This application claims benefit of priority to Korean Patent Applications Nos. 10-2023-0118607 filed on Sep. 6, 2023 and 10-2023-0192933 filed on Dec. 27, 2023 in the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in its entirety.
The present disclosure relates to a printed circuit board and a method of manufacturing the same.
In order to process data that has increased exponentially due to recent developments in artificial intelligence (AI) technology and the like, multi-chip packages including memory chips, such as a high bandwidth memory (HBM), and processor chips, such as a central processing unit (CPU), a graphics processing unit (GPU), an application specific integrated circuit (ASIC), and a field programmable gate array (FPGA), are being used. Accordingly, there is a demand for substrates with large-area structures, and efforts are continuing to overcome problems involving flatness and warpage control.
An aspect of the present disclosure may provide a printed circuit board including a glass layer and a method of manufacturing the same.
Another aspect of the present disclosure may provide a printed circuit board capable of preventing warpage with improved flatness and a method of manufacturing the same.
Another aspect of the present disclosure may provide a printed circuit board capable of improving reliability and a method of manufacturing the same.
According to an aspect of the present disclosure, a printed circuit board may include: a first insulating layer; a first wiring layer embedded in the first insulating layer on one side thereof; a glass layer disposed on the other side, opposite to the one side of the first insulating layer; a second wiring layer disposed on the glass layer; and a first via layer connecting the first wiring layer and the second wiring layer to each other, and including a first via portion penetrating the glass layer and a second via portion penetrating the first insulating layer. In a cross-sectional view of the printed circuit board, at least one of the first via portion and the second via portion may have a width becoming substantially narrower toward the first wiring layer.
According to another aspect of the present disclosure, a printed circuit board may include: an insulating layer; a first wiring layer disposed on one side of the insulating layer; a glass layer disposed on the other side, opposite to the one side of the insulating layer; a via layer including a first through-hole penetrating the insulating layer and exposing at least a portion of the first wiring layer, a second through-hole penetrating the glass layer and connected to the first through-hole, a portion of a first metal layer disposed on at least the partially exposed portion of the first wiring layer and a wall of each of the first and second through-holes, and a portion of a second metal layer disposed on the first metal layer and filling at least a portion of each of the first and second through-holes; and a second wiring layer disposed on the glass layer and connected to the via layer.
According to another aspect of the present disclosure, a method of manufacturing a printed circuit board may include: forming a first insulating layer embedding a first wiring layer; forming a glass layer on the first insulating layer; forming a first through-hole penetrating the glass layer; forming a second through-hole penetrating the first insulating layer and exposing at least a portion of the first wiring layer; forming a first via layer in the first through-hole and the second through-hole; and forming a second wiring layer connected to the first via layer on the first insulating layer.
According to another aspect of the present disclosure, a printed circuit board may include: a first insulating layer; a glass layer disposed on the first insulating layer; a plurality of wiring layers including first and second wring layers respectively attached to the first insulating layer and the glass layer; and a via layer connecting the first wiring layer and the second wiring layer to each other, and including a first via portion disposed in the glass layer and a second via portion extending from the first via portion and disposed in the first insulating layer. A surface roughness of one surface of the glass layer facing the first insulating layer may be smaller than a surface roughness of another surface of the glass layer opposing the one surface of the glass layer.
The above and other aspects, features, and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
Hereinafter, exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings.
Referring to
The chip-related components 1020 may include a memory chip such as a volatile memory (e.g., a dynamic random access memory (DRAM)), a non-volatile memory (e.g., a read only memory (ROM)), or a flash memory; an application processor chip such as a central processor (e.g., a central processing unit (CPU)), a graphics processor (e.g., a graphics processing unit (GPU)), a digital signal processor, a cryptographic processor, a microprocessor, or a microcontroller; and a logic chip such as an analog-digital converter or an application-specific integrated circuit (ASIC). The chip-related components 1020 are not limited thereto, but may also include other types of chip-related electronic components. In addition, these chip-related components 1020 may be combined with each other. The chip-related components 1020 may be in the form of a package including the chips or electronic components described above.
The network-related components 1030 may include protocols such as wireless fidelity (Wi-Fi) (Institute of Electrical and Electronics Engineers (IEEE) 802.11 family or the like), worldwide interoperability for microwave access (WiMAX) (IEEE 802.16 family or the like), IEEE 802.20, long term evolution (LTE), evolution data only (Ev-DO), high speed packet access+(HSPA+), high speed downlink packet access+(HSDPA+), high speed uplink packet access+(HSUPA+), global system for mobile communications (GSM), enhanced data GSM environment (EDGE), global positioning system (GPS), general packet radio service (GPRS), code division multiple access (CDMA), time division multiple access (TDMA), digital enhanced cordless telecommunications (DECT), Bluetooth, 3G, 4G, and 5G protocols, and any other wireless and wired protocols designated after the abovementioned protocols. However, the network-related components 1030 are not limited thereto, but may also include a variety of other wireless or wired standards or protocols. In addition, the network-related components 1030 may be combined with each other, together with the chip-related components 1020.
The other components 1040 may include a high frequency inductor, a ferrite inductor, a power inductor, ferrite beads, a low temperature co-fired ceramic (LTCC), an electromagnetic interference (EMI) filter, a multi-layer ceramic capacitor (MLCC), and the like. However, the other components 1040 are not limited thereto, but may also include passive elements in chip component type used for various other purposes, and the like. In addition, the other components 1040 may be combined with each other, together with the chip-related components 1020 and/or the network-related components 1030.
Depending on the type of electronic device 1000, the electronic device 1000 may include other electronic components that may or may not be physically and/or electrically connected to the mainboard 1010. Examples of the other electronic components may include a camera 1050, an antenna 1060, a display 1070, a battery 1080, and the like. The other electronic components are not limited thereto, but may be an audio codec, a video codec, a power amplifier, a compass, an accelerometer, a gyroscope, a speaker, a mass storage unit (e.g., a hard disk drive), a compact disk (CD), a digital versatile disk (DVD), and the like. The other electronic components may also include other electronic components and the like used for various purposes depending on the type of electronic device 1000.
The electronic device 1000 may be a smartphone, a personal digital assistant (PDA), a digital video camera, a digital still camera, a network system, a computer, a monitor, a tablet PC, a laptop PC, a netbook PC, a television, a video game machine, a smartwatch, an automotive component, or the like. However, the electronic device 1000 is not limited thereto, but may be any other electronic device processing data.
Referring to
Referring to
In the printed circuit board according to the first exemplary embodiment, the first insulating layer 111 and the glass layer 110 may be included between the first wiring layer 121 and the second wiring layer 122. That is, the insulating structure between the first wiring layer 121 and the second wiring layer 122 in the printed circuit board according to the first exemplary embodiment is not constituted by a single layer or an organic insulating layer alone, and the glass layer 110 may be included therein. As the glass layer 110 is included in the insulating structure between the first wiring layer 121 and the second wiring layer 122, the printed circuit board can be excellent in flatness, and can be resistant to warpage during the manufacturing stage.
