The present invention generally relates to a semiconductor device and a manufacturing method thereof. More particularly, the present invention relates to a semiconductor device having a multilayer interconnect structure, and a manufacturing method thereof.
With recent reduction in size of semiconductor integrated circuit elements, the gap between a plurality of elements of a semiconductor device, and the gap between interconnects connecting the elements to each other have been increasingly reduced. This has caused problems of increasing the capacitance between adjacent interconnects, and thus, reducing a signal transmission speed.
Thus, a method of reducing the capacitance between interconnects by forming a void (an air gap) between adjacent interconnects has been examined, as shown in “A Novel SiO2-Air Gap low-k Copper Dual Damascene Interconnect,” T Micro electronics, V. Arnal et al., p. 71, 2000, Advance Metallization, and United States Published Patent Application No. 2004/0061231.
A manufacturing method of a semiconductor device as a first conventional example, which is shown in “A Novel SiO2-Air Gap low-k Copper Dual Damascene Interconnect,” T Micro electronics, V. Arnal et al., p. 71, 2000, Advance Metallization, will be described below with reference to
First, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, a second insulating film, which has a low coverage ratio and a low embedding property, is deposited over the liner insulating film 13 so as not to embed the voids 15, whereby closed voids 15 are formed.
A multilayer interconnect structure having an arbitrary number of layers is obtained by sequentially repeating the above steps.
In the semiconductor device having multilayer interconnects, providing the air gaps 15 between the copper interconnects 12 in this manner can reduce the capacitance between adjacent interconnects 12.
On the other hand, United States Published Patent Application No. 2004/0061231 describes a semiconductor device shown in
However, the semiconductor devices having a multilayer interconnect structure according to the above first and second conventional examples have the following problems.
Problems of the first conventional example will be described below with reference to
First, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, a second insulating film, which has a low coverage ratio and a low embedding property, is deposited over the liner insulating film 7 so as not to embed the voids 3, whereby closed voids 3 are formed.
A multilayer interconnect structure having an arbitrary number of layers is obtained by sequentially repeating the above steps.
In the semiconductor device having multilayer interconnects, providing the air gaps 3 between the copper interconnects 5 in this manner can reduce the capacitance between adjacent interconnects 5.
In the first conventional example, in the step shown in
Moreover, as shown in
As can be seen also from
Moreover, in the second conventional example, voids are formed not only between the interconnects, but also around the vias and the dummy vias, causing a problem of reduced mechanical strength.
Note that the present invention need not necessarily solve all the problems described above, but need only solve at least one of these problems.
In view of the above problems, it is an object of the present invention to achieve a high yield, to sufficiently reduce the capacitance between interconnects, and to obtain sufficient mechanical strength.
Note that the present invention need not necessarily achieve all the objects described above, but need only achieve at least one of these objects.
In order to achieve the above objects, according to the present invention, an interconnect structure of a semiconductor device is configured so that a dummy via is formed under an interconnect which has a void to be formed on both sides, and the dummy via is connected to the interconnect.
More specifically, a semiconductor device according to the present invention includes: an insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the insulating film; a via formed in the insulating film so as to connect to at least one of the plurality of interconnects; and a dummy via formed in the insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the insulating film with no void interposed therebetween.
According to the present invention, the semiconductor device includes a dummy via formed in the insulating film so as to connect to at least one of the plurality of interconnects, a void is selectively formed between adjacent ones of the interconnects in the insulating film, the dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect, and the via and the dummy via are surrounded by the insulating film with no void interposed therebetween. That is, the dummy via, formed under the interconnect which is in contact with the void, so as to connect to the interconnect, is directly surrounded by the insulating film. Because of the dummy via, a portion in the insulating film, which is located under the interconnect in contact with the void, is not recessed when forming the void. As a result, the interconnect, which is in contact with the void on its both surfaces, can be prevented from peeling off from the insulating film. Moreover, since the via and the dummy via are surrounded by the insulating film with no void interposed therebetween, a semiconductor device, having high mechanical strength and low capacitance between interconnects, can be obtained.
In the semiconductor device of the present invention, it is preferable that a height of a bottom surface of the void from the semiconductor substrate be lower than, or equal to, that of a bottom surface of the interconnect which is in contact with the void.
In the semiconductor device of the present invention, it is preferable that a width of the interconnect which is in contact with the void be larger than that of an interconnect which is not in contact with the void.
