SEMICONDUCTOR CHIP

BACKGROUND
Technical Field

The present disclosure relates to semiconductor structure, and more particularly to semiconductor chip.

Description of the Related Art

Electronic components are integrally formed on a substrate. Such substrates typically include active devices and passive devices. Various factors make active devices different from passive devices, such as their functions, the nature of their energy, and their power gain. Active devices include transistors such as pseudomorphic high electron mobility transistors (pHEMT), metal-oxide semiconductor field effect transistors (MOSFETs), complementary metal-oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJTs), laterally diffused MOS (LDMOS) transistors, high-voltage transistors, high-frequency transistors, and diodes. Passive devices include capacitors, resistors, and inductors.

With active devices and passive devices are integrated into a single chip, it is necessary to prevent the wafer from warping, and to provide sufficient moisture resistance to protect those devices.

Although existing semiconductor structure packaging technologies have generally been adequate for their intended purposes, they have not been entirely satisfactory in all respects, and need to be improved.

BRIEF SUMMARY

The present disclosure provides a semiconductor chip. The semiconductor chip includes an active device formed over a substrate. The semiconductor chip also includes a passive device formed over a substrate. The semiconductor chip also includes a passivation layer covering the active device and the passive device. The semiconductor chip also includes a barrier structure surrounding the active device. The semiconductor chip also includes a ceiling layer suspended on the barrier structure over the active device. The ceiling layer has an opening exposing the barrier structure.

The present disclosure also provides a semiconductor chip. The semiconductor chip includes an active device formed over a substrate. The semiconductor chip also includes a passive device formed over the substrate beside the active device. The semiconductor chip also includes a passivation layer formed over the active device and the passive device. The semiconductor chip also includes a barrier structure surrounding the active device and covering the passive device. The semiconductor chip also includes a ceiling layer formed over the barrier structure. The ratio of the area of the ceiling layer to the area of the semiconductor chip is in a range of about 2% to about 50%.

The present disclosure further provides a semiconductor chip. The semiconductor chip includes an active device, a passive device, and a pad structure formed over a substrate. The semiconductor chip also includes a barrier structure surrounding the active device. The semiconductor chip also includes a ceiling layer formed directly above the active device and over the barrier structure. The semiconductor chip also includes a via structure formed in the substrate. The semiconductor chip also includes a metal stack conformally formed as the via structure and under the substrate.

A detailed description is given in the following embodiments with reference to the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1A-1F are cross-sectional representations of various stages of forming a semiconductor chip in accordance with some embodiments.

FIG. 2 is a top view of a semiconductor chip in accordance with some embodiments.

FIGS. 3A-3D are cross-sectional representations of various stages of forming a semiconductor chip in accordance with some embodiments.

FIG. 4 is a top view of a semiconductor chip in accordance with some embodiments.

FIGS. 5A-5D are cross-sectional representations of various stages of forming a semiconductor chip in accordance with some embodiments.

FIG. 6 is a top view of a semiconductor chip in accordance with some embodiments.

FIGS. 7A-7D are cross-sectional representations of various stages of forming a semiconductor chip in accordance with some embodiments.

FIG. 8 is a top view of a semiconductor chip in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to other elements or features as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

Herein, the terms “around,” “about,” “substantial” usually mean within 20% of a given value or range, preferably within 10%, and better within 5%, or 3%, or 2%, or 1%, or 0.5%. It should be noted that the quantity herein is a substantial quantity, which means that the meaning of “around,” “about,” “substantial” are still implied even without specific mention of the terms “around,” “about,” “substantial.”

Although some embodiments are discussed with operations performed in a particular order, these operations may be performed in another logical order. In different embodiments, additional operations can be provided before, during, and/or after the stages described the present disclosure. Some of the stages that are described can be replaced or eliminated for different embodiments. Additional features can be added to the semiconductor structure in the present disclosure. Some of the features described below can be replaced or eliminated for different embodiments.

The present disclosure provides a semiconductor chip. The semiconductor chip may include an active device, a passive device, and a pad structure. A passivation layer is formed over the devices. A shielding structure including a barrier structure and a ceiling layer is formed surrounding the active device. A cavity may be formed between the shielding structure and the active device. The cavity may reduce the capacitance. The ceiling layer may only partially overlap the barrier structure, which may reduce wafer warpage. The passivation layer is defined by the barrier structure and the ceiling layer of the shielding structure. In addition, a backside metal stack may be formed under the substrate. The backside metal stack may include a compensating layer which may provide tensile stress to further reduce wafer warpage.

