Oxime Derivatives And Use Thereof As Latent Acids

Information

  • Patent Application
  • 20080085458
  • Publication Number
    20080085458
  • Date Filed
    July 11, 2005
    18 years ago
  • Date Published
    April 10, 2008
    16 years ago
Abstract
The invention pertain to novel photoacid generator compounds of the formula I, II or III
Description
EXAMPLE 1






63.1 g (0.27 mol) of p-terphenyl are added to 550 ml of CH2Cl2 and cooled by ice bath. To the solution are added 40.1 g (0.30 mol) of AlCl3, followed by dropwise addition of 100 g (0.27 mol) of 7H-dodecafluoroheptanoyl chloride. The reaction mixture is stirred at room temperature overnight, poured into ice water, and extracted with CH2Cl2. The organic phase is washed with water, dried over MgSO4, and concentrated. The crude product is used in the next step without further purification. The structure is confirmed by the 1H-NMR spectrum (CDCl3). δ [ppm]: 6.07 (tt, 1H), 7.39 (t, 1H), 7.48 (t, 2H), 7.65 (d, 2H), 7.74 (s, 4H), 7.81 (d, 2H), 8.17 (d, 2H).







123 g (0.22 mol) of the compound of example 1.1 are dissolved in 650 ml of ethanol. To the solution are added 76.6 g (1.10 mol) of hydroxylammonium chloride and 209.2 g (2.64 mol) of pyridine. The reaction mixture is refluxed overnight, and the solvent is distilled off by a rotary evaporator. The residue is poured into water, and extracted with CH2Cl2. The organic phase is washed with 1 N HCl, water, brine, and is dried over MgSO4. After the MgSO4 is removed by filtration, 220 ml of 1M HCl/CH3CO2H is added to the solution and stirred at room temperature overnight. The reaction mixture is washed with water and brine, dried over MgSO4, and concentrated. The residue is purified by recrystallization from toluene, yielding 65.7 g (0.115 mol; 52%) of the title compound of example 1.2 as a yellow solid. The structure is confirmed by the 1H-NMR and 19F-NMR spectrum (CDCl3). δ [ppm]: 6.05 (tt, 1H), 7.35-7.52 (m, 5H), 7.63-7.77 (m, 8H), 8.55 (br s, 1H), −137.45 (d, 2F), −129.92 (s, 2F), −123.87 (s, 2F), −121.64 (s, 2F), −120.43 (s, 2F), −110.13 (s, 2F). The spectrum indicates that the compound is a single isomer, which is tentatively assigned as E-conformation.







2.0 g (3.49 mmol) of the compound of example 1.2 are dissolved in 40 ml of CH2Cl2 and cooled in an ice bath. To the solution are added 0.53 g (5.23 mmol) of triethylamine, followed by dropwise addition of 0.73 g (3.84 mmol) of p-toluenesulfonyl chloride dissolved in 5 ml of CH2Cl2. The reaction mixture is stirred for 1.5 hours at 0° C., poured into ice water, and extracted with CH2Cl2. The organic phase is washed with 1N HCl and water, dried over MgSO4, and concentrated. The residue is purified by recrystallization from 2-propanol, yielding 1.91 g (2.63 mmol; 75%) of the title compound of example 1.3 as a beige solid with a melting point of 138-140° C. The structure is confirmed by the 1H-NMR spectrum (CDCl3). δ [ppm]: 2.48 (s, 3H), 6.03 (tt, 1H), 7.36-7.41 (m, 5H), 7.48 (t, 2H), 7.63-7.75 (m, 8H), 7.89 (d, 2H).


EXAMPLE 2






45.5 g (0.27 mol) of fluorene are added to 400 ml of CH2Cl2 and cooled by ice bath. To the solution are added 40.1 g (0.30 mol) of AlCl3, followed by dropwise addition of 100 g (0.27 mol) of 7H-dodecafluoroheptanoyl chloride dissolved in 50 ml of CH2Cl2. The reaction mixture is stirred at room temperature overnight, poured into ice wter, and extracted with CH2Cl2. The organic phase is washed with water, dried over MgSO4, and concentrated. The crude product is used in the next step without further purification. The structure is confirmed by the 1H-NMR spectrum (CDCl3). δ [ppm]: 4.00 (s, 2H), 6.07 (tt, 1H), 7.41-7.48 (m, 2H), 7.60-7.65 (m, 1H), 7.87-7.92 (m, 2H), 8.13 (d, 1H), 8.25 (s, 1H).