The printed circuit board according to the first exemplary embodiment may not use the glass layer 110 as a core, but may include the glass layer 110 and the first insulating layer 111 as build-up layers. Therefore, based on
The first insulating layer 111 may include an organic insulating material. The organic insulating material may include a thermosetting resin such as an epoxy resin, a thermoplastic resin such as a polyimide, or a material containing an inorganic filler, an organic filler, and/or a glass fiber, a glass cloth or a glass fabric together with the resin. For example, the insulating material may be a non-photosensitive insulating material such as Ajinomoto build-up film (ABF) or prepreg (PPG), but is not limited thereto, and another type of polymer material may be used as an insulating material. Alternatively, the insulating material may be a photosensitive insulating material such as photoimageable dielectric (PID). In addition, the insulating material may include an adhesive sheet such as a bonding sheet (BS). Specifically, the first insulating layer 111 may preferably include an Ajinomoto build-up film (ABF), but is not limited thereto, and may include another organic insulating material. Meanwhile, the first insulating layer 111 is illustrated as one insulating layer in
The first wiring layer 121 may be embedded on one side of the first insulating layer 111. That is, the first wiring layer 121 may be disposed on one side of the first insulating layer 111, so that one surface of the first wiring layer 121 is exposed from one surface of the first insulating layer 111. At this point, the exposure of one surface of the first wiring layer 121 from one surface of the first insulating layer 111 means that one surface of the first wiring layer 121 is not covered by the first insulating layer 111. Even if one surface of the first wiring layer 121 is covered by another component further included under the first insulating layer 111, this may be understood to have the same meaning as described above. That is, this may be meant that one surface of the first wiring layer 121 is not covered by the first insulating layer 111, and the other surface opposite to one surface of the first wiring layer 121 and the side surface of the first wiring layer 121 are covered by the first insulating layer 111. At this time, unless another adhesive means is additionally included between the first wiring layer 121 and the first insulating layer 111, the other surface and the side surface of the first wiring layer 121 may be in contact with the first insulating layer 111.
The first wiring layer 121 may include metal. The metal may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), and/or alloys thereof. The first wiring layer 121 may preferably include copper (Cu), but is not limited thereto.
The first wiring layer 121 may perform various functions each depending on design. For example, the first wiring layer 121 may include a signal pattern, a power pattern, a ground pattern, or the like. Each of these patterns may have various forms such as lines, planes, and pads. The first wiring layer 121 may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper). Alternatively, the first wiring layer 121 may include a metal foil (or a copper foil) and an electrolytic plating layer (or electric copper). Alternatively, the first wiring layer 121 may include a metal foil (or a copper foil), an electroless plating layer (or chemical copper), and an electrolytic plating layer (or electric copper). The first wiring layer 121 may include a sputtering layer instead of the electroless plating layer (or chemical copper), or the first wiring layer 121 may include both a sputtering layer and an electroless plating layer (or chemical copper) if necessary.
The first wiring layer 121 may be formed using any one technique among a semiadditive process (SAP), a modified semiadditive process (MSAP), a tenting (TT) process, and a subtractive process, but is not limited thereto. Any technique may be used without limitation if the technique is capable of configuring a circuit on a printed circuit board. In addition, the first wiring layer 121 may be formed using a different technique depending on the purpose of use and the design.
The glass layer 110 may include glass, which is an amorphous solid. For example, the glass may include pure silicon dioxide (about 100% SiO2), soda lime glass, borosilicate glass, alumino-silicate glass, or the like. However, the glass layer 110 is not limited thereto, and an alternative glass material such as fluorine glass, phosphate glass, or chalcogen glass may also be used as a material for the glass layer 110. In addition, the glass layer 110 may further include other additives to form glass with particular physical properties. These additives may include not only calcium carbonate (e.g., lime) and sodium carbonate (e.g., soda), but also magnesium, calcium, manganese, aluminum, lead, boron, iron, chromium, potassium, sulfur, antimony, and carbonates and/or oxides of these elements and other elements. The glass layer 110 is a layer that is distinguished from the material containing a glass fiber, a glass cloth, a glass fabric, or the like, such as copper clad laminate (CCL) or prepreg (PPG), and may be understood as, for example, a plate glass or a glass sheet.
The printed circuit board according to the first exemplary embodiment, which includes the glass layer 110, can be basically excellent in flatness, and can also be advantageous in controlling warpage through a low coefficient of thermal expansion (CTE) or the like. In particular, since the printed circuit board according to the first exemplary embodiment may have the glass layer 110 as a part of a build-up layer, this may be more advantageous in controlling warpage even in a subsequent step of stacking another insulating layer. That is, even if other insulating layers are sequentially stacked on the glass layer 110, the flatness can be further increased, which is more advantageous in forming a high-density fine circuit with a fine pitch. In particular, unlike a case in which the glass layer 110 is used as a core layer, the glass layer 110 may be included in a coreless type substrate, which is advantageous in controlling a warpage characteristic that is a problem of the coreless type substrate. In addition, the glass layer 110 used in the core-type substrate is also capable of controlling a warpage characteristic, thereby increasing reliability, for example, achieving an asymmetric substrate.
In addition, the glass layer 110 can reduce the number of layers in the printed circuit board and further increase the degree of design freedom through the feature of glass having variable dielectric properties, such as Dk of 2.5 to 11.
The second wiring layer 122 may be included on the glass layer 110. The second wiring layer 122 may include metal. The metal may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), and/or alloys thereof. The second wiring layer 122 may preferably include copper (Cu), but is not limited thereto.
The second wiring layer 122 may perform various functions each depending on design. For example, the second wiring layer 122 may include a signal pattern, a power pattern, a ground pattern, or the like. Each of these patterns may have various forms such as lines, planes, and pads. The second wiring layer 122 may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper). Alternatively, the second wiring layer 122 may include a metal foil (or a copper foil) and an electrolytic plating layer (or electric copper). Alternatively, the second wiring layer 122 may include a metal foil (or a copper foil), an electroless plating layer (or chemical copper), and an electrolytic plating layer (or electric copper). The second wiring layer 122 may include a sputtering layer instead of the electroless plating layer (or chemical copper), or the second wiring layer 122 may include both a sputtering layer and an electroless plating layer (or chemical copper) if necessary.
The second wiring layer 122 may be formed by any one technique among a semiadditive process (SAP), a modified semiadditive process (MSAP), a tenting (TT) process, and a subtractive process, but is not limited thereto. Any technique may be used without limitation if the technique is capable of configuring a circuit on a printed circuit board. In addition, the second wiring layer 122 may be formed using a different method depending on the purpose of use and the design. Meanwhile, the second wiring layer 122 may be formed at the same time as the first via layer 130, but is not limited thereto.
The first via layer 130 may connect the first wiring layer 121 and the second wiring layer 122 to each other, and penetrate at least a portion of each of the first insulating layer 111 and the glass layer 110. The first via layer 130 may include a first via portion 131 penetrating the first insulating layer 111 and a second via portion 132 penetrating the glass layer 110. That is, the first via layer 130 may be formed to fill a through-hole penetrating the first insulating layer 111 and a through-hole penetrating the glass layer 110, and the first via portion 131 penetrating the first insulating layer 111 and the second via portion 132 penetrating the glass layer 110 may be integrally formed.
The first via layer 130 may include a metal. The metal may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), and/or alloys thereof. The first via layer 130 may preferably include copper (Cu), but is not limited thereto. The first via layer 130 may include a filled via that fills a via hole, but may also include a conformal via disposed along a wall of a via hole. The first via layer 130 may perform various functions each depending on design. For example, the first via layer 130 may include a ground via, a power via, a signal via, or the like.
The first via layer 130 may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper). The first via layer 130 may include a sputtering layer instead of the electroless plating layer (or chemical copper), or the first via layer 130 may include both a sputtering layer and an electroless plating layer (or chemical copper) if necessary. More specifically, the first via layer 130 may include a seed layer 125 and a plating layer 126 disposed on the seed layer 125.
