This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0100893 filed in the Korean Intellectual Property Office on Aug. 2, 2023, and to Korean Patent Application No. 10-2023-0108321, filed in the Korean Intellectual Property Office on Aug. 18, 2023, and the entire contents of the above-identified applications are incorporated by reference herein.
The present disclosure relates to semiconductor chips and to semiconductor packages including the same.
Semiconductor packages are packages of integrated circuit chips implemented in a form usable in electronic products. Typically, a semiconductor package is made by mounting semiconductor chips on a substrate such as printed circuit board (PCB). Semiconductor chips may be electrically coupled to the substrate through solder bumps and so on. During a mounting process, the solder bumps may have fluidity, which may cause adjacent solder bumps to come into contact with each other during the mounting process, resulting in short circuits.
The present disclosure attempts to provide a semiconductor chip having reduced defects and/or capable of preventing defects due to short circuits from occurring during a process of manufacturing a semiconductor package, and a semiconductor package including the same.
However, the effects of the embodiments of the present disclosure are not limited to the above-described object, and they can be variously expanded within the technical scope of the present disclosure.
A semiconductor chip according to some aspects may include: a main area; a first edge area that is positioned on an outer side of the main area in a first direction; main area chip pads arranged in the main area; and edge area chip pads arranged in the edge area. The edge area chip pads may be arranged such that first and second edge area chip pads immediately adjacent to each other in the first direction are spaced apart from each other in a direction intersecting the first direction.
A semiconductor chip according to some aspects may include a main area; a first edge area that is positioned on a first side of the main area in a first direction; and a second edge area that is positioned a second side of the main area that is opposite from the first side in the first direction; main area chip pads provided in the main area on a first line and a second line that extend in the first direction; and edge area chip pads provided in first and second edge areas. The edge area chip pads may be arranged such that two edge area chip pads immediately adjacent to each other in the first direction may be spaced apart from each other in a second direction intersecting the first direction.
A semiconductor package according to some aspects may include a substrate, a semiconductor chip on the substrate, and chip terminals that couple the semiconductor chip to the substrate. The semiconductor chip may include a main area; a first edge area that is positioned on an outer side of the main area in a first direction; main area chip pads arranged in the main area; and edge area chip pads arranged in the edge area. The edge area chip pads may be arranged such that first and second edge area chip pads immediately adjacent to each other in the first direction are spaced apart from each other in a direction intersecting the first direction.
According to some embodiments, it may be possible to prevent defects due to short circuits from occurring during a process of manufacturing a semiconductor package.
In the following detailed description, only certain embodiments of the present inventive concepts have been shown and described, simply by way of illustration. The present inventive concepts can be variously implemented and is not limited to the following embodiments.
The drawings and description are to be regarded as illustrative in nature and not restrictive. Like reference numerals designate like elements throughout the specification.
In addition, the size and thickness of each configuration shown in the drawings are arbitrarily shown for understanding and ease of description, but the present inventive concepts are not limited thereto. In the drawings, at least some of the thicknesses and/or dimensions of areas, layers, films, panels, regions, etc., may be exaggerated for clarity, understanding, and/or ease of description.
Further, it will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. Further, when an element is “on” a reference portion, the element is located above or below the reference portion, and it does not necessarily mean that the element is located “above” or “on” in a direction opposite to gravity.
In addition, unless explicitly described to the contrary, the word “comprise,”, and variations such as “comprises” or “comprising,” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.
Referring to
The substrate 10 may couple the semiconductor chip 20 and so on to an external component or device (not shown) outside the semiconductor package 1. The substrate 10 may be a printed circuit board, etc. The substrate 10 has a first surface 11 and a second surface 12 positioned in opposite directions so as to face each other. In
The substrate 10 may contain an insulating material. The insulating material may be a thermosetting resin such as epoxy resin, a thermoplastic resin such as polyimide, etc. Alternatively, the insulating material may be an impregnated reinforcement material, such as impregnated glass fiber or an impregnated inorganic filler. For example, as the insulating material, prepreg, Ajinomoto build-up film (ABF), FR-4, a bismaleimide triazine (BT) resin, and so on may be used. In the inner region of the substrate 10, wiring structures and so on may be provided, which are not shown in
A mounting pad 13 may be positioned on the first surface 11 of the substrate 10. The mounting pad 13 may expose at least some areas of wiring lines (reference numeral “13a” in
A connection pad 14 may be positioned on the second surface 12 of the substrate 10. The connection pad 14 may be exposed to the outer space of the substrate 10. The connection pad 14 may be formed of a conductive material. The connection pad 14 may be formed of a metallic material. For example, the connection pad 14 may be formed of copper (Cu), silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni), titanium (Ti), gold (Au), platinum (Pt), an alloy thereof, etc. A plurality of connection pads 14 may be provided. Each connection pad 14 may be coupled to a connection terminal 15. The connection terminal 15 may be a solder ball, etc., and may be attached to the connection pad 14.
