Patent Grant
10832934
The present disclosure relates generally to micro-transfer printing micro-devices from source wafers and, in particular, to tethers physically connecting micro-devices to source wafers.
Substrates with components such as electronically active devices or other structures distributed over the extent of the substrate can be used in a variety of electronic systems, for example, flat-panel imaging devices such as flat-panel liquid crystal or organic light emitting diode (OLED) display devices and in flat-panel solar cells. A variety of methods may be used to distribute components over a substrate, including forming the components on the substrate, for example forming thin-film transistors made using photolithographic methods and materials on the substrate, and forming the components on separate wafers using integrated circuit techniques and transferring the components to a substrate, for example using pick-and-place tools or micro-transfer printing.
One exemplary micro-transfer printing method for transferring active components from one substrate to another is described in AMOLED Displays using Transfer-Printed Integrated Circuits published in the Proceedings of the 2009 Society for Information Display International Symposium Jun. 2-5, 2009, in San Antonio Tex., US, vol. 40, Book 2, ISSN 0009-0966X, paper 63.2 p. 947 and in Inorganic light-emitting diode displays using micro-transfer printing published in the Journal of the Society for Information Display 25/10, 2017, 1071-0922/17/2510-06, DOI #10.1002/jsid.610, p. 589. In this approach, small integrated circuits are formed over a patterned sacrificial layer on the process side of a crystalline wafer. The small integrated circuits, or chiplets, are released from the wafer by etching the patterned sacrificial layer beneath the circuits. A PDMS stamp is pressed against the wafer and the process side of the chiplets is adhered to the stamp. The chiplets are removed from the wafer by the stamp and are pressed against a destination substrate or backplane coated with an adhesive and thereby adhered to the destination substrate. The adhesive is subsequently cured. In another example, U.S. Pat. No. 8,722,458 entitled Optical Systems Fabricated by Printing-Based Assembly teaches transferring light-emitting, light-sensing, or light-collecting semiconductor elements from a wafer substrate to a destination substrate or backplane.
After the patterned sacrificial layer is etched and before the chiplets are transferred, the chiplets are attached by tethers to anchors in the wafer so that their physical, spatial relationship to the wafer is maintained and the chiplets can be printed accurately and precisely. It is important that the tether maintain the position of the chiplet with respect to the wafer and allow the stamp to fracture or separate the chiplet from the anchor during the micro-transfer printing process. If the tether is too fragile, the chiplets can detach entirely from the wafer prior to printing and if the tether is too robust, the stamp cannot detach the chiplets from the wafer. In either case, the result is that the chiplet is not properly transferred from the source wafer to the destination substrate.
There is a need, therefore, for tether structures and micro-transfer printing methods that efficiently, accurately, and precisely enable the transfer of a wide variety of micro-devices from a source wafer to a destination substrate with high yields.
In one aspect, the present invention is directed to a micro-device structure comprises a source substrate comprising sacrificial portions laterally spaced apart by anchors. At least a portion (e.g., part or segment) of each sacrificial portion is exposed through an opening. The micro-device is disposed exclusively in direct contact with each sacrificial portion and is laterally attached to an anchor by a multi-layer tether.
In some embodiments of the present invention, a multi-layer tether is a bilayer tether consisting essentially of two tether layers. In some embodiments of the present invention, a multi-layer tether has more than two tether layers, for example three, four, or more tether layers. A multi-layer tether can comprise a first tether layer adjacent to a source substrate and a second tether layer on a side of the first tether layer opposite the source substrate. The first tether layer can extend over at least a portion of a micro-device, the second tether layer can extend over at least a portion of the micro-device, or the first tether layer can extend over at least a first portion of the micro-device and the second tether layer can extend over at least a second portion of the micro-device. The first and second portions can be the same portion of the micro-device or different portions.
In some embodiments, a multi-layer tether comprises an oxide, a nitride, or both an oxide and a nitride. In some embodiments, the multi-layer tether comprises a first tether layer comprising silicon dioxide and a second tether layer comprising silicon nitride. In some embodiments, the first tether layer of silicon dioxide is disposed between the second tether layer of silicon nitride and the sacrificial portion. In some embodiments, the first tether layer, the second tether layer, or both the first tether layer and the second tether layer encapsulate the micro-device. In some embodiments, a first tether layer is thicker than a second tether layer. In some embodiments, the first tether layer is 1.5 to 3 times as thick as the second tether layer, for example twice as thick.
