Hybrid bonding interconnect (HBI) is a relatively new type of solderless interconnect that enables a relatively tight interconnect pitch on the order of less than 9 micrometers (μm) and, therefore, significantly increases bandwidth density between die such that 100 million interconnects per square millimeter (mm2) is achievable with hybrid bonding (HB). The tighter die interconnect pitch can necessitate significantly higher placement accuracy during a bond operation. HBI can be implemented on a wafer-to-wafer (W2 W) or die-to-wafer (D2 W) level, and the bond can be accomplished by a room temperature dielectric bond subsequently followed by an anneal operation to form electrical joints.
During die-to-wafer or die-to-die (D2D) bonding, semiconductor chips are placed at specific locations on a target wafer (single wafer or reconstituted wafer, or a stacked wafer) or on a target die with a bond head nozzle assembly at room temperature. Upon placement, the dielectric surfaces on the two bonding interfaces bond together due to Van der Waals forces. Further, as a result of a post-bond anneal, the dielectrics form strong covalent bonds, and the metals form electrical joints between the two interfaces as a result of creep. The shape (bow/warpage) of a die/chiplet being bonded can play a significant role in a presence of voids between the two interfaces. In addition, as HB interconnect pitch is reduced to less than 1 μm to enable relatively higher interconnect densities, a die shape (bow/warpage) and inherent stresses can impact an interconnect pad overlap/overlay between the bonding interfaces and, thus, may lead to HB scaling errors at a die level.
In general, the same reference numbers will be used throughout the drawing(s) and accompanying written description to refer to the same or like parts. The figures are not necessarily to scale. Instead, the thickness of the layers or regions may be enlarged in the drawings. Although the figures show layers and regions with clean lines and boundaries, some or all of these lines and/or boundaries may be idealized. In reality, the boundaries and/or lines may be unobservable, blended, and/or irregular.
Methods and apparatus for die-shape bonding are disclosed. Hybrid bonding interconnect (HBI) is a relatively new type of solderless interconnect that enables a relatively tight interconnect pitch with hybrid bonding (HB). The tighter die interconnect pitch can necessitate significantly higher placement accuracy. In wafer-to-wafer (W2 W) bonding systems, top and bottom wafers are brought into close proximity and then a piston “push-pin” presses down at a center of the top wafer, thereby initiating contact and bond wave propagation. Due to this microscopic stretching of the top wafer with respect to the base wafer, a runout error that increases radially outward to a wafer edge can occur. The error can become more pronounced as an HB pitch decreases, which results in the pad size becoming smaller and increasing interconnect density.
To counter this runout effect, W2 W bonders have a mechanism called runout compensation, which can slightly stretch the base wafer, in the opposite direction as the top wafer, with mechanical processes utilizing multiple relatively small vacuum zones, which cancels the runout overlay error. In addition, a top chuck utilizes numerous small vacuum zones (e.g., zones that are concentrically arranged relative to one another) while a bottom chuck also includes numerous vacuum zones (e.g., vacuum zones arranged in radial slices).
In contrast to W2 W systems, die-to wafer (D2 W) bonders pick up die from a carrier (e.g., wafer, mylar, glass etc.) and align them to a target wafer for placement thereon. D2 W bonders can modulate bond force to a certain limited extent. Known D2 W bonders have a relatively little degree of control with respect to different types of die having different warpages/shape/stress profiles and will have an impact not only on overlay error when placing the die but also on die level bond wave propagation which could result in voids. In known systems, to compensate for differing die thicknesses/shapes/warpage/stresses, procuring bond head collaterals from vendors is necessitated, which can be costly and can also become obsolete once a new die design is introduced. Layer stack variation, multiple different chiplets per product, and chiplets sourced from different foundries (with different nodes, different metal and dielectric stacks, and different sizes, warpages, stresses, etc.) can introduce variance. Thus, a same bond head collateral may not be feasible for different chiplets, thereby resulting in significant cost and throughput implications caused by collateral changeover times, etc. Furthermore, with increased pitch reduction, runout can significantly impact overlay error at edges of a die during bonding, which can become critical for relatively larger die sizes.
Examples disclosed herein utilize an in-line die shape (bow/warpage) monitoring/measurement and feedback system that can mitigate and/or reduce the effects of warpage and/or runout of a die. Examples disclosed herein implement a unique bond head nozzle design that enables control of a shape of a die. Examples disclosed herein can adjust the shape of the die in an in-line processing during bonding, thereby enabling relatively void free bonding as well as relatively few scaling errors. Examples disclosed herein can account for a wide range of variation in die and, thus, can enable increased bonding reliability and reduce defects thereof. Examples disclosed can enable bond process correction to mitigate die shape variation and stresses related to bonding voids.
Examples disclosed herein utilize a sensor (e.g., an in-line sensor) to determine a shape profile of a die including out-of-plane warpage (e.g., based on an in-line die shape measurement made by the sensor, based on an output of the sensor as the die is moved to a target wafer and/or picked up from a carrier wafer, etc.). In turn, an adjustment of the shape profile and/or a shape/flexure of the die is determined. According to examples disclosed herein, an actuator and/or a vacuum device/generator carried by a placer (e.g., a bond head, a die bonder, a die placer, etc.) is implemented to displace and/or move at least a portion of the die. In some examples, the placer adjusts the shape of the die during bonding of the die to a target (e.g., a target wafer).