The semiconductor chip 20 may be positioned on the first surface 11 of the substrate 10. The semiconductor chip 20 may be a memory chip, etc. For example, the semiconductor chip 20 may be a DRAM device, an SDRAM device, an RRAM device, a PRAM device, an MRAM device, or an STT-MRAM (Spin Transfer Torque MRAM) device, an EDP device, an FRAM device, a graphic DRAM device, a ReRAM device, etc. The semiconductor chip 20 may be coupled to the upper surface of the mounting pad 13. The semiconductor chip 20 may be mounted on the substrate 10 in a flip-chip manner. The semiconductor chip 20 may have a first surface 21 and a second surface 22 positioned in opposite directions so as to face each other. In
On the second surface 22 of the semiconductor chip 20, a chip pad 27 may be positioned. The chip pad 27 may be coupled to the mounting pad 13 by a chip terminal 30. The chip terminal 30 may be a solder bump, a solder ball, etc. Further, the chip terminal 30 may include a metal pillar structure.
The molding layer 40 may be formed on the first surface 11 of the substrate 10. The molding layer 40 may surround the outer side of the semiconductor chip 20. The molding layer 40 may protect the semiconductor chip 20 and so on from external impact, heat, and the like. The molding layer 40 may contain an insulating polymeric material such as an epoxy molding compound (EMC). The molding layer 40 may contain a thermosetting resin such as epoxy resin, a thermoplastic resin such as polyimide, or a thermosetting resin or a thermoplastic resin containing a reinforcement material such as a filler, etc. For example, the molding layer 40 may contain ABF (Ajinomoto Build-up Film), FR-4, BT (Bismaleimide Triazine) resin, etc.
Referring to
The direction in which the first edge 23 and the third edge 25 face each other may be referred to as a first direction X. The direction in which the second edge 24 and the fourth edge 26 face each other and which intersects the first direction X may be referred to as a second direction Y. The length of the semiconductor chip 20 in the first direction X and the length of the semiconductor chip in the second direction Y may be different. For example, the length of semiconductor chip 20 in the first direction X may be longer than the length of the semiconductor chip in the second direction Y.
The second surface 22 of the semiconductor chip 20 has a main area M and edge areas E1 and E2.
The main area M may be positioned at the center area of the second surface 22 of the semiconductor chip 20 in the first direction X.
The edge areas E1 and E2 may be positioned on the outer sides from the main area M in the first direction X. The edge areas E1 and E2 may be positioned on both sides of the main area M in the first direction X, respectively.
The edge areas E1 and E2 may include a first edge area E1 and a second edge area E2. The first edge area E1 is positioned between the main area M and the first edge 23 in the first direction X. The second edge area E2 is positioned between the main area M and the third edge 25 in the first direction X. In other words, the first edge 23 is positioned on the outer side of the first edge area E1 in the first direction X. The third edge 25 is positioned on the outer side of the second edge area E2 in the first direction X.
On the second surface 22 of the semiconductor chip 20, a plurality of chip pads 27 may be arranged. The chip pads 27 may be arranged along the first direction X. Two chip pads 27 may be arranged in the second direction Y so as to be spaced apart from each other. The chip pads 27 may be positioned in the center area in the second direction Y. On the second surface 22 of the semiconductor chip 20, a data pad area DQ and a command/address pad area CA are positioned. On the data pad area DQ, data pads may be arranged. The data pads receive and output data signals. On the command/address pad area CA, command/address pads may be arranged. The command/address pads receive and output command signals, such as data strobe signals, data mask signals, chip select signals, a clock signal, write enable signals, RAS signals, and CAS signals, and address signals.