FIGS. 1A-1F are cross-sectional representations of various stages of forming a semiconductor chip 10a in accordance with some embodiments. FIG. 2 is a top view of a semiconductor chip 10a in accordance with some embodiments. In some embodiments, the semiconductor chip 10a includes an active device 100a, a passive device 100b, and a pad structure 100c formed over a substrate 102.

The active device 100a may include field effect transistors (FETs), such as gallium nitride high electron mobility transistors (GaN HEMT) and pseudomorphic high electron mobility transistor devices (pHEMTs). The active device 100a may also include a bipolar junction transistor (BJT) such as a heterojunction bipolar transistor (HBT). The passive device 100b may be capacitors, resistors, inductors, or other suitable passive devices. In some embodiments as shown in FIGS. 1A-1F, the active device 100a is a pHEMT structure and the passive device 100b is a capacitor. However, the devices of the embodiments of the disclosure are not limited thereto. There may be other active devices 100a and passive devices 100b, depending on the demands.

The pHEMT structure 100a is used in a power amplifier operating at a high frequency (e.g., at MHz frequencies, or at THz frequencies). For example, the pHEMT structures 100a according to embodiments of the present disclosure may be used in power amplifiers operating at D-band (in a range between 110 GHz and 170 GHz) or UHF band (in a range between 300 MHz and 3 GHz).

A substrate 102 is provided, as shown in FIG. 1A in accordance with some embodiments. The substrate 102 may be a semiconductor substrate. The substrate 102 may include III-V semiconductors such as GaN, AlGaN, AlN, GaAs, AlGaAs, InP, InAlAs, InGaAs, or a combination thereof. The substrate 102 may include undoped GaAs. Also, several electronic devices may be formed over the substrate 102.

In some embodiments, the substrate 102 includes a first region 102a, a second region 102b, and a third region 102c. In some embodiments, the active device 100a is formed in the first region 102a, the passive device 100b is formed in the second region 102b, and the pad structure 100c is formed in the third region 102c.

It should be noted that, the numbers of the active device 100a, the passive device 100b, the pad structure 100c shown in FIG. 1A is merely an example, the device of the embodiments of the disclosure is not limited thereto. There may be more than one active device 100a, one passive device 100b, and one pad structure 100c in the semiconductor chip 10a.

A compound semiconductor epitaxial layer 103 is formed over the substrate 102, as shown in FIG. 1A in accordance with some embodiments. The compound semiconductor epitaxial layer 103 formed over the substrate 102 serves as a base underlying the subsequently formed electrodes of the pHEMT device. The compound semiconductor epitaxial layer 103 may be a multilayer structure, and may include group III-V semiconductors such as GaN, AlGaN, AlN, GaAs, AlGaAs, InP, InAlAs, InGaAs, GaSb, or a combination thereof. The compound semiconductor epitaxial layer 103 may include one or more highly doped p-type GaAs layers which are doped by C, Mg, Zn, Ca, Be, Sr, Ba, and Ra. The doping concentration of the compound semiconductor epitaxial layer 103 may be in a range of between 1e18 cm⁻³to 1e20 cm⁻³. The compound semiconductor epitaxial layer 103 may be formed by molecular-beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), hydride vapor phase epitaxy (HVPE), another suitable method, or a combination thereof.

The compound semiconductor epitaxial layer 103 of the pHEMT device may include several films epitaxially grown on the semiconductor substrate, such as a buffer layer, a channel layer, a carrier supply layer, and a Schottky barrier layer. The buffer layer may be formed over the semiconductor substrate, and the channel layer may be formed on the buffer layer. The carrier supply layer may be formed on the channel layer, and the Schottky barrier layer may be formed on the carrier supply layer. Electrodes formed subsequently may be disposed on the Schottky barrier layer.

The semiconductor substrate includes GaAs, and the buffer layer may include at least one of GaAs and AlGaAs. The channel layer may include at least one of GaAs and InGaAs, and the carrier supply layer may include at least one of AlGaAs, AlGaAsP and InAlGaAs. The Schottky barrier layer may be a single-layer structure or a multi-layer structure. The Schottky barrier layer may include AlGaAs, AlGaAsP, InAlGaAs, InGaP, InGaPAs, AlInGaP, or a combination thereof.