In the semiconductor device of the present invention, it is preferable that the interconnect which is in contact with the void have its peripheral surface entirely in contact with the void.
Moreover, in the semiconductor device of the present invention, it is preferable that the interconnect which is in contact with the void have its peripheral surface discontinuously in contact with the void.
In the semiconductor device of the present invention, it is preferable that the dummy via be formed so as to connect to an interconnect having a smallest interconnect width among the plurality of interconnects.
In the semiconductor device of the present invention, it is preferable that multiple ones of the dummy via be formed in one of the plurality of interconnects.
In the semiconductor device of the present invention, it is preferable that the dummy via be formed between two of the via, which are formed spaced apart from each other in one of the plurality of interconnects, so as to have a length substantially corresponding to a gap between the two of the via along the one interconnect.
In the semiconductor device of the present invention, it is preferable that the plurality of interconnects have a bent portion which is bent in a direction parallel to the semiconductor substrate, and that the dummy via be formed so as to connect to the bent portion.
In the semiconductor device of the present invention, it is preferable that a lower-layer insulating film be formed under the dummy via, and that the dummy via be connected to the lower-layer insulating film.
In the semiconductor device of the present invention, it is preferable that a concavo-convex portion be formed on a side surface of the dummy via, and that a level of concaves and convexes of the concavo-convex portion of the dummy via be larger than that of concaves and convexes of a concavo-convex portion formed on a side surface of the via.
In the semiconductor device of the present invention, it is preferable that the dummy via have a larger diameter in its lower end than in its upper end.
In the semiconductor device of the present invention, it is preferable that the insulating film be a SiOC film.
In the semiconductor device of the present invention, it is preferable that the insulating film be a laminated film of a first insulating film and a second insulating film, that the dummy via and the via be formed in the first insulating film, and that the interconnects be formed in the second insulating film.
In this case, it is preferable that the first insulating film be an insulating film having higher mechanical strength than that of the second insulating film.
Moreover, in this case, it is preferable that the first insulating film be an insulating film having a lower pore ratio than that of the second insulating film.
Moreover, in this case, it is preferable that the second insulating film be a SiOC film.
Moreover, it is preferable that the first insulating film be a film containing silicon oxide, or a film containing silicon nitride.
In the semiconductor device of the present invention, it is preferable that the via be connected to an interconnect which is not in contact with the void, among the plurality of interconnects.
It is preferable that the semiconductor device of the present invention further include a liner film formed over the insulating film so as to be in contact with the insulating film, for preventing diffusion of a metal of the interconnects.
In this case, it is preferable that the liner film be a film containing SiCN.
It is preferable that the semiconductor device of the present invention further include a cap film formed on the plurality of interconnects so as to be in contact with the interconnects, for preventing current leakage from the interconnects.
In this case, it is preferable that the cap film be made of Co, Mn, W, Ta, or Ru, or an alloy containing at least one kind of a metal selected from Co, Mn, W, Ta, and Ru, or an oxide of Co, Mn, W, Ta, or Ru, or CuSiN, and that the cap film have a conductive property.
A method for manufacturing a semiconductor device includes the steps of: (a) forming a first insulating film over a semiconductor substrate; (b) forming a dummy via hole, a via hole, and a plurality of interconnect grooves connecting to the dummy via hole and the via hole, in the first insulating film; (c) embedding a conductive film in the plurality of interconnect grooves, the via hole, and the dummy via hole to form a plurality of interconnects, a via, and a dummy via from the conductive film; (d) selectively removing a region between the interconnects in the first insulating film to form a void between the interconnects; and (e) forming a second insulating film over the first insulating film so as to cover the plurality of interconnects and the void. The dummy via is formed so as to connect to an interconnect which is in contact with the void, and the via and the dummy via are surrounded by the first insulating film with no void interposed therebetween.
According to the manufacturing method of the semiconductor device of the present invention, the dummy via is formed so as to connect only to an interconnect which is in contact with the void, and the via and the dummy via are surrounded by the first insulating film with no void interposed therebetween. Because of the dummy via, a portion in the insulating film, which is located under the interconnect in contact with the void, is not recessed when forming the void. As a result, the interconnect, which is in contact with the void on its both surfaces, can be prevented from peeling off from the insulating film. Moreover, since the via and the dummy via are surrounded by the insulating film, a semiconductor device, having high mechanical strength and low capacitance between interconnects, can be obtained.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (d), the void be formed so that a height of a bottom surface of the void from the semiconductor substrate becomes lower than that of bottom surfaces of the interconnects.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (d), the interconnects be formed so that a width of the interconnect which is in contact with the void is larger than that of an interconnect which is not in contact with the void.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (d), the void be formed entirely around an interconnect for which the void is to be formed.