In some examples, the actuator includes at least one push pin. Additionally or alternatively, the placer includes and/or defines a vacuum device/generator having pneumatic channels that are utilized to generate a vacuum to pull on, adjust a shape of and/or carry the die. In some examples, an array or grid of push pins are utilized to adjust the shape of the die for bonding. In some such examples, the push pins include a channel or aperture for utilizing a vacuum to change a shape of the die. In some examples, at least one vacuum opening or aperture is utilized to adjust the shape of the die. For example, an array of vacuum openings can be utilized to adjust the shape of the die. In some examples, the actuators are organized as groups of push pins such that the pins can be actuated in groups to change the shape of the die and push the die to the target to initiate bonding. In some examples, the shape of the die is adjusted/corrected based on measurement, prior to bonding (e.g., the shape of the die is retrieved via a database prior to bonding). In some examples, the shape of the die is continuously adjusted/varied as the die is being bonded to the target such that measurements of the die are obtained during bonding.
In some examples, a shape model/profile of the die is utilized (e.g., retrieved from a database) to determine an adjustment of the die. Additionally or alternatively, a machine learning model is utilized to determine and/or control an adjustment of the die. In some such examples, the machine learning model may be trained based on shape profiles, die thickness, manufacturing identifiers (e.g., lot codes), layered construction, etc. in conjunction with results (e.g., reliability results, bonding results, etc.). In some examples, the sensor is carried by the aforementioned placer. The sensor can measure the three-dimensional shape profile of the die prior to the die being picked up or while the die is carried/supported by the placer, for example (in other words, the free-standing three-dimensional shape profile of the die can be measured by the sensor and/or the three-dimensional shape profile of the die while it is being supported by a carrier or a nozzle can also be measured).
As used herein, the term “actuator” refers to any device, system, mechanism and/or assembly that is utilized to move at least a portion of an object. Accordingly, the term “actuator” can refer to a device, system, mechanism and/or assembly that contacts at least a portion of an object or utilizes a force with respect to the object, etc. As used herein, the terms “vacuum device,” “vacuum generator,” and “vacuum array” refer to a device, component, assembly and/or system that utilizes a fluid to generate a vacuum for movement and/or carrying of an object.
In this example, the die 201 are removed from a carrier wafer/film frame carrier (FFC) 211 and bonded to a target 212, which is a target wafer in this example (and herein referred to as such). According to examples disclosed herein, the sensor 204 is to measure a shape profile of the die 201 as the die 201 are carried by the placer 206 toward the target wafer 212. In turn, the bond head 208 adjusts an overall shape of the die 201. As a result, the die 201 can be bonded to the target wafer 212 while reducing a probability/occurrence of defective bonds, voids or other manufacturing defects.
According to examples disclosed herein, to adjust the shape profile of the individual die 201, the placer 206 includes, carries and/or supports an actuator, a group of actuators and/or a vacuum device that shifts and/or displaces at least a portion of ones of the die 201, thereby adjusting a shape profile (e.g., a flexure, a flexure profile, a warp characteristic, a warpage, etc.) thereof. As will be shown in examples disclosed below in connection with
While examples disclosed herein are shown in the context of a D2 W process, examples disclosed herein can be applied to any other appropriate application of die bonding/assembly. Accordingly, examples disclosed herein can be applied to coupling/bonding die to targets other than a target wafer, for example.
In some examples, at block 304, it is determined whether a shape model (e.g., a shape/flexure profile of the die, a flexure profile, a 3D profile, etc.) exists and/or is accessible (e.g., in a database, pre-measured readings, lot measurements, etc.). If the shape model exists and/or is accessible (control of the process proceeds to block 308). Otherwise, the process proceeds to block 306.
At block 306, an in-line die shape measurement is obtained and/or measured by a sensor (e.g., the sensor 204 of
At block 308, in some examples, data and/or information corresponding to a shape (e.g., a shape profile) of the die is obtained from the model-based shape information. For example, a serial number, symbol and/or identifier of the die is utilized to obtain the data and/or the information corresponding to the shape.
At block 310, the shape of the die is adjusted and/or modified. According to some examples, the shape of the die is adjusted based on displacing and/or moving at least a portion of the die with an actuator and/or a vacuum device including an array of vacuum apertures to vary a flexure, warpage and/or flatness thereof, for example. The vacuum apertures can have different shapes. Some examples of aperture shapes are circular, linear, or elliptical apertures). According to some examples disclosed herein, the shape of the die is adjusted until and/or while the die is being bonded to the target wafer.
In some examples, based on existing shape data model (or recently collected shape data), the aforementioned bond head modulates a shape of the die to reduce voids (e.g., between the die and the target) with a relatively low degree of overlay error bonding. For example, the bond head can assign weights/weighting to individual push-pin actuators or individual vacuum ports/openings based on pixel-wise topography data collected from an integrated shape sensor to reduce effects of local peaks/troughs and ensure relatively uniform bond wave propagation.