A gate electrode 104 is formed over the first region 102a of the substrate 102, as shown in FIG. 1A in accordance with some embodiments. The gate electrode 104 may include molybdenum (Mo), tungsten (W), tungsten-silicide (WSi), titanium (Ti), tungsten-titanium (TiW), iridium (Ir), palladium (Pd), platinum (Pt), nickel (Ni), cobalt (Co), chromium (Cr), ruthenium (Ru), osmium (Os), rhodium (Rh), tantalum (Ta), tantalum nitride (TaN), aluminum (Al), rhenium (Re), other applicable conductive materials, or a combination thereof. The gate electrode 104 may be formed by a physical vapor deposition (PVD) process (such as resistive heating evaporation, e-beam evaporation, or sputtering), a chemical vapor deposition (CVD) process (such as a low pressure chemical vapor deposition process or a plasma enhanced chemical vapor deposition process), electroplating, atomic layer deposition (ALD), other suitable process, or a combination thereof. In some embodiments, the gate electrode 104 is formed by an evaporation process. In some embodiments, the gate electrode 104 has a crown shape. A Schottky contact may be formed between the gate electrode 104 and the substrate 102.

Next, source/drain electrodes 106 are formed on opposite sides of the gate electrode 104 over the substrate 102, as shown in FIG. 1A in accordance with some embodiments. In some embodiments, each of the source/drain electrodes 106 includes a capping portion 106a and a conductive portion 106b formed over the capping portion 106a. The capping portion 106a of the source/drain electrodes 106 may be formed by a deposition process (e.g., molecular-beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), hydride vapor phase epitaxy (HVPE), another process, or a combination thereof) followed by a patterning process. In some embodiments, the capping portion 106a of the source/drain electrodes 106 includes a group III-V semiconductor such as GaN, AlGaN, AlN, GaAs, AlGaAs, InP, InAlAs, InGaAs, or a combination thereof. The capping portion 106a of the source/drain electrodes 106 may include highly doped n-type InGaAs, and may form ohmic contact with the subsequently formed conductive portion 106b of the source/drain electrodes 106.

The conductive portion 106b of the source/drain electrodes 106 may respectively include Ti, Al, W, Au, Pd, Au, Ge, Ni, Mo, Pt, other applicable metals, their alloys, or a combination thereof. The conductive portion 106b of the source/drain electrodes 106 may be formed by a deposition process followed by a patterning process. The deposition process may include electroplating, sputtering, resistive heating evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), another suitable process, or a combination thereof. The patterning process may include a photolithography process, an etching process, another applicable process, or a combination thereof. The conductive portion 106b of the source/drain electrodes 106 may also be referred as source/drain metal layers.

The semiconductor structure 10a also includes a dielectric layer 110 conformally formed on the active device 100a, as shown in FIG. 1A in accordance with some embodiments. In some embodiments, the dielectric layer 110 covers the exposed parts of the top surface of the compound semiconductor epitaxial layer 103, thereby preventing oxidation of the compound semiconductor epitaxial layer 103. In some embodiments, the dielectric layer 110 also functions as a barrier that protects the active devices 100a from moisture.

The dielectric layer 110 may include Si₃N₄, SiO₂, SiO_xN_y, one or more other suitable dielectric materials, or a combination thereof. The dielectric layer 110 may be formed by low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), evaporation, or other suitable methods.

The dielectric layer 110 is directly and conformally formed on the gate electrodes 104 and the source/drain electrodes 106, as shown in FIG. 1A in accordance with some embodiments. For example, the dielectric layer 110 may cover the outer surfaces of the gate electrodes 104. The dielectric layer 110 may also cover the top surface and the sidewalls of the source/drain electrodes 106. Specifically, the dielectric layer 110 covers the top surface and sidewalls of the conductive portion 106b and sidewalls of the capping portion 106a of the source/drain electrodes 106.

A passive device 100b such as a capacitor 108 is formed in the second region 102b of the substrate 102, as shown in FIG. 1A in accordance with some embodiments. The capacitor 108 includes a first conductive portion 108a formed over the substrate 102 and a second conductive portion 108b formed over the first conductive portion 108a.

In some embodiments, the capacitor 108 also includes the dielectric layer 110 formed between the first conductive portion 108a and the second conductive portion 108b. The dielectric layer 110 may also covers the top surface and the sidewalls of the first conductive portion 108a, and the top surface and the sidewalls of the second conductive portion 108b may be exposed. The dielectric layer 110 may be formed directly over the first conductive portion 108a, and the second conductive portion 108b may be formed directly over the dielectric layer 110. It should be noted that the passive device 100b of the embodiments is not limited to the exemplary capacitor 108.

