaction gas used in step B3 and the first reaction gas used in step A3 may have the same molecule structure or different molecular structures.
By performing a cycle n2 times (n2 is an integer of 1 or 2 or more), the cycle including non-simultaneously, that is, non-synchronously, performing steps B1, B2, and B3 in this order, it is possible to form a second film on the surface of the wafer 200 (see
By performing the cycle n1 times (the first number of times), the cycle including performing steps A1, A2, and A3 in this order to form the first film and performing the cycle n2 times (the second number of times), the cycle including performing steps B1, B2, and B3 in this order to form the second film, a laminated film, which is formed by laminating the first film and the second film in this order, can be formed on the surface of the wafer 200.
After the formation of the laminated film is completed, an inert gas acting as a purge gas is supplied into the process chamber 201 from each of the nozzles 249a to 249c and is exhausted through the exhaust port 231a. Thus, the interior of the process chamber 201 is purged and a gas, reaction by-products, and the like remaining in the process chamber 201 are removed from the interior of the process chamber 201 (after-purging). After that, the internal atmosphere of the process chamber 201 is substituted with an inert gas (inert gas substitution) and the internal pressure of the process chamber 201 is returned to the atmospheric pressure (returning to atmospheric pressure).
After that, the seal cap 219 is moved down by the boat elevator 115 to open the lower end of the manifold 209. Then, the processed wafers 200 supported by the boat 217 are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After the boat unloading, the shutter 219s is moved and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). The processed wafers 200 are unloaded from the reaction tube 203 and are then discharged from the boat 217 (wafer discharging).
According to the present embodiment, in addition to the above-described effects, one or more effects set forth below may be achieved.
As described above, in step B2, the second precursor gas, which is more readily adsorbed on the opening side 301 than the first precursor gas under the same conditions, is supplied to the wafer 200. Further, the gas supplied to the wafer 200 including the recess 300 tends to easily reach (adsorb on) the opening side 301 and hardly reach (adsorb on) the deep side 302. For this reason, the amount of the second precursor gas adsorbed on the opening side 301 tends to be larger and the amount of the second precursor gas adsorbed on the deep side 302 tends to be smaller than the amount of the first precursor gas supplied under the same conditions. Therefore, for example, if the first modifying gas and the second modifying gas are adsorbed to the same extent on the deep side 302, since the thickness of the second film on the deep side 302 tends to be smaller than the thickness of the first film, the step coverage of the second film is more likely to decrease than the step coverage of the first film. Therefore, the amount of the second modifying gas adsorbed on the deep side 302 is preferably smaller than the amount of the first modifying gas adsorbed on the deep side 302. Further, when the step coverage of the second film decreases, the step coverage of the laminated film formed by the first film and the second film also decreases.
In this embodiment, in step B1, the conditions are such that the second modifying gas is more readily adsorbed on the surface of the wafer 200 than the first modifying gas under the same conditions. As a result, the amount of the second modifying gas adsorbed on the deep side 302 in step BI can be made smaller than the amount of the first modifying gas adsorbed on the deep side 302 in step A1. That is, the second modifying gas is preferentially adsorbed on the opening side 301 (see
Further, since the process gas (the precursor gas or the reaction gas) is more difficult to reach the deep side 302 of the recess 300 than the opening side 301 of the recess 300, the amount of the process gas adsorbed on the deep side 302 is smaller than the amount of the process gas adsorbed on the opening side 301. Therefore, if the second modifying gas is adsorbed on the deep side 302, this will lead to an overall delay in the formation of the second film. In this embodiment, as described above, the second modifying gas is preferentially adsorbed on the opening side 301. In other words, the amount of the second modifying gas adsorbed on the deep side 302 is reduced. Therefore, even when a gas that inhibits the adsorption of the process gas is used, it is possible to suppress a decrease in the deposition rate of the second film on the deep side 302. This leads to suppressing a decrease in the deposition rates of the second film and the laminated film. However, it is preferable to set the supply conditions of the second modifying gas in step B1 so that the step coverage of the second film is not adversely affected by excessive adsorption of the second modifying gas on the opening side 301.
The various embodiments of the present disclosure have been specifically described above. However, the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof.
For example, in the above-described embodiments, a case has been described in which after the first film is formed, the second film is formed to form the laminated film. That is, the case has been described in which after performing the cycle n1 times, the cycle including performing steps A1, A2, and A3 in this order, the cycle including performing steps B1, B2, and B3 in this order is performed n2 times to form a film containing the first element and the second element. However, the present disclosure is not limited to these embodiments. For example, after the second film is formed, the first film may be formed to form the laminated film. That is, after performing the cycle n2 times, the cycle including performing steps B1, B2, and B3 in this order, the cycle including performing steps A1, A2, and A3 in this order may be performed n1 times to form a film containing the first element and the second element. Also in these cases, the same effects as in the above-described embodiments can be obtained.
