Patent Application
20050266618
The present invention relates to a plasma processing method for surface modification for the purpose of improving a filling property of resin. The present invention also relates to a method for fabricating an electronic component module by using the plasma processing method. In the fabricating method, resin is filled in between an electronic component and a circuit board. The electronic component is coupled with the circuit board via protruding electrodes interposed therebetween.
In mounting of an electronic component such as a flip chip that is coupled with a circuit board via bumps, which are protruding electrodes formed on the lower surface of the electronic component, a structure for reinforcement by filling resin in a gap between the electronic component and the circuit board is widely used. Furthermore, when this gap is narrow, a filling property of resin is deteriorated. Therefore, prior to filling of resin, various techniques for surface modification by performing plasma processing to surfaces of the circuit board and the electronic component in the gap are well-known.
According to, for example, Japanese Patent Unexamined Publication No. 2000-91373, oxygen gas is used as a gas for plasma discharge. Then, active substances such as oxygen radicals generated by plasma discharge are allowed to enter a gap between an electronic component and a circuit board and brought into contact with the surfaces of the circuit board and the electronic component. Thus, by physical and chemical actions of oxygen radicals, the inner surface of the gap is modified. Consequently, the wettability of the inner surface of the gap with respect to resin is improved and the filling property of resin is improved.
In Japanese Patent Unexamined Publication No. 2001-237256, in the above-mentioned surface modification by using oxygen radicals, pressure conditions of a gas for plasma discharge at the time of plasma processing is optimized. Thus, the processing efficiency is improved. In addition, in Japanese Patent Unexamined Publication No. 2001-110825, a mixed gas containing oxygen and argon is used as a gas for plasma discharge. Thus, a resin surface of inner surface of a gap is roughened, improving the wettability.
In the plasma processing for surface modification, oxygen radicals generated under reduced pressure conditions diffuse and enter the above-mentioned inner surface of the gap from an outer periphery of the electronic component. Oxygen radicals further diffuse toward the central portion in the gap, and are brought into contact with the surface to be processed. In such conventional technologies, however, the following problems arise as the gap between the electronic component and the circuit board becomes narrower and the number of bumps is increased in accordance with the demand for miniaturization of electronic equipment.
That is to say, under conditions where a gap is narrow and the number of bumps is large, it is difficult to allow a sufficient amount of oxygen radical to reach a deep portion of the gap for a short time. Accordingly, in order to achieve a sufficient modification effect, it is necessary to considerably extend the processing time. Therefore, with the surface modification by a conventional plasma processing, in the case where the inside of a micro gap is subjected to processing, it is difficult to obtain a sufficient surface modification effect efficiently.
According to a plasma processing method of the present invention, a surface of a micro gap provided between a first subject to be processed and a second subject to be processed is processed. In this plasma processing method, the first and second subjects to be processed are disposed within a process chamber. Then, the pressure inside the process chamber is reduced and a mixed gas containing oxygen and helium is introduced. In addition, in the pressure-reduced process chamber, plasma is generated so as to process the surfaces of the first and second subjects to be processed which face each other in the micro gap. With this method, a large number of gas particles are allowed to enter the micro gap between the subjects to be processed, and the surface modification can be carried out efficiently. By applying this method to a workpiece having a circuit board and an electronic component in which an electrode on the circuit board is coupled with another electrode on an electronic component, a sealing resin is easily filled in between the circuit board and the component.
Firstly, with reference to
A surface of circuit board 4 is made of ceramic materials, synthetic resin materials, glass, or the like. Electronic component 5 provided with bumps 5A on its lower surface is coupled with circuit board 4 via bumps 5A which are protruding electrodes. Component 5 is a second subject to be processed, which is disposed facing circuit board 4 that is a first subject to be processed with a small gap provided therebetween. The surface of component 5 is covered with synthetic resin materials such as polyimide or inorganic substances such as silicon oxide.
By filling a sealing resin into the micro gap between component 5 and circuit board 4, an electronic component module is produced. Circuit board 4 in
The bottom surface of chamber 1 is provided with two openings 1A and 1B. Opening 1A is coupled with evacuation unit 12 via exhaust valve (hereinafter, referred to as “valve”) 11. By opening valve 11 and driving evacuation unit 12, the inside of chamber 1 is evacuated.
On the other hand, opening 1B is coupled with gas supply unit 14 via gas supply valve (hereinafter, referred to as “valve”) 13. By opening valve 13 and driving gas supply unit 14, the inside of chamber 1 is supplied with gas for plasma discharge. Herein, as the gas for plasma discharge, a mixed gas containing oxygen and helium is used.
To electrode 3, high frequency power supply unit (hereinafter, referred to as “power supply”) 15 is connected. By driving power supply 15, high frequency voltage is applied to between electrode 6 and electrode 3. When power supply 15 is driven in a state in which the inside of chamber 1 is evacuated and then plasma-generating gas is supplied, plasma of the above-mentioned mixed gas is generated in space 8.
Controller 16 controls valves 11 and 13, evacuation unit 12, gas supply unit 14 and power supply 15. When evacuation unit 12 and gas supplying unit 14 are driven, controller 16 controls valves 11 and 13. Thus, the pressure of the gas for plasma discharge in space 8 inside chamber 1 can be controlled arbitrarily.
Next, with reference to
In such a state in which plasma is generated, when circuit board 4 to which component 5 is mounted is placed on electrode 3, a surface of resin materials constituting circuit board 4 and component 5 is partially removed. Alternatively, when these materials are a material other than resin, an organic substance attached to the surface is removed. This is performed by physical action, that is, a sputtering effect in which these gas particles crash into the surface of the subjects to be processed, or chemical action of oxygen radical 23 that is an active substance in gas particles.
