Semiconductor device and method for manufacturing the semiconductor device

Abstract

A method is used for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed. The method includes the following steps. A semiconductor wafer is placed on the suction surface of a suction stage, the suction surface having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer. The semiconductor wafer is held on the suction surface of the suction stage by suction. A back surface of the semiconductor wafer is ground. The back surface of the semiconductor wafer is ground such that a surface roughness of the ground back surface is not greater than 5 nm. The encapsulation layer has a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limiting the present invention, and wherein:

FIG. 1 is a fragmentary cross-sectional side view of a semiconductor wafer of an embodiment according to the present invention, illustrating a method for manufacturing the semiconductor wafer;

FIG. 2 illustrates the method for manufacturing the semiconductor wafer of the embodiment;

FIG. 3 is a fragmentary cross-sectional side view illustrating a back surface grinding apparatus used at Process #8;

FIG. 4 illustrates the relation between the suction surface and the warpage of a semiconductor wafer;

FIG. 5 illustrates the relationship between the surface roughness and the warpage of the semiconductor wafer;

FIG. 6 illustrates the relationship between the warpage of the semiconductor wafer and the flexural modulus of a resin material for an encapsulation layer; and

FIG. 7 illustrates the relationship between the flexural modulus of the resin material and the flexural strength of a semiconductor device.

Claims

1. A method for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed, the method comprising: placing a disc-shaped semiconductor wafer on a suction surface of a suction stage, the sucking area having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer;holding the semiconductor wafer on the suction surface of the suction stage by suction; andgrinding a back surface of the semiconductor wafer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein grinding is performed such that a surface roughness of the back surface is not greater than 5 nm.

3. The method for manufacturing a semiconductor device according to claim 1, further comprising forming the encapsulation layer having a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa at room temperature.