The seed layer 125 may include an electroless plating layer (or chemical copper), but is not limited thereto, and the seed layer 125 may include may also include a sputtering layer. The seed layer 125 may include copper (Cu), but is not limited to what is illustrated in
The seed layer 125 may be conformally disposed along an inner wall of a first through-hole formed in the glass layer 110 and an inner wall of a second through-hole formed in the first insulating layer 111. That is, the seed layer 125 may contact the glass layer 110 and the first insulating layer 111, and may also contact the first wiring layer 121. The seed layer 125 may be disposed on the boundary with the glass layer 110 and extend to the border with the first insulating layer 111 and the border with the first wiring layer 121. In addition, the seed layer 125 may extend upward of the glass layer 110 and may function as a seed layer for the second wiring layer 122.
The plating layer 126 may include an electrolytic plating layer (or electric copper), and may be formed by performing electrolytic plating using the seed layer 125 as a plating lead-in wire. The plating layer 126 may include copper (Cu), but is not limited thereto, and may include the same metal as the first via layer 130. The plating layer 126 may be disposed on the seed layer 125, and may fill the first through-hole penetrating the glass layer 110 and the second through-hole penetrating the first insulating layer 111.
Meanwhile, the forming of the seed layer 125 and the forming of the plating layer 126 may be performed at once, the first via portion 131 and the second via portion 132 of the first via layer 130 may be integrally formed. This means that the boundary between the first via portion 131 and the second via portion 132 of the first via layer 130 may not be confirmed, and the seed layer 125 formed in the first via portion 131 may extend to the second via portion 132, and the plating layer 126 formed in the first via portion 131 may extend to the second via portion 132. Also, the boundary between the plating layer 126 and the seed layer 125 may be confirmed. That is, the integral formation of the first via portion 131 and the second via portion 132 of the first via layer 130 is in contrast to the combination of the first via portion 131 penetrating the glass layer 110 and the second via portion 132 penetrating the first insulating layer 111 after they are formed separately, and means that the first via layer 130 may be formed as one body through a series of processes. At this time, the first via layer 130 and the second wiring layer 122 may be integrally formed. This may be a result of forming the second wiring layer 122 in the forming of the first via layer 130.
The first via portion 131 penetrating the glass layer 110 and the second via portion 132 penetrating the first insulating layer 111 may have different widths. In addition, each of the first via portion 131 and the second via portion 132 may have a width becoming narrower toward the first wiring layer 121 to have a so-called tapered shape.
The widths and shapes of the first via portion 131 and the second via portion 132 of the first via layer 130 may be measured and confirmed by imaging a cross section of the printed circuit board passing cut in the stacking direction through the central axis of the first via layer 130 using a scanning microscope or the like.
At the interface between the first insulating layer 111 and the glass layer 110, the second via portion 132 may have a smaller width than the first via portion 131. The interface between the first insulating layer 111 and the glass layer 110 may be confirmed as a boundary between the first insulating layer 111 and the glass layer 110 in the cross-sectional view, and the widths of the second via portion 132 and the first via portion 131 located on a line extending from this boundary line may be compared. That is, referring to
At the interface between the glass layer 110 and the second wiring layer 122, the first via portion 131 may have a smaller width than the second wiring layer 122. This means that when the first via layer 130 and the second wiring layer 122 are formed, the second wiring layer 122 may be formed to have a larger width than the first via layer 130 to function as a land of the first via layer 130. Meanwhile, the width of the first via portion 131 of the first via layer 130 is not smaller than widths of all wires in the second wiring layer 122, and the width of the second wiring layer 122, which is directly connected to the first via layer 130, may be larger than the width of the first via portion 131 of the first via layer 130.
In the cross-sectional view, the first via portion 131 may have a width becoming narrower toward the first wiring layer 121, and the second via portion 132 may have a width becoming narrower toward the first wiring layer 121. The first via portion 131 and the second via portion 132 may have widths that become narrower in substantially the same direction. This is a result of forming the first through-hole penetrating the glass layer 110 and then forming the second through-hole penetrating the first insulating layer 111 in the same direction, after forming the glass layer 110 on the first insulating layer 111. Since the through-holes are formed from the upper side to the lower side based on
Meanwhile, it is illustrated in
A surface roughness of the glass layer 110 at the interface between the first insulating layer 111 and the glass layer 110 may be smaller than a surface roughness of the glass layer 110 at the interface between the first via layer 130 and the glass layer 110, and may be smaller than a surface roughness of the glass layer 110 at the interface between the second wiring layer 122 and the glass layer 110. That is, referring to
The surface roughness of the glass layer 110 may be measured by imaging a cross section of the printed circuit board cut in the stacking direction using a scanning microscope or the like. In order to measure a surface roughness on a cut surface of the glass layer 110, a known surface roughness measurement method such as a center line average calculation method (Ra) or a ten-point average calculation method (Rz) may be considered. However, the surface roughness measurement method is not limited thereto, and any method may be used without limitation as long as the method is capable of measuring a surface roughness. As a non-limiting example, a surface roughness may be measured by marking a mean position of a lower surface of the first wiring layer 121 as an imaginary line, and then obtaining an average of absolute values of height differences with respect to the mean line, or obtaining average of height differences between the five highest points and the five lowest points with respect to the mean line. Meanwhile, the surface roughness measurement method is not limited thereto, but the size comparison will be clearer only if the comparative surfaces of the glass layer 110 are measured using the same method. As a non-limiting example, the lower surface of the glass layer 110 may have a roughness (Ra) value of about 0.1 nm to 0.2 nm, and the upper surface and/or the inner side surface of the glass layer 110 may have a roughness (Ra) value of about 0.4 nm to 0.6 nm. Alternatively, the lower surface of the glass layer 110 may have a roughness (Rz) value of about 1 nm to 3 nm, and the upper surface and/or the inner side surface of the glass layer 110 may have a roughness (Rz) value of about 4 nm to 7 nm.
In the first via layer 130, the first via portion 131 may be deeper than the second via portion 132. That is, the first via portion 131 penetrating the glass layer 110 may be deeper than the second via portion 132 penetrating the first insulating layer 111. This may mean that an insulation distance of the glass layer 110 is larger than an insulation distance of the first insulating layer 111, and may mean that, referring to
The depths of the first via portion 131 and the second via portion 132 may be measured by imaging a cross section of the printed circuit board cut in the stacking direction using a scanning microscope or the like. Each of the depths of the first via portion 131 and the second via portion 132 of the first via layer 130 may refer to a vertical distance between the upper and lower surfaces of each of the first via portion 131 and the second via portion 132 of the first via layer 130 in the cross-sectional view. However, the boundary between the first via portion 131 and the second via portion 132 may not be clear because they are integrally formed, and thus, the depth of the first via portion 131 may be understood as a vertical distance between the upper and lower surfaces of the glass layer 110, and the depth of the second via portion 132 may be understood as a vertical distance from the upper surface of the first wiring layer 121 to the upper surface of the first insulating layer 111. That is, among insulation distances between the first wiring layer 121 and the second wiring layer 122, an insulation distance corresponding to the area of the glass layer 110 may be understood as a depth of the first via portion 131, and an insulation distance corresponding to the area of the first insulating layer 111 may be understood as a depth of the second via portion 132.
