International Electron Devices Meeting, 9-th-11th Dec. 1974, Technical Digest, Washington, D.C., pp. 279-282; H. Kamioka et al.: "A New Sub-Micron Emitter Formation with Reduced Base Resistance for Ultra High Speed Devices". |
Patent Abstracts of Japan, vol. 7, No. 200 (E-196) [1345], 3rd Sep. 1983; & JP-A-58 98 942 (Hitachi Seisakusho K.K.). |
IBM Technical Disclosure Bulletin, vol. 26, No. 8, Jan. 1984, pp. 4304-4307, New York, U.S.; F. S. Lai: "Self-Aligned Contact Process Using an Ion-Implanted Silicon Nitride Film as an Oxidation Mask". |