Claims
- 1. A non-volatile semiconductor memory comprising a peripheral circuit zone and a memory zone including a number of memory cells each having a floating gate and a control gate, an interlayer insulator film covering said control gate of said number of memory cells in said memory zone and a gate electrode formed in said peripheral circuit zone, a contact hole which is formed through said interlayer insulator film to reach said gate electrode formed in said peripheral circuit zone and which is filled with a first conducting material, and a groove which is formed in said interlayer insulator film to extend along a word line which constitutes said control gate of a plurality of memory cells arranged in one line, said groove penetrating through said interlayer insulator film to reach said control gate of said plurality of memory cells, said groove being filled with a second conducting material so that a plate-shaped contact is formed in said groove.
- 2. A non-volatile semiconductor memory claimed in claim 1 wherein said interlayer insulator film is formed of a multi-layer insulator film of a BPSG (borophosphosilicate glass) film, a silicon nitride film and a silicon oxide film stacked in the named order.
- 3. A non-volatile semiconductor memory claimed in claim 2 wherein said first conducting material includes at least tungsten, and said second conducting material includes at least a metal selected from the group consisting of aluminum and copper.
- 4. A non-volatile semiconductor memory claimed in claim 1 wherein said first conducting material includes at least tungsten, and said second conducting material includes at least a metal selected from the group consisting of aluminum and copper.
- 5. A non-volatile semiconductor memory claimed in claim 1, further including an interconnection formed on said interlayer insulator film to extend on said plate-shaped contact over the whole length of said plate-shaped contact, so that said interconnection and said plate-shaped contact are electrically connected in parallel to each other over the whole length of said plate-shaped contact, said interconnection being formed of the same material as said second conducting material.
- 6. A non-volatile semiconductor memory claimed in claim 5 wherein said second conducting material has a resistivity smaller than that of said first conducting material.
- 7. A non-volatile semiconductor memory claimed in claim 5, wherein said interconnection and said plate-shaped contact are integral with each other with no boundary between said interconnection and said plate-shaped contact.
- 8. A non-volatile semiconductor memory claimed in claim 5 wherein said interconnection is embedded in an insulator film formed on said interlayer insulator film.
- 9. A semiconductor memory comprising a number of memory cells each including at least one memory cell transistor having a gate, an interlayer insulator film covering said gate of said at least one memory cell transistor of said number of memory cells, a groove which is formed in said interlayer insulator film to extend along a word line which constitutes said gate of a plurality of memory cell transistors arranged in one line, said groove penetrating through said interlayer insulator film to reach said gate of said plurality of memory cell transistors, said groove being filled with a conducting material so that a plate-shaped contact is formed in said groove, and an interconnection formed on said interlayer insulator film to extend on said plate-shaped contact over the whole length of said plate-shaped contact, so that said interconnection and said plate-shaped contact are electrically connected in parallel to each other over the whole length of said plate-shaped contact, said interconnection being formed of the same material as said conducting material.
- 10. A semiconductor memory claimed in claim 9 further including a peripheral circuit, said interlayer insulator film covering a gate electrode formed in said peripheral circuit, and said conducting material has a resistivity smaller than that of a metal material filled in a contact hole which is formed through said interlayer insulator film to reach said gate electrode formed in said peripheral circuit.
- 11. A non-volatile semiconductor memory claimed in claim 9, wherein said interconnection and said plate-shaped contact are integral with each other with no boundary between said interconnection and said plate-shaped contact.
- 12. A non-volatile semiconductor memory claimed in claim 11 wherein said conducting material includes at least a metal selected from the group consisting of aluminum and copper.
- 13. A non-volatile semiconductor memory comprising a peripheral circuit zone and a memory zone including a number of memory cells each having a floating gate and a control gate, an interlayer insulator film covering said control gate of said number of memory cells in said memory zone and a gate electrode formed in said peripheral circuit zone, a groove which is formed in said interlayer insulator film to extend along a word line which constitutes said control gate of a plurality of memory cells arranged in one line, said groove penetrating through said interlayer insulator film to reach said control gate of said plurality of memory cells, said groove being filled with a conducting material so that a plate-shaped contact is formed in said groove, and an interconnection formed on said interlayer insulator film to extend on said plate-shaped contact over the whole length of said plate-shaped contact, so that said interconnection and said plate-shaped contact are electrically connected in parallel to each other over the whole length of said plate-shaped contact, said interconnection being formed of the same material as said conducting material.
- 14. A non-volatile semiconductor memory claimed in claim 13 wherein said conducting material has a resistivity smaller than that of a metal material filled in a contact hole which is formed through said interlayer insulator film to reach said gate electrode formed in said peripheral circuit zone.
- 15. A non-volatile semiconductor memory claimed in claim 14 wherein said conducting material includes at least a metal selected from the group consisting of aluminum and copper.
- 16. A non-volatile semiconductor memory claimed in claim 13, wherein said interconnection and said plate-shaped contact are integral with each other with no boundary between said interconnection and said plate-shaped contact.
- 17. A non-volatile semiconductor memory claimed in claim 13 wherein said conducting material includes at least a metal selected from the group consisting of aluminum and copper.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-263834 |
Sep 1998 |
JP |
|
RELATED APPLICATION
[0001] This application is a division of co-pending application Ser. No. 09/399,155, filed on Sep. 20, 1999, the entire contents of which are hereby incorporated by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09399155 |
Sep 1999 |
US |
Child |
09815060 |
Mar 2001 |
US |