A pad structure 100c such as a conductive pad 112 is formed in the third region 102c of the substrate 102, as shown in FIG. 1A in accordance with some embodiments. The conductive pad 112 includes a first conductive portion 112a formed over the substrate 102 and a second conductive portion 112b formed over the first conductive portion 112a. In some embodiments, the second conductive portion 112b is in contact with the first conductive portion 112a.

The conductive pad 112 may also include the dielectric layer 110 formed over sidewalls of the first conductive portion 112a. The top surface and the sidewalls of the second conductive portion 112b may be exposed.

The conductive portion 106b of the source/drain electrodes 106 of the active device 100a, the first conductive portion 108a of the passive device 100b, and the first conductive portion 112a of the pad structure 100c may be formed by patterning the same conductive material layer.

The dielectric layer 110 may be conformally formed over the capping portion 106a and a conductive portion 106b of the source/drain electrodes 106, the gate electrode 104, the first conductive portion 108a of the passive device 100b, and the first conductive portion 112a of the pad structure 100c. Afterwards, an opening of the dielectric layer 110 may be formed over the first conductive portion 112a of the pad structure 100c, and the second conductive portion 108b of the passive device 100b and the second conductive portion 112b of the pad structure 100c may be formed over the first conductive portion 108a of the passive device 100b and the first conductive portion 112a of the pad structure 100c respectively. The opening of the dielectric layer 110 may be formed by a patterning process. The patterning process may include a photolithography process and etching process. Examples of photolithography processes include photoresist coating, soft baking, mask aligning, exposure, post-exposure baking, developing the photoresist, rinsing and drying. The etching process may be a dry etching process or a wet etching process.

Next, a passivation layer 114 is formed over the substrate 102, as shown in FIG. 1B in accordance with some embodiments. The passivation layer 114 may be formed over the entire substrate 102 as a passivation blanket film that covers the devices in the first region 100a, and the second region 100b, and the third region 100c. In some embodiments, the passivation layer 114 is formed over the dielectric layer 110 and the second conductive portions 108b and 112b. The passivation layer 114 may cover the active device 100a, the passive device 100b, the pad structure 100c, and the compound semiconductor epitaxial layer 103. The passivation layer 114 may provide an effective environmental barrier that protects the devices from moisture.

The passivation layer 114 may include Al₂O₃, Si₃N₄, SiO₂, SiO_xN_y, AlN, HfO₂, one or more other suitable passivation materials, or a combination thereof. In some embodiments, the passivation layer 114 includes Al₂O₃. The passivation layer 114 may be formed by atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), or other suitable methods. In some embodiments, the passivation layer 114 is deposited by atomic layer deposition.

In some embodiments, the passivation layer 114 has a thickness in the range of about 100 Å to about 750 Å. If the passivation layer 114 is too thick, the parasitic capacitance may be too great. If the passivation layer 114 is too thin, it may not protect the devices from moisture.

Next, a barrier structure 116 is formed surrounding the active device 100a and over the passive device 100b, as shown in FIG. 1C in accordance with some embodiments. The barrier structure 116 may be formed by providing a barrier material layer on the passivation layer 114, followed by patterning the barrier material layer. After the barrier material layer is patterned, the remaining portions of the barrier material layer are referred to as the first barrier portion 116a in the first region 102a and the second barrier portion 116b in the second region 102b. The barrier structure 116 may surround the gate electrodes 104 and the source/drain electrode 106 in the top view. The barrier structure 116 defines an opening 118 that exposes the portion of the passivation layer 114 that covers the gate electrodes 104 and the source/drain electrodes 106. In addition, the pad structure 112 is also exposed from the barrier structure 116. As shown in FIG. 1D, the barrier structure 116 is formed directly on the passivation layer 114, in accordance with some embodiments.

In some embodiments, the barrier structure 116 and the passivation layer 114 include different materials. The material of the barrier structure 116 may have lower moisture permeability than that of the material of the passivation layer 114. For example, the barrier structure 116 may be made of a material having a first water vapor transmission rate (WVTR), the passivation layer 114 may be made of another material having a second water vapor transmission rate, and the first water vapor transmission rate is less than the second water vapor transmission rate.

The barrier structure 116 may include one or more organic materials, such as a polymer material. The barrier structure 116 may include a photoresist material. Material examples of the barrier structure 116 include polydimethylsiloxane (PDMS), SU8 (i.e. an epoxy material from MicroChem Inc.®), CYTOP® (from Asahi Glass Company), DuPont® WPR® (wafer photoresist), and another appropriate material. Also, a barrier material layer may be formed over the substrate 102 by spin coating, spray coating, thermal vapor deposition (TVD) or any other suitable method, followed by patterning the barrier material layer to form the barrier structure 116. In some embodiments, the barrier structure 116 is formed using a dry film process.