In certain embodiments of the present invention, each micro-device comprises one or more contact pads and a first tether layer encapsulates each micro-device except for one or more contact pads and a second tether layer encapsulates each micro-device including the one or more contact pads.
In some embodiments, sacrificial portions comprise a sacrificial material that is a same material as a material of a source substrate, and the same sacrificial material is an anisotropically etchable material. In some embodiments, sacrificial portions comprise a sacrificial material that is a different material from a material of the source substrate, and the sacrificial material is differentially etchable from the material of the source substrate.
In some embodiments of the present invention, micro-devices have a thickness greater than or equal to 5 μm, 10 μm, 15 μm, 20 μm, or 50 μm. In some embodiments of the present invention, the micro-devices have a thickness in the range of 16-17 μm. In some embodiments of the present invention, micro-devices have one or more of a length greater than or equal to 250 μm, 500 μm, or 1000 μm and a width greater than or equal to 250 μm, 500 μm, or 1000 μm. In some embodiments of the present invention, micro-devices have at least one of a length and a width that is two to four times a length of the multi-layer tether, where a length of the micro-devices and tethers is longer than the width and is taken in a direction substantially parallel to an extent or surface of the source substrate.
In some embodiments of the present invention, micro-devices are laterally attached to the one of the anchors only by a single multi-layer tether. In some embodiments, the micro-devices are laterally attached to a second one of the anchors by a second tether. The second tether can be disposed on an opposite side of the micro-device from the first multi-layer tether. The second tether can be a multi-layer tether.
In another aspect, the present invention is directed to a method of making a micro-device structure comprising: providing a source substrate comprising sacrificial portions spaced apart by anchors, disposing micro-devices in association with the source substrate such that each micro-device is disposed exclusively on, in, or over a sacrificial portion, depositing a first tether layer over at least a portion of the source substrate and the micro-devices, depositing a second tether layer over the first tether layer, and patterning the first tether layer and the second tether layer to form (i) a multi-layer tether for each micro-device such that the multi-layer tether laterally attaches the micro-device to an anchor, and (ii) an opening exposing each sacrificial portion. In some methods, the first tether layer and the second tether layer are each patterned to expose contact pads provided in each micro-device in separate steps.
In some embodiments of the present invention, the method comprises etching sacrificial portions to release micro-devices from a source substrate. In some embodiments, each micro-device comprises one or more contact pads, deposition of the first tether layer is an unpatterned blanket deposition, and the method comprises removing the first tether layer at least from the one or more contact pads of each micro-device before depositing the second tether layer over the first layer.
In some embodiments, the second tether layer deposition is an unpatterned blanket deposition. Some embodiments of the present invention comprise removing the second tether layer after patterning the first tether layer and the second tether layer, for example after etching the sacrificial portions and before micro-transfer printing the micro-devices.
In some embodiments of the present invention, the method comprises contacting micro-devices on a source substrate with a stamp to adhere the micro-devices to the stamp, removing the stamp and the micro-devices from the source substrate, adhering the micro-devices to a destination substrate, and removing the stamp from the destination substrate, to micro-transfer print the micro-devices from the source substrate to the destination substrate.
In another aspect, the present invention is directed to a micro-device structure comprises: a source substrate comprising anchors that are spaced apart and recessed portions between the anchors; and a micro-device disposed exclusively over each of the recessed portions and laterally attached to one of the anchors by a multi-layer tether, thereby defining a gap between the micro-device and the source substrate, wherein the gap is exposed through an opening.
In some embodiments, the multi-layer tether comprises a first tether layer comprising silicon dioxide and a second tether layer comprising silicon nitride.
In some embodiments, the multi-layer tether comprises a first tether layer adjacent to the source substrate and a second tether layer on a side of the first tether layer opposite the source substrate, wherein the first tether layer extends over at least a portion of the micro-device, wherein the second tether layer extends over at least a portion of the micro-device, or wherein the first tether layer extends over at least a first portion of the micro-device and the second tether layer extends over at least a second portion of the micro-device. In some embodiments, the micro-device comprises one or more contact pads and the first tether layer encapsulates the micro-device except for the one or more contact pads and the second tether layer encapsulates the micro-device including the one or more contact pads.