Referring to
At this time, the first wiring layer 121 may be disposed on an insulating material 100. The insulating material 100 may be an arbitrary component, and the insulating material 100 may be a carrier substrate, a core layer, a build-up insulating layer, or even another glass layer. In a case in which the insulating material 100 is a carrier substrate, the first wiring layer 121 may be located on the outermost side of the coreless structure. In a case in which the insulating material 100 is a core layer, the first wiring layer 121 may be located on the core-type substrate. In a case in which the insulating material 100 is a build-up insulating layer, the first wiring layer 121 may be located in the middle of the build-up of the substrate to have an interlayer structure. In a case in which the insulating material 100 is a glass layer, the same interlayer structure may be repeatedly laminated. That is, in the printed circuit board according to the first exemplary embodiment, the insulating material 100 is expressed as an arbitrary component to express only a portion where the interlayer structure is formed between the first wiring layer 121 and the second wiring layer 122. This means that interlayer structures may be applied in various ways to printed circuit boards according to first to fifth application examples. Meanwhile, the insulating material 100 is not necessarily constituted by only one insulating material, and may have various structures as described above.
Thereafter, the method of manufacturing a printed circuit board may include forming a first insulating layer 111 to embed the first wiring layer 121.
The first insulating layer 111 may be disposed on the insulating material 100 to embed the first wiring layer 121 disposed on the insulating material 100. As a method of forming the first insulating layer 111, a known insulating layer stacking method may be used, and one of various methods may be used depending on the insulating material of the first insulating layer 111. At this time, the first insulating layer 111 may further include a temporary layer such as a protective layer. In a case in which the first insulating layer 111 further includes a temporary layer, the temporary layer may be removed before a glass layer 110 is formed, so the first insulating layer 111 is formed as illustrated in
Thereafter, the method of manufacturing a printed circuit board may include forming a glass layer 110 on the first insulating layer 111.
By curing the first insulating layer 111 after forming the glass layer 110 on the first insulating layer 111 before the first insulating layer 111 is cured or in a semi-cured state of the first insulating layer 111, the glass layer 110 may be formed on the first insulating layer 111. After the first insulating layer 111 is formed with a temporary layer included therein, if the temporary layer is removed immediately before the glass layer 110 is formed, the glass layer 110 may be attached to the first insulating layer 111 using the adhesive force of the first insulating layer 111. However, the formation of the glass layer 110 on the first insulating layer 111 is not necessarily limited thereto, and the glass layer 110 may be formed after forming an adhesive means on the first insulating layer 111.
Referring to
The forming of the first through-hole Hl penetrating the glass layer 110 may include forming a first hole hl by removing portions of the glass layer 110 and the first insulating layer 111. The first hole hl may be formed using a mechanical processing method. As a non-limiting example, the first hole h1 may be formed by emitting a UV laser. At this time, the UV laser processing may be performed one time, but may also be performed multiple times.
The first hole h1 may be formed to penetrate the glass layer 110, and a portion of the first insulating layer 111 may be processed together in the penetrating of the glass layer 110. That is, the forming of the first hole h1 is performed as a step of penetrating the glass layer 110, and at this time, a portion of the first insulating layer 111 is removed together, so that the first hole h1 may penetrate at least a portion of the first insulating layer 111. It is illustrated in
Thereafter, a first through-hole H1 may be formed by removing at least a portion of the glass layer 110. The forming of the first through-hole H1 by removing at least a portion of the glass layer 110 may be performed through an etching process. As a non-limiting example, wet etching may be used in the etching process. The removing of at least a portion of the glass layer 110 may be performed by expanding the first hole h1 formed in the glass layer 110 to form the first through-hole H1. That is, the first through-hole H1 can be formed by removing a portion of the glass layer 110 adjacent to the first hole h1. However, the first insulating layer 111 may not be removed in the removing of the glass layer 110, and thus, an area of the first hole h1 formed in the first insulating layer 111 may not be expanded. In the forming of the first through-hole H1, a portion of the upper surface of the first insulating layer 111 may be exposed.
At this time, in a case in which the process is performed by wet etching, a portion of the glass layer 110 may be removed on the upper side thereof, and accordingly, the thickness of the glass layer 110 may be reduced. As a non-limiting example, in a case in which the portion of the glass layer 110 is removed on the upper side thereof, a reduced thickness of the glass layer 110 may correspond to half the diameter of the first through-hole H1. That is, a difference between the thickness of the glass layer 110 before forming the first through-hole H1 and the thickness of the glass layer 110 after forming the first through-hole may correspond to half the width of the first through-hole H1 on the upper side thereof. In the removing of at least a portion of the glass layer 110, surface roughness may occur on an upper surface of the glass layer 110 and an inner side surface of the glass layer 110 constituting a wall surface of the first through-hole H1.
Meanwhile, it is illustrated in
Meanwhile, it is illustrated in
Thereafter, a second through-hole H2 penetrating at least a portion of the first insulating layer 111 may be formed. As a method of forming the second through-hole H2, a known method for penetrating the first insulating layer 111 may be used. As a non-limiting example, processing may be performed using a UV laser, a CO2 laser, or a YAG laser. As the second through-hole H2 is formed, at least a portion of the first wiring layer 121 may be exposed. The second through-hole H2 may be formed to have a larger width than the first hole h1, and thus, the first hole h1 may be included in the second through-hole H2. Meanwhile, after the forming of the second through-hole H2, surface treatment may be performed on the inner side surface of the first insulating layer 111, which forms an inner wall of the second through-hole H2, and a portion of the upper surface of the first insulating layer 111, which forms a bottom surface of the first through-hole H1. The surface treatment may be performed through a desmearing process for removing residues generated in the first insulating layer 111, and additionally, preprocessing for forming the first via layer 130 may be performed.
Referring to
The forming of the first via layer 130 and the forming of the second wiring layer 122 may include forming a seed layer 125. The seed layer 125 may be formed along the inner walls and the bottom surfaces of the first through-hole H1 and the second through-hole H2, and may extend onto the glass layer 110. That is, the seed layer 125 may be formed conformally along the glass layer, the first through-hole H1, and the second through-hole H2. As a method of forming the seed layer 125, a deposition technique such as sputtering may be used, but the method of forming the seed layer 125 is not limited thereto. Since the seed layer 125 extends onto the glass layer 110, in a case in which the sputtering technique is used, adhesion between the seed layer 125 and the glass layer 110 can be more secured, which may be more advantageous in the subsequent plating step. However, the method of forming the seed layer 125 is not limited thereto, and the seed layer 125 may be formed by an electroless plating (or chemical copper) process. In addition, one of various methods may be used depending on the material of the seed layer 125, and the seed layer 125 may be formed using a known method. Thereafter, a plating layer 126 may be formed on the seed layer 125 to form a first via layer 130 and a second wiring layer 122. The forming of the plating layer 126 may be performed by electroplating using the seed layer 125 as a plating lead-in wire. The plating layer 126 may be formed to fill the first through-hole H1 and the second through-hole H2, and the plating layer 126 may form a first via portion 131 and a second via portion 132 of the first via layer 130 together with the seed layer 125 located in the first through-hole H1 and the second through-hole H2, respectively. At this time, since the plating layer 126 is formed by performing plating once to simultaneously fill the second through-hole H2 and the first through-hole H1, the first via portion 131 and the second via portion 132 can be formed in the same step. This is different from the structure in which after a via is formed in the glass layer 110 and a via is formed in the first insulating layer 111, the glass layer 110 and the first insulating layer 111 are coupled to each other by bonding, in that the first via portion 131 penetrating the glass layer 110 and the second via portion 132 penetrating the first insulating layer 111 are integrally formed while the boundary between the first via portion 131 and the second via portion 132 are not unclear. Since the first via portion 131 and the second via portion 132 are integrally formed, it is possible to prevent problems such as separation or misalignment between the first via portion 131 and the second via portion 132.
