Information
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Patent Application
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20070190458
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Publication Number
20070190458
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Date Filed
February 08, 200717 years ago
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Date Published
August 16, 200717 years ago
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Inventors
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Original Assignees
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CPC
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US Classifications
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International Classifications
Abstract
A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a norbornane group having hexafluoroisopropyl alcohol, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
Claims
- 1. A resist composition comprising
(A) a silicone resin,(B) an acid generator,(C) an organic nitrogen-containing compound, and(D) an organic solvent,said silicone resin (A) being obtained through cohydrolytic condensation of a mixture comprising hydrolyzable silane monomers having the general formulae (1), (2) and (3):
- 2. The resist composition of claim 1, wherein the silane monomer of formula (1) is a silane monomer having the structure (4):
- 3. The resist composition of claim 1, wherein in formula (3), R5 is an organic group having an alicyclic structure and a 5-membered lactone structure bonded thereto, and the silicon atom is bonded to one of carbon atoms in the alicyclic structure.
- 4. The resist composition of claim 1, wherein the silane monomer of formula (3) is a silane monomer having the structure (5) or (6):
- 5. The resist composition of claim 1, wherein said mixture further comprises a hydrolyzable monomer having at least two hydrolyzable substituent groups other than formulae (1), (2) and (3).
- 6. The resist composition of claim 1, wherein said mixture further comprises a compound having the general formula (7):
SiX4 (7)
- 7. A pattern forming process comprising the steps of:
forming a pattern on an aromatic-containing resin film using the resist composition of claim 1, andetching the resin film through the resulting pattern as an etching mask for thereby patterning the resin film.
- 8. The pattern forming process of claim 7, wherein the etching step uses a gas plasma containing oxygen.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2006-035132 |
Feb 2006 |
JP |
national |