In some embodiments, the micro-device has at least one of a length greater than or equal to 250 μm, 500 μm, or 1000 μm, a width greater than or equal to 250 μm, 500 μm, or 1000 μm, and a thickness greater than or equal to 5 μm, 10 μm, 15 μm, 20 μm, or 50 μm.
Certain embodiments of the present invention provide tether structures and micro-transfer printing methods that efficiently, accurately, and precisely enable the transfer of a wide variety of micro-devices from a source wafer to a destination substrate with high yields.
The foregoing and other objects, aspects, features, and advantages of the present disclosure will become more apparent and better understood by referring to the following description taken in conjunction with the accompanying drawings, in which:
The features and advantages of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and/or structurally similar elements. The figures are not drawn to scale since the variation in size of various elements in the Figures is too great to permit depiction to scale.
Certain embodiments of the present invention provide tether structures and micro-transfer printing methods that efficiently, accurately, and precisely enable the transfer of a wide variety of micro-devices from a source wafer to a destination substrate with high yields. In particular, certain embodiments of the present invention provide tether structures useful for micro-transfer printing relatively large micro-devices, for example devices having a width or length, or both, equal to or greater than 250 μm, 400 μm, 500 μm, 600 μm, 800 μm, 1 mm, 2 mm, or 5 mm. In some embodiments, micro-devices have a thickness greater than or equal to 5 μm, 10 μm, 15 μm, 20 μm, or 50 μm. In some embodiments, micro-devices have a thickness that is in the range of about 16-17 μm.
According to certain embodiments of the present invention and as illustrated in
A source wafer 10 can also be a source substrate 10 and can be any of a wide variety of relatively flat, stable materials suitable for photolithographic or integrated circuit processing, for example glass, plastic, a crystalline semiconductor such as silicon, a compound semiconductor that comprises materials such as gallium nitride or gallium arsenide, quartz, or sapphire, or any suitable substrate or wafer material.
In some embodiments, sacrificial portions 12 are anisotropically etchable designated portions of a source wafer 10, for example portions of a crystalline semiconductor material on a process side of the source wafer 10. In such embodiments, sacrificial portions 12 comprise a sacrificial material that is a same material as a source substrate material. In some embodiments, a source wafer 10 comprises a multi-layer structure including a layer of material on a process side of the source wafer 10 that is differentially etchable from a remainder of the source substrate 10. In some such embodiments, sacrificial portions 12 can comprise a sacrificial material that is a different material from another material of a source substrate 10. The differentially etchable layer can be a patterned layer defining sacrificial portions 12 and can comprise a material that is differentially etchable from other layers of a source wafer 10 and from a micro-device 20. For example, a source wafer 10 can be a semiconductor, glass, quartz, or sapphire source wafer 10 and sacrificial portions 12 can comprise an oxide such as silicon dioxide or a nitride.
Sacrificial portions 12 are laterally distributed over a process side of a source wafer 10 and are separated by anchors 18. Anchors 18 can simply be portions of the source wafer 10 that are not etched or otherwise removed from the source wafer 10 during processing. The processing can be photolithographic or integrated circuit processing using, for example, methods and materials known in the art. A sacrificial portion 12 can be etched, thereby defining a gap 13 between a micro-device 20 and a source substrate 10, particularly after the sacrificial portion 12 is etched to remove material from the sacrificial portion 12. After etching, micro-devices 20 are disposed exclusively over recessed portions 15 of the source substrate 10 (e.g., between anchors 18).
Micro-devices 20 can be any useful structure intended for micro-transfer printing and comprise any material or structure useful for the intended purpose of the micro-devices 20. Micro-devices 20 can be electronic, mechanical, or optical structures, can be passive or active, or can be integrated circuits, electronic devices, or opto-electronic devices. It is contemplated that there is no inherent limit to the type, function, or materials of micro-devices 20. Micro-devices 20 can comprise a same material as a material of a source substrate 10.