Moreover, in the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (d), the void be formed discontinuously around an interconnect for which the void is to be formed.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (c), the dummy via be formed so as to connect to an interconnect having a smallest interconnect width among the plurality of interconnects.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (c), multiple ones of the dummy via be formed in one of the plurality of interconnects.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (c), the dummy via is formed between two of the via, which are formed spaced apart from each other in one of the plurality of interconnects, so as to have a length substantially corresponding to a gap between the two of the via along the one interconnect.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (c), the dummy via be formed so as to connect to a bent portion of the interconnects, which is bent in a direction parallel to the semiconductor substrate.
In the manufacturing method of the semiconductor device of the present invention, it is preferable that, in the step (b), the dummy via hole be formed by an isotropic etching process.
In the semiconductor device and the manufacturing method thereof according to the present invention, a dummy via is formed under an interconnect which is in contact with a void, so as to connect to the interconnect. This can prevent the interconnect from peeling off from an insulating film, and also, can provide a semiconductor device having high mechanical strength and low capacitance between the interconnects.
A first example embodiment will be described with reference to the accompanying drawings.
As shown in
A second interlayer insulating film 115, having interconnects 105 and vias 113 formed therein, is formed over the first interlayer insulating film 101 with a liner insulating film 107 interposed therebetween. The liner insulating film 107 is formed in order to prevent diffusion of Cu atoms of the interconnects 105, 105A, and for example, SiCN can be used as the linear insulating film 107.
As a feature of the present disclosure, a dummy via 106 is formed under each interconnect 105A having a void 109 formed around its entire periphery, and a dummy via 106 is formed also under a bent portion 105b of each interconnect 105 having the bent portion 105b and having a void 109 formed around the bent portion 105b. A lower end of each dummy via 106 is not connected to an interconnect in a lower layer, but is terminated at an intermediate position in the first interlayer insulating film 101 or the liner insulating film 107. In other words, the lower end of each dummy via 106 is in contact with the insulating film. However, the dummy vias 106 may be connected to any interconnects which do not form a circuit, such as dummy lower-layer interconnects (dummy interconnects). The term “dummy via” herein refers to a via which does not form a circuit.
As shown in
However, since the dummy via 106 is formed under the interconnect 105A whose side surfaces are mostly in contact with the void 109, no damage layer 101A is formed in the portion where the dummy via 106 is formed.
Moreover, since the dummy via 106 is formed under the interconnect 105A, the damage layer 101A is not recessed in the region where the dummy via 106 is formed, as compared to the case where no dummy via 106 is formed under the interconnect 105A. In addition, the dummy via 106 is structured like a stake driven into the first interlayer insulating film 101. Thus, friction is generated between the dummy via 106 and the first interlayer insulating film 101 even if the width of a portion where no dummy via 106 is formed in the interconnect 105A is small, and the damage layer 101A has been recessed to some degree.
For the above two reasons, the interconnect 105A, whose periphery is almost entirely in contact with the void 109, is less likely to peel off from the first interlayer insulating film 101. Moreover, the voids 109 are formed so that the height of the bottom surfaces of the voids 109 from the semiconductor substrate is equal to, or lower than, that of the bottom surfaces of the interconnects 105, 105A. Thus, the capacitance between the interconnects 105, 105A is further reduced especially when the bottom surfaces of the voids 109 are located lower than the bottom surfaces of the interconnects 105, 105A.
Moreover, in the first interlayer insulating film 101, no void 109 is formed in the regions where the via 113 and the dummy via 106 are formed (however, there exists a portion partially etched by forming the void 109), and in the regions where the gap between the interconnects 105 is relatively large. This ensures the mechanical strength of the first interlayer insulating film 101.
Moreover, as shown in
Thus, forming the dummy via 106 in the shape shown in
As described above, the portion under the interconnect 105 in the first interlayer insulating film 101 tends to be recessed to a larger degree in the bent portion 105b of the interconnect 105. Thus, providing the dummy via 106 in the bent portion 105b of the interconnect 105, as described in the first example embodiment, can more reliably prevent the interconnect 105 having the bent portion 105b from peeling off from the first interlayer insulating film 101.