130 g (0.26 mol) of the compound of example 2.1 are dissolved in 500 ml of ethanol. To the solution are added 43.9 g (0.63 mol) of hydroxylammonium chloride and 124.8 g (1.58 mol) of pyridine. The reaction mixture is refluxed overnight, and the solvent is distilled off by a rotary evaporator. The residue is poured into water, and extracted with CH2Cl2. The organic phase is washed with 1N HCl, water, brine, and is dried over MgSO4. After the MgSO4 is removed by filtration, 260 ml of 1M HCl/CH3CO2H is added to the solution and stirred at room temperature overnight. The reaction mixture is washed with water and brine, dried over MgSO4, and concentrated. The residue is purified by recrystallization from toluene, yielding 114 g (0.22 mol; 86%) of the title compound of example 2.2 as a beige solid with a melting point of 120-121° C. The structure is confirmed by the 1H-NMR spectrum (CDCl3). δ [ppm]: 3.93 (s, 2H), 6.03 (tt, 1H), 7.31-7.43 (m, 3H), 7.53-7.58 (m, 2H), 7.80 (d, 1H), 7.84 (d, 1H). The spectrum indicates that the compound is a single isomer, which is tentatively assigned as E-conformation.







2.0 g (3.49 mmol) of the compound of example 2.2 are dissolved in 15 ml of CH2Cl2 and cooled in an ice bath. To the solution are added 0.449 (4.32 mmol) of triethylamine, followed by dropwise addition of 1.12 g (5.89 mmol) of p-toluenesulfonyl chloride dissolved in 5 ml of CH2Cl2. The reaction mixture is stirred at room temperature overnight, poured into ice water, and extracted with CH2Cl2. The organic phase is washed with 1N HCl and water, dried over MgSO4, and concentrated. The residue is purified by recrystallization from 2-propanol, yielding 2.04 g (3.07 mmol; 78%) of the title compound of example 2.3 as a pale yellow solid with a melting point of 167-168° C. The structure is confirmed by the 1H-NMR and 19F-spectrum (CDCl3). δ [ppm]: 2.43 (s, 3H), 3.95 (s, 2H), 6.03 (tt, 1H), 7.30 (d, 1H), 7.35-7.44 (m, 4H), 7.47 (s, 1H), 7.58 (d, 1H), 7.80-7.90 (m, 4H), −137.45 (d, 2F), −129.90 (s, 2F), −123.88 (s, 2F), −121.55 (s, 2F), −120.29 (s, 2F), −109.57 (s, 2F). The spectrum indicates that the compound is a single isomer, which is tentatively assigned as E-configuration.


EXAMPLES 3-12

The compounds of examples 3 to 12 are obtained according to the method described in examples 1 or 2, using the corresponding educts. The structures and physical data of intermediates and products are listed in table 1.











TABLE 1







Purification,


Ex.
Structure
Physical properties

















3





Recrystallization from 2-propanol1H-NMR and 19F-NMR (CDCl3)δ [ppm]: 1.10 (t, 3H), 1.87-1.98 (m, 2H),3.39 (t, 2H), 3.98 (s, 2H), 6.05 (tt, 1H),7.33-7.43 (m, 3H), 7.54-7.62 (m, 2H), 7.84(d, 1H), 7.88 (d, 1H), −137.40 (d, 2F),−129.74 (s, 2F), −123.80 (s, 2F), −121.43 (s,2F), −120.55 (s, 2F), −109.83 (s, 2F),tentatively assigned as E-configurationWhite solid, mp: 66-68° C.





4





Recrystallization from 2-propanol1H-NMR and 19F-NMR (CDCl3).δ [ppm]: 0.89 (t, 3H), 1.20-1.50 (m, 10H),1.83-1.96 (m, 2H), 3.40 (t, 2H), 3.98 (s,2H), 6.05 (tt, 1H), 7.33-7.48 (m, 3H),7.53-7.63 (m, 2H), 7.88 (d, 1H),−137.47 (d, 2F), −129.75 (s, 2F), −123.81 (s,2F), −121.45 (s, 2F), −120.02 (s, 2F),−109.81 (s, 2F), tentatively assigned asE-configurationWhite solid, mp: 78-79° C.





5





Recrystallization from methanol1H-NMR and 19F-NMR (CDCl3).δ [ppm]: 0.88 (t, 3H), 1.20-1.50 (m, 26H),1.83-1.91 (m, 2H), 3.40 (t, 2H), 3.98 (s, 2H),6.05 (tt, 1H), 7.34-7.46 (m, 3H), 7.53-7.62(m, 2H), 7.82 (d, 1H), 7.87 (d, 1H), −137.41 (d,2F), −129.75 (s, 2F), −123.81 (s, 2F), −121.45(s, 2F), −120.02 (s, 2F), −109.83 (s,2F),tentatively assigned as E-configurationWhite solid, mp: 51-54° C.