For example, in the above-described embodiments, a case has been described in which the laminated film constituted by the first film containing the first element and the second film containing the second element is formed. However, the present disclosure is not limited to this embodiment. For example, one gas, which is less likely to be adsorbed on the surface of the wafer 200, of a first gas containing the first element and a second gas containing the second element may be set as a first process gas, the other gas of the first gas containing the first element and the second gas containing the second element may be set as a second process gas, and a film containing the first element and the second element (a film mainly containing the first element and the second element) may be formed. For example, of a tetrachlorotitanium (TiCl4) gas containing titanium (Ti), which is a metal element, and an ammonia (NH3) gas containing nitrogen (N), the NH3 gas, which is less likely to be adsorbed on the surface of the wafer 200, may be used as the first process gas (reaction gas), and the TiCl4 gas may be used as the second process gas (precursor gas). In this case, the first element is N, the second element is Ti, and a titanium nitride film (TiN film) is formed as a film containing the first element and the second element. That is, one of the first process gas and the second process gas may be a precursor gas, and the other gas may be a reaction gas. In this case, as the precursor gas, gases exemplified as the first precursor gas and the second precursor gas may be used as will be described later. Further, as the reaction gas, gases exemplified as the first reaction gas and the second reaction gas may be used as will be described later. Also in this case, the same effects as in the above-described embodiments can be obtained.
For example, in the above-described embodiments, a case has been described in which the first film formation and the second film formation are performed once respectively to form the laminated film. However, the present disclosure is not limited to this embodiment. For example, the first film formation and the second film formation may be alternately performed a plurality of times to form the laminated film. Even in this case, the same effects as in the above-described embodiments can be obtained. Here, the laminated film formed by laminating the first film containing the first element and the second film containing the second element may be a film containing the first element and the second element.
For example, in the above-described embodiments, a case has been described as an example in which both the first reaction gas and the second reaction gas are the O-containing gas. However, the present disclosure is not limited to this embodiment. For example, in addition to the O-containing gas, the first reaction gas and the second reaction gas may be a nitrogen (N)-containing gas, a carbon (C)-containing gas such as an organic gas, a hydrogen (H)-containing gas such as a H2 gas, and a mixture of these gases. Examples of the N-containing gas may include nitrogen-containing gases containing N-H bonds (N- and H-containing gases) such as an ammonia (NH3) gas, a hydrazine (N2H4) gas, a diazene (N2H2) gas, and a N3H8 gas, and a N2 gas. By supplying these gases to the wafer 200, for example, a metal film, a metal nitride film, a metal carbide film, a metal oxynitride film, a metal oxycarbide film, a metal carbonitride film, or a metal oxycarbonitride film may be formed as the first film and/or the second film, or the laminated film. Even in these cases, the same effects as in the above-described embodiments can be obtained.
When the first element and the second element are, for example, Si, a gas containing, for example, halogen and Si, that is, a halosilane-based gas, may be used as the first precursor gas and the second precursor gas. The halogens include chlorine (Cl), fluorine (F), bromine (Br), iodine (I), and the like. As the halosilane-based gas, for example, the above-mentioned chlorosilane-based gas containing Cl and Si may be used.
Examples of the first precursor gas and/or the second precursor gas may include gases containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), silicon (Si), and germanium (Ge), as the first element and/or the second element. As the gas containing the metal element, a gas containing a molecule having a metal element and a ligand bonded thereto, such as trimethylaluminum (Al(CH3)3) gas, may be used. An example of the ligand may include an organic ligand, preferably a hydrocarbon group containing at least one selected from the group consisting of an alkyl group such as a methyl group, an ethyl group, a propyl group, or a butyl group, a cyclopentadienyl group, a cyclohexadienyl group, and a cycloheptatrienyl group.
Here, as the first precursor gas and/or the second precursor gas containing Zr, for example, a gas containing at least one selected from the group consisting of tetrakisethylmethylaminozirconium (Zr[N(CH3)C2H5]4), tetrakisdiethylaminozirconium (Zr[N(C2H5)2]4), tetrakisdimethylaminozirconium (Zr[N(CH3)2]4), Zr(MMP)4, Zr(O-tBu)4, and trisdimethylaminocyclopentadienylzirconium ((C5H5)Zr[N(CH3)2]3) may be used. One or more of these may be used as the first precursor gas and/or the second precursor gas.