The barrier material layer may be made of, but not limited to, the epoxy based, photo sensitive polymer SU8, and then SU8 is patterned by a lithography process to form the barrier structure 116. SU8 is a photoresist that has good mechanical durability, water impermeability and dielectric properties on polymerization, and can easily be patterned to obtain the portions with high aspect ratios. Thus, in some embodiments, SU8 can be used as the material to form the first barrier portion 116a of the barrier structure 116 with a high aspect ratio, thereby creating an opening 118 having a sufficient height.

In some embodiments, the barrier structure 116 has a thickness in the range of about 100000 Å to about 500000 Å. If the barrier structure 116 is too thick, substrate will be bent severely owing to residual stress. If the barrier structure 116 is too thin, the parasitic effect may degrade device performance.

Next, a ceiling layer 120 is formed on the barrier structure 116, thereby forming a shielding structure 122. The shielding structure 122 may include the barrier structure 116 and the ceiling layer 120 formed over the barrier structure 116. In some embodiments, the ceiling layer 120 is in direct contact with the barrier structure 116. The materials and processes for forming the ceiling layer 120 may be the same as, or similar to, those used for forming the barrier structure 116. For the purpose of brevity, the descriptions of the materials and processes of the ceiling layer 120 are not repeated herein.

In some embodiments, the ceiling layer 120 has a thickness in the range of about 100000 Å to about 500000 Å. If the ceiling layer 120 is too thick, substrate will be bent severely owing to residual stress. If the ceiling layer 120 is too thin, ceiling layer may be collapsed since weak mechanical strength.

In some embodiments, an air cavity 118 is formed over the active device 100a between the barrier structure 116 and the ceiling layer 120. In some embodiments, the ceiling layer 120 is suspended on the barrier structure 116, and configured as a roof of the shielding structure 122.

Position of the barrier structure 116 of the shielding structure 122 can be determined according to the design conditions of the application, such as the dimensions of the source/drain electrodes 106 and the gate electrodes 104, and the distances between the source/drain electrodes 106 and the gate electrodes 104.

In some embodiments as shown in FIG. 1D, the ceiling layer 120 of the shielding structure 122 only partially covers the barrier structure 116 of the shielding structure 122, and an opening 124 of the ceiling layer 120 is formed over the passive device 100b. In some embodiments, the ceiling layer 120 has the opening 124 exposing the barrier structure 116 on the passive device 100b. In some embodiments, the top surface of the barrier structure 116 covering the passive device 100b is partially exposed. In addition, the pad structure 100c may be exposed from the ceiling layer 120 and the barrier structure 116 of the shieling structure 122. With the opening 124 formed in the ceiling layer 120 exposing the barrier structure 116 over the passive device 100b, the wafer warpage may be reduced.

Next, the passivation layer 114 exposed from the shielding structure 122 is removed by using the ceiling layer 120 and the barrier structure 116 as a mask layer, as shown in FIG. 1E in accordance with some embodiments. The pattern of the passivation layer 114 may be defined by the pattern of the barrier structure 116 and the pattern of the ceiling layer 120. The passivation layer 114 may be removed by an etching process such as a dry etching process or a wet etching process. In some embodiments, the projection of the passivation layer 114 on the substrate 102 may overlap the projection of the barrier structure 116 and the ceiling layer 120 on the substrate 102 from a top view. In some embodiments, the passivation layer 114 is covered by the barrier structure 116 and the ceiling layer 120, and the passivation layer 114 is vertically separated from the ceiling layer 120.

Next, the semiconductor device 10a may be flipped over, and a via hole 126 is formed through the substrate 102 and the compound semiconductor epitaxial layer 103. In some embodiments, the via hole 126 is extended into the capping portion 106a of the source/drain electrode 106. The via hole 126 may be formed by a patterning process including a photolithography process and etching process.

Afterwards, a metal stack 128 including a compensating layer 132 sandwiched between a contact layer 130 and a conductive layer 134 is formed under the substrate 102. In some embodiments, the compensating layer 132, the contact layer 130, and the conductive layer 134 are conformally formed under the substrate 102 and a via structure 136 is formed in the via hole 126. The metal stack 128 is conformally formed in the via hole 126 as the via structure 136. In some embodiments as shown in FIG. 1F, the metal stack 128 is formed protruding in the substrate 102, the compound semiconductor epitaxial layer 103, and the source/drain electrode 106. The via structure 136 may be formed by the metal stack 128 formed in the via hole 126. In some embodiments, the via structure 136 is in contact with the capping portion 106a of the source/drain electrode 106. In some embodiments, the metal layer stack 128 is in direct contact with the active device 100a.