In the plasma processing directed to circuit board 4, electrically neutral particles such as oxygen radicals 23 enter the micro gap between the upper surface of circuit board 4 and component 5 as shown in
Component 5 shown in this exemplary embodiment is a multi-pin fine-pitch type flip chip and is mounted to circuit board 4 with a micro gap of 100 μm or less provided therebetween. Accordingly, in a state in which plasma discharge occurs, the entering degree of gas particles such as oxygen radicals 23, which contribute to the surface modification, is low. Furthermore, since gas particles entering the micro gap are prevented from diffusing by a number of bumps 5A, the surface modification effect by plasma processing cannot easily reach the vicinity of the center of the micro gap.
Therefore, in order to secure the surface modification effect by plasma processing, the number of gas particles such as oxygen radicals 23 reaching the surface to be processed is required to increase as many as possible. The number of particles to reach is dependent on the diffusion coefficient of gas particles. The larger the diffusion coefficient is, the more the number of particles to reach is. Therefore, in the plasma processing in which the inside of the micro gap is a subject to be processed, it is desirable to realize a state in which the diffusion coefficient becomes as large as possible.
In plasma processing performed under reduced pressure, gas particles behave as molecular flow, and the diffusion coefficient becomes a larger value as the mass of gas particles is smaller in irrelevant to gas pressure. The relation between the mass of gas particles and the diffusion coefficient hold true even when the gas composition is a single gas or a mixed gas containing plural kinds of gases. That is to say, in a case where a mixed gas is obtained by adding other kinds of gases having a molecular weight smaller than that of a single gas into the single gas, the diffusion coefficient of the thus obtained mixed gas becomes larger than that of the single gas.
In this exemplary embodiment, by using the relation between the mass of gas particles and the diffusion coefficient, the diffusion coefficient is increased so as to increase the number of particles to reach. That is to say, a mixed gas obtained by adding a gas having a molecular weight smaller than that of oxygen gas O2 (molecular weight: 32) into oxygen gas is used as the gas for plasma discharge. As a gas to be added to oxygen gas, helium (molecular weight: 4) is selected. When helium is added to oxygen gas in this way, the diffusion coefficient of the mixed gas obtained by adding helium to oxygen gas is two times or more than the value of the diffusion coefficient of single oxygen gas.
Then, an experiment for obtaining the optimum mixing ratio of helium when the above-mentioned mixed gas is used as a gas for plasma discharge of plasma processing is described with reference to
Dummy chip 30 is placed facing dummy circuit board 40 with micro gap 32 provided therebetween. Micro gap 32 has gap width G corresponding to a mounting gap between circuit board 4 and component 5 in a real workpiece. Gap width G is, for example, 100 μm. Thus, resin pads 31 are located in gap 32. Then, plasma processing is performed by using the plasma processing apparatus shown in
In plasma processing, gas particles such as oxygen radicals 23 having the surface modification effect shown in
Surface positions 37 and 38 of resin pads 31 before and after this plasma processing are measured by displacement meter 33, and difference 39 between surface positions 37 and 38 is calculated. Thus, indicators each showing an amount of the surface of each resin pad 31 removed by plasma processing, that is, an etching amount, is calculated. Such an experiment is carried out by varying the mixing ratios of helium, and indicators of the etching amount in experiments are calculated. Thereby, it is possible to know that the optimum mixing ratio of helium in terms of increasing the diffusion coefficient. Herein, the mixing ratio of helium means the volume percent of helium in the mixed gas. Note here that the pressure condition of the plasma processing in this experiment is 80 Pa.
According to such experimental results, it is preferable that the range of the optimum mixing ratio of helium is set to region B from the viewpoint of increasing the diffusion coefficient. The indicator value of the average etching amount in region B is 140 nm. That is to say, as shown in
Next, with reference to
In plasma processing, gas particles such as oxygen radicals 23 having the surface modification effect shown in
In this experiment, at two measurement points 43 and 44 provided on dummy chip 34 as shown in
In plasma processing using the conventional process, at first measurement point 43 that is close to an inlet of the micro gap, contact angles of less than 10° are obtained in any times. These values are less than an acceptable upper limit contact angle as a criterion. As the practical acceptable upper limit contact angle, 20°, which was obtained empirically for securing the sufficient wettability, is employed herein. However, in second measurement point 44 corresponding to a deep portion of the micro gap, the obtained contact angles are largely distributed depending upon the processing times. The measurement result obtained when the processing time is 30 seconds, that is, the longest processing time is barely close to the acceptable upper limit angle 20°.
According to this experimental result, in order to obtain the acceptable upper limit contact angle of 20° at the deep portion in the micro gap using the conventional process, about 30 seconds are required. On the contrary, a mixed gas containing oxygen gas and helium is used as a gas for plasma discharge, equal or higher surface modification effect can be obtained for 15 seconds of processing time. In other words, the time necessary for plasma processing reduces by half. Therefore, the productivity by a plasma processing step performed as a step prior to filling of resin can be considerably improved.
With reference to
Next, as shown in
Thereafter, circuit board 4 is taken out from chamber 1, and as shown in
The experimental result is described when the size of the micro gap is 100 μm. However, the method is effective when the size of the micro gap is 200 μm or less and the number of bumps existing in the micro gap is larger (100 bumps or more).
In a plasma processing method of the present invention, a large number of gas particles enter a micro gap subjected to plasma processing, and thus surface modification can be carried out efficiently. This method can be used for fabricating an electronic component module that is produced by filling a resin in a micro gap between a circuit board and an electronic component that is coupled with the circuit board via protruding electrodes.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2004-155836 | May 2004 | JP | national |