6





Recrystallization from 2-propanol1H-NMR and 19F-NMR (CDCl3)δ [ppm]: 3.91 (s, 3H), 3.95 (s, 2H), 6.03(tt, 1H), 7.03 (d, 2H), 7.30 (d, 1H),7.35-7.44 (m, 2H), 7.47 (s, 1H), 7.58 (d, 1H),7.83 (t, 2H), 7.93 (d, 2H), −137.39 (d, 2F),−129.88 (s, 2F), −123.86 (s, 2F), −121.52 (s,2F), −120.24 (s, 2F), −109.51 (s, 2F),tentatively assigned as E-configurationWhite solid, mp: 123-124° C.





7





Recrystallization from 2-propanol1H-NMR and 19F-NMR (CDCl3)δ [ppm]: 3.91 (s, 2H), 4.69 (s, 2H),7.33-7.48 (m, 9H), 7.57 (d, 1H), 7.81 (d, 2H),−66.43 (s, 3F), tentatively assigned asE-configurationBeige solid, mp: 160-162° C.





8





Recrystallization from toluene1H-NMR and 19F-NMR (CDCl3)δ [ppm]: 3.44 (s, 4H), 6.89-6.94 (m, 1H),7.30-7.36 (m, 4H), 7.7.66-7.77 (m, 2H),7.89 (d, 1H), 7.99 (d, 1H), 8.02-8.07 (m,2H), 8.57 (s, 1H), −68.52 (s, 3F),tentatively assigned as E-configurationWhite solid, mp: 180-181° C.





9





Chromatography (ethyl acetate:hexane = 1:3)1H-NMR (CDCl3)δ [ppm]: 2.48 (s, 6H), 6.04 (tt, 2H),7.36-7.41 (m, 6H), 7.44 (d, 2H), 7.52-7.59 (m,3H), 7.67 (t, 2H), 7.88 (d, 4H), 8.04 (s,2H), tentatively assigned as E-configurationWhite solid, mp: 56-59° C.





10





Recrystallization from tert-butyl methyl ether1H-NMR and 19F-NMR (CDCl3)δ [ppm]: 3.92 (s, 4H), 6.02 (tt, 2H), 7.30(d, 2H), 7.34-7.43 (m, 4H), 7.46 (s, 2H),7.56 (d, 2H), 7.77-7.89 (m, 5H), 8.35 (d,2H), 8.58 (s, 1H), −137.52 (d, 4F), −129.81(s, 4F), −123.84 (s, 4F), −121.55 (s, 4F),−120.19 (s, 4F), −109.62 (s, 4F), tentativelyassigned as E-configurationWhite solid, mp: 149-150° C.





11





Chromatography (ethyl acetate:hexane = 1:3)1H-NMR (CDCl3)δ [ppm]: 3.90 (s, 2H), 6.03 (tt, 1H),7.17-7.44 (m, 14H), 7.59 (d, 1H), 7.81 (t, 2H),tentatively assigned as E-configurationYellow resin





12





Chromatography (ethyl acetate:hexane = 1:7)1H-NMR (CDCl3)δ [ppm]: 0.92 (s, 3H), 1.12 (s, 3H),1.40-1.47 (m, 1H), 1.65-1.74 (m, 1H), 1.93-2.16(m, 3H), 2.32-2.45 (m, 2H), 3.36 (d, 1H), 3.84(d, 1H), 3.97 (s, 2H), 6.06 (tt, 1H), 7.35-7.46(m, 3H), 7.56-7.60 (m, 2H), 7.83 (d, 1H), 7.88(d, 1H), tentatively assigned as E-configurationYellow resin









EXAMPLE 13

A chemically amplified positive resist formulation is prepared by mixing the following components:

    • 50.00 parts of a resin binder A (a copolymer of 62 mol-% of p-hydroxystyrene and 38 mol % of p-(1-ethoxyethoxy)styrene, derived from VP8000 (Mw: 11900) provided by Nisso, Japan)
    • 50.00 parts of a resin binder B (a m-cresol Novolak resin, having a Mw of 6592; EP0010A, provided by Asahi Organic Chemicals Industry Co., Japan)
    • 400.00 parts of propylene glycol methyl ether acetate (PGMEA) (provided by Tokyo Kasei, Japan)
    • 4.00 parts of the photoacid generator to be tested