At block 312, the die is bonded to the aforementioned target wafer. In some examples, the shape of ones of the die is adjusted by the actuator and/or the vacuum ports/openings as the die is bonded to the target wafer (e.g., during a bonding process). In some such examples, an adjustment and/or adjustment profile of the die varies as the die is bonded to the target wafer (e.g., varies with respect to time during a bonding process). In other words, the displacement of portions of the individual die can be varied at different times or stages of the bonding process.
As can be seen in the side view 403, the example pin 406 can be moved and/or displaced upward and downward (in the side view 403 of
Turning to
An aspect or feature described in any of the examples disclosed herein can be combined or utilized with another example, as appropriate. In other words, any aspect described herein can be implemented in another example.
The example die shape control system 500 includes example shape analyzer circuitry 502, example adjustment determiner circuitry 504, example displacement controller circuitry 506, example shape model analyzer circuitry 508 and an example data storage 510. According to examples disclosed herein, the die shape control system 500 includes and/or is coupled to the example sensor(s) 204.
According to examples disclosed herein, the shape analyzer 502 is implemented to determine and/or characterize a shape, a shape profile, a flexure distribution, a warpage, a flexure, etc. of a die based on sensor output from a sensor (e.g., the sensor 204 of
In this example, the adjustment determiner circuitry 504 is implemented to determine and/or calculate an adjustment of the die (e.g., adjustment of a shape of the die). In some examples, the adjustment determiner circuitry 504 determines an adjustment profile to adjust a shape of the die as the die is placed onto and/or coupled to a wafer (e.g., the target wafer 212). In some examples, the shape of the die is adjusted as the die is bonded to the aforementioned wafer. In some examples, the adjustment determiner circuitry 504 is instantiated by programmable circuitry executing adjustment determiner instructions and/or configured to perform operations such as those represented by the flowchart of
According to examples disclosed herein, the displacement controller circuitry 506 is implemented to control an actuator or other shape adjustment device (e.g., a movable pin array, a vacuum array, a vacuum device, a vacuum generator, etc.) to adjust a shape/profile of the die based on the determined and/or calculated adjustment. In some examples, the displacement controller circuitry 506 is instantiated by programmable circuitry executing displacement controller instructions and/or configured to perform operations such as those represented by the flowchart of
In some examples, a shape model analyzer circuitry 508 is implemented to develop, generate and/or train a model for determining a model corresponding to die shape adjustments. In a particular example, the model is a machine-learning (ML) model that is trained with die measurements, shape adjustments die thickness, etc. in conjunction with corresponding results (e.g., bonding results, Confocal Scanning Acoustic Microscopy (CSAM) results, yield results, reliability results, assembled profile results, life expectation results, etc.). In some such examples, the trained model is utilized to determine an adjustment of a die given at least one measurement thereof (e.g., a measured 3D profile, a spatial profile, a flexure profile, etc.). Additionally or alternatively, the shape model analyzer circuitry 508 determines an extent to which the die shape is to be adjusted (e.g., based on further processing and/or adjustments of the die). According to some examples disclosed herein, the shape model analyzer circuitry 508 trains the model based on die flexure with respect to bonding adhesion or any other appropriate measurable parameter. In some examples, the shape model analyzer circuitry 508 is instantiated by programmable circuitry executing shape model analyzer instructions and/or configured to perform operations such as those represented by the flowchart of
In some examples, the data storage 510 is implemented to store shape profile data, individual die data, flexure corrections, shape adjustment information, etc. In some examples, the data storage 510 is implemented to store trained machine learning models and/or data utilized to train the machine learning models.
While an example manner of implementing the die shape control system 500 of
A flowchart representative of example machine readable instructions, which may be executed by programmable circuitry to implement and/or instantiate the die shape control system 500 of
The program may be embodied in instructions (e.g., software and/or firmware) stored on one or more non-transitory computer readable and/or machine readable storage medium such as cache memory, a magnetic-storage device or disk (e.g., a floppy disk, a Hard Disk Drive (HDD), etc.), an optical-storage device or disk (e.g., a Blu-ray disk, a Compact Disk (CD), a Digital Versatile Disk (DVD), etc.), a Redundant Array of Independent Disks (RAID), a register, ROM, a solid-state drive (SSD), SSD memory, non-volatile memory (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, etc.), volatile memory (e.g., Random Access Memory (RAM) of any type, etc.), and/or any other storage device or storage disk. The instructions of the non-transitory computer readable and/or machine readable medium may program and/or be executed by programmable circuitry located in one or more hardware devices, but the entire program and/or parts thereof could alternatively be executed and/or instantiated by one or more hardware devices other than the programmable circuitry and/or embodied in dedicated hardware. The machine readable instructions may be distributed across multiple hardware devices and/or executed by two or more hardware devices (e.g., a server and a client hardware device). For example, the client hardware device may be implemented by an endpoint client hardware device (e.g., a hardware device associated with a human and/or machine user) or an intermediate client hardware device gateway (e.g., a radio access network (RAN)) that may facilitate communication between a server and an endpoint client hardware device. Similarly, the non-transitory computer readable storage medium may include one or more mediums. Further, although the example program is described with reference to the flowchart illustrated in
The machine readable instructions described herein may be stored in one or more of a compressed format, an encrypted format, a fragmented format, a compiled format, an executable format, a packaged format, etc. Machine readable instructions as described herein may be stored as data (e.g., computer-readable data, machine-readable data, one or more bits (e.g., one or more computer-readable bits, one or more machine-readable bits, etc.), a bitstream (e.g., a computer-readable bitstream, a machine-readable bitstream, etc.), etc.) or a data structure (e.g., as portion(s) of instructions, code, representations of code, etc.) that may be utilized to create, manufacture, and/or produce machine executable instructions. For example, the machine readable instructions may be fragmented and stored on one or more storage devices, disks and/or computing devices (e.g., servers) located at the same or different locations of a network or collection of networks (e.g., in the cloud, in edge devices, etc.). The machine readable instructions may require one or more of installation, modification, adaptation, updating, combining, supplementing, configuring, decryption, decompression, unpacking, distribution, reassignment, compilation, etc., in order to make them directly readable, interpretable, and/or executable by a computing device and/or other machine. For example, the machine readable instructions may be stored in multiple parts, which are individually compressed, encrypted, and/or stored on separate computing devices, wherein the parts when decrypted, decompressed, and/or combined form a set of computer-executable and/or machine executable instructions that implement one or more functions and/or operations that may together form a program such as that described herein.