Meanwhile, the second wiring layer 122 may be formed by forming a plating resist on the seed layer 125, performing plating, removing the plating resist, and then removing a portion of the seed layer 125. However, the formation of the second wiring layer is not necessarily limited thereto, and the second wiring layer 122 may be patterned using a known method, for example, by forming the plating layer 126 on the seed layer 125 and then removing a portion of the plating layer 126 and a portion of the seed layer 125.
In
method of manufacturing a printed circuit board according to the first exemplary embodiment, and various shapes of the first via layer 130 and manufacturing methods therefor will be mainly described below. In each of
Referring to
The reason why the inner wall of the first through-hole H1 has a curved surface while the first through-hole H1 has a width becoming substantially narrower is that the portion of the glass layer 110 is removed by etching in the forming of the first through-hole H1. That is, in the forming of the first through-hole H1, a curved surface may occur in a lower area where an etchant is concentrated of the first through-hole H1. However, the formation of the first through-hole H1 is not necessarily limited thereto. In a case in which the etchant is more concentrated on the lower side in the forming of the first through-hole H1, the glass layer 110 may be removed to be wider at the center portion rather than the upper and lower portions of the first through-hole H1. However, even in this case, the first insulating layer 111 may not react to the etchant that removes the glass layer 110, and thus, the first hole h1 formed in the first insulating layer 111 may be maintained in the forming of the first through-hole H1.
Hereafter, in the method of manufacturing a printed circuit board according to the first modification of the first exemplary embodiment, a width of the second through-hole H2 on the upper side thereof may be substantially the same as a width of the first through-hole H1 on the lower side thereof. This is because, in the forming of the second through-hole H2 by removing at least a portion of the first insulating layer 111, the glass layer 110 may function as a mask for the second through-hole H2. That is, the second through-hole H2 may be formed by removing the first insulating layer 111 forming a bottom surface of the first through-hole H1, and as a result, the width of the second through-hole H2 on the upper side thereof may be substantially the same as the width of the first through-hole H1 on the lower side thereof. In this case as well, the second through-hole H2 may be formed using a UV laser, a CO2 laser, a YAG laser, or the like, and accordingly, the second through-hole H2 may have a tapered shape with a substantially constant amount of change.
In the printed circuit board according to the first modification of the first exemplary embodiment, the side surface of the first via portion 131 may be substantially curved. This may be a result depending on the shape of the first through-hole H1 as described above. In addition, at the interface between the glass layer 110 and the first insulating layer 111, a width of the first via portion 131 may be substantially the same as a width of the second via portion 132. This may be a result depending on the shape of the second through-hole H2. In the printed circuit board according to the first modification of the first exemplary embodiment, since the first via portion 131 of the first via layer 130 may have a substantially curved surface, it is possible to increase a contact area between the glass layer 110 and the first via portion 131, which is more advantageous in improving adhesion. Meanwhile, the shapes of the first via portion 131 and the second via portion 132 are not limited to what are illustrated in
Referring to
In the printed circuit board according to the second modification of the first exemplary embodiment, at the boundary between the glass layer 110 and the first insulating layer 111, the width of the first via portion 131 and the width of the second via portion 132 may be substantially the same. This may be a result of forming the second through-hole H2 as described above. At this time, in a case in which the first via portion 131 and the second via portion 132 are formed to have substantially the same slope as illustrated in
Referring to
In the printed circuit board according to the third modification of the first exemplary embodiment, at the boundary between the glass layer 110 and the first insulating layer 111, the width of the first via portion 131 may be substantially the same as the width of the second via portion 132, and the inclination angle formed by the side surface of the first via portion 131 and the first insulating layer 111 may be substantially different from the inclination angle formed by the side surface of the second via portion 132 and the first wiring layer 121. More preferably, each of the inclination angle formed by the side surface of the first via portion 131 and the upper surface of the first insulating layer 111 and the inclination angle formed by the side surface of the second via portion 132 and the upper surface of the first wiring layer 121 may be an acute angle, and the inclination angle formed by the side surface of the second via portion 132 and the upper surface of the first wiring layer 121 may be smaller than the inclination angle formed by the side surface of the first via portion 131 and the upper surface of the first insulating layer 111. This may be a result depending on the shape of the first through-hole H1 formed in the glass layer 110 and the shape of the second through-hole H2 formed in the first insulating layer 111. At this time, the inclination angle formed by the two intersecting surfaces may be measured by imaging a cross section of the printed circuit board cut in the stacking direction using a scanning microscope, and may be measured using an angle formed by the actual slope of the via portion and the first insulating layer 111 or the first wiring layer 121 in each of the five arbitrary areas. Meanwhile, any known method for measuring an inclination angle formed by two actual intersecting surfaces, rather than measuring an inclination angle only at one point with respect to an uneven slope, may be used without limitation. Meanwhile, the comparison between inclination angles is not necessarily limited to comparison based on measurements, and may be understood to mean that the second via portion 132 penetrating the first insulating layer 111 has a shape that is substantially closer to the vertical than the first via portion 131 penetrating the glass layer 110.
Referring to
In the printed circuit board according to the fourth modification of the first exemplary embodiment, the first via layer 130 may include a groove portion disposed on the lower side of the first via portion 131 and embedded in at least a portion of the first insulating layer 111. The groove portion may be a result of forming the first via layer 130 in an area that remains non-included in the first through-hole H1 and the second through-hole H2 among the plurality of first holes h1. At this time, the seed layer 125 may be conformally disposed along the border of the first hole h1, and the groove portion may be formed by filling the first hole h1 with the plating layer 126 on the seed layer 125. Since the first hole h1 may penetrate only a portion of the first insulating layer 111, rather than entirely penetrating the first insulating layer 111, the groove portion may not be in contact with the first wiring layer 121, and may be disposed to be spaced apart from the second via portion 132 of the first via layer 130 along the perimeter of the second via portion 132. Since the first via layer 130 includes a groove portion, it is possible to increase a contact area between the first via layer 130 and the first insulating layer 111, which is advantageous in securing adhesion.
Referring to
In the printed circuit board according to the fifth modification of the first exemplary embodiment, the first via portion 131 of the first via layer 130 may be substantially perpendicular to the upper surface of the first insulating layer 111, and may be substantially perpendicular to the upper and lower surfaces of the glass layer 110. In addition, the first via portion 131 of the first via layer 130 may be substantially perpendicular to the second wiring layer 122. This may be a result of forming the first via layer 130 after forming the first through-hole H1 so that the first through-hole H1 is substantially perpendicular to the upper surface of the first insulating layer 111 and the upper and lower surfaces of the glass layer 110. At this time, the side surface of the first via layer 130 does not need to form an angle with the upper and lower surfaces of the glass layer 110, and may be curved as described above.
Referring to
In the printed circuit board according to the sixth modification of the first exemplary embodiment, the first via layer 130 may have a recess portion. The recess portion may be disposed on the lower side of the first via portion 131, and may have a step from the upper surface of the first insulating layer 111. The recess portion may be an area corresponding to the first hole h1. Since the first via layer 130 may have a recess portion, it is possible to increase a contact area between the first via layer 130 and the first insulating layer 111, which is advantageous in securing adhesion.
Referring to FIG. 5G, in the method of manufacturing a printed circuit board according to the seventh modification of the first exemplary embodiment, in the forming of the first hole h1, the upper side of the first wiring layer 121 may be exposed by forming the first hole h1 to penetrate the first insulating layer 111. This may be a result of forming the first hole h1 to have a larger area by overlapping lasers or performing processing for forming the first hole h1 for a longer period of time in the forming of the first hole h1. Since the upper side of the first wiring layer 121 is exposed through the first hole h1, the forming of the second through-hole penetrating the first insulating layer 111 can be omitted, thereby reducing one step of the process. At this time, the first hole h1 may be substantially perpendicular to the upper surface of the first insulating layer 111, and may be substantially perpendicular to the first wiring layer 121.