Each micro-device 20 is disposed exclusively in direct contact with a sacrificial portion 12 of a source substrate 10 so that, when the sacrificial portion 12 is etched, the volume that was occupied by the sacrificial portion 12 defines a gap 13 between the micro-device 20 and the source substrate 10 and the micro-device 20 is suspended over the gap 13 by one or more tethers 16 (e.g., as shown in
Tethers 16 are structures physically connecting each micro-device 20 to an anchor 18. In the present disclosure, a tether 16 can refer to a multi-layer tether 16, a bi-layer tether 16, or a tether 16 comprising a single layer. Each micro-device 20 can be physically connected, for example laterally attached, by one or more, for example two, multi-layer tethers 16 to anchors 18. Multi-layer tethers 16 can comprise materials that are part of an anchor 18, part of a micro-device 20, or can be other materials, including materials that permanently or temporarily encapsulate a micro-device 20. In some embodiments of the present invention, micro-devices 20 are laterally attached to anchors 18 and a source substrate 10 only by a multi-layer tether 16 after the semiconductor portions are etched to define a gap 13 (e.g., such that etching defines the multi-layer tether 16). In some embodiments of the present invention, a desired ratio of a length of a multi-layer tether 16 along a side of a micro-device 20 can depend on a size of the micro-device 20. Thus, according to some embodiments of the present invention, a micro-device 20 has at least one of a length and a width that is two to four times (or more) a length of a multi-layer tether 16 that is attached to the micro-device 20. In some embodiments, a micro-device 20 has a length that is substantially three times a length of the multi-layer tether 16, where a length of a multi-layer tether 16 and a micro-device 20 is taken in a direction L orthogonal to the direction W of an anchor 18 from a micro-device 20 (as shown in
A multi-layer tether 16 comprises a plurality of layers. According to some embodiments of the present invention, a multi-layer tether 16 is a bi-layer tether 16 comprising only two layers. In some embodiments of the present invention, a multi-layer tether 16 consists essentially of only two layers, for example a first tether layer 30 adjacent to a source wafer 10 and a second tether layer 40 on a side of the first tether layer 30 opposite to the source wafer 10, as shown in
In some embodiments of the present invention, a multi-layer tether 16 comprises an oxide, a nitride, or both an oxide and a nitride. The multi-layer tether 16 can comprise a first tether layer 30 comprising silicon dioxide and a second tether layer 40 comprising silicon nitride. The silicon dioxide first tether layer 30 can be adjacent to a source wafer 10 or sacrificial portion 12 and the silicon nitride second tether layer 40 can be on a side of the silicon dioxide first tether layer 30 opposite the source wafer 10 or sacrificial portion 12. In such a case, the first tether layer 30 of silicon dioxide is disposed between the second tether layer 40 of silicon nitride and the sacrificial portion 12 or sacrificial portion 12.
In some embodiments of the present invention, a first tether layer 30 extends over at least a portion of a micro-device 20, a second tether layer 40 extends over at least a portion of a micro-device 20, or a first tether layer 30 extends over at least a first portion of a micro-device 20 and a second tether layer 40 extends over at least a second portion of the micro-device 20. The first and second portions can be the same portion or different portions. In some embodiments, a first tether layer 30, a second tether layer 40, or both the first tether layer 30 and the second tether layer 40 encapsulate a micro-device 20. An encapsulation layer can protect a micro-device 20 (e.g., the process side thereof, other portion thereof, or the entirety thereof) from the environment, for example from photolithographic processing gases or liquids or from environmental gases such as air, oxygen, nitrogen, and ozone, environmental liquids such as water, or particulate contamination such as dust or other airborne particles.
In some embodiments in which micro-devices 20 each comprise one or more contact pads 22, a first tether layer 30 can encapsulate the micro-devices 20 except for the one or more contact pads 22 and a second tether layer 40 can encapsulate the micro-device 20 including the one or more contact pads 22.