The data pad area DQ may be positioned in the main area M. The command/address pad area CA may be positioned in the main area M.
At least one end of the data pad area DQ in the first direction X may be positioned at a boundary between the main area M and one of the edge areas E1 and E2. In
The length a of the first edge area E1 in the first direction X may be in a range of 6% or more and 10% or less (or a range between 6%-10%, inclusive) of the total length of the semiconductor chip 20 in the first direction X. In other words, of the lengths a and b in
The length of the second edge area E2 in the first direction X may be in a range 6% or more and 10% or less (or a range between 6%-10%, inclusive) of the total length of the semiconductor chip 20 in the first direction X. The length of the second edge area E2 may correspond to the length of the first edge area E1. In other words, within an error range which may occur in the manufacturing process, the length of the second edge area E2 may be regarded as being the same as or equal to the length of the first edge area E1.
On the edge areas E1 and E2, power pads, control pads, and so on, such as e.g., VDD pads, VSS pads, VPP pads, ZQ pads, ODT pads, and the like may be arranged.
Referring to
In
The first edge area E1, the second edge area E2, and the main area M may be identical to or similar to those described with reference to
Further, the length of the second edge area E2 in the first direction X may be in a range 6% or more and 10% or less of the total length of the semiconductor chip 20 in the first direction X. The length of the second edge area E2 may correspond to the length of the first edge area E1. In other words, within an error range which may occur in the manufacturing process, the length of the second edge area E2 may be regarded as being the same as or equal to the length of the first edge area E1.
In
Referring to
The main area chip pads 270 may be arranged on the main area M. The main area chip pads 270 may be arranged in two lines (e.g., first and second lines) along the first direction X. The first and second lines in which the main area chip pads 270 are arranged may be positioned so as to be spaced apart from each other by a preset distance in the second direction Y. The main area chip pads 270 on the first of the two lines and the main area chip pads 270 on the second line of the two lines may be positioned so as to face each other in the second direction Y.
The edge area chip pads 271 may be provided on the edge areas E1 and E2, e.g., on the first edge area E1 and the second edge area E2. The edge area chip pads 271 may be provided or arranged in a zigzag manner with respect to the first direction X. In other words, the edge area chip pads 271 are disposed such that two edge area chip pads adjacent to each other with a shortest distance in the first direction X (that is, immediately adjacent to each other) may be spaced apart from each other in the second direction Y.
The boundaries of the edge areas E1 and E2 and the main area M may pass through ends positioned closer to the edge areas E1 and E2 among the ends of main area chip pads that are closest to the edge areas E1 and E2 among the main area chip pads 270. In other words, the length of the first edge area E1 may be the distance between the first edge 23 and the main area chip pad that is positioned closest to the first edge area E1 among the main area chip pads 270. Similarly, the length of the second edge area E2 may be the distance between the third edge 25 and the main area chip pad that is positioned closest to the second edge area E2 among the main area chip pads 270.
Referring to
Referring to
The first line L1 and the second line L2 may extend in the first direction X. The first line L1 and the second line L2 may be positioned in the center area of the second surface 22 of the semiconductor chip 20 in the second direction Y. The first line L1 and the second line L2 may be positioned so as to be spaced apart from each other in the second direction Y. The main area chip pads 270 may be arranged on the first line L1 and the second line L2. The main area chip pads 270 on the first line L1 and the second line L2 may be arranged so as to face or overlap each other in the second direction Y. The distances between the main area chip pads 270 that are arranged on the first line L1 and spaced apart from each other (in the first direction X) may correspond to the distances between the main area chip pads 270 arranged on the second line L2 and spaced apart from each other (in the first direction X).
The edge area chip pads 271 may be arranged on the first line L1, the second line L2, a third line L3, and a fourth line LA. The lines L3 and L4 on which the edge area chip pads 271 are arranged may be positioned so as to be closer to one of the first line L1 and the second line L2 than to the other.
The third line L3 and the fourth line L4 may extend in the first direction X. The third line L3 may be positioned on the opposite side of the first line L1 with respect to the second line L2. In the second direction Y, the distance between the third line L3 and the first line L1 may be shorter than the distance between the first line L1 and the second line L2.