In the printed circuit board according to the seventh modification of the first exemplary embodiment, the second via portion 132 of the first via layer 130 may be substantially perpendicular to the upper surface of the first insulating layer 111, and may be substantially perpendicular to the first wiring layer 121. This may be a result depending on the shape of the first hole h1 in the forming of the first hole h1, and may be a result of omitting the forming of the second through-hole H2.
Referring to
In the printed circuit board according to the eighth modification of the first exemplary embodiment, a width of the second via portion 132 may be larger than a width of the first via portion 131 at the interface between the first insulating layer 111 and the glass layer 110. This results from the shapes of the first through-hole H1 and the second through-hole H2. Since the second via portion 132 penetrating the first insulating layer 111 may be wider than the first via portion 131, the first via layer 130 may have an anchoring effect, and the first via layer 130 may have more improved adhesion.
Referring to
In the printed circuit board according to the ninth modification of the first exemplary embodiment, at least one via in the first via layer 130 may include one second via portion 132 and a plurality of first via portions 131, and the plurality of first via portions 131 may be in contact with one second via portion 132 for connection. That is, a plurality of first via portions 131 may be formed to penetrate the glass layer 110, and one second via portion 132 may be formed to penetrate the first insulating layer 111 and connected to the first wiring layer 121. The first via layer 130 may also have a groove portion. The groove portion may have a shape depending on the first hole h1, may be disposed on the lower side of the first via portion 131, and may refer to a portion of the first via layer 130 embedded in the first insulating layer 111. The groove portion may be an area spaced apart from the second via portion. Each of the plurality of first via portions 131 may have a width becoming narrower toward the first wiring layer 121. This may be a result of performing processing from the upper side to the lower side based on
Referring to
In the printed circuit board according to the tenth modification of the first exemplary embodiment, one second via portion 132 of the first via layer 130 may be connected to the plurality of first via portions 131, and the first via layer 130 may not have a groove portion. This may be a shape depending on the relationship between the first holes h1, the first through-holes H1, and the second through-hole H2. Since the width of the second via portion 132 may be sufficiently secured, sufficient adhesion and connection reliability can be secured between the first via portions 131 and the second via portion 132.
A plurality of first holes h1 spaced apart from each other may be formed in the glass layer 110, and a plurality of first through-holes H1 may be formed based on the plurality of first holes h1. Thereafter, the plurality of first through-holes H1 may be filled by forming a first via layer 130. In this case, since the upper side of the glass layer 110 does not change in the forming of the second through-hole H2 after the forming of the first through-holes H1, only the top plan views of the glass layer 110 when viewed from above are illustrated, while omitting expressions regarding the forming of the second through-hole H2 and the forming of the second wiring layer 122 on the first via layer 130. Meanwhile, the shape and number of first holes h1 and the shape and number of first through-holes H1 are merely exemplary, and may be modified in various ways.
Meanwhile, in
Referring to
In a case in which the adhesive layer 140 includes an inorganic oxide film, the adhesive layer 140 may be a thin oxide film including a metal oxide. The metal oxide may include at least one of Al2O3, SiO2, TiO2, ZnO, ZrO2, HfO2, and La2O3, but may also include a metal oxide doped with a different metal element. The metal oxide may preferably include alumina (Al2O3). In a case in which the adhesive layer 140 includes an inorganic oxide film, the adhesive layer 140 may be formed using a thin film deposition technique, such as an atomic layer deposition (ALD) technique or a molecular vapor deposition (MVD) technique. As the adhesive layer 140 is formed using a thin film deposition technique, the adhesive layer 140 may include an oxide film that is thinner than the first insulating layer 111 and the glass layer 110. As a non-limiting example, the adhesive layer 140 may include a thin oxide film having a thickness of less than 0.1 μm, preferably about 0.001 μm to 0.05 μm.
In a case in which the adhesive layer 140 includes an organic film, the adhesive layer 140 may be a thin organic film including an organic material. As the organic material, a primer resin for adhesion or a promoter for adhesion such as an adhesion promoter (AP) may be used. In a case in which the adhesive layer 140 includes an organic material, the adhesive layer 140 may be formed using a coating method. As a non-limiting example, the material of the adhesive layer 140 may be coated on the first insulating layer 111 by spraying or by dipping, but the coating method is not limited thereto. Any coating method may be used without limitation as long as a thin organic film can be formed on the first insulating layer 111.
Meanwhile, the material of the adhesive layer 140 is not limited thereto, and any other material may be used without limitation as long as the material can be disposed between the first insulating layer 111 and the glass layer 110 for use as a means capable of securing adhesion between the first insulating layer 111 and the glass layer 110.
The first via layer 130 may be disposed to penetrate the adhesive layer 140. More specifically, the first via portion 131 of the first via layer 130 may be disposed to penetrate the adhesive layer 140. That is, an opening of the adhesive layer 140 may have the same width as the first through-hole of the glass layer 110. Meanwhile, the adhesive layer 140 is not necessarily limited thereto, and the opening of the adhesive layer 140 may have the same width as the second through-hole of the first insulating layer 111. In this case, the second via portion 132 of the first via layer 130 may penetrate the adhesive layer 140, and at least a portion of the first via portion 131 of the first via layer 130 may be disposed on the adhesive layer 140. This will be described in more detail in the manufacturing method below.
Referring to
Referring to
Thereafter, even in the forming of the first through-hole H1 by removing a portion of the glass layer 110, the adhesive layer 140 may not react.
Thereafter, an opening may be formed in the adhesive layer 140 to correspond to the width of the first through-hole H1. By removing a portion of the adhesive layer 140 exposed through the lower side of the first through-hole H1, the opening may be formed in the adhesive layer 140 and the first insulating layer 111 may be exposed to form a second through-hole H2. As a method of removing the portion of the adhesive layer 140, etching such as dry or wet etching may be used. However, the method of removing the portion of the adhesive layer 140 is not limited thereto, and any method may be used without limitation as long as the adhesive layer 140 can be selectively removed. In the forming of the opening by removing the portion of the adhesive layer 140, the glass layer 110 may not react, and the first insulating layer 111 may also not react. That is, only the adhesive layer 140 may be selectively removed.
Thereafter, the upper side of the first wiring layer 121 may be exposed by forming a second through-hole H2 penetrating the first insulating layer 111. At this time, a portion of the adhesive layer 140 may be removed to correspond to the first through-hole H1, and accordingly, a portion of the upper surface of the first insulating layer 111 may be exposed by the first through-hole H1 and the opening of the adhesive layer 140.
Referring to
In
Referring to
Thereafter, in the forming of the second through-hole penetrating the first insulating layer 111, the adhesive layer 140 may be processed simultaneously with the first insulating layer 111. That is, since both the first insulating layer 111 and the adhesive layer 140 include organic materials, an opening of the adhesive layer 140 may be formed simultaneously in the forming of the second through-hole H2 by performing processing once. As the second through-hole H2 and the opening of the adhesive layer 140 are formed simultaneously, the opening of the adhesive layer 140 may correspond to the second through-hole H2, and the opening may have substantially the same width as the second through-hole H2. At this time, the bottom surface exposed by the first through-hole H1 may be the adhesive layer 140.
Thereafter, by forming a first via layer 130, the first via portion 131 of the first via layer 130 may be formed on the adhesive layer. That is, the second via portion 132 penetrating the first insulating layer 111 may penetrate the adhesive layer 140.