Moreover, it is preferable that the interconnect 105A, having a void 109 formed entirely around its periphery, have a large interconnect width. That is, it is preferable that the interconnect 105A, which has a void 109 formed entirely around its periphery, have a larger interconnect width than that of the interconnect 105, which has no void 109 formed around the most part of its periphery. Increasing the interconnect width to a relatively large value can prevent the portion under the interconnect 105A in the first interlayer insulating film 101 from being recessed when forming the void 109 entirely around the periphery of the interconnect 105A. This can more reliably prevent the interconnect 105A from peeling off from the first interlayer insulating film 101.
The above description applies also to a second example embodiment described below.
A manufacturing method of the semiconductor device according to the first example embodiment will be described below with reference to
First, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Interconnects 105 and a via 113 are formed in the second interlayer insulating film 115 by the above steps. It should be understood that, although not shown in the figures, it is desirable to form a dummy via under each interconnect, for which a void is to be formed on the most part of its side surfaces in a later step.
A multilayer interconnect structure having an arbitrary number of layers can be formed by sequentially repeating the steps described above.
According to the manufacturing method of the semiconductor device of the first example embodiment, even if the damage layer 101A is formed at the bottoms of the interconnect grooves 101a during formation of the interconnect grooves 101a in
More specifically, since the dummy via 106 is formed under the interconnect 105A, for which the void 109 is to be formed on the most part of its side surfaces, no damage layer 101A is formed in the region where the dummy via 106 is formed. Moreover, since the dummy via 106 is structured like a stake driven in the first interlayer insulating film 101, the friction between the dummy via 106 and the first interlayer insulating film 101 can prevent the interconnect 105A from peeling off from the first interlayer insulating film 101.
Moreover, since the voids 109 are formed so that the height of the bottom surfaces of the voids 109 becomes lower than that of the bottom surfaces of the interconnects 105, 105A which are in contact with the voids, the capacitance between the interconnects 105, 105A is further reduced.
Note that the manufacturing method of the semiconductor device of the first example embodiment was described with respect to a method of forming the interconnects 105, 105A, the via 113, and the dummy via 106 by a dual damascene method. However, the interconnects 105, 105A, the via 113, and the dummy via 106 may be formed by a damascene method, instead of the dual damascene method.
Moreover, although a conductive film, made of copper, was used as the dummy via 106, other conductive films may be used instead of copper. Examples of other conductive films include Al, Ag, Au, W, Ti, Ta, Mn, Sn, In, Co, Ni, Fe, and the like.
In the case where the dummy via 106 is formed by a damascene method, an insulating film, which has a high adhesion property to an interlayer insulating film in which the dummy via 106 is to be formed (i.e., which has large frictional force with the interlayer insulating film), can be used for the dummy via 106. In this case, an insulating film having a higher adhesion property to the interlayer insulating film is more desirable. An example of an insulating film having a high adhesion property to the dummy via 106 includes a nitride film such as SiN or SiCN. Insulating films made of these nitrides have an effect of having a higher adhesion property to the interconnects 105, 105A than that of a low-k (low dielectric constant) film, in addition to an effect of functioning as a layer for preventing copper diffusion from the interconnects 105, 105A.
As described in the modifications of the first example embodiment, forming a plurality of dummy vias 106 under a single interconnect 105A, forming a long dummy via 106 along the bottom surface of an interconnect 105A, forming a tall dummy via 106 (so as to be in contact with an interconnect in a lower layer), modifying the shape of the side surface of a dummy interconnect in the manner shown in
Especially, a dummy via 106, whose side surface has a concavo-convex shape as shown in
As described above, in the semiconductor device having a multilayer interconnect structure, in which the voids 109 are formed between the copper interconnects 105, 105A, providing the voids 109 between the copper interconnects 105, 105A can improve the yield of semiconductor devices capable of reducing the capacitance between adjacent interconnects.
A second example embodiment will be described below with reference to the drawings.
The semiconductor device of the second example embodiment is different from that of the first example embodiment in that an interlayer insulating film of a level at which a dummy via 106 is formed, and an interlayer insulating film of a level at which an interconnect 105A connecting to the dummy via 106 is formed, are made of different insulating films from each other.
It is herein assumed that, as shown in
Moreover, it is preferable to use an insulating film having a small amount of pores and having high mechanical strength, as the third interlayer insulating film 117. In this case, a damage layer 101A is less likely to be formed at the bottom of the interconnect grooves 101a, and even if the damage layer 101A is formed, large friction between the dummy via 106 and the third interlayer insulating film 117 can more reliably prevent the interconnect 105A from peeling off from the third interlayer insulating film 117, as compared to the first example embodiment.
