1. Field of the Invention
The present invention relates to a packaging substrate having a chip embedded therein and a manufacturing method thereof, which can prevent packaging substrate warpage caused by the asymmetric build-up.
2. Description of Related Art
With rigorous development of the electronic industry, the directions of the research in electronic products are turning to high integration and miniaturization to meet the needs for multi-function, high speed operation, and high frequency. Accordingly, the packaging substrate for connecting a plurality of active and non-active components to circuits is evolving from single layer to multi-layers in order to expand spaces of circuit layout to thereby meet the requirements of high wiring density for integrated circuits.
The conventional processes of electronic devices begin first by providing chip carriers suitable to semiconductor chips, such as substrates or lead frames, then the chip carriers are forwarded to semiconductor packaging manufacturers to proceed with the processes of chip disposing, molding, and ball mounting, etc; and finally, electronic devices having the required functions are produced.
A conventional semiconductor package structure is made such that a semiconductor chip is mounted by its back surface on the top surface of the substrate, then the package structure finished through wire bonding, or a semiconductor chip is mounted by the active surface thereof on the top surface of the substrate, thereby finishing a flip-chip package structure, followed by placing solder balls on the back of the substrate to provide electrical connections for a printed packaging substrate. Though high-number I/O connections are achieved in this way, usage on higher frequency and operations at higher speed are restricted due to limited performance of the package structure correspondingly because of lacks of shorter paths of leads.
Accordingly, considerable research has been invested in improvement of a packaging substrates with a chip embedded therein. The chip embedded in a packaging substrate can directly conduct to the electric devices outside, so as to shorten the electric conductive path, reduce the signal loss, protect the signal quality, and improve the ability of high-speed operation.
The conventional structure of a packaging substrate having a chip embedded therein is shown in
So far, in the production, bismaleimide triazine (BT) resin is commonly used as the material of the substrate 11 having a chip 12 embedded therein. Unfortunately, as the built-up structure 16 is formed on one side of the substrate 11, substrate warpage occurs due to the unbalanced stresses from the surface having built-up structure thereon and the opposite surface having not built-up structure thereon. Accordingly, it is difficult to manufacture the packaging substrate, such that the yield is low, and the reliability is poor.
Therefore, using BT resin as the material of the substrate cannot meet the requirements of use because of the substrate warpage and low yield.
In view of the aforementioned problems, the present invention provides a packaging substrate having a chip embedded therein, which comprises: a first aluminum substrate having a first cavity; a second aluminum substrate having a second cavity corresponding to the first cavity; a dielectric layer disposed between the first aluminum substrate and the second aluminum substrate; a chip embedded in the first cavity and the second cavity, having an active surface with a plurality of electrode pads thereon; and one built-up structure disposed on the surface of the first aluminum substrate and the active surface of the chip, wherein the built-up structure has a plurality of conductive vias electrically connecting to the electrode pads.
In the present invention, the substrate warpage is obviously reduced by the assistance of using aluminum or aluminum alloy as the material of the substrate.
In addition, an aluminum oxide layer can be selectively formed on the two surfaces of the first aluminum substrate as well as the second aluminum substrate. The aluminum oxide layers can be formed by any oxidation method, and anodic oxidation is preferred. The aluminum oxide/aluminum complex substrate formed through surface oxidation treatment has improved rigidity, thus further reduce the substrate warpage resulted from the asymmetric built-up structure.
In the present invention, the thicknesses of the first aluminum substrate and the second aluminum substrate are not limited. Preferably, the thickness of the first aluminum substrate, where the built-up structure is formed on, is smaller than that of the second aluminum substrate. Accordingly, after the built-up structure is formed, the packaging substrate is straightened due to the offset stresses from the build-up structure.
In the present invention, the chip can be fixed in the first cavity and the second cavity by using an adhesive material to fill the gap between the chip and the first cavity together with the second cavity, or by expressing through lamination the dielectric layer sandwiched between the first aluminum substrate and the second aluminum substrate to fill the gap between the chip and the first cavity together with the second cavity.
The present invention also provides a method of manufacturing a packaging substrate having a chip embedded therein, which comprises the following steps: (A) providing a first aluminum substrate and a second aluminum substrate; (B) forming a first cavity through the first aluminum substrate and correspondingly a second cavity through the second aluminum substrate; (C) disposing a dielectric layer between the first aluminum substrate and the second aluminum substrate; (D) embedding a chip in the first cavity and the second cavity, wherein the chip has an active surface with a plurality of electrode pads thereon, followed by lamination to combine the two substrates, and to express the dielectric layer to fill the gap between the chip and the first cavity together with the second cavity, to thereby fix the chip in the first cavity and the second cavity; and (E) forming one built-up structure on the surface of the first aluminum substrate and the active surface of the chip, wherein the built-up structure has at least one insulating layer, a circuit layer disposed on the insulating layer, and a plurality of conductive vias, parts of the conductive vias electrically connecting to the electrode pads of the chip.
