Patent Application
20250151340
Embodiments generally relate to quantum sensing. More particularly, embodiments relate to predicting a remaining useful life of a semiconductor device utilizing quantum sensing.
The process of creating the mechanical die attachment between a power semiconductor device and substrate often causes thermally induced mechanical stress in the bond layer of the package. Such thermally induced mechanical stress is often worsened by the thermal cycling of the resultant package during normal operation.
Thermal cycling of the power electronics package further causes plastic work and strain to accumulate in a bond layer (e.g., solder, silver sinter, transient liquid-phase) material. Such operations impact the remaining useful life (RUL) or eventual failure of the power semiconductor device.
Various examples will be described below by referencing the following drawings, in which:
As described above, thermally induced mechanical stress impacts the remaining useful life (RUL) or eventual failure of the power semiconductor device. Often temperature sensors may be utilized to monitor temperature to approximate thermally induced mechanical stress.
As will be discussed in greater detail below, improved sensing can be achieved through the use of 2-D materials. Such 2-D materials may be utilized to sense more aspects than only temperature. For example, such 2-D materials can be utilized to sense magnetic, temperature, and strain fields. As an example, quantum sensing and imaging with spin defects in hexagonal boron nitride (hBN) can be utilized to sense magnetic, temperature, and strain fields.
Different from research describing the basic functionality of 2-D materials for strain sensing, the techniques described herein describe the application of a functionalized 2-D material such as hBN to a power semiconductor device in a power module package for the detection of plastic work and accumulated strain in the die attach bond line of the electronics package. Typically, such strain signals might be measured using a strain gauge or derived from a change in the temperature of the device over time. However, strain gauges in particular tend to be impractical for such microelectronics applications, and device temperature serves only as a proxy for the actual state field of interest (e.g., the strain). Thus, with the techniques described herein, the time variation of the measured signal as it directly relates to strain can be precisely measured in a highly sensitive fashion. This strain signal may then be used for prognostics in the prediction of the remaining useful life (RUL) of the power semiconductor device/electronics package.
As will be discussed in greater detail below, some systems, apparatuses, and methods described herein address predicting a remaining useful life of semiconductors utilizing quantum sensors. A 2-D material of the quantum sensor is excited via a microwave field source and a light source of a quantum sensor, where the quantum sensor is located adjacent a semiconductor device. The excitation of the 2-D material is sensed, via a photodetector of the quantum sensor. A magnetic field, a temperature, and/or a strain field effect of the semiconductor device are measured based on the sensed excitation of the layer of 2-D material. A remaining useful life of the semiconductor device is predicted based on one or more of the measured magnetic field, the measured temperature, or the measured strain field effect.
Thermal cycling of the power module 100 and power module 110 both result in thermal stress 120, chip shrinkage 122, and substrate shrinkage 124. In some instances, and depending on the package fabrication process, the built-in thermal stress 120 may be more significant in the power module 100 (e.g., having the direct bond copper (DBC) substrate 104) while the substrate shrinkage 124 may be more significant in the power module 110 (e.g., having the copper substrate 114).
As shown, the process of creating the mechanical die attachment between a power semiconductor device and substrate, and/or the thermal cycling of the resultant package during normal operation, causes built-in thermally induced mechanical stress in the bond layer of the package.
Thermal cycling of the power electronics package further causes plastic work and strain to accumulate in the bond layer (e.g., solder, silver sinter, transient liquid-phase) material over time.
The nonlinear deformation of the material in the bond line over time and the evolution of the bond line strain eventually leads to the initiation of cracks in the bond line typically at the corners or edges of the device. This crack initiation process can be further numerically predicted, and established or developed lifetime models may then be used to estimate the number of cycles to failure for the corner or edge regions of the device.
In some implementations, quantum sensors 202 comprising 2-D material layers are located in non-active areas 206 and/or active areas 208 of the semiconductor device 210. In some examples, semiconductor substrate 212 is composed of silicon, silicon carbide, the like, and/or combinations thereof.
In some implementations, a dielectric layer 214 is located between the semiconductor device 210 and a 2-D material 216 of the quantum sensors 202. As used herein the term “2-D material” refers to materials of crystalline solids (e.g., hexagonal boron nitride (hBN)) having a thickness of one to a few hundred atomic layers.
For example, the 2-D material 216 may be composed of hexagonal boron nitride functionalized with spin defects for strain sensing. In other implementations the 2-D material 216 may be composed of a nano-diamond material layer (e.g., for magnetic field detection). Such a hexagonal boron nitride 2-D material layer is deposited via tape transfer or chemical vapor deposition prior to passivation when the dielectric layer is silicon dioxide, for example. Similarly, such a hexagonal boron nitride 2-D material layer (hBN) is deposited via tape transfer or chemical vapor deposition as a final assembly step when the dielectric layer is aluminum oxide, for example.
