Semiconductor Device and Method for Manufacturing the Same

Abstract

A semiconductor device and method for manufacturing the same are provided, capable of narrowing feature size by utilizing the property of oxidation of a material. In one method, a polysilicon layer can be patterned into a fine pattern up to a critical dimension using a photolithography process. Then the patterned polysilicon layer can be oxidized, thereby narrowing the gap between adjacent polysilicon patterns and narrowing the polysilicon patterns through the oxidation process. The narrowed polysilicon patterns and/or the narrowed gap between adjacent polysilicon patterns can be used to form vias or trenches in the substrate (or layer) below the polysilicon layer having a width narrower than the critical dimension.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 9 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment.

FIGS. 10 to 12 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment.

FIGS. 13 and 14 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to an embodiment.

DETAILED DESCRIPTION

Hereinafter, a semiconductor device and a method for manufacturing the same according to embodiments of the present invention will now be illustrated with reference to the accompanying drawings.

In the description of embodiments, it will be understood that when a layer (or film) is referred to as being ‘on’ another layer or substrate, it can be directly on the another layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being ‘under’ another layer, it can be directly under the another layer, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being ‘between’ two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

FIGS. 1 to 9 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to a first embodiment.

The first embodiment relates to a method for manufacturing a semiconductor device including a gate insulating layer with an ultrafine pattern of which the width is equal to or less than half a critical dimension which can be obtained using a particular optical system.

Of course, a metal line including a contact hole having the ultrafine width can be formed using technical features of this embodiment.

Referring to FIG. 1, a polysilicon layer 130 is formed on a substrate (or a base) 120. A photoresist layer 140 is formed on the polysilicon layer 130. According to various embodiments, the polysilicon layer 130 and photoresist layer 140 can be provided in a process to form, for example, semiconductor components or a lower metal line or the like on the substrate (or layer) 120.

Referring to FIG. 2, the photoresist layer 140 formed on the polysilicon layer 130 is patterned into a predetermined shape, thereby forming a photoresist pattern 145. The photoresist pattern can vary in shape according to desired patterns for a particular layer. A space between the photoresist patterns 145 can be the critical dimension that can be obtained by using a related art optical system.

Afterwards, referring to FIG. 3, the polysilicon layer 130 is etched to form first trenches using the photoresist pattern 145 as an etch mask. According to an embodiment, the substrate is not exposed during the etching of the polysilicon layer in order to provide a remaining polysilicon layer 130 between the photoresist patterns 145 that can be oxidized during a later performed oxidation process of the polysilicon layer 130.

Subsequently, referring to FIG. 4, the polysilicon layer 130 with the first trenches having the width of the spacing between photoresist patterns 145 formed therein is oxidized to form a second trench between oxide layers 150. The second trench is formed by the narrowing of the first trench caused by oxidation of the polysilicon layer. In one embodiment, the second trench can have a width equal to or less than half the critical dimension. Of the total thickness of the oxide layer 150 formed during the oxidation of the polysilicon layer 130, approximately 45% of the total thickness corresponds to the thickness of a portion of the oxide layer 150 grown inwardly based on a boundary between the polysilicon layer 130 and air, whereas approximately 55% of the total thickness corresponds to the thickness of another portion of the oxide layer 150 grown outwardly based on the boundary.

Therefore, the etched polysilicon layer 130 of FIG. 3 is oxidized as illustrated in FIG. 4, so that the portion of polysilicon layer 130, which is not oxidized, exists inside, and the oxide layer 150 (hereinafter, referred to as polysilicon oxide layer) is formed outside the polysilicon layer 130. The more the material, in this case polysilicon 130, is oxidized, the narrower the peaks of non-oxidized material. In one embodiment, the polysilicon layer 130 can be oxidized to ½ its original size. In a further embodiment, the polysilicon layer 130 can be oxidized to, for example, ¼ its original size.

Next, referring to FIG. 5, the polysilicon oxide layer 150 on the polysilicon layer 130 is planarized so as to expose the polysilicon layer 130. The planarization can be performed using a chemical mechanical polishing (CMP) process or the like.

Thereafter, referring to FIG. 6, the exposed polysilicon layer 130 is removed to expose the substrate 120. Then, the exposed substrate 120 is etched using the polysilicon oxide layer 150 as an etch mask to form a third trench having the width of the removed narrowed polysilicon layer 130.