Referring to the
As shown in
In step 120, and as shown in
Generally, a second deposition can be, but does not need to be, made using a second deposition method. According to some embodiments of the present invention, deposition of a first tether layer 30 and deposition of a second tether layer 40 are done using at least partially different deposition methods or the second deposition method deposits a different material that has a different deposited structure from the first deposition method. For example, a first tether layer 30 can be deposited using PECVD with a continuous plasma generation method having one frequency to deposit silicon dioxide and a second tether layer 40 can be deposited using PECVD using a pulsed plasma generation method with two different frequencies to deposit silicon nitride. Two different deposition methods of two different materials can form first and second tether layers 30, 40 with different attributes and structures. In step 125 and as shown in
In step 130, and as shown in
In step 135, and as shown in
Micro-transfer printing micro-devices 20 comprising different materials from different source wafers 10 to a common destination substrate with one or more stamps 50 enables the construction of heterogeneous micro-systems useful in applications for which a small size and a variety of device structures and materials are desirable. The use of a multi-layer tether 16 enables micro-transfer printing with a wider variety of micro-devices 20 sizes, types, and materials, (in particular, larger micro-devices 20) thereby realizing a wider variety of micro-systems.
Certain embodiments of the present invention provide advantages in forming micro-transfer printable micro-devices 20 that are relatively thicker (for example greater than or equal to 10 μm thick, greater than or equal to 15 μm thick, or greater than or equal to 20 μm thick, for example about 16-17 μm thick) than other micro-devices 20 (for example less than or equal to 10 μm thick). Because of the increased thickness of the micro-devices 20, the deposition of selectively etchable materials, such as silicon dioxide, useful in constructing tethers 16 can be problematic. The greater thickness of micro-devices 20 form taller micro-device sidewalls 25 that can obscure portions of the source substrate 10, especially between micro-devices 20 and anchors 18, inhibiting a conformal and consistent deposition of a first tether layer 30, thus preventing a continuous tether-to-device interface structure. Referring to the micrograph of
According to embodiments of the present invention, therefore, a second tether layer 40 is deposited using different materials or different deposition methods or parameters from the first tether layer 30. Because the deposition process and materials are different, the second tether layer 40 fills in areas of the source wafer 10 that can be discontinuous and were not adequately coated with the first deposition method, as shown in
Furthermore, certain embodiments of the present invention provide improved manufacturing efficiency and flexibility. Photolithographic patterning typically requires coating a rather viscous photoresist liquid over the surface to be patterned, exposing the liquid to a patterned mask to form a patterned layer, etching the patterned layer and an underlying layer, and then stripping (removing) the patterned layer. If micro-devices 20 are poorly attached to a source substrate 10 (for example with a single layer tether 16 consisting essentially of only a first tether layer 30) and the micro-devices 20 have been released by etching the sacrificial portion 12, the photolithographic patterning process (especially a coating process or any contact masking process) can remove or disturb the micro-devices 20 attached to the source substrate 10. Hence, patterning the first tether layer 30 to open the contact pads 22 after the micro-devices 20 have been released is problematic, as shown in
If contact pads 22 are opened (e.g., exposed) before micro-devices 20 are released, an etchant used to etch sacrificial portions 12 can attack a contact pad 22 material, damaging contact pads 22 and degrading any subsequent electrical contact to micro-devices 20. In an alternative process, contact pads 22 are opened (e.g., exposed) after micro-devices 20 have been micro-transfer printed to a destination substrate, but this requires an additional process step and a much greater quantity of expensive patterning materials and more expensive photolithographic equipment (because a destination substrate is typically much larger than a source substrate 10). Moreover, removing a first or second tether layer 30, 40 after micro-devices 20 are micro-transfer printed onto the destination substrate can damage other devices on the destination substrate that are susceptible to the layer removal process (e.g., an etchant removing a first or second tether layer 30, 40 on the destination substrate could undesirably etch other devices or structures on the destination substrate or the destination substrate itself). By opening contact pads 22 before etching the sacrificial portion 12 and releasing the micro-devices 20 and using a blanket coated second tether layer 40 during the sacrificial portion 12 etch, the contact pads 22 are protected. If performed, selective removing of the blanket-coated second tether layer 40 after the etch step (130) does not require photolithographic patterning and so avoids the problems of photo-resist deposition, any contact masks, and additional etching required. Therefore, some embodiments of the present invention require fewer process steps and may utilize steps less likely to possibly cause damage.