In another example, the machine readable instructions may be stored in a state in which they may be read by programmable circuitry, but require addition of a library (e.g., a dynamic link library (DLL)), a software development kit (SDK), an application programming interface (API), etc., in order to execute the machine-readable instructions on a particular computing device or other device. In another example, the machine readable instructions may need to be configured (e.g., settings stored, data input, network addresses recorded, etc.) before the machine readable instructions and/or the corresponding program(s) can be executed in whole or in part. Thus, machine readable, computer readable and/or machine readable media, as used herein, may include instructions and/or program(s) regardless of the particular format or state of the machine readable instructions and/or program(s).
The machine readable instructions described herein can be represented by any past, present, or future instruction language, scripting language, programming language, etc. For example, the machine readable instructions may be represented using any of the following languages: C, C++, Java, C#, Perl, Python, JavaScript, HyperText Markup Language (HTML), Structured Query Language (SQL), Swift, etc.
As mentioned above, the example operations of
At block 604, in some examples, the example shape analyzer 502 determines whether a shape model and/or shape information of the die exists and/or is accessible. If the shape model and/or the shape information is not available, control of the process proceeds to block 606. Otherwise, the process proceeds to block 608.
At block 606, additionally or alternatively, the example shape analyzer 502 causes and/or directs at least one sensor (e.g., the sensor 204) to measure the die (e.g., measure portions/areas of the die). In this example, the shape analyzer 502 causes and/or directs the sensor to measure multiple points of the die to generate and/or determine a surface/flexure/warpage profile of the die.
At block 608, the example shape model analyzer circuitry 508 obtains and/or accesses a shape model and/or a trained machine learning model from the data storage 510.
At block 610, according to examples disclosed herein, the shape analyzer 502 and/or the shape model analyzer circuitry 508 determines a shape, shape profile, warpage and/or flexure of the die. The shape analyzer 502 and/or the shape model analyzer circuitry 508 may make the determination based on sensor measurements and/or previously recorded data, for example. In some examples, the shape analyzer 502 and/or the shape model analyzer circuitry 508 utilize a shape profile of multiple points of at least one surface of the die.
At block 612, the example adjustment determiner circuitry 504 determines an adjustment of the shape and/or the flexure. In this example, the adjustment determiner circuitry 504 determines the adjustment to reduce an occurrence of voids between the die and the target. The adjustment can vary over time (e.g., a displacement that varies over time).
At block 614, the example displacement controller circuitry 506 causes the actuator and/or vacuum device/generator to adjust the shape/flexure profile of the die. According to example disclosed herein, a grid/array of actuators (e.g., a grid of pins) and/or vacuum apertures/openings are controlled by the displacement controller circuitry 506 to affect a shape and/or shape profile of the die across multiple directions/axes.
In some examples, at block 615, the shape analyzer 502 and/or the adjustment determiner circuitry 504 determines whether additional adjustments are to be performed. This determination may be based on real-time measurements of the shape/flexure profile of the die. If additional adjustments are to be performed, control of the process returns to block 612. Otherwise, the process proceeds to block 616.
At block 616, the example displacement controller circuitry 506 controls the placer to couple/bond the die to the target. In some examples, the displacement controller circuitry 506 controls the actuator and/or an array of vacuum apertures as well as movement of the placer.
At block 618, in some examples, it is determined by the shape analyzer 502 and/or the adjustment determiner circuitry 504 whether to repeat the process. If the process is to be repeated (block 618), control of the process returns to block 602. Otherwise, the process ends. The determination may be based on whether additional die are to be bonded/coupled to the target.
The programmable circuitry platform 700 of the illustrated example includes programmable circuitry 712. The programmable circuitry 712 of the illustrated example is hardware. For example, the programmable circuitry 712 can be implemented by one or more integrated circuits, logic circuits, FPGAs, microprocessors, CPUs, GPUs, DSPs, and/or microcontrollers from any desired family or manufacturer. The programmable circuitry 712 may be implemented by one or more semiconductor based (e.g., silicon based) devices. In this example, the programmable circuitry 712 implements the example shape analyzer 502, the example adjustment determiner circuitry 504, the example displacement controller circuitry 506, and the example shape model analyzer circuitry 508.
