Claims
- 1. A conductive pattern layer structure comprising:
- an insulating member comprising polyimide;
- a patterned thin film formed on the insulating member;
- a patterned conductive layer formed on the patterned thin film, said patterned conductive layer comprising copper;
- a patterned Cr barrier layer;
- an insulating layer formed around the patterned Cr barrier layer;
- wherein said patterned Cr barrier layer covers an upper surface and side surfaces of the patterned conductive layer and prevents copper from being diffused into said insulating layer formed around the patterned Cr barrier layer and said patterned Cr barrier layer extending away from said patterned conductive layer side surfaces and along said patterned thin film so as to define at least one patterned Cr barrier layer flange portion.
- 2. The conductive pattern layer structure as claimed in claim 1, wherein said conductive pattern layer structure comprises a layer structure in which the patterned thin film formed on the insulating member and the patterned Cr barrier layer are stacked in that order.
- 3. The conductive pattern layer structure as claimed in claim 1, wherein said patterned thin film comprises:
- a first thin film which is formed on the insulating member and comprises chromium; and
- a second thin film which is formed on the first thin film and comprises copper.
- 4. The conductive pattern-layer structure as claimed in claim 3, wherein said conductive pattern layer structure comprises a layer structure in which the first thin film, the second thin film and the patterned Cr barrier layer are stacked in that order.
- 5. The conductive pattern layer structure according to claim 1, wherein said patterned conductive layer has a first portion and a second portion, said second portion being in contact with said patterned thin film and being wider than said first portion;
- and said flange portions of said patterned Cr barrier layer being formed on said patterned conductive layer second portion provided on said patterned thin film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-289576 |
Nov 1991 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 07/971,226, filed Nov. 4, 1992, now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (3)
Number |
Date |
Country |
257737 |
Mar 1988 |
EPX |
331598 |
Sep 1989 |
EPX |
3-108797 |
May 1991 |
JPX |
Non-Patent Literature Citations (1)
Entry |
IBM Technical Disclosure Bulletin vol. 20, No. 1, Jun. 1977, New York U.S. pp. 77-78 R. E. Ruane "Applicaiton of Immersion Tin as an Etch Mask to Printed-Circuit Lines". |
Continuations (1)
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Number |
Date |
Country |
Parent |
971226 |
Nov 1992 |
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