According to some embodiments of the present invention, micro-devices 20 can be any one or more of integrated circuits, sensors, and organic or inorganic light-emitting diodes. U.S. Pat. No. 6,825,559 describes methods of making micro-transfer-printable inorganic micro-devices 20, the disclosure of which is hereby incorporated by reference.
Structures and elements in accordance with certain embodiments of the present invention can be made and assembled using micro-transfer printing methods and materials. In some embodiments, micro-devices 20 are prepared on a native source wafer 10, for example a sapphire wafer with compound semiconductors such as GaN or silicon wafers with CMOS circuits thereon, each type of micro-device 20 prepared on a different source wafer 10 and released for micro-transfer printing with one or more micro-device multi-layer tethers 16 physically connecting the micro-device sidewall 25 of each micro-device 20 to an anchor 18 of the source wafer 10. In certain embodiments, micro-devices 20 are then contacted with a micro-transfer printing stamp 50 to fracture, separate, or otherwise break micro-device tethers 16 and adhere micro-devices 20 to a transfer stamp 50. The transfer stamp 50 then contacts micro-devices 20 to a destination substrate, to which micro-devices 20 are then adhered.
For a discussion of micro-transfer printing techniques see, U.S. Pat. Nos. 8,722,458, 7,622,367 and 8,506,867, the disclosure of each of which are hereby incorporated by reference. Methods of forming micro-transfer printable structures are described, for example, in the paper AMOLED Displays using Transfer-Printed Integrated Circuits (Journal of the Society for Information Display, 2011, DOI #10.1889/JSID19.4.335, 1071-0922/11/1904-0335, pages 335-341) and U.S. Pat. No. 8,889,485. Micro-transfer printing using compound micro-assembly structures and methods can also be used with certain embodiments of the present invention, for example, as described in U.S. patent application Ser. No. 14/822,868, filed Aug. 10, 2015, entitled Compound Micro-Assembly Strategies and Devices, the disclosure of which is hereby incorporated by reference in its entirety. Additional details useful in understanding and performing certain embodiments of the present invention are described in U.S. patent application Ser. No. 14/743,981, filed Jun. 18, 2015, entitled Micro Assembled LED Displays and Lighting Elements, the disclosure of which is hereby incorporated by reference in its entirety.
As is understood by those skilled in the art, the terms “over”, “under”, “above”, “below”, “beneath”, and “on” are relative terms and can be interchanged in reference to different orientations of the layers, elements, and substrates included in the present invention. For example, a first layer on a second layer, in some embodiments means a first layer directly on and in contact with a second layer. In other embodiments, a first layer on a second layer can include another layer there between.
Having described certain embodiments, it will now become apparent to one of skill in the art that other embodiments incorporating the concepts of the disclosure may be used. Therefore, the invention should not be limited to the described embodiments, but rather should be limited only by the spirit and scope of the following claims.
Throughout the description, where apparatus and systems are described as having, including, or comprising specific components, or where processes and methods are described as having, including, or comprising specific steps, it is contemplated that, additionally, there are apparatus, and systems of the disclosed technology that consist essentially of, or consist of, the recited components, and that there are processes and methods according to the disclosed technology that consist essentially of, or consist of, the recited processing steps.
It should be understood that the order of steps or order for performing certain action is immaterial so long as the disclosed technology remains operable. Moreover, two or more steps or actions in some circumstances can be conducted simultaneously. The invention has been described in detail with particular reference to certain embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.