It is desirable to use an insulating film having a relatively low dielectric constant, for example, a SiOC film having pores introduced therein, or an organic insulating film, such as SiLK (registered trademark), FLARE (registered trademark), FSG, polyimide, or benzo-cyclo-butene (BCB), or fluoro-hydrocarbon, or the like, as the fourth insulating film 118. However, the present disclosure is not limited to these insulating materials.
For example, a SiO2 film or the like can be used as the third interlayer insulating film 117. However, the present disclosure is not limited to the SiO2 film.
The third interlayer insulating film 117, in which the dummy via 106 is formed, and the fourth interlayer insulating film 118, in which an interconnect 105A connected to the dummy via 106 is formed, are not limited to the above two-layer structure, but may have a multilayer structure of three or more layers. For example, an optimal multilayer interconnect structure can be selected by considering both the mechanical strength in the interconnect structure and reduction in capacitance between interconnects.
A manufacturing method of the semiconductor device according to the second example embodiment will be described below with reference to
First, as shown in
Then, as shown in
Then, as shown in
Then, as shown in
Then, the steps similar to those of
A multilayer interconnect structure having an arbitrary number of layers is formed by sequentially repeating the steps described above.
The effects described above can be obtained by using insulating films having different compositions from each other, as the third interlayer insulating film 117 of a level at which the dummy via 106 is formed, and the fourth interlayer insulating film 118 of a level at which the interconnect 105A connected to the dummy via 106 is formed.
Moreover, as described above, the interlayer insulating films in which the dummy via 106 and the interconnect 105A connected to the dummy via 106 may be formed as a multilayer structure of three or more layers.
Moreover, the semiconductor device of the second example embodiment was described with respect to a method of forming the via 113, the dummy via 106, and the interconnects 105, 105A by a damascene method. However, the via 113, the dummy via 106, and the interconnects 105, 105A may be formed by a dual damascene method.
Moreover, in the first and second example embodiments, it is desirable that the dummy via 106 be formed so as to connect to an interconnect having the smallest interconnect width, such as the interconnect 105A, among the interconnects having a void 109 formed around the most part of their periphery, that is, among the interconnects which are very likely to peel off from the interlayer insulating film. This is because an interconnect having a smaller interconnect width is more likely to peel off from the interlayer insulating film. On the contrary, it is preferable to form the dummy via 106 under the interconnects which are very likely to peel off from the interlayer insulating film.
Note that, in the first and second example embodiments, it is desirable not to form the via 113, which is connected to the interconnect 105, in the interconnects 105, 105A which are in contact with the void 109. Forming the via in the interconnects 105, 105A which are in contact with the void 109 can cause the via hole and the void 109 to connect to each other due to misalignment which occurs when forming the via hole. However, the above structure can prevent the problem of the via hole and the void 109 connecting to each other (see Japanese Published Patent Application No. 2006-120988).
Moreover, in the first and second example embodiments, it is preferable to form a cap film on top of the interconnects 105, 105A so as to be in contact with the interconnects. Forming the cap film in this manner can prevent current leakage without significantly increasing the interconnect resistance. It is desirable that the cap film be made of Co, Mn, W, Ta, or Ru, or an alloy containing at least one kind of a metal selected from Co, Mn, W, Ta, and Ru, or an oxide of Co, Mn, W, Ta, or Ru, or copper-added silicon nitride (CuSiN), and that the cap film have a conductive property.
The semiconductor device and the manufacturing method thereof according to the present disclosure are capable of preventing an interconnect, which is in contact with a void, from peeling off from an insulating film, and also, are capable of providing a semiconductor device having high mechanical strength and low capacitance between interconnects. The semiconductor device and the manufacturing method thereof according to the present disclosure are especially useful for a semiconductor device having a multilayer interconnect structure and a manufacturing method thereof, and the like.
Number | Date | Country | Kind |
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2008-027726 | Feb 2008 | JP | national |
This is a continuation of Application PCT/JP2008/003783, filed on Dec. 16, 2008. This Non-provisional application claims priority under 35 U.S.C. 119(a) on Patent Application No. 2008-027726 filed in Japan on Feb. 7, 2008, the entire contents of which are hereby incorporated by reference.
Number | Date | Country | |
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Parent | PCT/JP2008/003783 | Dec 2008 | US |
Child | 12539852 | US |