Claims
- 1. In a plasma generating semiconductor processing apparatus comprising a reactor chamber and an exhaust system through which reactor chamber gases are removed from said reaction chamber, the improvement comprising a coating of a polyfluoroethylene polymer selected from the group consisting of polytetrafluoroethylene (--CF.sub.2 CF.sub.2 --) polychlorotrifluoroethylene (--CF.sub.2 CFCl--).sub.n and copolymers of tetrafluoroethylene and chorotrifluoroethylene, said polyfluoroethylene polymer being in the form of an oil, grease or wax and having a molecular weight of between about 5000 to about 800,000, on at least a portion of the interior surfaces of said reactor chamber and said exhaust system, wherein said coating exhibits a sticking coefficient of 10.sup.-4 or less and contributes a partial pressure which is less than 1% of the total pressure at which said chamber is operated, over the entire operational range for said chamber.
- 2. The semiconductor processing apparatus of claim 1 wherein said coating is applied to at least portions of the interior surfaces of said exhaust system only.
- 3. The semiconductor processing apparatus of claim 1 in which the polyfluoroethylene polymer coating is in the form of a film.
- 4. The semiconductor processing apparatus of claim 3 in which said polyfluoroethylene polymeric film is comprised of polytetrafluoroethylene (--CF.sub.2 CF.sub.2 --).sub.n.
- 5. The semiconductor processing apparatus of claim 3 in which said film has a thickness of 300,000 Angstroms (30 .mu.m) or less.
- 6. The semiconductor processing apparatus of claim 3 in which said polyfluoroethylene film is comprised of polychlorotrifluoroethylene.
- 7. The semiconductor processing apparatus of claim 6 in which said polychlorotrifluoroethylene has a molecular weight ranging from about 10,000 to about 500,000 and said film has a thickness ranging from about 5 (0.0005 .mu.m) to about 20,000 Angstroms (2 .mu.m).
- 8. The semiconductor processing apparatus of claim 3 in which said polyfluoroethylene polymeric film is comprised of a copolymer of tetrafluoroethylene and chlorotrifluoroethylene.
- 9. The apparatus of claim 1 in which the semiconductor process is plasma etching.
- 10. The semiconductor processing apparatus of claim 1 in which the polyfluoroethylene polymer is polytetrafluoroethylene (--CF.sub.2 CF.sub.2 --).sub.n.
- 11. The semiconductor processing apparatus of claim 1 in which the polyfluoroethylene polymer is polychlorotrifluoroethylene (--CF.sub.2 CFCl--).sub.n.
- 12. The semiconductor processing apparatus of claim 1 in which the polyfluoroethylene polymer is a copolymer of tetrafluoroethylene and chlorotrifluoroethylene.
Parent Case Info
This application is a continuation of prior U.S. application Ser. No. 08/138,528, filed Oct. 15, 1993, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0140975 |
May 1985 |
EPX |
Non-Patent Literature Citations (1)
Entry |
"Mass Accomodation Coefficient for HO.sub.2 Radicals on Aqueous Particles" by Michael Mozurkewich et al., Journal of Geophysical Research, vol. 92, No. D4, pp. 4163-4170, Apr. 20, 1987. |
Continuations (1)
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Number |
Date |
Country |
Parent |
138528 |
Oct 1993 |
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