Claims
- 1. A semiconductor device, comprising:
a substrate having lithium niobate tantalate (LiNbzTa1−zO3), where 0≦z≦1; and a group III nitride compound semiconductor layer deposited upon the substrate.
- 2. The semiconductor device of claim 1, wherein the group III nitride compound is AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1.
- 3. The semiconductor device of claim 2 further comprising a buffer layer of AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, located between the substrate and the first layer.
- 4. The semiconductor device of claim 3, wherein the buffer layer of AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, consists of AlN (x=1, y=0).
- 5. The semiconductor device of claim 1, wherein the substrate has at least a lithium niobate (LiNbO3) single crystal; the group III nitride compound is AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1; and whereby the LiNbO3 crystal is substantially lattice-matched to the group III nitride compound to form the semiconductor device.
- 6. The semiconductor device of claim 1, wherein the substrate has at least a lithium tantalate (LiTaO3) single crystal; the group III nitride compound is AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1; and whereby the LiTaO3 crystal is substantially lattice-matched to the group III nitride compound to form a semiconductor device.
- 7. A semiconductor device, comprising:
a substrate having silicon carbide (SiC); and a first layer of lithium niobate tantalate (LiNbxTa1−xO3) where 0≦z≦1, formed on the substrate.
- 8. The semiconductor device of claim 7, wherein the first layer is lithium niobate.
- 9. The semiconductor device of claim 8 further comprising a buffer layer of AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, located between the substrate and the first layer.
- 10. A method for producing a semiconductor device, the method comprising:
providing a SiC substrate containing at least a first step in a generally horizontal first surface; and depositing a layer of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1, upon the horizontal first surface, using the step edge to orient the lattice structure of the lithium niobate tantalate (LiNbzTa1−zO3) to be substantially matched to the lattice structure of the SiC substrate.
- 11. A method for producing a semiconductor device, the method comprising:
providing a substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1; and depositing a first layer of AlxInyGa1−(x+y)N where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, upon the substrate at a temperature in the range of about 900° C. to about 1100° C.
- 12. The method of claim 11, wherein the first layer of AlxInyGa1−(x+y)N where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, consists of AlN (x=1, y=0).
- 13. The method of claim 12 further comprising the step of depositing a second layer of AlxInyGa1−(x+y)N where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, upon the layer of AlN.
- 14. A method for producing a semiconductor device, the method comprising:
providing a substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1; depositing a layer of aluminum upon the substrate at a temperature in the range of about 100° C. to 500° C.; and thereon providing nitrogen to interact with the layer of aluminum to create a layer of AlN upon the substrate.
- 15. The method of claim 14 further comprising the step of depositing a layer of AlxInyGa1−(x+y)N where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1, upon the layer of AlN.
- 16. A method for forming a poled semiconductor device, the method comprising:
providing a lithium niobate (LiNbO3) substrate that is uniformly poled in a first direction; providing a electric field that traverses a part of the substrate, to create a first area of the substrate that is poled in a second direction; removing the electric field; and depositing a group III nitride compound as on the substrate including the first area of the substrate.
- 17. The method of claim 16, wherein depositing the group III nitride compound is carried out at an elevated temperature of up to approximately 1100° C.
- 18. A periodically-poled semiconductor device comprising:
a periodically-poled substrate of lithium niobate tantalate (LiNbzTa1−zO3) where 0≦z≦1; and a group III nitride compound semiconductor layer formed on the substrate.
- 19. The periodically-poled semiconductor device of claim 18, wherein the group III nitride compound is AlxInyGa1−(x+y)N, where 0≦x≦1 and 0≦y≦1 and 0≦(x+y)≦1.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Patent Application serial No. 60/357,296 filed Feb. 15, 2002, which is incorporated herein by reference in its entirety.
Provisional Applications (1)
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Number |
Date |
Country |
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60357296 |
Feb 2002 |
US |