Here, the integration of a 2-D material such as hBN may be positioned at select locations on a silicon or wide band-gap (WBG) power semiconductor device for the direct measurement of accumulated strain in the package. As shown below, relative to a power semiconductor device, the 2-D hBN material may be incorporated on to the power device in locations prone to failure (e.g., corners, edges, or hot spot regions of the chip). Here, the 2-D material may be placed on an electrically insulating landing pad (e.g., SiO2 or Al2O3) using either a tape transfer method or using a chemical vapor deposition (CVD) process.
For example, the plurality of quantum sensors 202 may be located at one or more corner regions 304 of the non-active area 206. Similarly, the plurality of quantum sensors 202 may be located at one or more wire bond free regions 306 (e.g., free of wire bonds 308) of the non-active area 206. Such wire bond free regions 306 may be selected based on hotspots of the semiconductor device 210.
Referring to
In the illustrated example, substrate 502 is a direct bond copper substrate, a copper substrate, a composite substrate (e.g., a metal matrix composite such as aluminum silicon carbide (AlSiC)), the like, and/or combinations thereof.
In some implementations, the quantum sensor 202 is located on the second side 506 of the substrate 502. For example, the quantum sensor 202 is located on the second side 506 of the substrate 502 with a dielectric layer positioned between the quantum sensor 202 and the semiconductor device 210.
In some examples, the quantum sensor 202 includes the layer of 2-D material 216. In the illustrated example, the quantum sensor further includes a microwave field source 512, a light source 514, and a photodetector 516. For example, the full quantum sensor 202 includes light source 514 for the 2-D material excitation, microwave field source 512 (e.g., an antenna) for 2-D material excitation, and photodetector 516 for collection of light from the 2-D material sample. As will be discussed in further detail below, the quantum sensor 202 is configured to measure a magnetic field, a temperature, and/or a strain field effect.
As will be described in greater detail below, a magnetic field source is also applied to the quantum sensor system 700. For example, the magnetic field source (e.g., magnetic B-field) may be applied using the inherent semiconductor device alternating current (AC) magnetic B-field. Additionally, or alternatively, a separate external AC magnetic field source may be applied. Additionally, or alternatively, a separate magnetic field source (not illustrated) may be incorporated into the quantum sensor system 700 (
It will be appreciated that in implementations including a temperature sensor, the temperature sensor would likewise be located on the second side 506 of the substrate 502.
In some implementations, the 2-D material 216 design is a single unitary patch 602. In some examples, wherein the design is an array of a plurality of patches 604. Alternatively, or additionally, wherein the design is a discontinuous patch 606 having a geometric pattern.
In some implementations, the microwave field source 512, the light source 514, and/or the photodetector 516 are incorporated into the electronics package 702 itself to be positioned above the 2-D material 216.
In some examples, the quantum sensor 202 further includes a plurality of light pipes 706 located between the light source 514 and the nano-layer of 2-D material 216 and/or located between the photodetector 516 and the 2-D material 216. The light pipes 706 are configured to channel light to/from the light source 514 and/or the photodetector 516.
As illustrated, the microwave field source 512, the light source 514, and/or the photodetector 516 may be integrated into the case of the power module package 702 with light pipe(s) 706 coupling the light source 514 and photodetector 516 to the nano-layer of 2-D material 216 regions of interest.
As illustrated, the microwave field source 512, the light source 514, and/or the photodetector 516 may be integrated into the electronics device 806 as a separate semiconductor device (e.g., a printed circuit board (PCB) or chip) that is positioned on top of the power device in the package 702.
In operation, the full quantum sensor system operates based on optically detected magnetic resonance (ODMR) principles. ODMR is a double resonance technique which combines optical measurements (e.g., fluorescence, phosphorescence, absorption) with electron spin resonance spectroscopy. Here, pure magnetic field (
Based on the above understanding illustrated in
Some further elements to consider include a characterization of the bond layer, which may be done post fabrication as a baseline with subsequent interrogation to then show the change (e.g., degradation) from baseline. In some examples, interrogation may occur at regular module maintenance cycles during module off condition (e.g., at vehicle check-ups at the dealer) to avoid in-use thermal/magnetic field effects. In such a case, a separate and controlled magnetic field (e.g., AC magnetic B-field) may be manually applied for ODMR sensing purposes. This magnetic B-field field source may be applied using an external source such as an electromagnet (e.g., Helmholtz coil), or this separately excitable magnetic field source may be further integrated into the quantum sensing system. Alternatively, interrogation of the package could be performed when the module is powered on during a specified power cycle condition using the inherent semiconductor device magnetic B-field. The ODMR data may be combined with machine learning techniques for predicting an eventual remaining useful life (RUL) or predicting failure of the chip. In some implementations, time series images from the photodetector (e.g., intensity/response shift images) can be processed remotely to detect fault and identify failure modes or distinct changes in response.
Illustrated processing block 1302 provides for exciting a layer of 2-D material of the quantum sensor. For example, a layer of 2-D material of the quantum sensor is excited, via a microwave field source, a magnetic field source and a light source of a quantum sensor. In some examples, the quantum sensor is located adjacent a semiconductor device.