The programmable circuitry 712 of the illustrated example includes a local memory 713 (e.g., a cache, registers, etc.). The programmable circuitry 712 of the illustrated example is in communication with main memory 714, 716, which includes a volatile memory 714 and a non-volatile memory 716, by a bus 718. The volatile memory 714 may be implemented by Synchronous Dynamic Random Access Memory (SDRAM), Dynamic Random Access Memory (DRAM), RAMBUS® Dynamic Random Access Memory (RDRAM®), and/or any other type of RAM device. The non-volatile memory 716 may be implemented by flash memory and/or any other desired type of memory device. Access to the main memory 714, 716 of the illustrated example is controlled by a memory controller 717. In some examples, the memory controller 717 may be implemented by one or more integrated circuits, logic circuits, microcontrollers from any desired family or manufacturer, or any other type of circuitry to manage the flow of data going to and from the main memory 714, 716.
The programmable circuitry platform 700 of the illustrated example also includes interface circuitry 720. The interface circuitry 720 may be implemented by hardware in accordance with any type of interface standard, such as an Ethernet interface, a universal serial bus (USB) interface, a Bluetooth® interface, a near field communication (NFC) interface, a Peripheral Component Interconnect (PCI) interface, and/or a Peripheral Component Interconnect Express (PCIe) interface.
In the illustrated example, one or more input devices 722 are connected to the interface circuitry 720. The input device(s) 722 permit(s) a user (e.g., a human user, a machine user, etc.) to enter data and/or commands into the programmable circuitry 712. The input device(s) 722 can be implemented by, for example, an audio sensor, a microphone, a camera (still or video), a keyboard, a button, a mouse, a touchscreen, a trackpad, a trackball, an isopoint device, and/or a voice recognition system.
One or more output devices 724 are also connected to the interface circuitry 720 of the illustrated example. The output device(s) 724 can be implemented, for example, by display devices (e.g., a light emitting diode (LED), an organic light emitting diode (OLED), a liquid crystal display (LCD), a cathode ray tube (CRT) display, an in-place switching (IPS) display, a touchscreen, etc.), a tactile output device, a printer, and/or speaker. The interface circuitry 720 of the illustrated example, thus, typically includes a graphics driver card, a graphics driver chip, and/or graphics processor circuitry such as a GPU.
The interface circuitry 720 of the illustrated example also includes a communication device such as a transmitter, a receiver, a transceiver, a modem, a residential gateway, a wireless access point, and/or a network interface to facilitate exchange of data with external machines (e.g., computing devices of any kind) by a network 726. The communication can be by, for example, an Ethernet connection, a digital subscriber line (DSL) connection, a telephone line connection, a coaxial cable system, a satellite system, a beyond-line-of-sight wireless system, a line-of-sight wireless system, a cellular telephone system, an optical connection, etc.
The programmable circuitry platform 700 of the illustrated example also includes one or more mass storage discs or devices 728 to store firmware, software, and/or data. Examples of such mass storage discs or devices 728 include magnetic storage devices (e.g., floppy disk, drives, HDDs, etc.), optical storage devices (e.g., Blu-ray disks, CDs, DVDs, etc.), RAID systems, and/or solid-state storage discs or devices such as flash memory devices and/or SSDs.
The machine readable instructions 732, which may be implemented by the machine readable instructions of
The cores 802 may communicate by a first example bus 804. In some examples, the first bus 804 may be implemented by a communication bus to effectuate communication associated with one(s) of the cores 802. For example, the first bus 804 may be implemented by at least one of an Inter-Integrated Circuit (I2C) bus, a Serial Peripheral Interface (SPI) bus, a PCI bus, or a PCIe bus. Additionally or alternatively, the first bus 804 may be implemented by any other type of computing or electrical bus. The cores 802 may obtain data, instructions, and/or signals from one or more external devices by example interface circuitry 806. The cores 802 may output data, instructions, and/or signals to the one or more external devices by the interface circuitry 806. Although the cores 802 of this example include example local memory 820 (e.g., Level 1 (L1) cache that may be split into an L1 data cache and an L1 instruction cache), the microprocessor 800 also includes example shared memory 810 that may be shared by the cores (e.g., Level 2 (L2 cache)) for high-speed access to data and/or instructions. Data and/or instructions may be transferred (e.g., shared) by writing to and/or reading from the shared memory 810. The local memory 820 of each of the cores 802 and the shared memory 810 may be part of a hierarchy of storage devices including multiple levels of cache memory and the main memory (e.g., the main memory 714, 716 of
Each core 802 may be referred to as a CPU, DSP, GPU, etc., or any other type of hardware circuitry. Each core 802 includes control unit circuitry 814, arithmetic and logic (AL) circuitry (sometimes referred to as an ALU) 816, a plurality of registers 818, the local memory 820, and a second example bus 822. Other structures may be present. For example, each core 802 may include vector unit circuitry, single instruction multiple data (SIMD) unit circuitry, load/store unit (LSU) circuitry, branch/jump unit circuitry, floating-point unit (FPU) circuitry, etc. The control unit circuitry 814 includes semiconductor-based circuits structured to control (e.g., coordinate) data movement within the corresponding core 802. The AL circuitry 816 includes semiconductor-based circuits structured to perform one or more mathematic and/or logic operations on the data within the corresponding core 802. The AL circuitry 816 of some examples performs integer based operations. In other examples, the AL circuitry 816 also performs floating-point operations. In yet other examples, the AL circuitry 816 may include first AL circuitry that performs integer-based operations and second AL circuitry that performs floating-point operations. In some examples, the AL circuitry 816 may be referred to as an Arithmetic Logic Unit (ALU).