Further, as the gas containing Hf as the first element and/or the second element, for example, a gas containing at least one selected from the group consisting of tetrakisethylmethylaminohafnium (Hf[N(CH3)C2H5]4), tetrakisdiethylaminohafnium (Hf[N(C2H5)2]4), tetrakisdimethylaminohafnium (Hf[N(CH3)2]4), Hf(O-tBu)4, Hf(MMP)4, and trisdimethylaminocyclopentadienylhafnium ((C5H5)Hf[N(CH3)2]3) may be used. One or more of these may be used as the first precursor gas and/or the second precursor gas.
Further, as the gas containing Ti as the first element and/or second element, for example, a gas containing at least one selected from the group consisting of tetrakisethylmethylaminotitanium (Ti[N(CH3)C2H5]4), tetrakisdiethylaminotitanium (Ti[N(C2H5)2]4), tetrakisdimethylaminotitanium (Ti[N(CH3)2]4), Ti(O-tBu)4, Ti(MMP)4, and trisdimethylaminocyclopentadienyltitanium ((C5H5)Ti[N(CH3)2]3) may be used. One or more of these may be used as the first precursor gas and/or the second precursor gas.
Further, as the first precursor gas and/or the second precursor gas, for example, inorganic metal precursor gases containing a metal element and a halogen element, such as a titanium tetrachloride (TiCl4) gas, a titanium tetrafluoride (TiF4) gas, a zirconium tetrachloride (ZrCl4) gas, a zirconium tetrafluoride (ZrF4) gas, a hafnium tetrachloride (HfCl4) gas, a hafnium tetrafluoride (HfF4) gas, a tantalum pentachloride (TaCl5) gas, a tantalum pentafluoride (TaF5) gas, a niobium pentachloride (NbCl5) gas, a niobium pentafluoride (NbF5) gas, an aluminum trichloride (AlCl3) gas, an aluminum trifluoride (AlF3) gas, a molybdenum pentachloride (MoCl5) gas, a molybdenum pentafluoride (MoF5) gas, a tungsten hexachloride (WCl6) gas, and tungsten hexafluoride (WF6) gas, may also be used. One or more of these may be used as the first precursor gas and/or the second precursor gas.
Further, as the gas containing Si as the first element and/or the second element, for example, silane-based gases such as a monosilane (SiH4) gas, a disilane (Si2H6) gas, and a trisilane (Si3H8) gas may be used. Further, the above-mentioned halosilane gas may also be used. One or more of these gases may be used as the first precursor gas and/or the second precursor gas.
As described above, the second precursor gas (second process gas) is a gas that is more readily adsorbed on the surface of the wafer 200 than the first precursor gas (first process gas) under the same conditions. Such a relationship is likely to be established, for example, when a gas having higher reactivity to the surface of the wafer 200 than the first precursor gas under the same conditions is used as the second precursor gas. Further, this relationship is also likely to be established, for example, when a gas containing a functional group having higher reactivity to adsorption sites present on the surface of the wafer 200 than the first precursor gas under the same conditions is used as the second precursor gas. Further, this relationship is likely to be established, for example, when a gas that does not have a cyclic structure in molecules is used as the first precursor gas and a gas that has a cyclic structure (for example, a five-membered carbocyclic structure) in molecules is used as the second precursor gas. Further, this relationship is likely to be established when a gas containing more ligands than the first precursor gas is used as the second precursor gas. Further, a gas having a larger molecular weight may be more likely to be adsorbed on the surface of the wafer 200 due to a Van der Waals force with the surface of the wafer 200. From this, even when a gas having a molecular weight larger than that of the first precursor gas is used as the second precursor gas, the second precursor gas may be more likely to be adsorbed on the surface of the wafer 200 than the first precursor gas under the same conditions.
For example, in the above-described embodiments, a case has been described in which the first process gas includes the first precursor gas containing the first element and the first reaction gas and the second process gas includes the second precursor gas containing the second element and the second reaction gas. However, the present disclosure is not limited to this embodiment. For example, the first process gas may not include the first reaction gas, and the second process gas may not include the second reaction gas. In other words, in the first film formation, it is not necessary to perform the first reaction gas supplying step (step A3), and in the second film formation, it is not necessary to perform the second reaction gas supplying step (step B3). Even in these cases, the same effects as in the above-described embodiments can be obtained.
For example, in the above-described embodiments, a case has been described in which the first modifying gas is supplied once in step A1. However, the present disclosure is not limited to this embodiment. For example, in step A1, the interior of the process chamber 201 may be purged or vacuum-exhausted, and the first modifying gas may be supplied in multiple steps. Even in this case, the same effects as in the above-embodiments can be obtained. The same applies to the supply of the first precursor gas, the supply of the first reaction gas, the supply of the second modifying gas, the supply of the second precursor gas, and the supply of the second reaction gas in steps A2, A3, B1, B2, and B3, respectively.