As described above, the magnetic field source (e.g., magnetic B-field) may be applied using the inherent semiconductor device AC magnetic B-field. Additionally, or alternatively, a separate external AC magnetic field source may be applied. Additionally, or alternatively, a separate magnetic field source (not illustrated) may be incorporated into the quantum sensor system 700 (
Illustrated processing block 1304 provides for sensing the excitation of the layer of 2-D material. For example, the excitation of the layer of 2-D material is sensed, via a photodetector of the quantum sensor.
Illustrated processing block 1306 provides for measuring a magnetic field, a temperature, and/or a strain field effect. For example, one or more of a magnetic field, a temperature, or a strain field effect of the semiconductor device are measured based on the sensed excitation of the layer of 2-D material.
Illustrated processing block 1308 provides for predicting a remaining useful life. For example, a remaining useful life of the semiconductor device is predicted based on the measured magnetic field, the measured temperature, and/or the measured strain field effect and a subsequent processing of the data.
In some implementations, the method 1300 further includes channeling light from the light source and light to the photodetector. For example, light from the light source and light to the photodetector is channeled via a plurality of light pipes. The light pipes are located between the light source and the nano-layer of 2-D material and located between the photodetector and the nano-layer of 2-D material.
In some examples, the measuring is conducted using of an optically detected magnetic resonance measurement, a digital image correlation measurement, and/or a fluorescence magnitude measurement.
In some implementations, the measuring is conducted using a baseline measurement and a plurality of subsequent measurements.
In an example, the method 1300 may be implemented in computer readable instructions (e.g., software), configurable computer readable instructions (e.g., firmware), fixed-functionality computer readable instructions (e.g., hardware), etc., or any combination thereof.
In some examples, it will be appreciated that some or all of the operations in method 1300 may be performed at least in part by cloud processing.
It will be appreciated that some or all of the operations in method 1300 are described using a “pull” architecture (e.g., polling for new information followed by a corresponding response) may instead be implemented using a “push” architecture (e.g., sending such information when there is new information to report), and vice versa.
In some implementations, the processor 1502 may include a general purpose controller, a special purpose controller, a storage controller, a storage manager, a memory controller, a micro-controller, a general purpose processor, a special purpose processor, a central processor unit (CPU), the like, and/or combinations thereof.
Further, implementations may include distributed processing, component/object distributed processing, parallel processing, the like, and/or combinations thereof. For example, virtual computer system processing may implement one or more of the methods or functionalities as described herein, and the processor 1502 described herein may be used to support such virtual processing.
In some examples, the memory 1504 is an example of a computer-readable storage medium. For example, memory 1504 may be any memory which is accessible to the processor 1502, including, but not limited to RAM memory, registers, and register files, the like, and/or combinations thereof. References to “computer memory” or “memory” should be interpreted as possibly being multiple memories. The memory may for instance be multiple memories within the same computer system. The memory may also be multiple memories distributed amongst multiple computer systems or computing devices.
In an example, the vehicle 1700 includes an electronics package 1702 coupled to vehicle. Such an electronics package 1702 incorporates one or more aspects the quantum sensor system 200 (
In some implementations, computer readable instructions 1604 may include transistor array and/or other integrated circuit/IC components. For example, configurable firmware logic and/or fixed-functionality hardware logic implementations of the computer readable instructions 1604 may include configurable computer readable instructions such as, for example, programmable logic arrays (PLAs), field programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), or fixed-functionality computer readable instructions (e.g., hardware) using circuit technology such as, for example, application specific integrated circuit (ASIC), complementary metal oxide semiconductor (CMOS) or transistor-transistor logic (TTL) technology, the like, and/or combinations thereof.
All definitions, as defined and used herein, should be understood to control over dictionary definitions, definitions in documents incorporated by reference, and/or ordinary meanings of the defined terms.
Furthermore, for ease of understanding, certain functional blocks may have been delineated as separate blocks; however, these separately delineated blocks should not necessarily be construed as being in the order in which they are discussed or otherwise presented herein. For example, some blocks may be able to be performed in an alternative ordering, simultaneously, etc.
The terms “coupled,” “attached,” or “connected” may be used herein to refer to any type of relationship, direct or indirect, between the components in question, and may apply to electrical, mechanical, fluid, optical, electromagnetic, electro-mechanical or other connections. Additionally, the terms “first,” “second,” etc. are used herein only to facilitate discussion, and carry no particular temporal or chronological significance unless otherwise indicated. The terms “cause” or “causing” means to make, force, compel, direct, command, instruct, and/or enable an event or action to occur or at least be in a state where such event or action may occur, either in a direct or indirect manner.
Although a number of illustrative examples are described herein, it should be understood that numerous other modifications and examples can be devised by those skilled in the art that will fall within the spirit and scope of the principles of the foregoing disclosure. More particularly, reasonable variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the foregoing disclosure, the drawings and the appended claims without departing from the spirit of the foregoing disclosure. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art. The examples may be combined to form additional examples.