In one embodiment, the etching of the exposed polysilicon layer 130 can be performed using a fluorinated ethylene propylene (FEP) deep etching process.

Afterwards, referring to FIG. 7, the polysilicon oxide layer 150 is removed from the substrate 120 having the third trench formed therein.

As a result, according to the first embodiment, it is possible to form a trench having a width that is equal to or less than half the critical dimension that can be realized by the related art photography process implementing a fine pattern.

Such an ultrafine trench formed by the first embodiment can be used, for example, in forming a gate insulating layer for a gate electrode or a metal line.

FIGS. 8 and 9 illustrate a case where the ultrafine trench shown in FIG. 7 is used for forming a gate insulating layer for a gate electrode.

Referring to FIG. 8, a gate insulating layer 160 can be formed on a bottom surface of the third trench. The gate insulating layer 160 can be thermally oxidized to form a gate oxide layer.

Next, a gate metal 170 can be formed on an entire surface of the substrate 120 so as to fill the third trench where the gate insulating layer 160 is formed. The gate metal 170 can be formed of polysilicon.

Thereafter, referring to FIG. 9, a photoresist pattern 180 for a gate can be formed on the gate metal 170, and the gate metal 170 is then etched using the photoresist pattern 180 as a mask to thereby form a gate 175 of which an upper portion is wider than a lower portion.

Accordingly, according to the first embodiment, it is possible to form a gate electrode having a gate insulating layer, where the linewidth is equal to or less than half the critical dimension that can be realized by the related art photography process implementing a fine pattern.

In a further embodiment, a silicide (not shown) can be formed on the gate 175. In this case, since the gate 175 is wider than the gate insulating layer 160, the resistance of silicide can be reduced.

In another embodiment, the ultrafine trench can be used as a contact hole (via hole) for a metal line.

As described above, a polysilicon pattern is formed to have a critical dimension that can be realized by the related art photolithography implementing a fine pattern, and the polysilicon pattern is then oxidized. Thereafter, an oxide mask having a linewidth narrower than the linewidth obtainable by the related art photolithography is formed, and can be used to form a deep hole or interconnection line trench. Consequently, it is possible to realize a double-layered hole of several nanometers or an interconnection line trench of several nanometers.

According to an embodiment, the reduction of critical dimension can greatly improve the integration degree of the semiconductor device.

FIGS. 10 to 12 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to a second embodiment.

The second embodiment may employ the technical features of the first embodiment.

However, the second embodiment is different from the first embodiment in that the substrate 120 is exposed when the polysilicon layer 130a is etched.

For instance, the polysilicon layer 130a can be etched so as to expose the substrate 120 using the photoresist pattern 145 as an etch mask, as illustrated in FIG. 10.

Thereafter, referring to FIG. 11, the polysilicon layer 130a is oxidized to form a polysilicon oxide 150a, thereby forming a second trench having a width that is equal to or less than half the critical dimension obtainable by the related art photolithography.

Afterwards, referring to FIG. 12, the substrate 120 exposed by the second trench is etched to form a third trench using the polysilicon oxide 150a as an etch mask. The third trench can be used as, for example, a trench for forming a gate electrode as described with reference to FIGS. 8 and 9.

FIGS. 13 and 14 are cross-sectional views illustrating a method for manufacturing a semiconductor device according to a third embodiment.

After removing the exposed polysilicon layer 130 to expose the substrate 120 as illustrated in FIG. 6, the method according to the third embodiment further includes over-etching the second trench of the polysilicon oxide 150 and the exposed substrate 120, thereby forming a plurality of trenches having different heights.

For instance, referring to FIG. 13, the second trench of the polysilicon oxide 150 and the exposed substrate 120 can be over-etched to form the plurality of trenches having different heights.

In the third embodiment, the plurality of trenches can include second spaces of which widths are equal to or less than half the critical dimension obtainable by the related art photolithography. Herein, the second spaces are different from first spaces in height.

For example, the second spaces can be formed lower than the first spaces, or the second spaces can be formed higher than the first spaces.

Thus, it is possible to form a semiconductor device having a stepped trench with a width that is equal to or less than half the critical dimension obtainable by the related art optical system.

The stepped trench according to the third embodiment can be used, for example, for a contact hole (via hole) of a metal line and a gate insulating layer for forming a gate electrode.