For example, in the above-described embodiments, a case has been described in which steps A1, A2, and A3 are performed in this order a predetermined number of times in the first film formation. However, the present disclosure is not limited to this embodiment. For example, after steps A1, A2, and A3 are performed a predetermined number of times, only steps A2 and A3 may be performed a predetermined number of times. Even in this case, the same effects as in the above-described embodiments can be obtained. The same applies to the second film formation (steps B1, B2, and B3).
For example, in step B1, while setting the partial pressure of the second modifying gas to be lower than the partial pressure of the first modifying gas in step A1, the supply time of the second modifying gas may be set to be longer than the supply time of the first modifying gas in step A1. By doing so, it is possible to increase the amount of the second modifying gas adsorbed on the opening side 301 while suppressing an increase in the amount of the second modifying gas adsorbed on the deep side 302. Therefore, the effects of the above-described embodiments can be further enhanced.
For example, it is preferable to set the supply flow rate of the second modifying gas in step B1 to be smaller than the supply flow rate of the first modifying gas in step A1 (see
For example, in the above-described embodiments, as shown in
For example, in the above-described embodiments, a case has been described in which a film containing the first element and the second element is formed on the surface of the recess 300 formed in the wafer 200. However, the present disclosure is not limited to this embodiment. For example, the inside of the recess 300 may be filled with the film containing the first element and the second element by forming the film containing the first element and the second element a predetermined number of times (once or more) (filling film formation or bottom-up film formation). In this case, the amount and size of voids (seams) present in the film can be reduced.
Further, for example, in the above-described embodiments, a case has been described in which a film containing the first element and the second element is formed on the surface of the recess 300 provided in the wafer 200. However, the present disclosure is not limited to this embodiment. For example, if the wafer 200 includes a first surface and a second surface different from the first surface and the second process gas (the second precursor gas and/or the second reaction gas) is a gas that is more readily adsorbed on the first surface than the first process gas (the first precursor gas and/or the first reaction gas) under the same conditions, a step of supplying a gas corresponding to each of the first modifying gas, the first process gas, the second modifying gas, and the second process gas may be performed to selectively form a film containing the first element and the second element on the second surface. In this case, step B1 is performed under the conditions in which the second modifying gas is more readily adsorbed on the first surface than the first modifying gas under the same conditions. As a result, formation of a film on the first surface, that is, selectivity loss, can be suppressed.
Recipes used in each process may be prepared individually according to the processing contents and may be recorded and stored in the memory 121c via a telecommunication line or the external memory 123. Moreover, at the beginning of each process, the CPU 121a may properly select an appropriate recipe from the recipes recorded and stored in the memory 121c according to the processing contents. Thus, it is possible for a single substrate processing apparatus to form films of various kinds, composition ratios, qualities, and thicknesses with enhanced reproducibility. Further, it is possible to reduce an operator's burden and to quickly start each process while avoiding an operation error.
The recipes mentioned above are not limited to newly-prepared ones but may be prepared, for example, by modifying existing recipes that are already installed in the substrate processing apparatus. Once the recipes are modified, the modified recipes may be installed in the substrate processing apparatus via a telecommunication line or a recording medium storing the recipes. In addition, the existing recipes already installed in the existing substrate processing apparatus may be directly modified by operating the input/output device 122 of the substrate processing apparatus.
An example in which a film is formed using a batch-type substrate processing apparatus capable of processing a plurality of substrates at a time has been described in the above-described embodiments. The present disclosure is not limited to the above-described embodiments, but may be suitably applied, for example, to a case where a film is formed using a single-wafer type substrate processing apparatus capable of processing a single substrate or several substrates at a time. In addition, an example in which a film is formed using a substrate processing apparatus provided with a hot-wall-type process furnace has been described in the above-described embodiments. The present disclosure is not limited to the above-described embodiments, but may be suitably applied to a case where a film is formed using a substrate processing apparatus provided with a cold-wall-type process furnace. Even in the case of using these substrate processing apparatuses, each process may be performed according to the same processing procedures and process conditions as those in the above-described embodiments and modifications, and the same effects as in the above-described embodiments and modifications are achieved.
The above-described embodiments and modifications may be used in proper combination. The processing procedures and process conditions used in this case may be the same as, for example, the processing procedures and process conditions in the above-described embodiments and modifications.
According to the present disclosure in some embodiments, it is possible to improve the step coverage of a film formed on a substrate.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2023-027702 | Feb 2023 | JP | national |