The fourth line L4 is positioned on the opposite side of the second line L2 with respect to the first line L1. In the second direction Y, the distance between the fourth line L4 and the second line L2 may be shorter than the distance between the first line L1 and the second line L2. The distance between the fourth line L4 and the second line L2 may correspond to or equal the distance between the third line L3 and the first line L1.
The edge area chip pads 271 may be alternately arranged on the first line L1 and the third line L3 along the first direction X. Further, the edge area chip pads 271 may be alternately arranged on the second line L2 and the fourth line L4 along the first direction X.
Among the edge area chip pads 271, two edge area chip pads 271 closest to the main area M may be provided on the third line L3 and the fourth line L4, respectively.
The distance BPd in the first direction X by which the center areas of two edge area chip pads 271 adjacent to each other in a direction oblique to the first direction X and the second direction Y are spaced apart from each other (that is, two edge area chip pads immediately adjacent to each other) may be in a range between 25 μm and 65 μm, inclusive. In other words, the distance BPd in the first direction X by which the center areas of two edge area chip pads 271 on the first line L1 and the third line L3 are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive. The distance BPd in the first direction X by which the center areas of two edge area chip pads 271 on the second line L2 and the fourth line L4 are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive.
The distance d between two edge area chip pads 271 adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm. In this case, the distance d between two edge area chip pads 271 may be the shortest distance between the outer ends of one of the two edge area chip pads 271 and the outer ends of the other. In other words, the distance d between two edge area chip pads 271 on the first line L1 and the third line L3 so as to be adjacent to each other may be equal to or greater than 30 μm. Further, the distance d between two edge area chip pads 271 on the second line L2 and the fourth line L4 so as to be adjacent to each other may be equal to or greater than 30 μm.
Referring to
The state of the chip pads 27 as viewed in a direction toward the first surface 11 of the substrate 10 is shown. Further, for ease of illustration, portions of the semiconductor chip 20 other than the edge area chip pads 271 are not shown.
Referring to
Accordingly, it may be possible to prevent short circuiting of the chip terminals 30 from occurring between two edge area chip pads 271 facing each other in the first direction X.
Further, as described above, the distance d between two edge area chip pads 271 adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm. Accordingly, it may be possible to prevent short-circuiting of the chip terminals 30 from occurring between two edge area chip pads 271 disposed adjacent to each other in a direction oblique to the first direction X and the second direction Y.
Specifically, the thermal expansion coefficients of the semiconductor chip 20 and the substrate 10 may be different as their materials are different. Accordingly, in the process of mounting the semiconductor chip 20 on the substrate 10, warpage of the substrate 10 and the semiconductor chip 20 may occur. The warpage may cause skewing of the chip terminals 30 having fluidity, resulting in short-circuiting between the chip terminals 30. Particularly, warpage and short-circuiting between the chip terminals 30 as described above may occur mainly in the edge areas of the semiconductor chip 20 adjacent to the side surface.
However, in the semiconductor chip 20 according to the above-described embodiments, sufficient distances may be secured between the edge area chip pads 271, and short-circuiting between the chip terminals 30 is prevented.
Referring to
The edge area chip pads 271a may be on the first line L1a, the second line L2a, a third line L3a, and a fourth line L4a
The lines L3a and L4a on which the edge area chip pads 271a are arranged may be positioned so as to be closer to one of the first line L1a and the second line L2a than to the other.
The third line L3a and the fourth line L4a may extend in the first direction X. At least one of the third line L3a and the fourth line LAa may be positioned between the first line L1a and the second line L2a. In
In the second direction Y, the distance between the third line L3a and the first line L1a may be shorter than the distance between the first line L1a and the second line L2a.
In the second direction Y, the distance between the fourth line LAa and the second line L2a may be shorter than the distance between the first line L1a and the second line L2a. The distance between the second line L2a and the fourth line L4a may correspond to or equal the distance between the first line L1a and the third line L3a.
The edge area chip pads 271a may be alternately arranged on the first line L1a and the third line L3a along the first direction X. Further, the edge area chip pads 271a may be alternately arranged on the second line L2a and the fourth line LAa along the first direction X.
Among the edge area chip pads 271a, two edge area chip pads 271a closest to the main area M may be on the third line L3a and the fourth line L4a, respectively.