| Number | Name | Date | Kind |
|---|---|---|---|
| 3673471 | Klein et al. | Jun 1972 | A |
| 5475224 | Koh | Dec 1995 | A |
| 5621555 | Park | Apr 1997 | A |
| 5815303 | Berlin | Sep 1998 | A |
| 5882532 | Field et al. | Mar 1999 | A |
| 6051472 | Abiko et al. | Apr 2000 | A |
| 6142358 | Cohn et al. | Nov 2000 | A |
| 6278242 | Cok et al. | Aug 2001 | B1 |
| 6577367 | Kim | Jun 2003 | B2 |
| 6717560 | Cok et al. | Apr 2004 | B2 |
| 6756576 | McElroy et al. | Jun 2004 | B1 |
| 6933532 | Arnold et al. | Aug 2005 | B2 |
| 7129457 | McElroy et al. | Oct 2006 | B2 |
| 7195733 | Rogers et al. | Mar 2007 | B2 |
| 7288753 | Cok | Oct 2007 | B2 |
| 7354801 | Sugiyama et al. | Apr 2008 | B2 |
| 7399693 | Sekiguchi et al. | Jul 2008 | B2 |
| 7521292 | Rogers et al. | Apr 2009 | B2 |
| 7557367 | Rogers et al. | Jul 2009 | B2 |
| 7586497 | Boroson et al. | Sep 2009 | B2 |
| 7622367 | Nuzzo et al. | Nov 2009 | B1 |
| 7662545 | Nuzzo et al. | Feb 2010 | B2 |
| 7704684 | Rogers et al. | Apr 2010 | B2 |
| 7799699 | Nuzzo et al. | Sep 2010 | B2 |
| 7816856 | Cok et al. | Oct 2010 | B2 |
| 7893612 | Cok | Feb 2011 | B2 |
| 7927976 | Menard | Apr 2011 | B2 |
| 7932123 | Rogers et al. | Apr 2011 | B2 |
| 7943491 | Nuzzo et al. | May 2011 | B2 |
| 7972875 | Rogers et al. | Jul 2011 | B2 |
| 7982296 | Nuzzo et al. | Jul 2011 | B2 |
| 7999454 | Winters et al. | Aug 2011 | B2 |
| 8029139 | Ellinger et al. | Oct 2011 | B2 |
| 8039847 | Nuzzo et al. | Oct 2011 | B2 |
| 8198621 | Rogers et al. | Jun 2012 | B2 |
| 8207547 | Lin | Jun 2012 | B2 |
| 8261660 | Menard | Sep 2012 | B2 |
| 8333860 | Bibl et al. | Dec 2012 | B1 |
| 8334545 | Levermore et al. | Dec 2012 | B2 |
| 8394706 | Nuzzo et al. | Mar 2013 | B2 |
| 8440546 | Nuzzo et al. | May 2013 | B2 |
| 8470701 | Rogers et al. | Jun 2013 | B2 |
| 8502192 | Kwak et al. | Aug 2013 | B2 |
| 8506867 | Menard | Aug 2013 | B2 |
| 8664699 | Nuzzo et al. | Mar 2014 | B2 |
| 8686447 | Tomoda et al. | Apr 2014 | B2 |
| 8722458 | Rogers et al. | May 2014 | B2 |
| 8754396 | Rogers et al. | Jun 2014 | B2 |
| 8766970 | Chien et al. | Jul 2014 | B2 |
| 8779484 | Shen et al. | Jul 2014 | B2 |
| 8791474 | Bibl et al. | Jul 2014 | B1 |
| 8794501 | Bibl et al. | Aug 2014 | B2 |
| 8803857 | Cok | Aug 2014 | B2 |
| 8817369 | Daiku | Aug 2014 | B2 |
| 8835940 | Hu et al. | Sep 2014 | B2 |
| 8854294 | Sakariya | Oct 2014 | B2 |
| 8877648 | Bower et al. | Nov 2014 | B2 |
| 8889485 | Bower | Nov 2014 | B2 |
| 8895406 | Rogers et al. | Nov 2014 | B2 |
| 8934259 | Bower et al. | Jan 2015 | B2 |
| 8987765 | Bibl et al. | Mar 2015 | B2 |
| 9142468 | Bower et al. | Sep 2015 | B2 |
| 9161448 | Menard et al. | Oct 2015 | B2 |
| 9355854 | Meitl et al. | May 2016 | B2 |
| 9368683 | Meitl | Jun 2016 | B1 |
| 9434150 | Bower et al. | Sep 2016 | B2 |
| 9520537 | Bower et al. | Dec 2016 | B2 |
| 9589944 | Higginson et al. | Mar 2017 | B2 |
| 9601356 | Bower et al. | Mar 2017 | B2 |