The contact layer 130 may include metal such as Pd, Ge, Ni, Ti, Pt, Au, Ag, other suitable material, or a combination thereof. The compensating layer 132 may include TiW, Ti, W, Au, TiWN, WN, an alloy thereof, or a combination thereof. The conductive layer 134 may include metal such as Au, Ag, Sn, an alloy thereof, silver conductive epoxy adhesive, or a combination thereof. In some embodiments, the metal stack 128 includes a compensating layer 132 made of TiW sandwiched between a contact layer 130 made of Pd and a conductive layer 134 made of Au. With the compensating layer 132 formed between the contact layer 130 and the conductive layer 134, the stress produced by the shielding structure 122 may be compensated for by the stress of the compensating layer 132. Therefore, wafer warpage may be prevented.

In some embodiments as shown in FIG. 1F, the ceiling layer 120 has a thickness 120H. The barrier structure 116 has a thickness 116H, the metal stack 128 has a thickness 128H, and the shielding structure 122 has a thickness 122H. The thickness 122H of the shielding structure 122 is the sum of the thickness 116H of the barrier structure 116 and the thickness 120H of the ceiling layer 120.

In some embodiments, the ratio of the thickness 128H of the metal stack 128 to the thickness 116H of the barrier structure 116 is in a range of about 2 to about 20. In some embodiments, the ratio of the thickness 128H of the metal stack 128 to the thickness 120H of the ceiling layer 120 is in a range of about 2 to about 20. In some embodiments, the ratio of the thickness 128H of the metal stack 128 to the total thickness 122H of the shielding structure 122 in a range of about 4 to about 40. If the metal stack 128 is too thick, the wafer warpage may be worse. If the metal stack 128 is too thin, there may be not enough stress to compensate the stress produced by the shielding structure 122.

FIG. 2 is a top view of a semiconductor chip 10a in accordance with some embodiments. In some embodiments as shown in FIG. 2, the ceiling layer 120 only covers the active devices 100a, and the barrier structure 116 formed over the passive devices 100b is exposed from the ceiling layer 120, which may reduce wafer warpage.

In some embodiments, the ratio of the area of the ceiling layer 120 to the area of the semiconductor chip 10a is in a range of about 2 to about 50. In some embodiments, the ratio of the area of the ceiling layer 120 to the area of the barrier structure 116 is in a range of about 2 to about 20. If the area of the ceiling layer 120 is too great, the wafer warpage issue may be worse. If the area of the ceiling layer 120 is too less, it may not protect the active devices 100a from moisture.

With the ceiling layer 120 of the shielding structure 122 has an opening 124 exposing the barrier structure 116 of the shielding structure 122 formed over the passive devices 100b, the wafer warpage may be reduced. The passivation layer 114 may be defined by using the ceiling layer 120 and the barrier structure 116 as a mask layer. In addition, with a compensating layer 132 located in the metal stack 128, the stress produced by the shielding structure 122 may be compensated for, and the issue of wafer warpage may be further improved.

Many variations and/or modifications may be made to the embodiments of the disclosure. FIGS. 3A-3D are cross-sectional representations of various stages of forming a semiconductor chip 10b in accordance with some embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions of these processes and devices are not repeated herein. The difference from the embodiments described above is that, as shown in FIG. 3A in accordance with some other embodiments, the barrier structure 116 of the shielding structure 122 includes a first barrier portion 116a and a third barrier portion 116c surrounding the active device 100a, and a second barrier portion 116b covering the passive device 108.

In some embodiments, the second barrier portion 116b and the third barrier portion 116c of the barrier structure 116 are separated from each other. An opening 138 is formed between the second barrier portion 116b and the third barrier portion 116c of the barrier structure 116. In some embodiments, the passivation layer 114 is exposed in the opening 138.

Next, the ceiling layer 120 is formed over the first barrier portion 116a and the third barrier portion 116c of the barrier structure 116, as shown in FIG. 3B in accordance with some other embodiments. In some embodiments, the ceiling layer 120 only partially covers the first barrier portion 116a and the third barrier portion 116c of the barrier structure 116. In some embodiments, the second barrier portion 116b is completely exposed from the ceiling layer 120. Since the area of the barrier structure 116 covered by the ceiling layer 120 is reduced, the wafer warpage may be reduced.