In method of the present invention, the substrate warpage is obviously reduced by the assistance of using aluminum or aluminum alloy as the material of the substrate, and aluminum alloy is preferred. In addition, an aluminum oxide layer can be selectively formed on the two surfaces of the first aluminum substrate as well as the second aluminum substrate. The aluminum oxide layers can be formed by any oxidation method, and anodic oxidation is preferred. The aluminum oxide/aluminum complex substrate formed through surface oxidation treatment has improved rigidity, thus further reduce the substrate warpage resulted from the asymmetric built-up structure.
Furthermore, the present invention provides another method of manufacturing a packaging substrate having a chip embedded therein, which comprises the following steps: (A) providing a first aluminum substrate and a second aluminum substrate; (B) forming a dielectric layer between the first aluminum substrate and the second aluminum substrate by laminiation to form a complex aluminum substrate; (C) forming a cavity through the complex aluminum substrate; (D) embedding a chip in the cavity, wherein the chip has an active surface with a plurality of electrode pads thereon; and (E) forming one built-up structure on the surface of the first aluminum substrate and the active surface of the chip, wherein the built-up structure has at least one insulating layer, a circuit layer disposed on the insulating layer, and a plurality of conductive vias, parts of the conductive vias electrically connecting to the electrode pads of the chip.
In the method of the present invention, in step (D) an adhesive material fills the gap between the chip and the cavity to fix the chip in the cavity after the chip is embedded therein.
Related details about the above method can easily be known referring to those of the first method, thus not to be described further here.
Other objects, advantages, and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
a to 2e are cross-sectional views of the manufacturing method according to the first embodiment of the present invention;
a to 3e are cross-sectional views of the manufacturing method according to the second embodiment of the present invention;
a to 4e are cross-sectional views of the manufacturing method according to the third embodiment of the present invention; and
a to 5e are cross-sectional views of the manufacturing method according to the fourth embodiment of the present invention.
With reference to
As shown in
After the above steps are completed, a built-up structure 2′ is formed on the upper surface 21a of the first aluminum substrate 21 and the active surface 24a of the chip 24, as shown in
In addition, a solder mask layer 28 is formed on the surface of the built-up structure 2′, having openings 280 to expose the conductive pads 273 of the built-up structure 2′. Finally, solder bumps 29 are formed on the conductive pads 273. Thus, the packaging substrate having a chip embedded therein of this embodiment is completed.
In this embodiment, the thickness (D1) of the first aluminum substrate 21 is smaller that the thickness (D2) of the second aluminum substrate 22, as shown in
With reference to
As shown in
Subsequently, a cavity 30 is formed through the complex aluminum substrate 3, as shown in
After the above steps are completed, a built-up structure 3′ is formed on the upper surface 31a of the first aluminum substrate 31 and the active surface 34a of the chip 34, as shown in
In addition, a solder mask layer 38 is formed on the surface of the built-up structure 3′, having openings 380 to expose the conductive pads 373 of the built-up structure 3′. Finally, solder bumps 39 are formed on the conductive pads 373. Thus, the packaging substrate having the chip embedded therein of this embodiment is completed.
In addition, the thickness (D1) of the first aluminum substrate 31 is smaller that the thickness (D2) of the second aluminum substrate 32, as shown in
The method for manufacturing a packaging substrate having a chip embedded therein of this embodiment is similar to Embodiment 1. Except the two surfaces of the first aluminum substrate and the second aluminum substrate being oxidized to form aluminum oxide layers respectively, all other aspects are approximately the same as those of the Embodiment 1.
With reference to
As shown in
Referring to
The rigidity of the first aluminum substrate 41 and the second aluminum substrate 42 is further improved by forming aluminum oxide layers 412,422 (i.e. ceramic material) through oxidation. Accordingly, the packaging substrate of this embodiment remains straight having a built up structure 4′ on one side thereof.
The method for manufacturing a packaging substrate having a chip embedded therein of this embodiment is similar to Embodiment 2. Except the two surfaces of the first aluminum substrate and the second aluminum substrate being oxidized to form aluminum oxide layers respectively, all other aspects are approximately the same as those of the Embodiment 2.
With reference to
As shown in
Referring to
The rigidity of the first aluminum substrate 51 and the second aluminum substrate 52 is further improved by forming aluminum oxide layers 512,522 (i.e. ceramic material) through oxidation. Accordingly, the packaging substrate of this embodiment remains straight having a built up structure 5′ on one side thereof.
Although the present invention has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the scope of the invention as hereinafter claimed.