The registers 818 are semiconductor-based structures to store data and/or instructions such as results of one or more of the operations performed by the AL circuitry 816 of the corresponding core 802. For example, the registers 818 may include vector register(s), SIMD register(s), general-purpose register(s), flag register(s), segment register(s), machine-specific register(s), instruction pointer register(s), control register(s), debug register(s), memory management register(s), machine check register(s), etc. The registers 818 may be arranged in a bank as shown in
Each core 802 and/or, more generally, the microprocessor 800 may include additional and/or alternate structures to those shown and described above. For example, one or more clock circuits, one or more power supplies, one or more power gates, one or more cache home agents (CHAs), one or more converged/common mesh stops (CMSs), one or more shifters (e.g., barrel shifter(s)) and/or other circuitry may be present. The microprocessor 800 is a semiconductor device fabricated to include many transistors interconnected to implement the structures described above in one or more integrated circuits (ICs) contained in one or more packages.
The microprocessor 800 may include and/or cooperate with one or more accelerators (e.g., acceleration circuitry, hardware accelerators, etc.). In some examples, accelerators are implemented by logic circuitry to perform certain tasks more quickly and/or efficiently than can be done by a general-purpose processor. Examples of accelerators include ASICs and FPGAs such as those discussed herein. A GPU, DSP and/or other programmable device can also be an accelerator. Accelerators may be on-board the microprocessor 800, in the same chip package as the microprocessor 800 and/or in one or more separate packages from the microprocessor 800.
More specifically, in contrast to the microprocessor 800 of
In the example of
In some examples, the binary file is compiled, generated, transformed, and/or otherwise output from a uniform software platform utilized to program FPGAs. For example, the uniform software platform may translate first instructions (e.g., code or a program) that correspond to one or more operations/functions in a high-level language (e.g., C, C++, Python, etc.) into second instructions that correspond to the one or more operations/functions in an HDL. In some such examples, the binary file is compiled, generated, and/or otherwise output from the uniform software platform based on the second instructions. In some examples, the FPGA circuitry 900 of
The FPGA circuitry 900 of
The FPGA circuitry 900 also includes an array of example logic gate circuitry 908, a plurality of example configurable interconnections 910, and example storage circuitry 912. The logic gate circuitry 908 and the configurable interconnections 910 are configurable to instantiate one or more operations/functions that may correspond to at least some of the machine readable instructions of
The configurable interconnections 910 of the illustrated example are conductive pathways, traces, vias, or the like that may include electrically controllable switches (e.g., transistors) whose state can be changed by programming (e.g., using an HDL instruction language) to activate or deactivate one or more connections between one or more of the logic gate circuitry 908 to program desired logic circuits.
The storage circuitry 912 of the illustrated example is structured to store result(s) of the one or more of the operations performed by corresponding logic gates. The storage circuitry 912 may be implemented by registers or the like. In the illustrated example, the storage circuitry 912 is distributed amongst the logic gate circuitry 908 to facilitate access and increase execution speed.
The example FPGA circuitry 900 of
Although
It should be understood that some or all of the circuitry of
In some examples, some or all of the circuitry of
In some examples, the programmable circuitry 712 of
“Including” and “comprising” (and all forms and tenses thereof) are used herein to be open ended terms. Thus, whenever a claim employs any form of “include” or “comprise” (e.g., comprises, includes, comprising, including, having, etc.) as a preamble or within a claim recitation of any kind, it is to be understood that additional elements, terms, etc., may be present without falling outside the scope of the corresponding claim or recitation. As used herein, when the phrase “at least” is used as the transition term in, for example, a preamble of a claim, it is open-ended in the same manner as the term “comprising” and “including” are open ended. The term “and/or” when used, for example, in a form such as A, B, and/or C refers to any combination or subset of A, B, C such as (1) A alone, (2) B alone, (3) C alone, (4) A with B, (5) A with C, (6) B with C, or (7) A with B and with C. As used herein in the context of describing structures, components, items, objects and/or things, the phrase “at least one of A and B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing structures, components, items, objects and/or things, the phrase “at least one of A or B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. As used herein in the context of describing the performance or execution of processes, instructions, actions, activities, etc., the phrase “at least one of A and B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing the performance or execution of processes, instructions, actions, activities, etc., the phrase “at least one of A or B” is intended to refer to implementations including any of (1) at least one A, (2) at least one B, or (3) at least one A and at least one B.
As used herein, singular references (e.g., “a”, “an”, “first”, “second”, etc.) do not exclude a plurality. The term “a” or “an” object, as used herein, refers to one or more of that object. The terms “a” (or “an”), “one or more”, and “at least one” are used interchangeably herein. Furthermore, although individually listed, a plurality of means, elements, or actions may be implemented by, e.g., the same entity or object. Additionally, although individual features may be included in different examples or claims, these may possibly be combined, and the inclusion in different examples or claims does not imply that a combination of features is not feasible and/or advantageous.
