Number | Date | Country | Kind |
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5-027462 | Jan 1993 | JPX | |
5-029896 | Jan 1993 | JPX | |
5-090743 | Mar 1993 | JPX |
Number | Name | Date | Kind |
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4869781 | Euen et al. | Sep 1989 |
Entry |
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Deep-Submicrometer CMOS Technology With Reoxidated or Annealed Nitrided-Oxide Gate Dielectrics Prepared By Rapid Thermal Processing, T. Hori, IEEE Transactions of Electron Devices, vol. 39, No. 1, Jan. 1992, pp. 118-126. |
Improvement In Gate-Dielectric Characteristics Of Nitrated Oxides Prepared By Rapid Thermal Processing, T. Hori, Applied Physics vol. 60, No. 11 (1991), pp. 1127-1130. |