Although the oxidized material is described above in the embodiments as polysilicon, the embodiments are not limited thereto. Any suitable oxidizing material can be used. For example, Titanium (Ti)—forming TiO₂—instead of polysilicon can be used. In other embodiments, if the base being etched to form the narrow trenches or holes is a metal layer, a mask layer of a material that oxidizes can be used incorporating similar techniques to forming the trenches or holes in a substrate as described above.

The reduction of critical dimension can greatly improve the integration degree of the semiconductor device.

Any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skill in the art to effect such feature, structure, or characteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.

Claims

1. A semiconductor device, comprising: a first trench formed on a substrate, the first trench having a width equal to or less than half a predetermined critical dimension; anda second trench formed on the substrate, the second trench having a width equal to or less than half the predetermined critical dimension,wherein the first trench and the second trench are formed to different depths on the substrate.

2. The semiconductor device according to claim 1, wherein the second trench is spaced apart from the first trench by a distance equal to or less than half the predetermined critical dimension.

3. The semiconductor device according to claim 1, wherein the second trench is formed deeper than the first trench.

4. The semiconductor device according to claim 1, wherein the second trench is formed shallower than the first space.

5. The semiconductor device according to claim 1, wherein the first and second trenches are contact holes.

6. The semiconductor device according to claim 1, wherein the first and second trenches are interconnection trenches.

7. The semiconductor device according to claim 1, further comprising a gate dielectric layer formed in the first trench, and a gate electrode formed on the gate dielectric layer.

8. The semiconductor device according to claim 1, wherein the first trench and/or second trench has a width of about ¼ the predetermined critical dimension.

9. A method for manufacturing a semiconductor device, the method comprising: forming a layer of a material capable of oxidizing on a substrate;etching the layer to form a first trench having a critical dimension, wherein a portion of the layer remains below the first trench; andoxidizing the layer having the first trench formed therein, thereby narrowing the first trench to form a second trench having a width equal to or less than half the critical dimension.

10. The method according to claim 9, further comprising: planarizing the oxidized layer so as to expose remaining non-oxidized layer material;removing the exposed remaining non-oxidized layer material to expose the substrate;etching the exposed substrate to form a third trench having a width equal to or less than half the critical dimension; andremoving the oxidized layer from the substrate having the third trench formed therein.

11. The method according to claim 10, further comprising, after removing the exposed remaining non-oxidized layer material to expose the substrate, over-etching the second trench and the exposed substrate to form a plurality of trenches having different depths.

12. The method according to claim 10, further comprising, after removing the oxidized layer; forming a gate insulating layer on a bottom surface of the third trench; andforming a gate electrode on the gate insulating layer.

13. The method according to claim 10, further comprising, after removing the oxidized layer: depositing a metal on an entire surface of the substrate so as to fill the third trench; andremoving the metal to form a metal line by planarization and/or etching the metal.

14. The method according to claim 10, wherein the layer material comprises polysilicon.

15. The method according to claim 14, wherein removing the exposed remaining non-oxidized layer material comprises performing a fluorinated ethylene propylene (FEP) deep etching on the exposed polysilicon layer.

16. A method for manufacturing a semiconductor device, the method comprising: forming a layer of a material capable of oxidizing on a substrate;etching the layer to form a first trench having a critical dimension, wherein the first trench completely etches through the layer to expose the substrate;oxidizing the layer having the first trench formed therein, thereby narrowing the first trench to form a second trench having a width which is equal to or less than half the critical dimension; andetching the exposed substrate using the oxidized layer having the second trench as an etch mask to form a third trench having a width equal to or less than half the critical dimension.

17. The method according to claim 16, further comprising: planarizing the oxidized layer so as to expose remaining non-oxidized layer material;removing the exposed remaining non-oxidized layer material to expose the substrate;etching the exposed substrate using the oxidized layer having the removed remaining non-oxidized layer material to form a fourth trench having a width equal to or less than half the critical dimension; andremoving the oxidized layer from the substrate having the third trench and fourth trench formed therein,wherein the third trench and the fourth trench are formed to different depths on the substrate.

18. The method according to claim 17, wherein the layer material comprises polysilicon, wherein the removing of the exposed remaining non-oxidized layer material comprises performing an FEP deep etching on the exposed polysilicon layer.

19. The method according to claim 16, further comprising: forming a gate insulating layer on a bottom surface of the third trench; andforming a gate electrode on the gate insulating material.

20. The method according to claim 16, wherein the layer material comprises polysilicon.