The resist formulation is spin-coated onto a silicone wafer, on which a bottom antireflective coating (XHRiC-11 provided by Nissan Chemical Industries, Japan) is applied beforehand, and soft-baked for 60 seconds at 90° C. on a hotplate to obtain a film thickness of 1000 nm. The resist film is then exposed to i-line radiation of 365 nm wavelength through a narrow band interference filter and a multidensity quartz mask using an Ushio's high-pressure mercury lamp, HB-25106AP, and a mask aligner Canon PLA-501F. The samples then are post-exposure-baked for 60 seconds at 90° C. on a hotplate and developed. The Dose to Clear (E0), which is the dose just sufficient to completely remove the resist film with 60 seconds immersion development in 2.38% aqueous tetramethyl ammonium hydroxide developer (NMD-3 provided by TOK), is determined from the measured contrast curve. The smaller the required dose the higher sensitive is the resist formulation.












TABLE 2







Compound of
Dose to Clear (E0)



example
[mJ/cm2]



















1
2.7



2
14.2



3
4.6



9
0.9










EXAMPLE 14

A chemically amplified positive resist formulation is prepared by mixing the following components:

    • 100.00 parts of a resin binder (a copolymer of 61 mol-% of p-hydroxystyrene and 39 mol-% of t-butyl acrylate, having a Mw of 19460; ®Mamuzen MARUKA LYNCUR PHS/TBA, provided by Maruzen Oil Company, Japan)
    • 0.05 parts of a levelling agent (FC-430, provided by 3M)
    • 500.00 parts of propylene glycol methyl ether acetate (PGMEA) (provided by Tokyo Kasei, Japan)
    • 4.0 parts of the photoacid generator to be tested


The resist formulation is spin coated onto a hexamethyl dimethylsilane-treated silicone wafer at 3000 rpm for 45 seconds and softbaked for 60 seconds at 120° C. on a hotplate to obtain a film thickness of 800 nm. The resist film is then exposed to deep UV radiation of 254 nm wavelength through a narrow band interference filter and a multidensity quartz mask using an Ushio's high pressure mercury lamp, UXM-501MD, and a mask aligner Canon PLA-521. The samples then are post exposure baked for 60 seconds at 120° C. on a hotplate and developed. The exposure intensity is measured with a Unimeter UIT-150 from Ushio. The Dose to Clear (E0), which is the dose just sufficient to completely remove the resist film with 60 seconds immersion development in 1.79% aqueous tetramethyl ammonium hydroxide developer, is determined from the measured contrast curve. The smaller the required dose the more sensitive is the resist formulation. The results are collected in Table 3 and demonstrate that the compositions are suitable for the preparation of positive photoresists.












TABLE 3







Compound of
Dose to Clear (E0)



example
[mJ/cm2]



