The distance BPd in the first direction X by which the center areas of two edge area chip pads 271a that are adjacent to each other in a direction oblique to the first direction X and the second direction Y (that is, two edge area chip pads 271a immediately adjacent to each other) are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive. In other words, the distance BPd in the first direction X by which the center areas of two edge area chip pads 271a arranged on the first line L1a and the third line L3a so as to be adjacent to each other are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive. Further, the distance BPd in the first direction X by which the center areas of two edge area chip pads 271a are arranged on the second line L2a and the fourth line L4a so as to be adjacent to each other are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive.
The distance between two edge area chip pads 271a adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm. In this case, the distance between two edge area chip pads 271a may be the shortest distance between the outer ends of one of the two edge area chip pads 271a and the outer ends of the other. In other words, the distance between two edge area chip pads 271a on the first line L1a and the third line L3a so as to be adjacent to each other may be equal to or greater than 30 μm. Further, the distance between two edge area chip pads 271a on the second line L2a and the fourth line L4a so as to be adjacent to each other may be equal to or greater than 30 μm.
Referring to
The edge area chip pads 271b may be on the first line L1b, the second line L2b, a third line L3b, a fourth line L4b, a fifth line L5b, and a sixth line L6b.
The lines L3b, L4b, L5b, and L6b on which the edge area chip pads 271b are arranged may be positioned so as to be closer to one of the first line L1a and the second line L2a than to the other.
The third line L3b, the fourth line L4, the fifth line L5b, and the sixth line L6b may extend in the first direction X.
The third line L3b may be positioned on the opposite side of the first line L1b with respect to the second line L2b. In the second direction Y, the distance between the third line L3b and the first line L1b may be shorter than the distance between the first line L1b and the second line L2b.
The fourth line L4b may be positioned between the first line L1b and the second line L2b. In the second direction Y, the distance between the fourth line L4b and the first line Lib may be shorter than the distance between the fourth line L4b and the second line L2b. The distance between the fourth line L4b and the first line L1b may correspond to the distance between the third line L3b and the first line L1b.
The fifth line L5b may be positioned on the opposite side of the second line L2b with respect to the first line L1b. In the second direction Y, the distance between the fifth line L5b and the second line L2b may be shorter than the distance between the first line L1b and the second line L2b. The distance between the fifth line L5b and the second line L2b may correspond to the distance between the third line L3b and the first line L1b.
The sixth line L6b may be positioned between the first line L1b and the second line L2b. In the second direction Y, the distance between the sixth line L6b and the second line L2b may be shorter than the distance between the sixth line L6b and the first line L1b. The distance between the sixth line L6b and the second line L2b may correspond to the distance between the fifth line L5b and the second line L2b.
The edge area chip pads 271b may be alternately arranged on at least two of the first line L1b, the third line L3b, and the fourth line L4b along the first direction X. In some embodiments, the edge area chip pads 271b may be arranged on all of the first line L1b, the third line L3b, and the fourth line L4b along the first direction X.
Further, the edge area chip pads 271b may be alternately arranged on at least two of the second line L2b, the fifth line L5b, and the sixth line L6b along the first direction X. In some embodiments, the edge area chip pads 271b may be arranged on all of the second line L2b, the fifth line L5b, and the sixth line L6b along the first direction X
Among the edge area chip pads 271b, two edge area chip pads 271b closest to the main area M may be on one of the third line L3b and the fourth line L4b and one of the fifth line L5b and the sixth line L6b, respectively.
The distance in the first direction X by which the center areas of two edge area chip pads 271b adjacent to each other in a direction oblique to the first direction X and the second direction Y are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive. In other words, the distance in the first direction X by which the center areas of two edge area chip pads 271b on two of the first line L1b, the third line L3b, and the fourth line L4b, respectively, so as to be adjacent to each other in a direction oblique to the first direction X and the second direction Y are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive.
Further, the distance in the first direction X by which the center areas of two edge area chip pads 271b on two of the second line L2b, the fifth line L5b, and the sixth line L6b, respectively, so as to be adjacent to each other in a direction oblique to the first direction X and the second direction Y are spaced apart from each other may be in a range between 25 μm and 65 μm, inclusive.