Meanwhile, among the configurations other than the adhesive layer 140, the configurations that are the same as those in the printed circuit boards and the methods of manufacturing the same according to the first exemplary embodiment and the modifications thereof may be applied to the printed circuit board and the method of manufacturing the same according to the second exemplary embodiment, and thus, redundant description thereof will be omitted.
Referring to
The second insulating layer 112 may include an organic insulating material. The organic insulating material may include a thermosetting resin such as an epoxy resin, a thermoplastic resin such as a polyimide, or a material containing an inorganic filler, an organic filler, and/or a glass fiber, a glass cloth or a glass fabric together with the resin. For example, the insulating material may be a non-photosensitive insulating material such as Ajinomoto build-up film (ABF) or prepreg (PPG), but is not limited thereto, and another type of polymer material may be used as an insulating material. Alternatively, the insulating material may be a photosensitive insulating material such as photoimageable dielectric (PID). In addition, the insulating material may include an adhesive sheet such as a bonding sheet (BS). The second insulating layer 112 may include substantially the same insulating material as the first insulating layer 111. Specifically, the second insulating layer 112 may preferably include an Ajinomoto build-up film (ABF), but is not limited thereto, and may include an organic insulating material different from that of the first insulating layer 111. Meanwhile, the second insulating layer 112 is illustrated as one insulating layer in
As the second insulating layer 112 may be further included on the glass layer 110, the second wiring layer 122 may be disposed on the second insulating layer 112. That is, the second wiring layer 122 may be disposed in contact with the second insulating layer 112. This makes it possible to solve the problem that adhesion between the glass layer 110 and the second wiring layer 122 is relatively low. In this case, even if the seed layer 125 includes an electroless plating layer (or chemical copper), adhesion can be secured on the second insulating layer 112.
The first via layer 130 may further include a third via portion 133 penetrating the second insulating layer 112. The third via portion 133 may be located on the first via portion 131, and all of the first via portion 131, the second via portion 132, and the third via portion 133 may be integrally formed. Also, the third via portion 133 may be integrally formed with the second wiring layer 122.
In the cross-sectional view, each of the first via portion 131, the second via portion 132, and the third via portion 133 may have a width becoming narrower toward the first wiring layer 121. This may be a result of, after stacking the first insulating layer 111, the glass layer 110, and the second insulating layer 112, forming the third through-hole penetrating the second insulating layer 112, the first through-hole penetrating the glass layer 110, and the second through-hole penetrating the first insulating layer 111, and then forming the first via layer 130. That is, since areas where the first via portion 131, the second via portion 132, and the third via portion 133 of the first via layer 130 are to be formed are processed in the same direction to form through-holes, each of the first via portion 131, the second via portion 132, and the third via portion 133 may have a width becoming narrower toward the first wiring layer 121. Meanwhile, it is illustrated in
At the interface between the glass layer 110 and the second insulating layer 112, the first via portion 131 may have a smaller width than the third via portion 133. This may be a result of forming the first through-hole penetrating the glass layer 110 after forming the third through-hole H3 penetrating the second insulating layer 112.
The second insulating layer 112 may be thinner than the glass layer 110, but is not necessarily limited thereto. A long insulation distance between the first wiring layer 121 and the second wiring layer 122 may increase an overall thickness of the printed circuit board. Therefore, the second insulating layer 112 may be formed sufficiently thin if the adhesion of the glass layer 110 can be improved. That is, it is preferable that the second insulating layer 112 is formed sufficiently thin if adhesion can be secured between the glass layer 110 and the second insulating layer 112 to the extent that the second insulating layer 112 is not separated from the glass layer 110. Meanwhile, since the second insulating layer 112 is thinner than the glass layer 110, the first via portion 131 may be deeper than the third via portion 133 in the first via layer 130.
Referring to
Referring to
Thereafter, a first through-hole H1 penetrating the glass layer 110 may be formed. The forming of the first through-hole H1 may be performed by forming the first hole h1 and forming the first through-hole H1. Meanwhile, in the method of manufacturing a printed circuit board according to the third exemplary embodiment, since the first through-hole H1 penetrating the glass layer 110 is formed after the second insulating layer 112 is formed on the glass layer 110, it is preferable to set etching conditions in the forming of the first through-hole H1 so that the thickness of the glass layer 110 does not decrease. This makes it possible to prevent a decrease in the thickness of the glass layer 110 in the forming of the first through-hole H1.
Meanwhile, it is illustrated in
Thereafter, a second through-hole H2 penetrating the first insulating layer 111 may be formed.
Referring to
In each of
Referring to
In the printed circuit board according to the first modification of the third exemplary embodiment, the first via portion 131 may be wider than the third via portion 133 in the first via layer 130 at the interface between the glass layer 110 and the second insulating layer 112. This may result from the shape of the through-hole created in the forming of the first through-hole H1 penetrating the glass layer 110. As the width of the first via portion 131 of the first via layer 130 increases, it is possible to increase a contact area between the first via layer 130 and the second insulating layer 112, which may be advantageous in securing adhesion.
Referring to
In the printed circuit board according to the second modification of the third exemplary embodiment, the first via portion 131 of the first via layer 130 may have a step between the upper and lower surfaces of the glass layer 110. Not limited thereto, the first via portion 131 of the first via layer 130 may have an inflection portion in the glass layer 110, and may have a curved surface. This may result from the shape of the first through-hole H1 penetrating the glass layer 110 in the above-described method of manufacturing a printed circuit board. As the width of the first via portion 131 of the first via layer 130 increases and a point where the width changes occurs in the first via portion 131 of the first via layer 130, it is possible to increase a contact area between the first via layer 130 and the second insulating layer 112 and a contact area between the first via layer 130 and the glass layer 110, which may be advantageous in securing adhesion.
Meanwhile, among the configurations other than the second insulating layer 112 and the shape of the first via layer 130, the configurations that are the same as those in the printed circuit boards and the methods of manufacturing the same according to the first exemplary embodiment and the modifications thereof and those in the printed circuit boards and the methods of manufacturing the same according to the second exemplary embodiment and the modifications thereof may be applied to the printed circuit board and the method of manufacturing the same according to the third exemplary embodiment, and thus, redundant description thereof will be omitted.
The printed circuit boards and the methods of manufacturing the same according to the first to third exemplary embodiments have been described above, focusing on the insulating structure between the first wiring layer 121 and the second wiring layer 122. Hereinafter, printed circuit boards to which such an insulating structure is applied will be schematically described with reference to the drawings. Although various application examples to which the interlayer structure according to the first exemplary embodiment is applied are illustrated for the purpose of convenience, the application examples are not limited thereto. The interlayer structures according to the second and third exemplary embodiments and the modifications thereof may be applied, and various combinations thereof may also be applied.