As used herein, unless otherwise stated, the term “above” describes the relationship of two parts relative to Earth. A first part is above a second part, if the second part has at least one part between Earth and the first part. Likewise, as used herein, a first part is “below” a second part when the first part is closer to the Earth than the second part. As noted above, a first part can be above or below a second part with one or more of: other parts therebetween, without other parts therebetween, with the first and second parts touching, or without the first and second parts being in direct contact with one another.
Notwithstanding the foregoing, in the case of referencing a semiconductor device (e.g., a transistor), a semiconductor die containing a semiconductor device, and/or an integrated circuit (IC) package containing a semiconductor die during fabrication or manufacturing, “above” is not with reference to Earth, but instead is with reference to an underlying substrate on which relevant components are fabricated, assembled, mounted, supported, or otherwise provided. Thus, as used herein and unless otherwise stated or implied from the context, a first component within a semiconductor die (e.g., a transistor or other semiconductor device) is “above” a second component within the semiconductor die when the first component is farther away from a substrate (e.g., a semiconductor wafer) during fabrication/manufacturing than the second component on which the two components are fabricated or otherwise provided. Similarly, unless otherwise stated or implied from the context, a first component within an IC package (e.g., a semiconductor die) is “above” a second component within the IC package during fabrication when the first component is farther away from a printed circuit board (PCB) to which the IC package is to be mounted or attached. It is to be understood that semiconductor devices are often used in orientation different than their orientation during fabrication. Thus, when referring to a semiconductor device (e.g., a transistor), a semiconductor die containing a semiconductor device, and/or an integrated circuit (IC) package containing a semiconductor die during use, the definition of “above” in the preceding paragraph (i.e., the term “above” describes the relationship of two parts relative to Earth) will likely govern based on the usage context.
As used in this patent, stating that any part (e.g., a layer, film, area, region, or plate) is in any way on (e.g., positioned on, located on, disposed on, or formed on, etc.) another part, indicates that the referenced part is either in contact with the other part, or that the referenced part is above the other part with one or more intermediate part(s) located therebetween.
As used herein, connection references (e.g., attached, coupled, connected, and joined) may include intermediate members between the elements referenced by the connection reference and/or relative movement between those elements unless otherwise indicated. As such, connection references do not necessarily infer that two elements are directly connected and/or in fixed relation to each other. As used herein, stating that any part is in “contact” with another part is defined to mean that there is no intermediate part between the two parts.
Unless specifically stated otherwise, descriptors such as “first,” “second,” “third,” etc., are used herein without imputing or otherwise indicating any meaning of priority, physical order, arrangement in a list, and/or ordering in any way, but are merely used as labels and/or arbitrary names to distinguish elements for ease of understanding the disclosed examples. In some examples, the descriptor “first” may be used to refer to an element in the detailed description, while the same element may be referred to in a claim with a different descriptor such as “second” or “third.” In such instances, it should be understood that such descriptors are used merely for identifying those elements distinctly within the context of the discussion (e.g., within a claim) in which the elements might, for example, otherwise share a same name.
As used herein, “approximately” and “about” modify their subjects/values to recognize the potential presence of variations that occur in real world applications. For example, “approximately” and “about” may modify dimensions that may not be exact due to manufacturing tolerances and/or other real world imperfections as will be understood by persons of ordinary skill in the art. For example, “approximately” and “about” may indicate such dimensions may be within a tolerance range of +/−10% unless otherwise specified herein.
As used herein “substantially real time” refers to occurrence in a near instantaneous manner recognizing there may be real world delays for computing time, transmission, etc. Thus, unless otherwise specified, “substantially real time” refers to real time+1 second.
As used herein, the phrase “in communication,” including variations thereof, encompasses direct communication and/or indirect communication through one or more intermediary components, and does not require direct physical (e.g., wired) communication and/or constant communication, but rather additionally includes selective communication at periodic intervals, scheduled intervals, aperiodic intervals, and/or one-time events.
As used herein, “programmable circuitry” is defined to include (i) one or more special purpose electrical circuits (e.g., an application specific circuit (ASIC)) structured to perform specific operation(s) and including one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors), and/or (ii) one or more general purpose semiconductor-based electrical circuits programmable with instructions to perform specific functions(s) and/or operation(s) and including one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors). Examples of programmable circuitry include programmable microprocessors such as Central Processor Units (CPUs) that may execute first instructions to perform one or more operations and/or functions, Field Programmable Gate Arrays (FPGAs) that may be programmed with second instructions to cause configuration and/or structuring of the FPGAs to instantiate one or more operations and/or functions corresponding to the first instructions, Graphics Processor Units (GPUs) that may execute first instructions to perform one or more operations and/or functions, Digital Signal Processors (DSPs) that may execute first instructions to perform one or more operations and/or functions, XPUs, Network Processing Units (NPUs) one or more microcontrollers that may execute first instructions to perform one or more operations and/or functions and/or integrated circuits such as Application Specific Integrated Circuits (ASICs). For example, an XPU may be implemented by a heterogeneous computing system including multiple types of programmable circuitry (e.g., one or more FPGAs, one or more CPUs, one or more GPUs, one or more NPUs, one or more DSPs, etc., and/or any combination(s) thereof), and orchestration technology (e.g., application programming interface(s) (API(s)) that may assign computing task(s) to whichever one(s) of the multiple types of programmable circuitry is/are suited and available to perform the computing task(s).