| 9923133 | Bower et al. | Mar 2018 | B2 |
| 9929053 | Bower et al. | Mar 2018 | B2 |
| 9947584 | Bower et al. | Apr 2018 | B2 |
| 20030062580 | Sato et al. | Apr 2003 | A1 |
| 20030141570 | Chen et al. | Jul 2003 | A1 |
| 20060063309 | Sugiyama et al. | Mar 2006 | A1 |
| 20060079010 | Hara et al. | Apr 2006 | A1 |
| 20060145177 | Hagimoto et al. | Jul 2006 | A1 |
| 20070032089 | Nuzzo et al. | Feb 2007 | A1 |
| 20070173034 | Tsurume et al. | Jul 2007 | A1 |
| 20070281556 | Elliott et al. | Dec 2007 | A1 |
| 20080108171 | Rogers et al. | May 2008 | A1 |
| 20100139368 | Kotovsky | Jun 2010 | A1 |
| 20100248484 | Bower et al. | Sep 2010 | A1 |
| 20100306993 | Mayyas et al. | Dec 2010 | A1 |
| 20100317132 | Rogers et al. | Dec 2010 | A1 |
| 20100326518 | Juso et al. | Dec 2010 | A1 |
| 20120228669 | Bower et al. | Sep 2012 | A1 |
| 20120314388 | Bower et al. | Dec 2012 | A1 |
| 20130069275 | Menard et al. | Mar 2013 | A1 |
| 20130088416 | Smith et al. | Apr 2013 | A1 |
| 20130196474 | Meitl et al. | Aug 2013 | A1 |
| 20130207964 | Fleck et al. | Aug 2013 | A1 |
| 20130221355 | Bower et al. | Aug 2013 | A1 |
| 20130273695 | Menard et al. | Oct 2013 | A1 |
| 20140104243 | Sakariya et al. | Apr 2014 | A1 |
| 20140264763 | Meitl et al. | Sep 2014 | A1 |
| 20140267683 | Bibl et al. | Sep 2014 | A1 |
| 20140340900 | Bathurst et al. | Nov 2014 | A1 |
| 20140367633 | Bibl et al. | Dec 2014 | A1 |
| 20150028362 | Chan et al. | Jan 2015 | A1 |
| 20150135525 | Bower | May 2015 | A1 |
| 20150137153 | Bibl et al. | May 2015 | A1 |
| 20150137187 | Aoki et al. | May 2015 | A1 |
| 20150371874 | Bower et al. | Dec 2015 | A1 |
| 20150372053 | Bower et al. | Dec 2015 | A1 |
| 20160020131 | Bower et al. | Jan 2016 | A1 |
| 20160086855 | Bower et al. | Mar 2016 | A1 |
| 20160093600 | Bower et al. | Mar 2016 | A1 |
| 20170047306 | Meitl et al. | Feb 2017 | A1 |
| 20170154819 | Bower et al. | Jun 2017 | A1 |
| 20170173852 | Moore et al. | Jun 2017 | A1 |
| 20170256521 | Cok et al. | Sep 2017 | A1 |
| 20180096964 | Bonafede et al. | Apr 2018 | A1 |
| 20190051552 | Bower et al. | Feb 2019 | A1 |
| Number | Date | Country |
|---|---|---|
| 2005108943 | Apr 2005 | JP |
| 2005259912 | Sep 2005 | JP |
| 2006108441 | Apr 2006 | JP |
| 2009105450 | May 2009 | JP |
| 2011066130 | Mar 2011 | JP |
| WO-2008036837 | Mar 2008 | WO |
| WO-2008103931 | Aug 2008 | WO |
| WO-2011123285 | Oct 2011 | WO |
| WO-2015193435 | Dec 2015 | WO |
| Entry |
|---|
| Cok, R. S. et al., AMOLED displays with transfer-printed integrated circuits, Journal of the SID, 19(4):335-341, (2011). |
| Cok, R. S. et al., Inorganic light-emitting diode displays using micro-transfer printing, Journal of the SID, 25(10):589-609, (2017). |
| Delmdahl, R. et al., Large-area laser-lift-off processing in microelectronics, Physics Procedia 41:241-248 (2013). |
| Number | Date | Country | |
|---|---|---|---|
| 20190385885 A1 | Dec 2019 | US |