Referring to
The build-up insulating layer 151 may include an organic insulating material. The organic insulating material may include a thermosetting resin such as an epoxy resin, a thermoplastic resin such as a polyimide, or a material containing an inorganic filler, an organic filler, and/or a glass fiber, a glass cloth or a glass fabric together with the resin. For example, the insulating material may be a non-photosensitive insulating material such as Ajinomoto build-up film (ABF) or prepreg (PPG), but is not limited thereto, and another type of polymer material may be used as an insulating material. Alternatively, the insulating material may be a photosensitive insulating material such as photoimageable dielectric (PID). In addition, the insulating material may include an adhesive sheet such as a bonding sheet (BS). Specifically, the build-up insulating layer 151 may preferably include an Ajinomoto build-up film (ABF), but is not limited thereto, and may include another organic insulating material. Meanwhile, the build-up insulating layer 151 is illustrated as an insulating layer constituted by one layer in
The build-up wiring layer 152 may include a metal. The metal may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), and/or alloys thereof. The build-up wiring layer 152 may preferably include copper (Cu), but is not limited thereto. The build-up wiring layer 152 may perform various functions each depending on design. For example, the build-up wiring layer 152 may include a signal pattern, a power pattern, a ground pattern, or the like. Each of these patterns may have various forms such as lines, planes, and pads. The build-up wiring layer 152 may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper). Alternatively, the build-up wiring layer 152 may include a metal foil (or a copper foil) and an electrolytic plating layer (or electric copper). Alternatively, the build-up wiring layer 152 may include a metal foil (or a copper foil), an electroless plating layer (or chemical copper), and an electrolytic plating layer (or electric copper). The build-up wiring layer 152 may include a sputtering layer instead of the electroless plating layer (or chemical copper), or the build-up wiring layer 152 may include both a sputtering layer and an electroless plating layer (or chemical copper) if necessary. The build-up wiring layer 152 may be formed using any one technique among a semiadditive process (SAP), a modified semiadditive process (MSAP), a tenting (TT) process, and a subtractive process, but is not limited thereto. Any technique may be used without limitation if the technique is capable of configuring a circuit on a printed circuit board. In addition, the build-up wiring layer 152 may be formed using a different technique depending on the purpose of use and the design.
The build-up via layer 153 may include a micro via. The micro via may be filled via filling a via hole or a conformal via disposed along a wall of a via hole. The micro via may be disposed as a stacked type via and/or a staggered type via. The build-up via layer 153 may include a metal, and the metal may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof, and preferably copper (Cu), but is not limited thereto. The build-up via layer 153 may preferably include copper (Cu), but is not limited thereto. The build-up via layer 153 may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper), but is not limited thereto. The build-up via layer 153 may include a sputtering layer instead of the electroless plating layer, or the build-up via layer 153 may include both a sputtering layer and an electroless plating layer if necessary. The build-up via layer 153 may perform various functions each depending on design. For example, the build-up via layer 153 may include a ground via, a power via, a signal via, or the like.
Meanwhile, in the printed circuit board according to the first application example of the first exemplary embodiment, the first wiring layer 121 and the first insulating layer 111 may be located on the outermost side of the printed circuit board. That is, the first wiring layer 121 may function as a connection pad of the printed circuit board, and may perform a function for connection with an electronic component or the like mounted on the printed circuit board.
The printed circuit board according to the first application example of the first exemplary embodiment may include a solder resist layer 160 disposed on the first insulating layer 111 and covering at least a portion of the first wiring layer 121. The solder resist layer 160 may be disposed on the outermost side of the printed circuit board to function to protect the printed circuit board. The solder resist layer 160 may be disposed on the first insulating layer 111, which is the uppermost side based on
Referring to
The printed circuit board according to the second application example of the first exemplary embodiment may further include a build-up insulating layer 151 disposed on one side of the first insulating layer 111, a build-up wiring layer 152 embedded in the build-up insulating layer 151 on one side thereof, and a build-up via layer 153 penetrating at least a portion of the build-up insulating layer 151 to connect the build-up wiring layer 152 and the first wiring layer 121 to each other.
Referring to
Referring to
Referring to
Meanwhile,
As a non-limiting example, the printed circuit board according to any one of the first to fifth application examples may further include a surface treatment layer disposed on the wiring layer exposed by the opening of the solder resist layer 160. The surface treatment layer may include any one of nickel (Ni), palladium (Pd), and gold (Au), and may be implemented by a plurality of metal layers. For example, the surface treatment layer may be at least a portion of an electroless nickel electroless palladium immersion gold (ENEPIG) structure, or at least a portion of an electroless nickel immersion gold (ENIG) structure. The surface treatment layer is not limited thereto, and may include an organic solder passivation (OSP) structure containing organic materials. The surface treatment layer can improve adhesion and signal transmission between the wiring layer and the connection means such as solder.
Referring to
The carrier substrate C, which serves to support an insulating layer and a wiring layer at the time of forming them, and may be formed of an insulating material or a metal material. It is illustrated in
The first wiring layer 121 may be formed on the carrier substrate C, and the first insulating layer 111 may also be disposed on the carrier substrate C to embed the first wiring layer 121. That is, it may be understood, in the method of manufacturing a printed circuit board according to the first exemplary embodiment described with reference to
Referring to
The build-up insulating layer 151 may be formed on the glass layer 110 using a known build-up layer stacking method, and the build-up wiring layer 152 and the build-up via layer 153 may be formed using any method for building up an insulating layer and a wiring layer that can be used by those skilled in the art.
The carrier substrate C may be removed by applying one of various methods depending on the shape of the carrier substrate C. For example, in the removing of the carrier substrate C, the seeds may be removed sequentially after removing the core included in the carrier substrate, or the carrier substrate may be removed integrally, that is, the core and the copper foils may be removed simultaneously. The carrier substrate C may be removed using a known process used for detaching a carrier without limitation.
Meanwhile, although not illustrated in
After removing the carrier substrate C, the method may include forming a solder resist layer 160 on each of the first insulating layer 111 and the build-up insulating layer 151. The solder resist layer 160 may be formed using any method for building up an insulating layer and a wiring layer that can be used by those skilled in the art.
Referring to
The other configurations in
Referring to
Referring to
Referring to
The through via 158 may include a metal layer formed on a wall of a through-hole penetrating the core layer 157 and a plug filling the metal layer. The metal layer may include copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof, and may preferably include copper (Cu), but is not limited thereto. The plug may include ink as an insulating material. The metal layer may include an electroless plating layer (or chemical copper) and an electrolytic plating layer (or electric copper), but is not limited thereto. The metal layer may include a sputtering layer instead of the electroless plating layer, or the metal layer may include both a sputtering layer and an electroless plating layer. The through via 158 may perform various functions each depending on design. For example, the through via 158 may include a ground via, a power via, a signal via, or the like.
In the printed circuit board according to the sixth application example of the first exemplary embodiment, the wiring layer contacting the core layer 157 may be positioned as a first wiring layer 121, and the interlayer structure according to the first exemplary embodiment may be applied onto the core layer 157. Meanwhile, it is illustrated in
Referring to
Meanwhile,
The method of manufacturing a printed circuit board according to the sixth application example of the first exemplary embodiment may further include forming a first wiring layer 121 on the core layer 157, and forming a first insulating layer 111 on the core layer 157 to cover at least a portion of the first wiring layer 121. That is, it may be understood, in the method of manufacturing a printed circuit board according to the first exemplary embodiment described with reference to
The other configurations in
In addition, the printed circuit boards and the methods of manufacturing the same according to the first to seventh application examples are not limited to the configurations illustrated in the drawings, and other configurations may further be included, or any of the configurations illustrated in the drawings may be omitted in a certain case. That is, the printed circuit board may further include configurations that can be used by those skilled in the art, not limited to the configurations illustrated in the drawings.
As set forth above, according to the exemplary embodiments in the present disclosure, it is possible to provide a printed circuit board including a glass layer and a method of manufacturing the same.
In addition, it is possible to provide a printed circuit board capable of preventing warpage with improved flatness and a method of manufacturing the same.
In addition, it is possible to provide a printed circuit board capable of improving reliability and a method of manufacturing the same.
While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present invention as defined by the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
10-2023-0118607 | Sep 2023 | KR | national |
10-2023-0192933 | Dec 2023 | KR | national |