As used herein integrated circuit/circuitry is defined as one or more semiconductor packages containing one or more circuit elements such as transistors, capacitors, inductors, resistors, current paths, diodes, etc. For example, an integrated circuit may be implemented as one or more of an ASIC, an FPGA, a chip, a microchip, programmable circuitry, a semiconductor substrate coupling multiple circuit elements, a system on chip (SoC), etc.
Example methods, apparatus, systems, and articles of manufacture to enable die bonds with increased bonding and, thus, reliability are disclosed herein. Further examples and combinations thereof include the following:
Example 1 includes an apparatus to adjust a die for bonding to a target, the apparatus comprising interface circuitry, machine-readable instructions, and at least one processor circuit to be programmed by the machine-readable instructions to determine a shape profile of the die, determine an adjustment of the shape profile with respect to the bonding of the die to the target, and cause at least one of (i) an actuator or (ii) a vacuum device of a placer that carries the die to adjust the shape profile based on the determined adjustment.
Example 2 includes the apparatus as defined in example 1, further including a sensor to measure the shape profile of the die, the sensor to provide output therefrom to the interface circuitry.
Example 3 includes the apparatus as defined in example 2, wherein the sensor is to measure the shape profile of the die prior to the placer picking up the die.
Example 4 includes the apparatus as defined in any of examples 1 to 3, wherein the at least one of (i) the actuator or (ii) the vacuum device includes at least one pin to displace a portion of the die to adjust the shape profile.
Example 5 includes the apparatus as defined in example 4, wherein the at least one pin is one of a plurality of pins arranged in a grid to adjust the shape profile.
Example 6 includes the apparatus as defined in example 5, wherein the pins include apertures that define vacuum zones.
Example 7 includes the apparatus as defined in any of examples 1 to 5, wherein the placer includes the vacuum device having a grid of at least two independently controlled vacuum apertures.
Example 8 includes the apparatus as defined in any of examples 1 to 7, wherein one or more of the at least one processor circuit is to utilize a trained machine learning model to determine the adjustment.
Example 9 includes the apparatus as defined in example 8, wherein the machine learning model is trained based on die flexure with respect to bonding adhesion.
Example 10 includes a system for bonding a die to a target wafer, the system comprising a placer to place the die onto the target wafer, a sensor to measure a flexure of the die at least one of before or during bonding the die to the target wafer, and at least one of (i) an actuator or (ii) a vacuum generator to displace a first portion of the die relative to a second portion of the die based on the measured flexure.
Example 11 includes the system as defined in example 10, further including a controller to determine an adjustment of a shape of the die based on the flexure, and wherein the at least one of (i)) the actuator or (ii) the vacuum generator is to displace the first portion of the die relative to the second portion of the die based on the adjustment of the shape of the die.
Example 12 includes the system as defined in example 11, wherein the controller is to retrieve a shape model of the die from a database, and wherein the at least one of (i) the actuator or (ii) the vacuum generator is to displace the first portion of the die relative to the second portion of the die based on the shape model.
Example 13 includes the system as defined in any of examples 10 to 12, wherein the at least one of (i) the actuator or (ii) the vacuum generator includes an array of vacuum apertures corresponding to respective movable pins.
Example 14 includes the system as defined in any of examples 10 to 13, wherein the sensor is carried by the bond head.
Example 15 includes the system as defined in any of examples 10 to 14, wherein the at least one of (i) the actuator or (ii) the vacuum generator is to displace the first portion of the die while the die is placed onto the target wafer.
Example 16 includes the system as defined in any of examples 10 to 15, wherein the sensor is to measure the flexure of the die as the die is moved to the wafer via the bond head.
Example 17 includes a method of bonding a die to a target wafer, the method comprising determining a shape of the die, displacing at a first portion of the die relative to a second portion of the die based on the shape, and coupling the die to the target wafer with the at least the portion of the die displaced.
Example 18 includes the method of example 17, further including determining an adjustment of the die based on the shape, and wherein the displacing of the first portion of the die relative to the second portion of the die is based on the adjustment.
Example 19 includes the method of any of examples 17 or 18, wherein displacing the at least the portion of the die occurs while the die is being coupled to the target wafer.
Example 20 includes the method of any of examples 17 to 19, wherein determining the shape of the die is based on output from a sensor corresponding to an in-line die shape measurement.
From the foregoing, it will be appreciated that example systems, apparatus, articles of manufacture, and methods have been disclosed that enable improved die bonding, especially in die-to-wafer applications. Examples disclosed herein can improve yields of die-based wafers, for example. Examples disclosed herein can effectively adjust for and/or mitigate variability in shape, warpage and/or flexure of die, etc.
The following claims are hereby incorporated into this Detailed Description by this reference. Although certain example systems, apparatus, articles of manufacture, and methods have been disclosed herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers all systems, apparatus, articles of manufacture, and methods fairly falling within the scope of the claims of this patent.