SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A method of manufacturing a semiconductor device includes: forming a first photosensitive material pattern having an opening hole on a work target layer formed on an active surface of a substrate; performing a first etching by performing an etching treatment to the work target layer using the first photosensitive materialpattern as a mask, and forming one of a concave and a groove in a tapered shape with a wide opening to the work target layer while enlarging the opening hole, by performing the etching treatment so as to enlarge the opening hole; and filling a metal film into one of the concave and the groove.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.

FIG. 1 is a diagram schematically showing a configuration of a holographic exposure device according to an embodiment.

FIG. 2 is a diagram schematically showing a configuration of a distance measuring optical system according to the holographic exposure device.

FIG. 3 is a sectional view schematically showing a method for manufacturing a semiconductor device.

FIG. 4 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 5 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 6 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 7 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 8 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 9 is a sectional view schematically showing the method for manufacturing the semiconductor device.

FIG. 10 is a sectional view schematically showing the method for manufacturing the semiconductor device.

Claims

1. A method of manufacturing a semiconductor device, comprising: forming a first photosensitive material film having a first opening hole, the first photosensitive material film being positioned over a first work target layer the first work target layer being positioned over a substrate;forming a second work target layer having a first concave portion by performing a first etching treatment to the first work target layer using the first photosensitive material as a mask, the first concave portion being overlapped with the first opening hole;forming a second photosensitive material having a second opening hole by enlarging the first opening hole of the first photosensitive material; andforming a third work target layer having a second concave portion by performing a second etching treatment to the second work target layer using the second photosensitive material as a mask, the second concave portion being overlapped with the second opening hole, the second concave portion having a first part and a second part, the first part being interposed between the second part and the substrate, the second part being wider than the first part.

2. The method of manufacturing the semiconductor device according to claim 1, the first opening hole having a tapered shape after the process of forming the first photosensitive material, the first concave portion having a tapered shape after the process of forming the second work target layer.

3. The method of manufacturing the semiconductor device according to claim 1, the second opening hole having a tapered shape after the process of forming the second photosensitive material, the second concave portion having a tapered shape after the process of forming the third work target layer.

4. The method of manufacturing the semiconductor device according to claim 1, the first opening hole being formed by using a holographic exposure device in the process of forming the first photosensitive material film.

5. The method of manufacturing the semiconductor device according to claim 1, the first opening hole being formed by using a holographic exposure device in the process of forming the first photosensitive material film, the first photosensitive material film including a low transmittance material.

6. The method of manufacturing the semiconductor device according to claim 1, the first, opening hole being formed by exposing the first photosensitive material film, the first opening hole having a tapered shape with the exposed side being wide.

7. The method of manufacturing the semiconductor device according to claim 1, the second concave portion being one of a contact hole and a via-hole.

8. The method of manufacturing the semiconductor device according to claim 1, further comprising: forming a metal film at least on a surface of the first part and a surface of the second part.

9. A method of manufacturing a semiconductor device, comprising: forming a first photosensitive material film having a first opening hole, the first photosensitive material film being positioned over a first work target layer, the first work target layer being positioned over a substrate;forming a second work target layer having a first groove portion by performing a first etching treatment to the first work target layer using the first photosensitive material as a mask, the first groove portion being overlapped with the first opening hole;forming a second photosensitive material having a second opening hole by enlarging the first opening hole of the first photosensitive material; andforming a third work target layer having a second groove portion by performing a second etching treatment to the second work target layer using the second photosensitive material as a mask, the second groove portion being overlapped with the second opening hole, the second groove portion having a first part and a second part, the first part being interposed between the second part and the substrate, the second part being wider than the first part.

10. The method of manufacturing the semiconductor device according to claim 9, further comprising: forming a metal film at least on a surface of the first part and a surface of the second part.

11. A semiconductor device, comprising: a substrate;a metal film; anda work target layer having a concave portion, the concave portion having a first part and a second part, the first part being interposed between the second part and the substrate, the second part being wider than the first part, the metal film being formed at least on a surface of the first part and a surface of the second part.