1
1.2



2
0.81



3
1.4



4
1.1



5
3.2



6
1.3



7
1.2



8
1.6



9
2.0



10
4.7









Claims
  • 1. A compound of the formula I, II or III
  • 2. A compound of the formula I, II or III according to claim 1, wherein Ar1 is fluorenyl, which is optionally substituted by one or more C1-C18alkyl, OR3 halogen, and/or Ar2; oroptionally the substituents C1-C18alkyl form alkylene bridges from one carbon atom of the fluorenyl ring to another carbon atom of said ring; said alkylene bridges optionally being condensed with further phenyl rings;or Ar1 is biphenylyl or naphthyl both are substituted by one or more C1-C18alkyl, OR3 halogen, and/or Ar2; or optionally the substituents C1-C18alkyl form alkylene bridges from one carbon atom of the biphenylyl or naphthyl ring to another carbon atom of said ring; said alkylene bridges optionally being condensed with further phenyl rings;Ar′1 is heteroarylene, which is unsubstituted or substituted by one or more C1-C18alkyl, OR3, halogen and/or Ar2;R3 is C1-C12alkyl; andAr2 is phenyl.
  • 3. A compound of the formula I, II or III according to claim 1, wherein R1 is C1-C18alkylsulfonyl or phenylsulfonyl, optionally substituted by one or more C1-C18alkyl or OR3, or R1 is naphthylsulfonyl, camphorylsulfonyl, phenyl-C1-C3alkylsulfonyl, or a group
  • 4. A chemically amplified photoresist composition comprising (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and(b) as photosensitive acid donor, at least one compound of the formula I, II or III according to claim 1.
  • 5. A chemically amplified photoresist composition according to claim 4, which is a positive resist.
  • 6. A chemically amplified positive photoresist composition according to claim 5, comprising as component (a) (a1) at least one polymer having an acid-labile group which decomposes in the presence of an acid to increase the solubility in aqueous alkaline developer solution; and/or(a2) at least one monomeric or oligomeric dissolution inhibitor having an acid-labile group which decomposes in the presence of an acid to increase the solubility in aqueous alkaline developer solution; and/or(a3) at least one alkali-soluble monomeric, oligomeric or polymeric compound.
  • 7. A chemically amplified photoresist composition according to claim 4, which is a negative resist.
  • 8. A chemically amplified negative photoresist composition according to claim 7, comprising as component (a) (a4) an alkali-soluble resin as binder;(a5) a component which, when catalysed by an acid undergoes a crosslinking reaction with itself and/or with the binder.
  • 9. A chemically amplified photoresist composition according to claim 4, in addition to components (a) and (b), comprising further additives (c), further photosensitive acid donor compounds (b1), other photoinitiators (d), and/or sensitizers (e).
  • 10. A process for the preparation of a photoresist by (1) applying to a substrate a composition according to claim 4;(2) post apply baking the composition at temperatures between 60° C. and 160° C.;(3) image-wise irradiating with light of wavelengths between 10 nm and 1500 nm;(4) optionally post exposure baking the composition at temperatures between 60° C. and 160° C.; and(5) developing with a solvent or with an aqueous alkaline developer.
  • 11. A process for the specific preparation of the thermally stable isomer of the oxime ester compounds of formula I II or III according to claim 1 by (1) treating the isomeric mixture of the corresponding free oxime compounds of formula I″ or II″, obtained by conventional methods,
  • 12. A composition comprising (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and(b) as photosensitive acid donor, at least one compound of the formula I, II or III according to claim 1.
  • 13. A method for crosslinking compounds that can be crosslinked under the action of an acid, or for increasing the solubility of the compounds of a composition, which method comprises adding a compound of formula I, II or III according to claim 1 to compositions that can be crosslinked under the action of an acid or to compositions wherein the solubility is increased under the action of an acid and irradiating imagewise or over the whole area with light having a wavelength of 10-1500 nm.
  • 14. A method according to claim 13 for crosslinking compounds that can be crosslinked under the action of an acid.
  • 15. (canceled)
  • 16. A method according to claim 13 for the preparation of pigmented and non-pigmented surface coatings, adhesives, laminating adhesives, structural adhesives, pressure-sensitive adhesives, printing inks, printing plates, relief printing plates, planographic printing plates, intaglio printing plates, processless printing plates, screen printing stencils, dental compositions, colour filters, spacers, electroluminescence displays and liquid crystal displays (LCD), waveguides, optical switches, color proofing systems, resists, photoresists for electronics, electroplating resists, etch resists both for liquid and dry films, solder resist, photoresist materials for a UV and visible laser direct imaging system, photoresist materials for forming dielectric layers in a sequential build-up layer of a printed circuit board, image-recording materials, image-recording materials for recording holographic images, optical information storage or holographic data storage, decolorizing materials, decolorizing materials for image recording materials, image recording materials using microcapsules, magnetic recording materials, micromechanical parts, plating masks, etch masks, glass fibre cable coatings, microelectronic circuits.
  • 17. (canceled)
  • 18. Process according to claim 13 for the preparation of colour filters or chemically amplified resists.
  • 19. A color filter prepared by providing red, green and blue picture elements and a black matrix, all comprising a photosensitive resin and a pigment and/or dye on a transparent substrate and providing a transparent electrode either on the surface of the substrate or on the surface of the color filter layer, wherein said photosensitive resin comprises compounds of formula I, II or III according to claim 1 as photosensitive acid donors.
  • 20. A chemically amplified photoresist composition according to claim 6, in addition to components (a1), (a2), (a3) and (b), comprising further additives (c), further photosensitive acid donor compounds (b1), other photoinitiators (d), and/or sensitizers (e).
  • 21. A chemically amplified photoresist composition according to claim 8, in addition to components (a4), (a5) and (b) comprising further additives (c), further photosensitive acid donor compounds (b1), other photoinitiators (d), and/or sensitizers (e).
Priority Claims (1)
Number Date Country Kind
04103453.9 Jul 2004 EP regional
PCT Information
Filing Document Filing Date Country Kind 371c Date
PCT/EP05/53296 7/11/2005 WO 00 1/17/2007