The distance between two edge area chip pads 271b adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm. In this case, the distance between two edge area chip pads 271b may be the shortest distance between the outer ends of one of the two edge area chip pads 271b and the outer ends of the other.
In other words, the distance between two edge area chip pads 271b on two of the first line L1b, the third line L3b, and the fourth line L4b, respectively, so as to be adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm. Further, the distance between two edge area chip pads 271b disposed on two of the second line L2b, the fifth line L5b, and the sixth line L6b, respectively, so as to be adjacent to each other in a direction oblique to the first direction X and the second direction Y may be equal to or greater than 30 μm.
Referring to
Further, the shorter length of the distance between the data pad area DQc and the first edge 23 and the distance between the data pad area DQc and the third edge 25 may be longer than the length of an edge area Ec in the first direction X.
Accordingly, between the boundary of the main area Mc and an edge area Ec and the data pad area DQc, at least one main area chip pad 270c may be positioned.
Further, the shorter length of the distance between the data pad area DQc and the first edge 23 and the distance between the data pad area DQc and the third edge 25 may be 10% or more of the total length of the semiconductor chip 20c in the first direction X. The length of an edge area Ec in the first direction X may be in a range between 6% and 10%, inclusive of the total length of the semiconductor chip 20c in the first direction X. Preferably, the length of an edge area Ec in the first direction X may be in a range between 9% 10%, inclusive or less of the total length of the semiconductor chip 20c in the first direction X.
The arrangement of the main area chip pads 270c on the main area Mc and the arrangement of edge area chip pads 271c on the edge areas Ec are identical or similar to those described above with reference to
Further, the criteria for the boundaries of the edge areas Ec and the main area Mc are identical or similar to those described above with reference to
Referring to
In other words, at least one of both ends of the data pad area DQd in the first direction X may be positioned inside an edge area Ed.
Further, as described above with reference to
Accordingly, at least one of the boundaries of the main area Md and the edge areas Ed may cross the data pad area DQd. Further, the shorter length a5 of the distance between the data pad area DQd and the first edge 23 and the distance between the data pad area DQd and the third edge 25 may be 6% or less of the total length of the semiconductor chip 20d in the first direction X. As an example, the length of an edge area Ed in the first direction X may be in a range between 6% and 7%, inclusive, of the total length of the semiconductor chip 20d in the first direction X.
The arrangement of the main area chip pads 270d on the main area Md and the arrangement of edge area chip pads 271d on the edge areas Ed may be identical or similar to those described above with reference to
Further, the criteria for the boundaries of the edge areas Ed and the main area Md are identical or similar to those described above with reference to
Referring to
The substrate 50 may be identical or similar to the substrate 10 in
Among the plurality of semiconductor chips 60, the semiconductor chips 60 other than the uppermost semiconductor chip 60 may include upper chip pads 61 and lower chip pads 62. Further, the uppermost semiconductor chip 60 may include lower chip pads 62. Among the plurality of semiconductor chips 60, the semiconductor chips 60 other than the uppermost semiconductor chip 60 may include through-hole vias 63 which may couple the upper chip pads 61 and the lower chip pads 62. Further, chip terminals 67 may be coupled to the lower chip pads 62 of the semiconductor chips 60. Accordingly, the semiconductor chips 60 may be coupled to the lower semiconductor chips 60 or the substrate 50 by the lower chip pads 62 and the chip terminals 67.
The lower chip pads 62 of the semiconductor chips 60 may have the structures of the chip pads 27, 270a, 271a, 270b, 271b, 270c, 271c, 270d, and 271d described above with reference to
Further, the upper chip pads 61 of the semiconductor chips 60 may have the structures of the chip pads 27, 270a, 271a, 270b, 271b, 270c, 271c, 270d, and 271d described above with reference to
The molding layer 70 may surround the outer side of the semiconductor chip 60. The molding layer 70 may be identical or similar to the molding layer 40 in
While the inventive concepts disclosed herein have been described in connection with what is some examples of embodiments, it is to be understood that the inventive concepts are not limited to the disclosed embodiments. On the contrary, it is intended that the present disclosure covers various modifications and equivalent arrangements included within the scope of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
10-2023-0100893 | Aug 2023 | KR | national |
10-2023-0108321 | Aug 2023 | KR | national |