Afterwards, the passivation layer 114 exposed from the shielding structure 122 is removed by using the ceiling layer 120 and the barrier structure 116 as a mask layer, as shown in FIG. 3C in accordance with some embodiments. In some embodiments, the dielectric layer 110 formed between the third barrier portion 116c and the second barrier portion 116b is exposed after the passivation layer 114 is removed.

Afterwards, a metal stack 128 including a compensating layer 132 sandwiched between a contact layer 130 and a conductive layer 134 is formed under the substrate 102, as shown in FIG. 3D in accordance with some embodiments. The via structure 136 is formed in the substrate 102 connecting the source/drain electrodes 104. Processes and materials used to form the metal stack 128 and the via structure 136 may be similar to, or the same as, those used to form the metal stack 128 and the via structure 136 described in the previous embodiments, and are not repeated herein for brevity.

FIG. 4 is a top view of a semiconductor chip 10b in accordance with some embodiments. In some embodiments as shown in FIG. 4, the barrier structures 116 surrounding the active device 100a and the barrier structures 116 covering the passive device 100b are separated from each other. The ceiling layer 120 only covers the active devices 100a and a portion of the barrier structures 116 surrounding the active device 100a. The barrier structure 116 formed over the passive devices 100b is exposed. With less volume of the shielding structure 122 including the ceiling layer 120 and the barrier structure 116, the wafer warpage issue may be further improved.

With the ceiling layer 120 of the shielding structure 122 exposing the barrier structure 116 of the shielding structure 122 over the passive devices 100b, the wafer warpage may be reduced. The passivation layer 114 may be defined by using the ceiling layer 120 and the barrier structure as a mask layer. In addition, with a compensating layer 132 located in the metal stack 128, the stress produced by the shielding structure 122 may be compensated for, and the warpage issue may be further improved. The barrier structure 116 with an opening 138 formed between the active device 100a and the passive device 110b may further reduce wafer warpage.

Many variations and/or modifications may be made to the embodiments of the disclosure. FIGS. 5A-5D are cross-sectional representations of various stages of forming a semiconductor chip 10c in accordance with some embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions of these processes and devices are not repeated herein. The difference from the embodiments described above is that, as shown in FIG. 5A in accordance with some other embodiments, the passive device 100b is exposed and not covered by the barrier structure 116.

In some embodiments as shown in FIG. 5A, the barrier structure 116 includes a first barrier portion 116a and a third barrier portion 116c surrounding the active device 100a and exposing the passive device 100b. In some embodiments, the barrier structure 116 is separated from the passive device 100b.

Next, the ceiling layer 120 is formed over the first barrier portion 116a and the third barrier portion 116c of the barrier structure 116, as shown in FIG. 5B in accordance with some other embodiments. In some embodiments, the ceiling layer 120 only partially covers the first barrier portion 116a and the third barrier portion 116c of the barrier structure 116. Without the barrier structure 116 formed over the passive device 100b, the volume of the shielding structure 122 may be reduced, and the wafer warpage may be reduced.

Afterwards, the passivation layer 114 formed over the pad structure 100c is removed by a patterning process, as shown in FIG. 5C in accordance with some embodiments. The patterning process may include a photolithography process and etching process. The photolithography process may be performed by a mask layer. After the patterning process, the dielectric layer 110 and the second conductive portion 112b of the conductive pad 112 in the third region 102c may be exposed. The passivation layer 114 covering the passive device 100b in the second region 102b may also be exposed.

Afterwards, a metal stack 128 including a compensating layer 132 sandwiched between a contact layer 130 and a conductive layer 134 is formed under the substrate 102, as shown in FIG. 5D in accordance with some embodiments. The via structure 136 is formed in the substrate 102 connecting the source/drain electrodes 104. Processes and materials used to form the metal stack 128 and the via structure 136 may be similar to, or the same as, those used to form the metal stack 128 and the via structure 136 described in the previous embodiments, and are not repeated herein for brevity.

FIG. 6 is a top view of a semiconductor chip 10c in accordance with some embodiments. In some embodiments as shown in FIG. 6, the barrier structures 116 only surrounds the active device 100a and does not cover the passive device 100b. The ceiling layer 120 only covers the active devices 100a and a portion of the barrier structures 116 surrounding the active device 100a. With less volume of the shielding structure 122 including the ceiling layer 120 and the barrier structure 116, the wafer warpage may be further reduced.

With the ceiling layer 120 of the shielding structure 122 exposing the passive devices 100b, the wafer warpage may be reduced. The passivation layer 114 may be defined by a mask layer. In addition, with a compensating layer 132 located in the metal stack 128, the stress produced by the shielding structure 122 may be compensated for, and the wafer warpage may be reduced. With the barrier structure 116 only formed surrounding the active device 100a and exposing the passive device 100b and the pad structure 100c, the volume of the shielding structure 122 is further reduced, and the wafer warpage may be reduced.

Many variations and/or modifications may be made to the embodiments of the disclosure. FIGS. 7A-7D are cross-sectional representations of various stages of forming a semiconductor chip 10d in accordance with some embodiments. Some processes or devices are the same as, or similar to, those described in the embodiments above, and therefore the descriptions of these processes and devices are not repeated herein. The difference from the embodiments described above is that, as shown in FIG. 7A in accordance with some other embodiments, the barrier structure 116 further covers a portion of the pad structure 100c.

In some embodiments as shown in FIG. 7A, the barrier structure 116 is formed over the passive device 100b and the pad structure 100c. The pad structure 100c may be partially covered by the barrier structure 116. An opening 140 is formed in the barrier structure 116 exposing the pad structure 100c. In some embodiments, the passivation layer 114 covering the pad structure 100c is exposed in the opening 140. The barrier structure 116 covering the pad structure 100c may protect the pad structure 100c from moisture

Next, the ceiling layer 120 is formed over the barrier structure 116, as shown in FIG. 7B accordance with some other embodiments. In some embodiments, an opening 124 is formed in the ceiling layer 120 and the passive device 100b and the pad structure 100c is not covered by the ceiling layer 120. The barrier structure 116 covering the passive device 100b and the pad structure 100c is exposed. Compared to the case which the barrier structure 116 is completely covered by the ceiling layer 120, the area of the barrier structure 116 covered by the ceiling layer 120 is reduced, the wafer warpage may be reduced.

Afterwards, the passivation layer 114 exposed from the shielding structure 122 is removed by using the ceiling layer 120 and the barrier structure 116 as a mask layer, as shown in FIG. 7C in accordance with some embodiments. In some embodiments, the second conductive portion 112b of the conductive pad 112 is exposed from the opening 140 after the passivation layer 114 is removed.

Afterwards, a metal stack 128 including a compensating layer 132 sandwiched between a contact layer 130 and a conductive layer 134 is formed under the substrate 102, as shown in FIG. 7D in accordance with some embodiments. The via structure 136 is formed in the substrate 102 connecting the source/drain electrodes 104. Processes and materials used to form the metal stack 128 and the via structure 136 may be similar to, or the same as, those used to form the metal stack 128 and the via structure 136 described in the previous embodiments, and are not repeated herein for brevity.

FIG. 8 is a top view of a semiconductor chip 10d in accordance with some embodiments. In some embodiments as shown in FIG. 8, the ceiling layer 120 only covers the active devices 100a, and the barrier structure 116 formed over the passive devices 100b and the pad structure 100c is exposed, which may reduce wafer warpage compared to the case in which the ceiling layer 120 completely covers the barrier structure 116.

With the ceiling layer 120 of the shielding structure 122 has an opening 124 exposing the barrier structure 116 of the shielding structure 122 over the passive devices 100b, the wafer warpage may be reduced. The passivation layer 114 may be defined by using the ceiling layer 120 and the barrier structure 116 as a mask layer. In addition, with a compensating layer 132 located in the metal stack 128, the stress produced by the shielding structure 122 may be compensated for, and the wafer warpage may be further reduced. The pad structure 112 may be partially covered by the barrier structure 116, which may protect the pad structure 112 from moisture. The barrier structure 116 covering the pad structure 112 may be exposed to improve the wafer warpage issue.

As mentioned above, in the present disclosure, a semiconductor chip and a method of forming a semiconductor chip is provided. With the ceiling layer only partially covers the barrier structure in the shielding structure, the volume of the shielding structure may be reduced, and the wafer warpage issue may be improved. The passivation layer covering the devices is defined using the shielding structure as a mask layer. In addition, forming a back side metal stack layer with a compensating layer may also compensate the stress caused by the shielding structure.

It should be noted that although some of the benefits and effects are described in the embodiments above, not every embodiment needs to achieve all the benefits and effects.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

SEMICONDUCTOR CHIP

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